LM26480SQ-AA/S7002404 - TEXAS INSTRUMENTS

1. Product profile

1.1 General description

100 W LDMOS power transistor for base station applications at frequencies from

2500 MHz to 2700 MHz.

[1] 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is

3.84 MHz.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low Rth providing excellent thermal stability

Designed for broadband operation (2500 MHz to 2700 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances

(RoHS)

1.3 Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2500 MHz to 2700 MHz frequency range

BLF8G27LS-100P

Power LDMOS transistor

Rev. 2 — 20 December 2012 Objective data sheet

Table 1. Typical performance

Typical RF performanc e at Tcase = 25



C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) GpDACPR5M

(MHz) (mA) (V) (W) (dB) (%) (dBc)

Single carrier W-CDMA 2500 to 2700 860 28 25 17.5 29 35[1]

Objective data sheet Rev. 2 — 20 December 2012 2 of 8

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain1

2drain2

3gate1

4gate2

5source [1]

2sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLF8G27LS-100P - earless flanged ceramic package; 4 leads SOT1121B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

Tstg storage temperature 65 +150 C

Tjjunction temperature - 225 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resist ance from junction to case Tcase =80C; PL= <tbd> W <tbd> K/W

Objective data sheet Rev. 2 — 20 December 2012 3 of 8

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF8G27LS-100P is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;

IDq =860mA; P

L= 100 W (CW); f = 2500 MHz.

Table 6. DC characteristics

Tj = 25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 0.6 mA 65 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 60 mA 1.5 <tbd> 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V--<tbd>A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V -<tbd>-A

IGSS gate leakage current VGS =11 V; V

DS = 0 V - - <tbd> nA

gfs forward transconductance VDS =10V; I

D= 6 0 mA - <tbd> - S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID= 210 0 mA -<tbd>-

Table 7. RF characteristics

Test signal: single carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 %

probability on CCDF; channel bandwidth is 3.84 MHz; f1=2500MHz; f

2= 2700 MHz;

RF performance at VDS =28V; I

Dq =860mA; T

case =25



C; 2 sections combined unless otherwise

specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain PL(AV) = 25 W <tbd> 17.5 - dB

RLin input return loss PL(AV) =25W - 10 <tbd> dB

Ddrain efficiency PL(AV) = 25 W <tbd> 29 - %

ACPR5M adjacent channel power ratio (5 MHz) PL(AV) =25W - 35 <tbd> dBc

Objective data sheet Rev. 2 — 20 December 2012 4 of 8

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

8. Package outline

Fig 1. Package outline SOT1121B

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOT1121B

sot1121b_po

09-12-14

12-06-07

Unit(1)

mm max

nom

min

4.75

3.45

3.94

3.68

0.18

0.08

20.02

19.61

19.96

19.66

9.53

9.27

1.14

0.89

19.94

18.92

9.91

9.65

Dimensions

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. dimension is measured 0.030 inch (0.76 mm) from the body.

Earless flanged ceramic package; 4 leads SOT1121B

bcDD

1EE

9.53

9.27

FHH

12.83

12.57

1.70

1.45

20.70

20.45

inches max

nom

min

0.187

0.136

0.155

0.145

0.007

0.003

8.89

0.35

0.788

0.772

0.786

0.774

0.375

0.365

0.045

0.035

0.785

0.745

0.39

0.38

0.375

0.365

0.505

0.495

0.067

0.057

0.815

0.805

0.25

0.01

0.51

0.02

w2w3

0.25

0.01

0 5 10 mm

scale

D1D

Dw2

Objective data sheet Rev. 2 — 20 December 2012 5 of 8

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 8. Abbreviations

Acronym Description

3GPP 3rd Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical CHannel

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal Oxide Semiconductor

PAR Peak-to-Average Ratio

VSWR Voltage Standing Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF8G27LS-100P v.2 20121220 Objective data sheet - BLF8G27LS-100P v.1

Modifications: •Table 1 on page 1: table has been up dated.

•Table 7 on page 3: table has been up dated.

BLF8G27LS-100P v.1 20121203 Objective data sheet - -

Objective data sheet Rev. 2 — 20 December 2012 6 of 8

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

12. Legal information

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Objective data sheet Rev. 2 — 20 December 2012 7 of 8

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

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13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLF8G27LS-100P

Power LDMOS transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 December 2012

Document identifier: BLF8G27LS-100P

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Handling information . . . . . . . . . . . . . . . . . . . . . 5

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 5

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 7

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8