BCW 65, BCW 66 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN NPN Power dissipation - Verlustleistung Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Mae in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCW 65 BCW 66 Collector-Emitter-voltage B open VCE0 32 V 45 V Collector-Base-voltage E open VCB0 60 V 75 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (DC) IC 800 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1000 mA Base current - Basis-Spitzenstrom IB 100 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. ICB0 - - 20 nA ICB0 - - 20 :A ICB0 - - 20 nA ICB0 - - 20 :A IEB0 - - 20 nA Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB = 45 V IE = 0, VCB = 45 V, Tj = 150/C BCW 65 BCW 66 Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 4 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 42 01.11.2003 General Purpose Transistors BCW 65, BCW 66 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. - Kollektor-Sattigungsspg. 1) IC = 100 mA, IB = 10 mA VCEsat - - 300 mV IC = 500 mA, IB = 50 mA VCEsat - - 700 mV Base saturation voltage - Basis-Sattigungsspannung 1) IC = 100 mA, IB = 10 mA VBEsat - - 1.25 V IC = 500 mA, IB = 50 mA VBEsat - - 2V DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 10 V, IC = 100 :A VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 100 mA VCE = 2 V, IC = 500 mA BCW 65A / 66F hFE 35 - - BCW 65B / 66G hFE 50 - - BCW 65C / 66H hFE 80 - - BCW 65A / 66F hFE 75 - - BCW 65B / 66G hFE 110 - - BCW 65C / 66H hFE 180 - - BCW 65A / 66F hFE 100 160 250 BCW 65B / 66G hFE 160 250 400 BCW 65C / 66H hFE 250 350 630 BCW 65A / 66F hFE - 35 - BCW 65B / 66G hFE - 60 - BCW 65C / 66H hFE - 100 - fT - 170 MHz - - 6 pF - - 60 pF - Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 420 K/W 2) RthA BCW 67, BCW 68 BCW 65A = EA BCW 65B = EB BCW 65C = EC BCW 66F = EF BCW 66G = EG BCW 66H = EH ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 43