Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim Germany Humidity Test QUALITY AND RELIABILITY Failure Modes: Degradation of electrical leakage characteristics due to moisture penetration into plastic packages. Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS, ICES, IDRM, IRRM, IGSS, IGES, VTH. IXYS is committed to setting a new standard for excellence in Power Semiconductors. Reflecting our dedication to industry leadership in the manufacture of medium to high power devices, reliability has assumed a primary position in raw material selection, design, and process technology. Reliability utilizes information derived from applied research, engineering design, analysis of field applications and accelerated stress testing and integrates this knowledge to optimize device design and manufacturing processes. All areas that impact reliability have received considerable attention in order to achieve our goal to be the # 1 Reliability Supplier of Power Semiconductor products. We believe IXYS products should be the most reliable components in your system. We have committed significant resources to continuously improve and optimize our device design, wafer fab processes, assembly processes and test capabilities. As a result of this investment, IXYS has realized a dramatic improvement in reliability performance on all standardized tests throughout the product line. Excellence in product reliability is "built-in", not testedin. Moreover, it requires a total systems approach, involving all parties: from design to raw materials to manufacturing. In addition to qualifying new products released to the market, life and environmental tests are periodically performed on standard products to maintain feedback on assembly and fabrication performance to assure product reliability. Further information on reliability of power devices is provided on www.ixys.com. Power Cycle Failure Modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling can cause thermal and electrical performance degradation. Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS, ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM, VRRM. TERMS IN TABLES SUMMARY TABLES 1 AND 2: AF: acceleration factor AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k } (1) Ea: activation energy; @ HTRB Ea = 1.0 eV @ HTGB Ea = 0.4 eV k: Boltzmann's constant 8.6*10-5 eV/K T1: abs. application junction temperature (273+Tj) K T2: abs. test junction temperature (273+Tj) K UCL: upper confidence limit (60%) Total Failures @ 60% UCL: RELIABILITY TESTS High Temperature Reverse Bias (HTRB) N = r + dr Failure Modes: Gradual degradation of break-down characteristics due to presence of foreign materials and polar/ionic contaminants disturbing the electric field termination structure. Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM, IDSS, ICES, IDRM, IRRM, VTH. (2) r: number of failed devices dr: additional term, depending on both r and UCL MTTF: Mean Time To Failures = 1/Failure Rate FIT: 1 FIT = 1 failure / 109 hrs High Temperature Gate Bias (HTGB) TABLES 3: Failure Modes: Rupture of the gate oxide due to localized thickness variations, structural anomalies, particulates in the oxide, channel inversion due to presence of mobile ions in the gate oxide. Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES. T: max Tj - min Tj during Test DEFINITION OF FAILURE Failure criteria are defined according to IEC 60747 standard series Temperature Cycle Failure modes: Thermal fatigue of silicon-metal and metal-metal interfaces due to heating and cooling, causing thermal and electrical performance degradation. Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF. 2 Summary of Tables 1A - 1H: HTRB Failure Rate [FIT] 125C, 60% UCL Failure Rate [FIT] 90C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} Total Equivalent Device Hours @ 125C {AF eq. (1)} MTTF 125C 60% UCL (Years) 90C 60% UCL Table 1A Table 1B Table 1C Table 1D Table 1E Table 1F Table 1G Table 1H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode ISOPLUS discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) 592 35 169 4932 2 3 12483 747 13 116 0 0.92 45956 2752 15 160 1 2 17190 1029 17 170 0 0.92 1939 116 35 645 0 0.92 845 51 24 570 0 0.92 16855 1009 12 210 1 2 20 456 1 - 5066720 193 3220 73702 9 153 43520 2 41 53520 7 111 474548 59 983 1089301 135 2257 118658 7 113 465622 - Summary of Table 2A - 2C: HTGB Failure Rate [FIT] 125C, 60% UCL Failure Rate [FIT] 90C, 60% UCL Total Lots Tested Total Devices Tested Total Actual Failures 60% UCL {eq. (2)} Total Equivalent Device Hours @ 125C {AF eq. (1)} MTTF 125C 60% UCL (Years) 90C 60% UCL Table 2A Table 2B Table 2C MOSFET/IGBT MOSFET/IGBT ISOPLUS discrete device *) Module 231 75 138 4030 0 0.92 4606 1486 15 210 0 0.92 15 460 0 - 3976960 493 1530 199740 25 77 506800 - *) including