AG303-63 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features Product Description Functional Diagram x DC - 6000 MHz x +14 dBm P1dB at 900 MHz x +26 dBm OIP3 at 900 MHz x 20.5 dB Gain at 900 MHz x Single Voltage Supply x Green SOT-363 SMT Pkg. x Internally matched to 50 : The AG303-63 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG303-63 typically provides 20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85q C and is housed in a leadfree/green/RoHS-compliant SOT-363 industry standard SMT package. Applications The AG303-63 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT technology process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. x Mobile Infrastructure x CATV / DBS x W-LAN / ISM x RFID x Defense / Homeland Security x Fixed Wireless 1 6 RF OUT GND 2 5 GND RF IN 3 4 GND Function Input Output/Bias Ground Pin No. 3 6 1, 2, 4, 5 The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG303-63 will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless. Specifications (1) Parameter GND Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA DC Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output IP3 (2) Output IP2 Output P1dB Noise Figure Test Frequency Gain Output IP3 (2) Output P1dB Device Voltage Device Current Typ 900 20.5 21 24 +25.8 +34 +14.0 3.2 1900 18.3 +25.3 +12.6 4.23 35 17.3 Max Parameter 6000 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB Typical 500 21.1 -20 -25 +14.0 +26.1 3.1 900 20.5 -21 -24 +14.0 +25.8 3.2 1900 18.3 -20 -19 +12.6 +25.3 3.4 2140 17.7 -20 -18 +12.2 +24.9 3.4 19.3 1. Test conditions:. T = 25 C, Supply Voltage = +5 V, Rbias = 22.1 , 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Ordering Information Rating Part No. -40 to +85 qC -55 to +125 qC +4.5 V +10 dBm +250 qC * Operation of this device above any of these parameters may cause permanent damage. Description AG303-63* InGaP HBT Gain Block AG303-63G InGaP HBT Gain Block AG303-63PCB 700 - 2400 MHz Fully Assembled Eval. Board (lead-tin SOT-363 Pkg) (lead-free/green/RoHS-compliant SOT-363 Pkg) This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 1 of 6 June 2005 AG303-63 The Communications Edge TM Product Information InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, Rbias = 22.1 :, Icc = 35 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 21.4 -23 -20 +14.0 +26.3 3.1 500 21.1 -20 -25 +14.0 +26.1 3.1 900 20.5 -21 -24 +14.0 +25.8 3.2 1900 18.3 -20 -19 +12.6 +25.3 3.4 2140 17.7 -20 -18 +12.2 +24.9 3.4 2400 17.1 -20 17 +12.1 +24.2 3.5 3500 15.1 -21 -16 +9.8 5800 11.4 -20 -11 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. 18 16 14 0 1 30 20 -30 0 4 1 20 15 4 5 1 1.5 2 30 25 +25C 200 1 +85C 18 Gain (dB) 15 10 5 0.5 1 1.5 2 2.5 600 800 0 1000 0.5 3 Frequency (GHz) 3.5 4 1 20 18 16 16 16 12 14 8 4 Output Power -20 -16 0 -12 -8 -4 Input Power (dBm) 1.5 +85 C 2 2.5 3 Output Power / Gain vs. Input Power Gain 10 +25 C Frequency (GHz) 12 +85 C 0 0 400 frequency = 900 MHz 20 +25 C -40 C Output Power / Gain vs. Input Power P1dB vs. Frequency -40 C 2 Frequency (MHz) Frequency (GHz) 20 3 0 0 3 4.5 4 -40C 2.5 4.0 Noise Figure vs. Frequency 5 Output Power (dBm) 0.5 3.5 Device Voltage (V) 20 0 0 3.0 6 35 +85 C 10 P1dB (dBm) 3 NF (dB) OIP2 (dBm) 25 +25 C 2 Output IP2 vs. Frequency 40 -40 C 10 S22 Frequency (GHz) Output IP3 vs. Frequency 30 OIP3 (dBm) -20 -40 3 Optimal operating point 40 S11 +85 C 2 Frequency (GHz) 50 -10 0 Gain (dB) 12 +25 C I-V Curve 60 frequency = 2000 MHz 12 Gain 14 8 12 4 10 0 Output Power 8 4 16 -20 -16 Output Power (dBm) S11, S22 (dB) Gain (dB) 20 -40 C Return Loss 0 Device Current (mA) Gain vs. Frequency 22 -4 -12 -8 -4 Input Power (dBm) 0 4 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 2 of 6 February 2005 AG303-63 The Communications Edge TM Product Information InGaP HBT Gain Block Typical Device RF Performance (cont'd) Supply Bias = +6 V, Rbias = 51 :, Icc = 35 mA Gain vs. Frequency OIP3 (dBm) Gain (dB) 20 18 16 14 -40 C 12 0 +25 C 1 25 20 15 +25 C 30 25 -40c 0.5 1 1.5 2 2.5 0 3 200 +85c P1dB vs. Frequency 400 600 800 1000 Frequency (MHz) Frequency (GHz) 20 +25c 20 0 4 35 +85 C 10 3 Output IP2 vs. Frequency 40 -40 C +85 C 2 Frequency (GHz) Noise Figure vs. Frequency 5 4 15 NF (dB) P1dB (dBm) Output IP3 vs. Frequency 30 OIP2 (dBm) 22 10 5 -40 C +25 C 3 2 1 +85 C -40 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 +25 C 1 Frequency (GHz) +85 C 1.5 2 2.5 3 Frequency (GHz) Typical Device RF Performance Supply Bias = +8 V, Rbias = 108 :, Icc = 35 mA Gain vs. Frequency OIP3 (dBm) Gain (dB) 20 18 16 14 -40 C 12 0 +25 C 1 15 3 30 25 -40c +25c +85c 20 0 4 35 +85 C 10 0.5 1 1.5 2 2.5 3 0 200 Frequency (GHz) P1dB vs. Frequency 20 400 600 800 1000 Frequency (MHz) Noise Figure vs. Frequency 5 4 15 NF (dB) P1dB (dBm) 20 +25 C Output IP2 vs. Frequency 40 25 -40 C +85 C 2 Frequency (GHz) Output IP3 vs. Frequency 30 OIP2 (dBm) 22 10 5 -40 C +25 C 3 2 1 +85 C -40 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 Frequency (GHz) 0.5 +25 C 1 1.5 +85 C 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 3 of 6 February 2005 AG303-63 The Communications Edge TM Product Information InGaP HBT Gain Block Application Circuit Vcc Icc = 35 mA R1 Bias Resistor C4 Bypass Capacitor C3 0.018 F L1 RF Choke RF IN RF OUT AG303-63 C2 Blocking Capacitor C1 Blocking Capacitor Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 F 1000 pF Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF 2500 18 nH 56 pF Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 22.1 ohms 0603 6V 51 ohms 0805 7V 80 ohms 1206 8V 108 ohms 1210 9V 137 ohms 1210 10 V 166 ohms 1210 12 V 223 ohms 2010 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R1 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 PF chip capacitor Do Not Place 22.1 : 1% tolerance Size 0603 0603 0603 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. 0805 Typical Device Data S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25 C, calibrated to device leads) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -22.98 179.98 21.98 177.39 -24.44 3.54 -20.65 -22.69 159.13 21.87 167.91 -25.02 4.82 -20.97 -20.16 143.45 21.63 156.07 -24.85 3.57 -25.40 -20.26 125.22 21.26 144.84 -24.83 4.51 -25.00 -20.94 105.07 20.77 134.31 -24.96 3.28 -23.86 -20.59 89.33 20.29 124.27 -24.48 7.57 -22.22 -20.65 73.36 19.71 115.11 -24.24 5.92 -20.71 -20.44 58.55 19.14 106.54 -23.97 6.93 -19.65 -19.79 46.75 18.54 98.41 -23.30 9.91 -18.55 -16.65 30.04 17.95 91.26 -23.27 8.63 -16.11 -17.12 24.85 17.54 85.95 -23.55 5.06 -16.52 -17.94 23.45 17.04 78.85 -22.50 5.49 -16.78 -19.00 24.66 16.52 71.97 -22.27 7.44 -17.04 -20.08 31.09 16.06 65.74 -21.97 7.62 -16.83 -21.05 44.35 15.56 59.22 -21.88 5.59 -16.19 -20.77 62.21 15.09 52.71 -21.42 3.70 -14.57 -19.88 76.48 14.56 46.28 -21.00 1.61 -12.93 -18.40 88.30 14.12 40.49 -20.52 -0.58 -11.61 -17.26 96.65 13.65 34.69 -20.29 -4.52 -10.81 -16.54 101.15 13.23 28.72 -20.01 -4.49 -10.22 -16.75 103.13 12.85 23.29 -20.11 -4.65 -9.92 -17.21 108.11 12.49 18.36 -19.52 -7.40 -10.06 -18.69 112.12 12.14 13.87 -19.18 -10.39 -10.32 -20.02 123.21 11.90 8.93 -19.00 -12.21 -10.98 -22.38 131.64 11.68 4.17 -18.60 -14.81 -11.52 Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S22 (ang) -5.68 -15.75 -43.37 -70.94 -91.79 -112.20 -125.75 -135.37 -142.40 -127.79 -139.55 -152.45 -171.24 169.31 149.95 132.43 122.50 114.50 107.97 105.55 105.40 102.86 103.16 105.01 103.93 Device S-parameters are available for download on the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 4 of 6 February 2005 AG303-63 The Communications Edge TM Product Information InGaP HBT Gain Block AG303-63 (SOT-363 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Product Marking Outline Drawing The component will be marked with an "E" designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Level 4 Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 1 Standard: JEDEC Standard J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85qC 350q C/W 137q C MTTF vs. GND Lead Temperature 10000 1. The thermal resistance is referenced from the hottest part of the junction to the ground pin (pin 4). 2. This corresponds to the typical biasing condition of +4.23V, 35 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. MTTF (million hrs) Parameter 1000 100 10 1 60 70 80 90 100 110 Ground Lead Temperature (C) 120 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 5 of 6 February 2005 AG303-63 The Communications Edge TM Product Information InGaP HBT Gain Block AG303-63G (Green / Lead-free SOT-363 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the leads is annealed matte tin over copper. Product Marking Outline Drawing The component will be marked with a " J" designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the " Application Notes" section. MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 Standard: JEDEC Standard J-STD-020 Land Pattern Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135" ) diameter drill and have a final plated thru diameter of .25 mm (.010" ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85qC 350q C/W 137q C 1. The thermal resistance is referenced from the hottest part of the junction to the ground pin (pin 4). 2. This corresponds to the typical biasing condition of +4.23V, 35 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. MTTF vs. GND Lead Temperature 10000 MTTF (million hrs) Parameter 1000 100 10 1 60 70 80 90 100 110 Ground Lead Temperature (C) 120 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 6 of 6 February 2005