DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
NPN SILICON RF TRANSISTOR
NE68030 / 2SC4228
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN SUPER MINIMOLD
The mark shows major revised points.
Document No. PU10452EJ01V0DS (1st edition)
(Previous No. P10372EJ2V0DS00)
Date Published December 2003 CP(K)
DESCRIPTION
The NE68030 / 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin
super minimold package.
FEATURES
• Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• High gain : S21e2 = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• 3-pin super minimold package
ORDERING INFORMATION
Part Number Quantity Supplying Form
NE68030-A
2SC4228-A
50 pcs (Non reel) • 8 mm wide embossed taping
NE68030-T1-A
2SC4228-T1-A
3 kpcs/reel
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC35 mA
Total Power Dissipation Ptot Note 150 mW
Junction Temperature Tj150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air
JEITA
Part No.
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Data Sheet PU10452EJ01V0DS
2
NE68030 / 2SC4228
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA − − 1.0
μ
A
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 1.0
μ
A
h niaG tnerruC CD FE Note 1 VCE = 3 V, IC 052 001 05 Am 5 = −
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 8.0 – GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 7.5 − dB
V FN erugiF esioN CE = 3 V, IC = 5 mA, f = 2 GHz − 1.9 3.2 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz − 0.3 0.7 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank R43 R44 R45
Marking R43 R44 R45
hFE Value 50 to 100 80 to 160 125 to 250
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Data Sheet PU10452EJ01V0DS 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
10
5
15
20
15.00
40 A
μ
60 A
μ
80 A
μ
100 A
μ
120 A
μ
140 A
μ
160 A
μ
I
B
= 20 A
μ
V
CE
= 3 V
200
50
100
10
20
1 5 10 055.0
DC Current Gain h
FE
Collector Current I
C
(mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
10
8
6
4
2
05 10 0515.0
250
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
5
0.2
0.5
1
2
0.1 21 5 10 20 50
f = 1 MHz
V
CE
= 3 V
20
10
0 0.5 1
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
NE68030 / 2SC4228
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Data Sheet PU10452EJ01V0DS
4
V
CE
= 3 V
I
C
= 5 mA
Frequency f (GHz)
INSERTION POWER GAIN
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
25
20
15
10
5
0
0.1 0.2 0.5 1 2 5
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
12
8
0
4
0.5 5 10 051
5
0
4
3
2
1
0.5 1 5 10 50
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
V
CE
= 3 V
f = 2 GHz
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
NE68030 / 2SC4228
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Data Sheet PU10452EJ01V0DS 5
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.3
0.15+0.1
–0.05
0 to 0.1
Marking
2.0±0.2
0.65 0.65
0.3+0.1
–0
0.3+0.1
–0
1
2
3
2.1±0.1
1.25±0.1
1. Emitter
2. Base
3. Collector
(EIAJ : SC-70)
PIN CONNECTIONS
NE68030 / 2SC4228
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