ISOPLUS IXYS Semiconductor GmbH 3 Summary of Tables 3A - 3H: Power Cycle Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Table 3A Table 3B Table 3C Table3D Table 3E Table 3F Table 3G Table 3H MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) 15 344 0 2960000 7 139 0 751300 5 50 0 850000 5 50 0 370000 10 190 0 410000 6 224 0 1520088 9 140 0 380000 2 100 0 280000 Summary of Tables 4A - 4J: Temperature Cycle Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Table 4A Table 4B Table 4C Table4D Table 4E Table 4F Table 4G Table 4H Table 4J MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) 13 353 0 135700 12 119 0 8400 27 290 2 19500 20 210 0 14900 25 450 0 29900 19 614 0 302000 17 300 0 14300 Summary of Tables 5A, 5E - 5J: Humidity Test Total Lots Tested Total Devices Tested Total Failures Total Device Cycles Table 5A Table 5E Table 5F Table 5G Table 5H Table 5J MOSFET/IGBT FRED Schottky Thyr./Diode Isoplus Breakover discrete device *) *) Diode*) discrete device*) 4 80 0 24800 8 138 0 11088 9 294 1 64384 3 60 0 3840 *) including ISOPLUS IXYS Semiconductor GmbH 4 Diode 2 40 0 1920 4 80 0 3840 Diode 18 532 0 198200 4 80 0 4000 HTRB (Tables 1A .. 1J) TABLE 1A: MOSFET/IGBT single device Date Code # Part Number or Voltage Test # [V] 1 IXBH16N170 TP0619 960 2 IXBH16N170 TP0619 960 3 IXBH40N160 1513 1280 4 IXDH20N120 1436 960 5 IXDH20N120D1 2065 960 6 IXEH28N60C2D2 1578 600 7 IXFA7N80P K533 640 8 IXFB100N50P SP0737 460 9 IXFB44N100P SP0721 800 10 IXFH12N120P SP0715 960 11 IXFH15N100P SK0636 800 12 IXFH20N100P SP0716 800 13 IXFH20N60 SK0544 480 14 IXFH22N50P N/A 400 15 IXFH26N60Q SK0604 480 16 IXFH69N30P SK0527 240 17 IXFK21N100Q SP0737 800 18 IXFK44N55Q SP0737 440 19 IXFL60N80P SP0605 640 20 IXFN82N60P TJ0645E 480 21 IXFP12N50PM K550 400 22 IXFQ14N80P SK0709 640 23 IXFR12N100Q TP0703 800 24 IXFR14N100Q2 SP0732 800 25 IXFR26N100P SP0742 800 26 IXFX48N50Q ZP0545 400 27 IXFX73N30Q SK0613 240 28 IXFX90N30 SK0613 240 29 IXGH20N170P K0716E1 960 30 IXGH20N170P TP0632 960 31 IXGH25N250 TJ0600E 960 32 IXGH28N60B3D1 SP0732 480 33 IXGH30N120B3 TP0606 960 34 IXGH36N60B3D1 SP0732 480 35 IXGH48N60B3 SK0607 480 36 IXGH64N60B3 SK0608 480 37 IXGH72N60B3 SK0608 480 38 IXGH8N100 N/N 800 39 IXGK28N140B3H1 TP0651 960 40 IXGN200N60A2 SP0723 480 41 IXGP120N33TBM-A K723 264 42 IXGP50N33TC K0652 264 43 IXGP70N33TBM-A K726 264 44 IXGP70N33TBM-A K728 264 45 IXGP90N33TB K06251 264 46 IXGP90N33TBM-A K06251 264 47 IXGQ120N30TCD1 SK0631 240 48 IXGQ120N33TB SK0651 264 49 IXGQ120N33TCD1 SK0639 264 50 IXGQ150N30TCD1 SK0631 240 51 IXGQ150N33TCD1 SK0639 264 52 IXGQ160N30PB SK0601 240 53 IXGQ160N30PB SK0601 240 54 IXGQ160N30PB SK0601 240 55 IXGQ160N30PB SK0601 240 56 IXGQ180N33TB SK0711 264 57 IXGQ180N33TC SK0649 264 58 IXGQ180N33TCD1 SK0639 264 59 IXGQ200N30PB SK0631 240 60 IXGQ240N30PB SK0631 240 IXYS Semiconductor GmbH Temp. [C] 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 1000 168 168 168 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 5 Sample Size 30 30 20 20 20 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 60 30 30 30 30 30 30 30 30 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 30000 30000 3360 3360 3360 20000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 60000 30000 30000 30000 30000 30000 30000 30000 30000 Remark TABLE 1A (cont'd): MOSFET/IGBT single device Date Code # Part Number or Voltage Test # [V] 61 IXGQ240N30PB SK0631 240 62 IXGQ240N30PB SK0631 240 63 IXGQ240N30PB SK0631 240 64 IXGQ70N33TB SK0650 264 65 IXGQ85N33PCD1 SK0613 264 66 IXGQ85N33PCD1 SK0638 264 67 IXGQ86N30PB K0543 240 68 IXGQ90N27PB SK0621 216 69 IXGQ90N27PB SK0640 216 70 IXGQ90N30TCD1 SK0631 240 71 IXGQ90N33TC SK0649 264 72 IXGQ90N33TCD1 SK0639 264 73 IXGQ90N33TCD1 SK0728 264 74 IXGR120N60C2 SP0722 480 75 IXGR48N60C3D1 SP0722 480 76 IXGX120N60B SP0719 480 77 IXGX72N60B3H1 SP0739 480 78 IXKC13N80C 1769 640 79 IXKC25N80C 1590 640 80 IXKH20N60C5 1631 480 81 IXKH35N60CS 1984 480 82 IXKH35N60CS 1986 480 83 IXKP10N60C5M 1693 480 84 IXKP13N60C5M 1716 480 85 IXKP20N60C5 1653 480 86 IXKP24N60C5 1671 480 87 IXKR25N80C 1521 640 88 IXKT70N60C5 2068 480 89 IXSH30N60B2D1 SP0506 480 90 IXSK40N60CD1 SK0722 480 91 IXTA36N30P SK0603 240 92 IXTA36N30P K0621 240 93 IXTA36N30P K640 240 94 IXTA50N25T K545 200 95 IXTA50N28T K0606 224 96 IXTA50N28T K634 224 97 IXTA50N28T K640 224 98 IXTA60N20T K545 160 99 IXTA60N20T SK0601 160 100 IXTA75N10P K0531 80 101 IXTA76N25T K0704 200 102 IXTC110N25T SP0721 200 103 IXTC200N075T SP0627 60 104 IXTH130N20T SP0721 160 105 IXTH150N17T SK0718 140 106 IXTH160N15T SK0721 120 107 IXTH1N80P TP0604 640 108 IXTH30N50L TK0738 400 109 IXTH3N100P TP0639 800 110 IXTH76N25T SP0613 200 111 IXTH86N25T SP0638 200 112 IXTH8P50 SK0712 400 113 IXTK180N15P SP0552 120 114 IXTK34N80 SP0546 640 115 IXTK34N80 SP0603 640 116 IXTK34N80 SP0603 640 117 