SGA4563Z SGA4563ZDC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. GaAs HBT 0 Gain (dB) 24 -10 ORL 16 -20 IRL 8 SiGe HBT -30 Return Loss (dB) VD= 3.5 V, ID= 45 mA (Typ.) GAIN GaAs MESFET Si BiCMOS Gain & Return Loss vs. Frequency 32 SiGe BiCMOS High Gain: 20.2dB at 1950MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching(R) Applied InGaP HBT PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite GaAs pHEMT 0 Si CMOS -40 0 Si BJT 1 2 3 4 Frequency (GHz) 5 6 GaN HEMT RF MEMS Parameter Small Signal Gain Output Power at 1dB Compression Output Third Intercept Point Min. Specification Typ. 25.6 20.2 18.6 15.0 12.8 27.1 26.2 2500 Max. Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 19.9 dB 1950MHz Output Return Loss 10.1 dB 1950MHz Noise Figure 2.4 dB 1950MHz Device Operating Voltage 3.6 V Device Operating Current 41 45 49 mA Thermal Resistance 255 C/W (Junction - Lead) Test Conditions: VS =8V, ID =45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS =100, TL =25C, ZS =ZL =50 RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA4563Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 90 Max Device Voltage (VD) 6 V Max RF Input Power +18 dBm Max Junction Temp (TJ) +150 C -40 to +85 C +150 C Operating Temp Range (TL) Max Storage Temp Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2400 MHz 3500 MHz 18.6 25.3 11.6 16.5 9.3 23.0 15.3 Small Signal Gain dB 28.7 27.4 25.6 20.2 Output Third Order Intercept Point dBm 27.0 26.2 27.1 26.2 Output Power at 1dB Compression dBm 15.7 15.0 15.0 12.8 Input Return Loss dB 19.2 20.7 24.5 19.9 Output Return Loss dB 20.0 17.7 15.0 10.1 Reverse Isolation dB 30.5 29.7 28.7 24.5 Noise Figure dB 1.9 1.9 1.9 2.4 Test Conditions: VS =8V, ID =45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=100, TL =25C, ZS =ZL =50 OIP3 vs. Frequency P1dB vs. Frequency VD=3.2 V, ID= 45 mA (Typ.) VD= 3.2 V, ID= 45 mA (Typ.) 35 18 TL 15 P1dB (dBm) 30 OIP3 (dBm) 12.4 9.3 19.9 25 12 20 9 TL=+25C TL=+25C 15 6 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Noise Figure vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) Noise Figure (dB) 5 4 TL=+25C 3 2 1 TL=+25C 0 0 2 of 6 0.5 1 1.5 2 Frequency (GHz) 2.5 3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111011 SGA4563Z Typical RF Performance Over Temperature ( Bias: VD= 3.5 V, ID= 45 mA (Typ.) |S | vs. Frequency |S | vs. Frequency 21 32 -10 S11 (dB) S21(dB) 11 0 24 16 8 0 0 1 2 3 Frequency (GHz) 4 -20 -30 +25C -40C +85C TL +25C -40C +85C TL -40 5 0 1 2 3 Frequency (GHz) |S | vs. Frequency 4 5 |S | vs. Frequency 12 -10 22 0 -10 S11(dB) -15 S12(dB) ) -20 -20 -30 -25 +25C -40C +85C TL -30 0 DS111011 1 2 3 Frequency (GHz) 4 +25C -40C +85C TL -40 5 0 1 2 3 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 4 5 3 of 6 SGA4563Z Pin 3 1, 2, 4, 5 6 Function RF IN GND RF OUT/BIAS Description RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper operation. SOT-363 PCB Pad Layout Preliminary Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. SOT-363 Nominal Package Dimensions 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111011 SGA4563Z Application Schematic Frequency (Mhz) VS R BIAS 1 uF 1000 pF CD LC 3 RF in CB 1,2 SGA4563Z 4,5 6 RF out CB Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID=45mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) 6V RBIAS 51 8V 100 10 V 150 12 V 180 Note: RBIAS provides DC bias stability over temperature. Evaluation Board Layout Mounting Instructions: 1. Use a large droung pad area near device pins 1, 2, 4, and 5 with plated through-holes as shown. 2. We recommend 1 or 2 ounces copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA4563Z Part Identification Marking 6 5 4 1 2 3 Ordering Information Ordering Code 6 of 6 Description SGA4563Z 7" Reel with 3000 pieces SGA4563ZSQ Sample bag with 25 pieces SGA4563ZSR 7" Reel with 100 pieces SGA4563ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111011