RF PhotoMOS (AQV22
❍
N)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator “X” and “Z” are omitted from the seal.
RATING
Lower output capacitance
and on resistance.
High speed switching.
(Turn on time: 0.2ms,
Turn off time: 0.08ms).
RF PhotoMOS
(AQV22
❍
N)
Type
Output rating*
Part No.
Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage
Load
current Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC type
200 V 70 mA AQV227N AQV227NA AQV227NAX AQV227NAZ 1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
400 V 50 mA AQV224N AQV224NA AQV224NAX AQV224NAZ
mm inch
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.6±0.2
.142±.008
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.9±0.2
.154±.008
1
2
3
6
5
4
FEATURES
1. PhotoMOS relay with high response
speed, low leakage current and low On
resistance
2. Low capacitance between output
terminals ensures high response
speed:
The capacitance between output
terminals is small, typically 10 pF. This
enables for a fast operation speed of 200
µs.
3. High sensitivity and low On
resistance
Maximum 0.1 A of load current can be
controlled with input current of 5 mA. The
On resistance is less than our
conventional models. With no metallic
contacts, the PhotoMOS relay has stable
switching characteristics.
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, whereas the
PhotoMOS relay has only 30 pA even
with the rated load voltage of 200 V
(AQV227N).
5. Controls low-level analog signals
PhotoMOS relay features extremely low
closed-circuit offset voltages to enable
control of small analog signals without
distortion.
6. Low terminals electromotive force
(approx. 1 µV)
TYPICAL APPLICATIONS
• Measuring devices
• Scanner, IC checker, Board tester
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item Symbol
Type of
connec-
tion
AQV227N(A) AQV224N(A) Remarks
Input
LED forward current IF50 mA
LED reverse voltage VR5 V
Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Output
Load voltage (peak AC) VL200 V 400 V
Continuous load current IL
A 0.07 A 0.05 A A connection: Peak AC, DC
B, C connection: DC
B 0.08 A 0.06 A
C 0.10 A 0.08 A
Peak load current Ipeak 0.21 A 0.15 A A connection: 100 ms (1 shot),
VL = DC
Power dissipation Pout 360 mW
Total power dissipation PT410 mW
I/O isolation voltage Viso 1,500 V AC
Temperature
limits
Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low
temperatures
Storage Tstg –40°C to +100°C –40°F to +212°F
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
RF PhotoMOS (AQV22
❍
N)
2. Electrical characteristics (Ambient temperature: 25
°
C 77
°
F)
Note: Recommendable LED forward current I
F
= 5mA.
*Turn on/Turn off time
■
■
■
REFERENCE DATA
Item Symbol
Type of
connec-
tion
AQV227N(A) AQV224N(A) Remarks
Input
LED operate current Typical I
Fon
—0.90 mA I
L
= Max.
Maximum 3.0 mA
LED turn off current Minimum I
Foff
—0.4 mA I
L
= Max.
Typical 0.85 mA
LED dropout voltage Typical V
F
—1.25 V (1.14 V at I
F
= 5 mA) I
F
= 50 mA
Maximum 1.5 V
Output
On resistance
Typical R
on
A30
Ω
70
Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 50
Ω
100
Ω
Typical R
on
B16
Ω
55
Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 25
Ω
70
Ω
Typical R
on
C8
Ω
28
Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 12.5
Ω
35
Ω
Output capacitance Typical C
out
—10 pF I
F
= 0
V
B
= 0
f = 1 MHz
Maximum 15 pF
Off state leakage current Typical I
Leak
—30 pA 90 pA I
F
= 0
V
L
= Max.
Maximum 10 nA
Transfer
characteristics
Switching
speed
Tu rn on time* Typical T
on
—0.20 ms I
F
= 5 mA
I
L
= Max.
Maximum 0.5 ms
Tu rn off time* Typical T
off
—0.08 ms I
F
= 5 mA
I
L
= Max.
Maximum 0.2 ms
I/O capacitance Typical C
iso
—0.8 pF f = 1 MHz
V
B
= 0
Maximum 1.5 pF
Initial I/O isolation
resistance Minimum R
iso
— 1,000 M
Ω
500 V DC
Ton
Input
Output 10%
90%
Toff
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Turn on time vs. ambient temperature
characteristics
Sample: AQV227N, AQV224N;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
150
100
50
00–40 20 40 60
80 85
100–20
AQV227N
AQV224N
Ambient temperature, °C
Load current, mA
120
100
80
60
20
40
00–40 20 40 60
80 85
–20
AQV224N
AQV227N
Ambient temperature, °C
On resistance, Ω
1.0
0.8
0.6
0.4
0.2
00–40 20 40 60 8085
–20
AQV227N
AQV224N
Ambient temperature, °C
Turn on time, ms
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
RF PhotoMOS (AQV22
❍
N)
4. Turn off time vs. ambient temperature
characteristics
Sample: AQV227N, AQV224N;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Sample: AQV227N, AQV224N;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED turn off current vs. ambient temperature
characteristics
Sample: AQV227N, AQV224N;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0.5
0.4
0.3
0.2
0.1
00–40 20 40 60
80 85
–20
AQV227N
AQV224N
Ambient temperature, °C
Turn off time, ms
5
4
3
2
1
00–40 20 40 60
80 85
–20
AQV227N
AQV224N
Ambient temperature, °C
LED operate current, mA
5
4
3
2
1
00–40 20 40 60
80 85
–20
AQV227N
AQV224N
Ambient temperature, °C
LED turn off current, mA
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types;
LED current: 5 to 50 mA
8. Current vs. voltage characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
9. Off state leakage current
Sample: AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
1.5
1.4
1.3
1.2
1.1
1.0
00–40 20 40 60
80 85
–20
50mA
30mA
20mA
10mA
5mA
LED dropout voltage, V
Ambient temperature, °C
–4 –3 –2 –1
–150
–100
–50
150
100
50
2
AQV227N
AQV224N
Current, mA
Voltage, V
134
10–6
10–9
10–12
0200 300 400100
AQV227N
AQV224N
Load voltage, V
Off state leakage current, A
10. Turn on time vs. LED forward current
characteristics
Sample: AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
11. Turn off time vs. LED forward current
characteristics
Sample: AQV227N, AQV224N;
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC);
Continuous load current: Max. (DC);
Ambient temperature: 25°C 77°F
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz, 30 mVrms;
Ambient temperature: 25°C 77°F
1.4
1.2
1.0
0.8
0.6
0.4
0.2
010 20 30 40 50 600
AQV224N·AQV227N
LED forward current, mA
Turn on time, ms
0.22
0.18
0.14
0.10
0.06
010 20 30 40 50 600
AQV224N
AQV227N
LED forward current, mA
Turn on time, ms
12
10
8
6
4
2
00204060 80100
AQV224N
AQV227N
Applied voltage, V
Output capacitance, pF
13. Isolation characteristics
(50 Ω impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
14. Insertion loss characteristics
(50 Ω impedance)
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
100
80
60
40
20
0104105106107
AQV224N
AQV227N
Frequency, HZ
Isolation, dB
6
5
4
3
2
1
0104105106107
AQV224N
AQV227N
Frequency, HZ
Insertion loss, dB
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