IXTP08N100P K625 800 118 IXTP08N120P K0709 960 119 IXTP14N60PM K631 480 120 IXTP14N60PM K643 480 IXYS Semiconductor GmbH Temp. [C] 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 150 150 125 150 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 168 168 1000 1000 1000 800 168 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 6 Sample Size 30 30 30 30 27 30 30 30 30 30 30 30 30 30 30 30 30 20 20 20 20 20 20 20 20 20 20 20 30 30 30 30 30 30 30 30 30 30 30 30 25 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 2 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 30000 30000 30000 30000 27000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 20000 20000 20000 3360 3360 20000 20000 20000 16000 3360 20000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 25000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 Remark no deviations after 168h TABLE 1A (cont'd): MOSFET/IGBT single device Date Code # Part Number or Voltage Test # [V] 121 IXTP160N075T K0707 60 122 IXTP17N30T K648 240 123 IXTP18N60PM K631 480 124 IXTP1N100P K636 800 125 IXTP1R4N100P K636 800 126 IXTP1R4N120P K638 960 127 IXTP2R4N120P K636 960 128 IXTP32N20T K647 160 129 IXTP36N15T K648 120 130 IXTP36N25T K636 200 131 IXTP36N30T K641 240 132 IXTP44N25T K636 200 133 IXTP50N25T K738 200 134 IXTP56N15T K636 120 135 IXTP62N25T K648 200 136 IXTP74N15T K636 120 137 IXTP76N075T K640 60 138 IXTP76N075T K726 60 139 IXTP76N075T SS0728 60 140 IXTP8N50P K646 400 141 IXTP8N50P AK732 400 142 IXTP90N15T K647 120 143 IXTQ182N055T SK0612 44 144 IXTQ22N50P SS0633 400 145 IXTQ22N60P SK0539 480 146 IXTQ22N60P SK0604 480 147 IXTQ22N60P SK0609 480 148 IXTQ22N60P SK0608 480 149 IXTQ22N60P SK0608 480 150 IXTQ22N60P SK0609 480 151 IXTQ22N60P SK0609 480 152 IXTQ26N50P SK0604 400 153 IXTQ28N15P SK0653 120 154 IXTQ36P15P SK0652 120 155 IXTQ44N30T SK0629 240 156 IXTQ64N25P SK0535 200 157 IXTQ74N20P SK0515 160 158 IXTQ76N25T SK0613 200 159 IXTQ82N25T SK0603 200 160 IXTQ88N28T SK0545 224 161 IXTQ88N28T SK0641 224 162 IXTQ88N30P SK0605 240 163 IXTQ88N30T SK0638 240 164 IXTQ96N20P SS0631 160 165 IXTQ96N25T SK0648 200 166 IXTT88N30P SP0626 240 167 IXTV18N60PS SP0636 480 168 IXTV230N085TS SP0629 68 169 IXUC200N055 1594 44 IXYS Semiconductor GmbH Temp. [C] 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 7 Sample Size 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 20 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 20000 Remark TABLE 1B: MOSFET/IGBT Module Date Code # Part Number or Test # 1 GWM160-0055P3 1524 2 MIAA20WD600TMH 1844 1844 3 MIAA20WD600TMH 4 MID145-12A3 2031 5 MKI75-06A7T 1847 6 MKI80-06T6K 1818 7 MUBW36-12E7 1898 8 MUBW50-12T8 1777 9 MUBW75-17T8 2001 10 MUBW75-17T8 2001 11 MWI150-12T8T 1897 12 MWI30-06A7T 2069 13 VMO60-05F 1552 Voltage [V] 240 1120 480 960 480 480 960 960 1540 1360 960 480 400 Temp. [C] 150 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 168 1000 1000 168 168 168 1000 1000 1000 1000 1000 168 168 Sample Size 6 10 10 10 10 10 10 10 5 5 10 10 10 Failures TABLE 1C: Thyristor/Diode Module Date Code # Part Number or Test # 1 MCC132-16io1 1509 2 MCC132-16io1 1980 3 MCC162-08io1 1624 4 MCC162-16io1 1593 5 MCC21-16io8 1812 6 MCC26-16io1 1539 7 MCC310-16 1696 8 MCC312-16 2028 9 MCC44-16io1 1747 10 MCC44-16io1 2006 11 MCC95-16io1 1701 12 MCC95-16io1 1862 13 MCD56-16io1 1587 14 MDD172-16n1 1554 15 MDD95-16 2032 Voltage [V] 1120 1120 800 1120 1120 1120 1120 1120 1120 1120 1120 1120 1120 1120 1120 Temp. [C] 125 125 126 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 168 168 168 168 168 168 1000 168 168 168 168 168 168 168 Sample Size 10 10 20 10 10 10 10 10 10 10 10 10 10 10 10 Failures TABLE 1D: Controller/Rectifier Bridge Date Code # Part Number or Test # 1 MMO75-16io1 1727 2 MMO90-16 1710 3 VBO19-16DT1 2011 4 VBO19-16DTI 1584 5 VBO40-16NO6 1860 6 VHF36-16io5 1542 7 VHF36-16io5 1732 8 VUB72-16 1657 9 VUB72-16No1 2004 10 VUB72-16No1 2004 11 VUB72-16No1 2004 12 VUO190-18NO7 2026 13 VUO25-16NO8 1581 14 VUO31-18 1863 15 VUO34-18NO1 1861 16 VWO140-16 1684 17 VY40-16io1 1745 Voltage [V] 1120 1120 1120 1120 1120 1120 1120 1120 1120 960 960 1260 1120 1260 1260 1120 1120 Temp. [C] 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 168 168 168 168 168 168 168 168 168 168 168 1000 168 1000 168 1000 168 Sample Size 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Failures IXYS Semiconductor GmbH 8 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 1008 10000 10000 1680 1680 1680 10000 10000 5000 5000 10000 1680 1680 Device Hours [hrs] 10000 1680 3360 1680 1680 1680 1680 10000 1680 1680 1680 1680 1680 1680 1680 Device Hours [hrs] 1680 1680 1680 1680 1680 1680 1680 1680 1680 1680 1680 10000 1680 10000 1680 10000 1680 Remark Konverter tested Inverter tested Remark I_R @ increased Remark TABLE 1E: FRED # Part Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 