DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5
May 2015
DF005S - DF10S
Bridge Rectifiers
Features
Maximum Surge Rating: IFSM = 50 A
I2t = 10 A2Sec
Optimized VF: Typical 0.94 V at 1.5 A, 25°C
Glass Passivated Junctions
Lead Free Compliant to EU RoHS 2002/95/EU Directives
Green Molding Compound: IEC61249
Qualified with IR Reflow and Wave Soldering
UL Certified, UL #E258596
Ordering Information
Part Number Top Mark Package Packing Method
DF005S DF005S SDIP 4L Tape and Reel
DF01S DF01S SDIP 4L Tape and Reel
DF02S DF02S SDIP 4L Tape and Reel
DF04S DF04S SDIP 4L Tape and Reel
DF06S DF06S SDIP 4L Tape and Reel
DF08S DF08S SDIP 4L Tape and Reel
DF10S DF10S SDIP 4L Tape and Reel
Description
With the ever-pressing need to improve power supply
efficiency, improve surge rating, improve reliability, and
reduce size, the DFxS family sets a standard in perfor-
mance.
The design offers an surge rating of 50 A. This is impor-
tant when improving reliability and increasing efficiency.
High efficiency designs strive to reduce circuit resis-
tance, which, unfortunately can result in increased
inrush surge. As such high surge current ratings can be
required to maintain or improve reliability.
The design also offers better efficiency by achieving a
1.5 A VF of 1.1 V maximum at 25°C. This lower VF also
supports cooler and more efficient operation.
Finally, the DFxS achieves all this in a SDIP surface
mount form factor, reducing board space and volumetric
requirements vs. competitive devices.
+
-
~
~
IN
OUT
SDIP
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating cond itions and stressing the parts to these levels is n ot re co mmended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
1. Device mounted on PCB with 0.5 inch × 0.5 inc h (13 mm × 13 mm).
2. The ther mal resistances (RθJA & ψJL) are characteri ze d wi th the de vice mounted on t he following FR4 pr int ed ci rcu it
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
Symbol Parameter Value Unit
DF005S DF01S DF02S DF04S DF06S DF08S DF10S
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
VDC DC Reverse Voltage at Rated IR50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward Current
at TA = 40°C1.5 A
IFSM
Non-Repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine Wave 50 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
Symbol Parameter Value Unit
PDPower Dissipation 3.1 W
RθJA Thermal Resistance,
Junction-to-Ambient
Single-Die Measurement(1)
(Maximum Land Pattern: 13 x 13 mm) 62
°C/W
Multi-Di e Measurement(2)
(Maximum Land Pattern: 13 x 13 mm) 50
Multi-Di e Measurement(2)
(Minimum Land Pattern: 1.3 x 1.5 mm) 105
ψJL Thermal Characterization
Parameter, Junction to Lead Single-Die Measurement(2)
(Maximum and Minimum Land Pattern) 27 °C/W
Figure 1. Maximum Pads of 2 oz Copper Figure 2. Minimum Pads of 2 oz Copper
F
F
S
S
F
F
S
S
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage, per Element IF = 1.5 A 1.1 V
IRReverse Current, per Element at Rated VRTA = 25°C5.0
μA
TA = 12 5°C500
I2t Rating for Fusing (t < 8.35 ms) 10 A2s
CJTypical Capacitance, per Leg VR = 4.0 V,
f = 1.0 MHz 25 pF
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 4
Typical Performance Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Forward Current Derating Curve
Figure 5. Forward Volt a ge Charac teris tics Figure 6. Reverse Current vs. Reverse Voltage
12 51020 50100
0
10
20
30
40
50
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
20 40 60 80 100 120 140 160
0
0.5
1
1.5
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
Based on RθJA, per Leg
0.01
0.1
1
10
0.20.30.40.50.60.70.80.91.01.11.2
TJ= -55 oC
TJ=125 oC
TJ=150 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
200 300 400 500 600 700 800 900 1000
1E-3
0.01
0.1
1
10
100
TJ=-55 oC
TJ=150 oC
TJ=25 oC
Reverse Current, IR[μA]
Reverse Voltage, VR[V]
TJ=125 oC
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 5
Physical Dimensions
Figure 7. 4-LEAD, SDIP, 6.5 MM WIDE
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