Switching and General Purpose Transistors 2N9 16 (siicon) Vero = 25 V (JAN2N916 AVAILABLE) r= 50 f; = 300 MHzmin Collector connected to case CASE 22 NPN silicon annular transistor for high-frequency (10-18) amplifier, oscillator and switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vop 45 Vde Collector-Emitter Voltage Voro 25 Vde Emitter-Base Voltage Ves 5 Vde Total Device Dissipation Pb @ 25C Case Temperature 1.2 Ww Derating Factor Above 25C 6.9 mW/C Total Device Dissipation Ph @ 25C Ambient Temperature . 36 Ww Derating Factor Above 25C 2,06 mw/C Junction Temperature, Operating Ty +200 C Storage Temperature Range Tete -65 to +300 C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector Cutoff Current I 10 nAdc 1, =0 V., = 30V CBO E CB Collector Cutoff Current @150 C lopo 10 Ade I=0 Vv = 30V E CB Collector Breakdown Voltage BVcno 45 Volts I, =10uA 1, = 0 Collector to Emitter Sustaining Voltage *VoKO 25 Volts I, =30mA [,=0 Cc B Emitter Breakdown Voltage BVERO 5.0 Volts 1, =0 IL, =10pA Cc E Base Saturation Voltage Vv 0.9 Volts Ip =10mA I, =1.0mA BE(sat) B Collector Saturation Voltage Vv 0.5 Volts I, =10mA I, = 1.0mA CE(sat) Cc B DC Pulse Current Gain *hor 50 200 Ig = 10mA Vor =1.0V Output Capacitance Cop 6.0 pF In =0 Voz =5.0V Emitter Transition Capacitance Cop 10 pF L,=0 Vv =0,5V C EB High Frequency Current Gain f = 100 MHz he 3.0 _ In = 10mA Veg = 15V Small Signal Current Gain f = 1 kHz hee 40 200 I, =1.0mA Vor =5.0V 50 950 To =5.0mA Vor =5,0V Input Resistance f = 1kHz he 6000 ohms In 21.0mA Vor =5.0V In = 5.0mA Vor =5.0V 2000 ohms Output Conductance f = 1 kHz Noe 15 pmho 1, = 1.0mA Vog = 5-0 : I, =5.0mA Vor = 5,0V 12 umho *pw = 300us duty cycle <1% 8-71