DHF30IM600PN DHF30IM600QB DHG10I1200PM DHG10I600PM DHG20C600QB DHG30I1200HA DHG30I1200HA DHG40C1200HB DHG40C600PB DHG60C600HB DPG15I400PM DPG20C200PN DPG20C400PN DPG30C300HB DPG30C300PB DPG60C200QB DPG60C300HB DPG60C300QB DPG60C400QB DPG60IM300PC DSEC60-02Aq DSEI2x31-06C DSEI2x61-12B DSEP15-06A DSEP29-03 DSEP29-06A DSEP2x61-12A DSEP30-06BR DSEP30-12AR DSEP60-03A DSEP60-06A DSEP75-06AR DSEP8-03AS MEO450-12 MEO500-06DA Date Code or Test # 1508 1625 1682 1685 1711 1652 1734 1903 2037 1668 1770 1692 1768 1644 1923 1608 1525 1481 1446 1643 1929 1563 1607 2020 1954 1736 1984 1952 1634 1537 1572 1619 1738 1826 1934 Voltage [V] 480 480 960 480 480 960 960 960 480 480 320 240 320 240 240 160 240 240 320 240 160 480 960 480 240 480 960 480 960 240 480 480 240 960 480 Temp. [C] 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 168 168 168 168 168 168 168 168 168 168 168 1000 1000 186 168 Sample Size 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 20 20 20 10 20 20 20 20 20 20 6 9 Failures Date Code or Test # 1507 1907 1981 1906 1714 1781 1782 1674 1942 1622 1718 1783 1672 1673 2019 1871 1709 1467 2039 1723 1838 1982 1600 1857 Voltage [V] 150 150 100 100 45 100 100 200 45 36 24 36 60 12 36 12 100 100 100 150 150 20 150 150 Temp. [C] 125 125 125 125 125 125 125 125 100 100 100 100 125 100 100 100 125 125 125 150 150 100 125 125 Time [hrs] 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 168 1000 1000 168 168 1000 1000 168 168 168 Sample Size 20 20 20 20 20 16 20 20 20 20 20 20 20 20 20 20 20 10 10 77 77 20 20 20 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 20000 3360 1680 1680 3360 3360 3360 1680 3360 3360 3360 3360 20000 20000 1116 1512 Remark Device Hours [hrs] 20000 20000 20000 20000 20000 16000 20000 20000 20000 20000 20000 20000 20000 20000 3360 20000 20000 1680 1680 77000 77000 3360 3360 3360 Remark TABLE 1F: Schottky Diode # Part Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 DSA120C150QB DSA120C150QB DSA30C100HB DSA30C100PN DSA30C45HB DSA60C100PB DSA70C100HB DSA90C200HB DSB10I45PM DSB15IM45IB DSB30C30PB DSB30C45PB DSB30C60PB DSB40C15PB DSS10-0045B DSS20-0015B DSS20-01AC DSS2x41-01A DSS2x41-01A DSS6-015AS DSS6-015AS DSSK38-0025B DSSK60-015A DSSK60-015AR IXYS Semiconductor GmbH 9 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 TABLE 1G: Thyristor/Diode single device Date Code # Part Number or Voltage Test # [V] 1 CS22-08io1M 2014 560 2 CS30-16io1 1855 1120 3 CS30-16io1DCSN 1920 1120 4 CS35-14 2008 980 5 CS45-16io1 1808 1120 6 CS60-16io1 1830 1120 7 CS8-12io2 1605 1280 8 DSA1-16D 2023 1120 9 DSAI75-16B 1858 1120 10 DSDI60-16A 1569 1280 11 DSP25-16 1564 1120 12 DSP25-16 2016 1120 Temp. [C] 125 125 125 125 125 125 125 150 150 125 150 150 Time [hrs] 168 168 1000 168 168 1000 168 168 168 168 168 168 Sample Size 20 20 20 10 20 20 10 20 10 20 20 20 Failures 0 0 1 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 3360 3360 20000 1680 3360 20000 1680 3360 1680 3360 3360 3360 Remark I_DRM increased TABLE 1H: ISOPLUS # Part Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 CS45-16io1 DSEP30-06BR DSEP30-12AR DSEP75-06AR DSS20-01AC GWM160-0055P3 IXEL40N400 IXFL60N80P IXFR12N100Q IXFR14N100Q2 IXFR26N100P IXGR120N60C2 IXGR48N60C3D1 IXKC13N80C IXKC25N80C IXKR25N80C IXTC110N25T IXTC200N075T IXUC200N055 LKK47-06C5 Date Code or Test # 1808 1952 1634 1619 1709 1524 1611 SP0605 TP0703 SP0732 SP0742 SP0722 SP0722 1769 1590 1521 SP0721 SP0627 1594 1675 Voltage [V] 1120 480 960 480 100 240 3000 640 800 800 800 480 480 640 640 640 200 60 44 480 Temp. [C] 125 125 125 125 125 150 125 125 125 125 125 125 125 125 125 125 125 125 125 150 Time [hrs] 168 168 168 1000 1000 168 168 1000 1000 1000 1000 1000 1000 1000 1000 168 1000 1000 1000 1000 Sample Size 20 20 20 20 20 6 10 30 30 30 30 30 30 20 20 20 30 30 20 20 Failures Date Code or Test # 1941 1800 1576 2096 Voltage [V] 640 800 800 800 Temp. [C] 125 125 125 125 Time [hrs] 168 168 168 168 Sample Size 20 20 20 20 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 Device Hours [hrs] 3360 3360 3360 20000 20000 1008 1680 30000 30000 30000 30000 30000 30000 20000 20000 3360 30000 30000 20000 20000 Remark I_DSS increased TABLE 1J: Breakover Diode # Part Number 1 2 3 4 IXBOD1-08 IXBOD1-09 IXBOD1-10 IXBOD1-10 IXYS Semiconductor GmbH 10 0 0 0 0 Device Hours [hrs] 3360 3360 3360 3360 Remark HTGB (Tables 2A .. 