HIGH-POWER
INFRARED PULSED LASER DIODE
L7060-02
Unit
W
nm
nm
V
ns
degree
degree
A
Min.
30
-
-
-
-
-
-
-
Value
35
2
40
100
0.075
-30 to +85
-40 to +125
Parameter
Pulsed Radiant Power (Peak Power)
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Condition
IFP=30 A
FWHM
IFP=30 A
FWHM
IFP=30 A
Typ.
-
870
4
7
-
9
30
1
Max.
-
-
-
-
2
-
-
-
Parameter
Pulsed Foward Current
Re verse Voltage
Pulsed Radiant Output Power
(Peak Power)
Pulse Duration (FWHM)
Duty Ratio
Operating Temperature
Storage Temperature
Figure 1: Dimensional Outline (Unit: mm)
2.54
0.45
1.2 Max.
3.0
0.2
4.6
0.2
5.4
0.5 Max. 2.6
0.3
20.0
1.0 3.8
0.2
LD Chip
Glass Window
Side View
Anode
45
C
(Common to Case)
Bottom View
Cathode
+0.05
-0.1
(Pin Connection)
Anode
Cathode
FEATURES
High output power (
ep 30 W)
High speed rise time (tr 2 ns Typ.)
APPLICATIONS
Laser rader
Range finder
Excitation light source
Optical trigger
Security barrier
ABSOLUTE MAXIMUM RATINGS
Symbol
IFP
Vr
ep
tw
DR
Top(c)
Tstg
Unit
A
V
W
ns
%
C
C
ELECTRICAL AND OPTICAL CHARACTERISTICS (Top(c)=25
C)
Symbol
ep
p
w
Vf
tr
Ith
Note: General operating condition
ep 30 W, tw 50 ns, Repetition frequency 8 kHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
2009 Hamamatsu Photonics K.K.
PRELIMINARY DATA
HIGH-POWER INFRARED PULSED LASER DIODE L7060-02
Handling Precautions for L7060-02
1. Precautions for handling
The LD (laser diode) may be damaged or its performance may deteriorate
due to such factors as electrostatic discharge from the human body, surge
voltages from measurement equipment, leakage voltages from soldering
irons, and packing materials. As a countermeasure against static electricity,
the device, operator, work place and measuring jigs must all be set at the
same electric potential. In using LD, observe the following precautions:
·
To protect the device from static electricity charges which accumulate on
the operator or the operator's clothes, use a wrist strap etc. to ground the
operator's body via a high impedance resistor (1 M
W
).
·
A semiconductive sheet should be laid on both the work table and the
floor in the work area. When soldering, use an electrically grounded solder-
ing iron with an isolation resistance of more than 10 M
W
.
·
For containers for transportation and packing, use of antistatic material
(material that minimizes the generation of static change when rubbed
against or separated from itself or other similar materials).
2. Precautions for mounting
(1)Lead forming
To form the leads, hold the base of the leads securely and bend them so
that no force is applied to the package. Lead forming should be done before
soldering.
(2)Cutting off the leads
If leads are out when still at a high temperature, this may cause an electri-
cal discontinuity. Always cut off the leads when they are at room tempera-
ture. Never cut off the leads immediately after they are soldered.
(3)Soldering
Using a low-temperature melting solder (below 200
°
C), solder the leads
at the temperature and dwell time specified as follows.
Maximum Soldering Temperature: 230
°
C
Maximum Soldering Time: 5 seconds (1 second for devices having
a lead length less than 2 mm)
If these conditions cannot be met, it is recommended that some form of
heat sink be used at the base of the lead so that the solder heat is not
conducted to the package. Also be careful not to apply excessive force to
the leads during soldering.
Soldering at excessive temperatures and dwell times may cause the
roots of the leads to crack, resulting in performance deterioration. This
sometimes leads to wiring breakage. If the leads are soldered while exter-
nal force is applied to the device, the residual force tends to degrade de-
vice performance. Care should also be taken not to apply force to the
leads during soldering.
In addition, when soldering an LD. use a soldering iron with its metallic
parts grounded to prevent damage to the device from static discharge.
Do not use any flux which is highly acidic. alkaline or inorganic because it
may cause the component leads to erode.
Use a rosin flux.
3.Protection against laser beams
The LD is classified into class 3B according to the laser product stan-
dards of the lEC825-1 (Radiation safety of laser products Part1: Equip-
ment classification, requirements and user's guide). The operator must
avoid eye or skin exposure to the laser beam. When viewing the laser
beam, be sure to wear safety goggles that block infrared radiation.
PULSED FORWARD CURRENT IFP (A)
RELATIVE RADIANT POWER (%)
WAVELENGTH (nm)
RELATIVE RADIANT POWER (%)
ANGLE (degree)
Top View
Top View
40
30
20
10
00102030
100
80
60
40
20
0870 890 910830 850
80
60
100
40
20
03040 20 10 0 10 20 30 40
Vertical Direction
Parallel
Direction
Top View Top View
Figure 2: Radiant Power vs.
Pulsed Forward Current (Typ.)
( Top(c) = 25
°
C )
PULSED RADIANT POWER
F
ep (W)
( Top(c) = 25
°
C )
Figure 3: Emission Spectrum (Typ.)
Figure 4: Directivity (Typ.)
(IFP=30 A, Top(c) = 25
°
C)
Cat. No. LLD1003E05
DEC. 2009 HPK
http://jp.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept.
1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, Shizuoka, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: laser-g@lsr.hpk.co.jp
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de
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Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it
