KSR-9015-000 1
SRA2211
PNP Silicon Transistor
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
14.0±0.40
Descriptions
• Switching application
• Interface circuit and driver circuit application
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and manufacturing process
• High packing density
Ordering Information
Type NO. Marking Package Code
SRA2211 SRA2211 TO-92
Outline Dimensions unit : mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
■ Equivalent Circuit
R1 B(IN)
E(COMMON)
C(OUT)
R1 = 10KΩ
PIN Connections
1. Emitter
2. Collector
3. Base
KSR-9015-000 2
SRA2211
7
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Power Dissipation PD 625 mW
Junction Temperature TJ 150
°C
Storage Temperature TSTG -55 ∼ 150 °C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector Cut-off Current ICBO V
CB=-50V, IE=0 - - -500 nA
Emitter Cut-off Current IEBO V
EB=-5V, IC=0 - - -500 nA
DC Current Gain hFE V
CE=-5V, IC=-1mA 120 - - -
Collector-Emitter Saturation Voltage VCE(SAT) I
C=-10mA, IB=-0.5mA - -0.1 -0.3 V
Transition Frequency fT
* VCE=-10V, IC=-5mA - 250 - MHz
Input Resistance R1 - - 10 -
KΩ
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 2 VCE(SAT) - IC
Fig. 1 hFE - IC