2C) TABLE 2A: MOSFET/IGBT single device Date Code # Part Number or Voltage Test # [V] 1 IXBH42N170 TK0734 16 2 IXDN75N120 1606 16 3 IXEH25N120D1 1757 16 4 IXEH40N120D1 1482 16 5 IXER35N120D1 1950 16 6 IXFA7N80P K533 16 7 IXFB100N50P SP0737 16 8 IXFB44N100P SP0721 16 9 IXFH12N120P TJ1041E 16 10 IXFH15N100P SK0636 16 11 IXFH20N100P SP0716 16 12 IXFH26N60Q SK0604 16 13 IXFK21N100Q SP0737 16 14 IXFK44N55Q SP0737 16 15 IXFL100N50P SP0549 16 16 IXFL60N80P SP0605 16 17 IXFL82N60P SP0550 16 18 IXFP12N50PM K550 16 19 IXFQ14N80P SK0709 16 20 IXFR12N100Q TP0703 16 21 IXFR14N100Q2 SP0732 16 22 IXFR26N100P TJ1159E 16 23 IXFX73N30Q SK0613 16 24 IXFX90N30 SK0613 16 25 IXGA42N30C3 K732 16 26 IXGA60N30C3 K732 16 27 IXGH100N30C3 SK0644 16 28 IXGH120N30C3 SK0638 16 29 IXGH1889 TP0736 16 30 IXGH20N170P K0716E1 20 31 IXGH28N60B3 SK0608 16 32 IXGH30N120B3 TP0606 16 33 IXGH48N60B3 SK0607 16 34 IXGH64N60B3 SK0608 16 35 IXGH72N60B3 SK0608 16 36 IXGH85N30C3 SK0644 16 37 IXGN200N60A2 SP0723 16 38 IXGP120N33TBM-A K723 16 39 IXGP24N120C3 K0652 16 40 IXGP50N33TC K0652 16 41 IXGP70N33TBM-A K726 16 42 IXGP90N33TBM-A K06251 16 43 IXGQ120N30TCD1 SK0631 16 44 IXGQ120N33TCD1 SK0639 16 45 IXGQ150N30TCD1 SK0631 16 46 IXGQ150N33TCD1 SK0639 16 47 IXGQ160N30PB SK0601 16 48 IXGQ160N30PB SK0601 16 49 IXGQ160N30PB SK0601 16 50 IXGQ180N30TCD1 SK0632 16 51 IXGQ180N33TB SK0711 16 52 IXGQ180N33TC SK0649 16 53 IXGQ180N33TCD1 SK0639 16 54 IXGQ200N30PB SK0631 16 55 IXGQ240N30PB SK0631 16 56 IXGQ70N33TB SK0650 16 57 IXGQ85N33PCD1 SK0613 16 58 IXGQ85N33PCD1 SK0638 16 59 IXGQ90N27PB SK0611 16 60 IXGQ90N27PB SK0640 16 IXYS Semiconductor GmbH Temp. [C] 125 150 150 150 150 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 168 168 168 168 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 11 Sample Size 30 10 20 20 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 13 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 27 30 30 30 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 30000 1680 3360 3360 3360 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 13000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 27000 30000 30000 30000 Remark TABLE 2A (contd): MOSFET/IGBT single device Date Code # Part Number or Voltage Test # [V] 61 IXGQ90N30TCD1 SK0631 16 62 IXGQ90N33TB SK0651 16 63 IXGQ90N33TC SK0649 16 64 IXGQ90N33TCD1 SK0639 16 65 IXGQ90N33TCD1 SK0728 16 66 IXGQ90N33TCD4 SK0721 16 67 IXGR120N60C2 SP0722 16 68 IXGR40N60C2D1 SP0635 16 69 IXGR48N60C3D1 SP0722 16 70 IXGX72N60B3H1 SP0739 16 71 IXKH70N60C5 1926 16 72 IXKP13N60C5M 1716 16 73 IXSH30N60B2D1 SP0506 16 74 IXSK40N60CD1 SK0722 16 75 IXTA36N30P SK0603 16 76 IXTA36N30P K0621 16 77 IXTA36N30P K640 16 78 IXTA50N25T SK0604 16 79 IXTA50N28T K545 16 80 IXTA50N28T K0606 16 81 IXTA50N28T K634 16 82 IXTA50N28T K640 16 83 IXTA60N20T SK0601 16 84 IXTA76N25T K0704 16 85 IXTC110N25T SP0721 16 86 IXTC200N075T SP0627 16 87 IXTH130N20T SP0721 16 88 IXTH150N17T SK0718 16 89 IXTH160N15T SK0721 16 90 IXTH1N250 TP0638 16 91 IXTH30N50L TK0738 16 92 IXTH76N25T SP0613 16 93 IXTH86N25T SP0638 16 94 IXTH8P50 SK0712 16 95 IXTK180N15P SP0552 16 96 IXTN79N20 2052 16 97 IXTP08N100P K625 16 98 IXTP08N120P K0709 16 99 IXTP14N60PM K631 16 100 IXTP14N60PM K643 16 101 IXTP160N075T K0707 16 102 IXTP17N30T K648 16 103 IXTP18N60PM K631 16 104 IXTP1R4N120P K638 16 105 IXTP2R4N120P K636 16 106 IXTP32N20T K647 16 107 IXTP36N15T K648 16 108 IXTP36N25T K636 16 109 IXTP36N30T K641 16 110 IXTP44N25T K636 16 111 IXTP50N25T K738 16 112 IXTP56N15T K636 16 113 IXTP62N25T K648 16 114 IXTP74N15T K636 16 115 IXTP76N075T K640 16 116 IXTP76N075T K726 16 117 IXTP76N075T SS0728 16 118 IXTP8N50P K646 16 119 IXTP8N50P AK732 16 120 IXTP90N15T K647 16 IXYS Semiconductor GmbH Temp. [C] 125 125 125 125 125 125 125 125 125 125 150 150 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 150 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 168 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 168 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 12 Sample Size 30 30 30 30 20 30 30 30 30 30 20 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 30000 30000 30000 30000 20000 30000 30000 30000 30000 30000 3360 20000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 3360 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 Remark TABLE 2A (contd): MOSFET/IGBT single device Date Code # Part Number or Voltage Test # [V] 121 IXTQ182N055T SK0612 16 122 IXTQ182N055T SK0612 16 123 IXTQ22N50P SS0633 16 124 IXTQ22N60P SK0604 16 125 IXTQ26N50P SK0604 16 126 IXTQ28N15P SK0653 16 127 IXTQ36P15P SK0652 16 128 IXTQ76N25T SK0613 16 129 IXTQ82N25T SK0514 16 130 IXTQ82N25T SK0603 16 131 IXTQ88N28T SK0641 16 132 IXTQ88N30P SK0605 16 133 IXTQ88N30T SK0638 16 134 IXTQ96N20P SS0631 16 135 IXTQ96N25T SK0648 16 136 IXTT88N30P SP0626 16 137 IXTV18N60PS SP0636 16 138 IXTV230N085TS SP0629 16 Temp. [C] 125 150 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 1000 500 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 Sample Size 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Failures TABLE 2B: MOSFET/IGBT Module Date Code # Part Number or Test # 1 GWM100-01X1SL 1965 1720 2 GWM120-0075P3SL 3 MDI300-12A4 1555 4 MDI75-12 1931 5 MIAA20WD600TMH 1844 6 MII300-12A4 2012 7 MII400-12E4 1741 8 MII75-12A3 1541 1992 9 