Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGA4563Z
DC to 2500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
0
8
16
24
32
0123456
Frequency (GHz)
Gain (dB)
-40
-30
-20
-10
0
Return Loss (dB)
GAIN
IRL
ORL
Gain & Return Loss vs. Frequency
V
D
= 3.5 V, I
D
= 45 mA (Typ.)
High Gain: 20.2dB at
1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS111011
Package: SOT-363
SGA4563ZDC
to 2500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 25.6 dB 850MHz
20.2 dB 1950MHz
18.6 dB 2400MHz
Output Power at 1dB Compression 15.0 dBm 850MHz
12.8 dBm 1950MHz
Output Third Intercept Point 27.1 dBm 850MHz
26.2 dBm 1950MHz
Bandwidth Determined by Return
Loss 2500 MHz >10dB
Input Return Loss 19.9 dB 1950MHz
Output Return Loss 10.1 dB 1950MHz
Noise Figure 2.4 dB 1950MHz
Device Operating Voltage 3.6 V
Device Operating Current 41 45 49 mA
Thermal Resistance
(Junction - Lead) 255 °C/W
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=100, TL=25°C, ZS=ZL=50
2 of 6 DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA4563Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter Rating Unit
Max Device Current (ID)90mA
Max Device Voltage (VD)6V
Max RF Input Power +18 dBm
Max Junction Temp (TJ)+150°C
Operating Temp Range (TL) -40 to +85 °C
Max Storage Temp +150 °C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
Parameter Unit 100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain dB 28.7 27.4 25.6 20.2 18.6 15.3
Output Third Order Intercept Point dBm 27.0 26.2 27.1 26.2 25.3
Output Power at 1dB Compression dBm 15.7 15.0 15.0 12.8 11.6
Input Return Loss dB 19.2 20.7 24.5 19.9 16.5 12.4
Output Return Loss dB 20.0 17.7 15.0 10.1 9.3 9.3
Reverse Isolation dB 30.5 29.7 28.7 24.5 23.0 19.9
Noise Figure dB 1.9 1.9 1.9 2.4
Test Conditions: VS=8V, ID=45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=100, TL=25°C, ZS=ZL=50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
TL=+25ºC
0
1
2
3
4
5
00.511.522.53
Frequency (GHz)
Noise Figure (dB)
TL=+25ºC
Noise Figure vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
TL
15
20
25
30
35
00.511.522.53
Frequency (GHz)
OIP3 (dBm)
6
9
12
15
18
00.511.522.53
Frequency (GHz)
P1dB (dBm)
TL=+25ºC TL=+25ºC
OIP
3
vs. Frequency
VD=3.2 V, ID= 45 mA (Typ.)
P
1dB
vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
3 of 6DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA4563Z
0
8
16
24
32
012345
Frequency (GHz)
S
21
(dB)
+25°C
-40°C
+85°C
T
L
-40
-30
-20
-10
0
012345
Fr equency (GHz )
S
11
(dB)
+25°C
-40°C
+85°C
-30
-25
-20
-15
-10
012345
Fr equency (GH z )
S
12
(dB)
+25°C
-40°C
+85°C
-40
-30
-20
-10
0
012345
Frequency (G Hz)
S
11
(dB)
+25°C
-40°C
+85°C
T
L
T
L
T
L
|
S
11
|
vs. Frequency
|
S
21
|
vs. Frequency
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
Typical RF Performance Over Temperature ( Bias: VD= 3.5 V, ID= 45 mA (Typ.) )
4 of 6 DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA4563Z
SOT-363 PCB Pad Layout
SOT-363 Nominal Package Dimensions
Pin Function Description
3RF IN
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
1, 2,
4, 5
GND Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead
inductance.
6RF OUT/BIAS
RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper opera-
tion.
Preliminary
Dimensions in inches [millimeters]
RF
OUT
RF
I N
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
5 of 6DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA4563Z
Application Schematic
Evaluation Board Layout
Mounting Instructions:
1. Use a large droung pad area near device pins 1, 2, 4, and 5 with plated through-holes as shown.
2. We recommend 1 or 2 ounces copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
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CB
CB
CD
VS
RBIAS
LC
3
4,5
6
1,2
1000
pF
SGA4563Z
6 of 6 DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA4563Z
Part Identification Marking
Ordering Information
Ordering Code Description
SGA4563Z 7” Reel with 3000 pieces
SGA4563ZSQ Sample bag with 25 pieces
SGA4563ZSR 7” Reel with 100 pieces
SGA4563ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag
1 2 3
6 5 4