MIXA15WB1200TED 10 MIXA35WB1200TED 1991 11 MUBW15-12A6K 1553 12 MUBW50-12E8 1469 13 MWI30-06A7T 1635 14 MWI30-06A7T 2069 15 VII130-06P1 2025 Voltage [V] 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 Temp. [C] 150 150 125 125 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 168 1000 126 168 1000 168 168 168 1000 1000 168 168 168 168 168 Sample Size 10 80 10 10 10 10 10 10 5 5 10 10 10 10 10 Failures Voltage [V] 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 Temp. [C] 150 150 150 150 125 125 125 125 125 125 125 125 125 125 125 Time [hrs] 168 1000 168 168 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 Sample Size 10 80 20 20 30 30 30 30 30 30 30 30 30 30 30 Failures 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Device Hours [hrs] 30000 15000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 Remark Device Hours [hrs] 1680 80000 1260 1680 10000 1680 1680 1680 5000 5000 1680 1680 1680 1680 1680 Remark Device Hours [hrs] 1680 80000 3360 3360 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 30000 Remark TABLE 2C: ISOPLUS # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Part Number GWM100-01X1SL GWM120-0075P3SL IXER35N120D1 IXER35N120D1 IXFL100N50P IXFL60N80P IXFL82N60P IXFR12N100Q IXFR14N100Q2 IXFR26N100P IXGR120N60C2 IXGR40N60C2D1 IXGR48N60C3D1 IXTC110N25T IXTC200N075T IXYS Semiconductor GmbH Date Code or Test # 1965 1720 1950 1950 SP0549 SP0605 SP0550 TP0703 SP0732 TJ1159E SP0722 SP0635 SP0722 SP0721 SP0627 13 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 POWER CYCLE (Tables 3A ..3H) TABLE 3A: MOSFET/IGBT single device Date Code # Part Number or Tj(max) Test # [C] 1 IXBH9N160G 1759 125 2 IXDH30N120D1 1940 125 3 IXFN82N60P SP0551 4 IXFX73N30Q SK0613 5 IXFX90N30 SK0613 6 IXGQ85N33PCD1 SK0614 7 IXGQ90N27PB SK0611 8 IXKH20N60C5 1987 125 9 IXKP13N60C5M 1716 125 10 IXSH30N60B2D1 SP0506 11 IXTP14N60PM K643 12 IXTP18N60PM K631 13 IXTQ26N50P SK0604 14 IXTQ76N25T SK0613 15 IXTQ96N20P SS0631 - [K] 80 80 100 100 100 100 100 80 80 100 50 50 100 100 100 Number of Cycles 2000 2000 10000 10000 10000 10000 10000 2000 10000 10000 10000 10000 10000 10000 10000 Sample Size 20 20 24 24 24 24 24 20 20 24 24 24 24 24 24 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 40000 40000 240000 240000 240000 240000 240000 40000 200000 240000 240000 240000 240000 240000 240000 TABLE 3B: MOSFET/IGBT Module Date Code # Part Number or Test # 1960 1 GWM160-0055X1-SL 2 MIAA20WD600TMH 1844 3 MKI75-06A7 1464 4 MKI75-06A7T 1676 5 MKI75-06A7T 1772 6 MKI75-06A7T 1776 7 MUBW20-06A7 1735 Tj(max) [C] 150 125 125 125 125 125 125 [K] 100 80 80 80 80 80 80 Number of Cycles 3000 10000 10000 10000 5000 10000 7130 Sample Size 80 9 10 10 10 10 10 Failures Device Cycles 0 0 0 0 0 0 0 240000 90000 100000 100000 50000 100000 71300 TABLE 3C: Thyristor/Diode Module Date Code # Part Number or Test # 1 MCC162-12io1 2056 2 MCC56-14io1 1472 3 MCD40-16io6 1474 4 MDD95 1875 5 MDD95-18N1 1971 Tj(max) [C] 125 125 125 125 125 [K] 80 80 80 80 80 Number of Cycles 10000 20000 5000 30000 20000 Sample Size 10 10 10 10 10 Failures Device Cycles 0 0 0 0 0 100000 200000 50000 300000 200000 TABLE 3D: Controller, Rectifier Bridge Date Code # Part Number or Tj(max) Test # [C] 1 VBO19-16DT1 2011 125 2 VBO40-16NO6 1860 125 3 VUO121-16NO1 2071 125 4 VUO190-18NO7 2026 125 5 VUO80-16 1456 125 [K] 80 80 80 80 80 Number of Cycles 5000 5000 20000 2000 5000 Sample Size 10 10 10 10 10 Failures Device Cycles 0 0 0 0 0 50000 50000 200000 20000 50000 IXYS Semiconductor GmbH 14 Remark Remark Remark Remark TABLE 3E: FRED Date Code or Test # 1699 1755 1928 1440 1599 1955 1930 1736 1633 2021 Tj(max) [C] 125 125 145 145 150 145 125 150 125 145 [K] 80 80 100 105 105 100 80 105 80 100 Number of Cycles 2000 2000 2000 2000 2000 2000 2000 2000 5000 2000 Sample Size 20 20 20 20 20 20 20 20 10 20 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 40000 40000 40000 40000 40000 40000 40000 40000 50000 40000 Date Code or Test # 2018 1856 1723 1838 1873 1575 Tj(max) [C] 145 125 140 140 150 125 [K] 100 80 100 100 105 80 Number of Cycles 2000 4000 8572 8572 2000 2000 Sample Size 20 10 77 77 20 20 Failures Device Cycles 0 0 0 0 0 0 80000 40000 660044 660044 40000 40000 TABLE 3G: Thyristor/Diode single device Date Code # Part Number or Tj(max) Test # [C] 1 CS30-16io1 2009 125 2 CS35-14 2008 125 3 CS35-14io4 1473 125 4 CS45-12io1 1601 125 5 CS8-12io2 1605 125 6 DSA1-18D 1435 150 7 DSA15IM45IB 1621 125 8 DSA75-16B 1859 150 9 DSI45-08A 1760 150 [K] 80 80 80 80 80 105 80 105 105 Number of Cycles 2000 2000 2000 5000 2000 2000 4000 2000 2000 Sample Size 20 10 10 20 10 20 20 10 20 Failures Device Cycles 0 0 0 0 0 0 0 0 0 40000 20000 20000 100000 20000 40000 80000 20000 40000 [K] 80 100 Number of Cycles 2000 3000 Sample Size 20 80 Failures Device Cycles 0 0 40000 240000 # Part Number 1 2 3 4 5 6 7 8 9 10 DH60-18A DSEC30-02A DSEI120-12A DSEI60-02A DSEI60-12A DSEP12-12A DSEP15-12CR DSEP29-06A DSEP2x61-06A DSEP60-12A Remark TABLE 3F: Schottky Diode # Part Number 1 2 3 4 5 6 DSS16-0045A DSS2x160-01A DSS6-015AS DSS6-015AS DSSk60-0045A DSSK80-006B Remark Remark TABLE 3H: ISOPLUS # Part Number 1 2 DSEP15-12CR GWM160-0055X1 IXYS Semiconductor GmbH Date Code or Test # 1930 1960 Tj(max) [C] 125 150 15 Remark TEMPERATURE CYCLE (Tables 4A ..4J) TABLE 4A: MOSFET/IGBT single device Date Code Low # Part Number or Temp. Test # [C] 1 FII50-12EL 1534 -55 2 IXBH9N160G 1574 -55 3 IXDD404SI 1913 -55 4 IXDD404SIA 1695 -55 5 IXDN75N120 1606 -40 6 IXKC13N80C 1769 -55 7 IXKC25N80C 1590 -55 8 IXKH20N60C5 2013 -40 9 IXKH70N60C5 1926 -40 10 IXKP10N60C5M 1693 -40 11 IXKP13N60C5M 1716 -55 12 IXKT70N60C5 2068 -55 13 IXUC200N055 1802 -55 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 100 50 1000 500 20 100 100 50 50 100 100 1000 90 Sample Size 20 20 83 30 10 20 20 20 20 20 20 20 50 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 2000 1000 83000 15000 200 2000 2000 1000 1000 2000 2000 20000 4500 TABLE 4B: MOSFET/IGBT Module Date Code # Part Number or Test # 1 MDI300-12A4 1555 2 MIAA20WD600TMH 1844 3 MII400-12E4 1741 4 MII75-12A3 1541 5 MIXA15WB1200TED 1992 6 MKI75-06A7T 1562 7 MKI75-06A7T 1724 8 MKI75-06A7T 1724 9 MKI80-06T6K 1818 10 MUBW15-12A7 1466 11 MUBW25-12T7 1896 12 MUBW75-12T8 1731 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 50 100 50 50 100 50 50 50 100 50 100 100 Sample Size 10 9 10 10 10 10 10 10 10 10 10 10 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 500 900 500 500 1000 500 500 500 1000 500 1000 1000 IXYS Semiconductor GmbH Low Temp. [C] -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 16 Remark Remark TABLE 4C: Thyristor/Diode Module Date Code # Part Number or Test # 1 MCC162-14 1816 2 MCC162-14io1 1544 3 MCC162-14io1 1629 4 MCC200-14 1717 5 MCC21-16 1821 6 MCC26-14 2035 7 MCC26-14io1 1641 8 MCC310-12io1 1545 9 MCC310-14io1 1627 10 MCC44-12io1 1540 11 MCC44-16io1 2048 12 MCC44-16io8 1864 13 MCC56-12io1 1449 14 MCC72-14io1 2007 15 MCC95-14io1 1788 16 MCD162-16io1 1884 17 MCD200-14 2010 18 MCD250/16 2059 19 MCD56-16io1 1646 20 MCO600-16io1 1680 21 MDD26-18N1 1749 22 MDD56-16io1 1865 23 MDD56-18N1 2080 24 MDD95-22 1875 25 MDD95-16 1585 26 MDD95-18N1 1971 27 MDI300-12A4 1555 Low Temp. [C] -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 50 50 50 50 100 50 50 50 50 50 100 100 50 50 150 50 50 50 50 50 100 50 50 100 50 100 50 Sample Size 10 10 10 10 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 10 10 10 10 10 10 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 0 500 500 500 500 2000 500 500 500 500 500 1000 1000 500 500 1500 500 500 500 500 500 2000 500 500 1000 500 1000 500 TABLE 4D: Controller, Rectifier Bridge Date Code # Part Number or Test # 1 MMO230-16 1543 2 MMO230-16iO7 1868 3 MMO74-12io6 1615 4 VBO19-16DT1 1648 5 VBO25-12nO2 1726 6 VBO25-12NO2 2005 7 VBO40-16NO6 1860 8 VBO40-16NO6 1860 9 VUB120-16 2034 10 VUB120-16NO2 1636 11 VUB72-16No1 1894 12 VUO36-12NO8 2024 13 VUO36-16 2036 14 VUO36-16nO8 1580 15 VUO80-16 1778 16 VUO82-16NO7 2085 17 VVY40-16io1 1679 18 VVZ40-14 1691 19 VW2x60-14 1443 20 VWO85-12 1570 Low Temp. [C] -40 -40 -55 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 125 Number of Cycles 150 50 300 50 50 50 50 20 50 50 50 50 150 10 100 10 50 100 50 50 Sample Size 10 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1500 1000 3000 500 500 500 500 200 500 500 500 500 1500 100 1000 100 500 1000 500 500 IXYS Semiconductor GmbH 17 Remark V_F increased V_F increased Remark TABLE 4E: FRED # Part Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 DH60-18A DHG10I600PM DHH55-36N1F DPG15I400PM DPG60C300QB DSEE29-06CC DSEI120-12A DSEI120-12A DSEI2x121-02A DSEI2x31-06C DSEI60-06A DSEP15-06A DSEP15-12CR DSEP25-16AR DSEP2x25-12C DSEP30-06BR DSEP30-06CR DSEP8-03AS DSEP8-12A DSEP8-12A DSEP9-06CR MEE250-12I MEE300-06DA MEK300-06 MEO450-12DA Date Code or Test # 1568 1685 1604 1770 1909 1771 1538 1756 2042 1563 1804 2020 1514 1712 1468 1700 2015 1738 1438 1956 1437 1887 2064 1737 2000 Low Temp. [C] -40 -55 -55 -55 -55 -55 -40 -40 -40 -40 -40 -55 -55 -40 -40 -55 -55 -40 -55 -55 -55 -40 -40 -40 -40 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 50 100 100 100 100 100 50 50 20 20 50 50 50 50 50 50 50 100 50 50 50 50 100 50 100 Sample Size 20 20 40 20 20 20 20 20 10 10 20 20 20 20 10 20 20 20 20 20 20 10 10 10 10 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1000 2000 4000 2000 2000 2000 1000 1000 200 200 1000 1000 1000 1000 500 1000 1000 2000 1000 1000 1000 500 1000 500 1000 Date Code or Test # 1907 1906 1674 1622 2018 1709 1856 1985 1596 1596 1492 1723 1807 1982 1557 1457 1591 1573 1575 Low Temp. [C] -55 -55 -55 -55 -55 -55 -40 -40 -55 -55 -55 -55 -55 -55 -55 -55 -55 -55 -55 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 100 100 100 100 50 100 100 50 1000 1000 500 1000 50 50 50 50 200 50 50 Sample Size 20 20 20 20 20 20 10 10 80 80 77 77 20 20 20 20 40 20 20 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 2000 2000 2000 2000 1000 2000 1000 500 80000 80000 38500 77000 1000 1000 1000 1000 8000 1000 1000 Remark TABLE 4F: Schottky Diode # Part Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 DSA120C150QB DSA30C100PN DSA90C200HB DSB15IM45IB DSS16-0045A DSS20-01AC DSS2x160-01A DSS2x61-01A DSS31-0045A DSS31-0045A DSS31-0045A SN DSS6-015AS DSSK30-01A DSSK38-0025B DSSK40-0015B DSSK60-0045B DSSK60-015AR DSSK60-015AR DSSK80-006B IXYS Semiconductor GmbH 18 Remark TABLE 4G: Thyristor/Diode single device Date Code Low # Part Number or Temp. Test # [C] 1 CS20-22-moF1 1888 -55 2 CS22-08io1M 1953 -40 3 CS23-12io2 1959 -40 4 CS30-12io1 1977 -40 5 CS30-16io1DCSN 1820 -40 6 CS35-14io4 1473 -40 7 CS45-16io1 1598 -40 8 CS60-16io1 1830 -40 9 CS8-12io2 1605 -40 10 DSA1-16D 2023 -40 11 DSA17-16A 1703 -40 12 DSA35-16A 1566 -40 13 DSAI35-16A 2067 -40 14 DSAI75-16B 1858 -40 15 DSI45-12A 1805 -40 16 DSP25-16 1564 -40 17 DSP25-16A 1639 -40 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 50 50 20 50 100 20 50 100 20 50 20 20 20 20 50 50 50 Sample Size 30 20 20 20 20 10 20 20 10 20 20 10 10 10 20 20 20 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1500 1000 400 1000 2000 200 1000 2000 200 1000 400 200 200 200 1000 1000 1000 Remark TABLE 4H: ISOPLUS Date Code or Test # 1 CS20-22-moF1 1888 2 DHH55-36N1F 1604 3 DSEE29-06CC 1771 4 DSEP15-12CR 1514 5 DSEP25-16AR 1712 6 DSEP30-06BR 1700 7 DSEP30-06CR 2015 8 DSEP9-06CR 1437 9 DSS20-01AC 1709 10 DSSK60-015AR 1573 11 DWP25-16/18AL 1842 12 FII50-12EL 1534 13 GWM120-0075P3SL 1720 1960 14 GWM160-0055X1-SL 15 GWM70-01P2 1448 16 IXKC13N80C 1769 17 IXKC25N80C 1590 18 IXUC200N055 1802 Low Temp. [C] -55 -55 -55 -55 -40 -55 -55 -55 -55 -55 -55 -55 -55 -55 -55 -55 -55 -55 High Temp. [C] 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Number of Cycles 50 100 100 50 50 50 50 50 100 50 100 100 1000 1000 1000 100 100 90 Sample Size 30 40 20 20 20 20 20 20 20 20 22 20 80 80 10 20 20 50 Failures Device Cycles 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1500 4000 2000 1000 1000 1000 1000 1000 2000 1000 2200 2000 80000 80000 10000 2000 2000 4500 TABLE 4J: Breakover Diode Date Code # Part Number or Test # 1 IXBOD1-08 1941 2 IXBOD1-09 1800 3 IXBOD1-10 1576 4 IXBOD1-10 2096 Low Temp. [C] -40 -40 -40 -40 High Temp. [C] 150 150 150 150 Number of Cycles 50 50 50 50 Sample Size 20 20 20 20 Failures Device Cycles 0 0 0 0 1000 1000 1000 1000 # Part Number IXYS Semiconductor GmbH 19 Remark Remark HUMIDITY TEST (Tables 5A, 5H..5J) TABLE 5A: MOSFET/IGBT single device Date Code # Part Number or Temp. Test # [C] 1 IXDD404SIA 1695 121 2 IXKH24N60C5 2066 121 3 IXKP13N60C5M 1716 85 4 IXKP13N60C5M 1687 121 Rel. H. [%] 100 100 85 100 Time [hrs] 96 48 1000 96 Sample Size 30 20 20 10 Failures 0 0 0 0 Device Hours [hrs] 2880 960 20000 960 Remark Device Hours [hrs] 1920 768 1920 960 960 960 1920 1680 Remark Device Hours [hrs] 1920 20000 1920 1920 20000 1920 1920 7392 7392 Remark TABLE 5E: FRED Date Code or Test # 1908 1446 1607 1535 1536 1927 1837 1742 Temp. [C] 121 121 121 121 121 121 121 85 Rel. H. [%] 100 100 100 100 100 100 100 85 Time [hrs] 96 96 96 48 48 48 96 168 Sample Size 20 8 20 20 20 20 20 10 Failures Date Code or Test # 1907 1835 1835 1974 1836 1836 1622 1492 1723 Temp. [C] 121 85 121 121 85 121 121 121 121 Rel. H. [%] 100 85 100 100 85 100 100 100 100 Time [hrs] 96 1000 96 96 1000 96 96 96 96 Sample Size 20 20 20 20 20 20 20 77 77 Failures TABLE 5G: Thyristor/Diode single device Date Code # Part Number or Temp. Test # [C] 1 CS45-12io1 1754 121 2 DSDI60-14A 1806 121 3 DSI45-16A 1976 121 Rel. H. [%] 100 100 100 Time [hrs] 48 48 96 Sample Size 20 20 20 Failures # Part Number 1 2 3 4 5 6 7 8 DPG20C300PN DPG60C400QB DSEI2x61-12B DSEI8-06AS DSEP30-06BR DSEP30-12CR DSEP8-03AS MEO450-12DA 0 0 0 0 0 0 0 0 TABLE 5F: Schottky Diode # Part Number 1 2 3 4 5 6 7 8 9 DSA120C150QB DSA20C100PB DSA20C100PB DSA20C60PN DSA90C200HB DSA90C200HB DSB15IM45IB DSS31-0045A SN DSS6-015AS 0 0 0 0 0 1 0 0 0 0 0 0 I_R increased Device Hours [hrs] 960 960 1920 Remark Device Hours [hrs] 960 960 Remark Device Hours [hrs] 960 960 960 960 Remark TABLE 5H: ISOPLUS Date Code or Test # 1536 1927 Temp. [C] 121 121 Rel. H. [%] 100 100 Time [hrs] 48 48 Sample Size 20 20 Failures TABLE 5J: Breakover diode Date Code # Part Number or Test # 1 IXBOD1-08 1941 2 IXBOD1-09 1800 3 IXBOD1-10 1576 4 IXBOD1-10 2096 Temp. [C] 121 121 121 121 Rel. H. [%] 100 100 100 100 Time [hrs] 48 48 48 48 Sample Size 20 20 20 20 Failures # Part Number 1 2 DSEP30-06BR DSEP30-12CR IXYS Semiconductor GmbH 20 0 0 0 0 0 0