- aaa - IRFR9024/20 P-CHANNEL IRFU9024/20 POWER MOSFETS FEATURES Lower Ros(on) Improved inductive ruggedness Fast switching times - Rugged polysilicon gate cell structure Lower input capacitance + Extended safe operating area + Improved high temperature reliability 1.Gate 2.Drain 3.Source IRFR9024/9020 I-PAK PRODUCT SUMMARY Part Number Vos Rps(on) lo IRFR9024/U9024 -60V 0.280 -9.9A 1 IRFR9020/U9020 -50V 0.28.9 -9.9A 1.Gate 2.Drain 3.Source IRFU9024/9020 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFR9024/U9024 IRFR9020/U9020 Unit Drain-Source Voltage (1) Vpss -60 -50V Vde Drain-Gate Voltage (Ras=1.0M2)(1) VoGR -60 -50 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25 C iT) -9.9 Adc Continuous Drain Current Tc=100 C Ib -6.3 Adc Drain Current - Pulsed (3) lom -35 Adc Gate Current - Pulsed Iam +15 Adc Single Pulsed Avalanche Energy (4) Eas 440 mJ Avalanche Current las -9.9 A Total Power Dissipation at Tc=25 C p 42 Watts D Derate above 25 C 0.30 w/c Operating and Storage pe g 9 Ts, Tstg ~55 to +150 C Junction Temperature Range Maximum Lead Temp. for Soldering TL 300 C | Purposes, 1/8" from case for 5 seconds Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width <300ss, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature (4) L=5.1mH, Vaa=-25V, Re=250,, Starting Ts=25C a 137 www.DataSheet.in IRFR9024/20 P-CHANNEL IRFU9024/20 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVoss | Drain-Source Breakdown Voltage IRFR9024/IRFU9024 -60| - - V_ | Vas=0V, Ip=-2502A IRFR9020/IRFUS020 0} - - V Vesth) | Gate Threshold Voltage -2.0| - -4.0 | V_ | Vps=Vas, Ip=-2500A Iass_| Gate-Source Leakage Forward - - | -100] nA | Vas=-20V Iass_| Gate-Source Leakage Reverse - - 100 | nA | Ves=20V Ioss_ | Zero Gate Voltage Drain Current - - 250 | A | Vps=-Max. Rating, Ves=0V - - | 1000} #A | Vos=-0.8 Max. Rating, Vas=0V, Tc=125C Rosion) | Static Drain-Source On - - | 028) Q | Vas=-10V, ln=-5.0A Resistance(2) gts Forward Transconductance (2) 2.3 - - Us| Vos>-50V, lo=-5.0A Ciss Input Capacitance - | 650 - pF | Vas=0V Coss | Output Capacitance - | 220 - pF | Vps=-25V Crss_| Reverse Transfer Capacitance - 110 - pF | f=t.0MHz taon) | Turn-On Delay Time - | 15.4 - ns | Vop=-0.5 BVpss, lp=-9.9A, Zo=18 2 tr Rise Time - 1254) - ns_| (MOSFET switching times are essentially tat} | Turn-Off Delay Time - | 205) - ns _| independent of operating temperature) tt Fall Time - | 484 - ns Qg Total Gate Charge - : 29 | nC | Ves=-10V, ip=-9.9A, Vos=-0.8 Max. Rating, (Gate-Source Pluse Gate-Drain) (Gate charge is essentially independent of Qgs Gate-Source Charge - 7.5 - nC | operating temperature) Qoa Gate-Drain ("Miller") Charge - 9.5 - nc THERMAL RESISTANCE Symbol Characteristics All Units Remark Rthuc | Junction-to-Case MAX 3.0 KW Rincs | Case-to-Sink TYP V7 K/W | Mounting surface flat, smooth and greased Rthua Junction-to-Ambient MAX 110 KW | Free Air Operation Notes : (1) T=25C to 150C (2) Pulse test : Pulse width <300xs, Duty Cycle< 2% (3) Repetitive rating : Pulse width limited by max. junction temperature 138 www.DataSheet.in IRFR9024/20 P-CHANNEL | IRFU9024/20 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions i tt Is Continuous Source Curren : _ 99 A | Modified MOSFET ; (Body Diode) symbol showing the & Pulse Source Current integral reverse S S$ IsM - - {| -85 | A | P-N junction rectifier (Body Diode) (3) Vsp | Diode Forward Voltage - - | -63] Vj TJ=25C, Is=-9.9A, Vas=0V tr Reverse Recovery Time - - 280 | ns | Tu=25C, IF=-9.9A, diF/dt=100A/2S Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width <300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature BOps Test a =~ w -+Vog=7V a w oc a we = = $s = b a B x ia ec c 2 5 z a a z & = 5 5 2 5 = =15 = = 30 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOUACE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics 10? 80us Pulse Test 5 IS LIMITED BY Vas= 71 vase BY I ~ 7 a wo WwW ty a Cc WwW 2 3 = = = E 5 z Zz -5 Ww c ec a g 3 z z < < oc -1 c a a 3 hTcs28C 6 og u=150C SINGLE PULSE =-4V O41 = - = -4 =5 -14 -5 -10 -5 10? - 10 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Sate Operating Area 139 www.DataSheet.in IRFR9024/20 P-CHANNEL IRFU9024/20 POWER MOSFETS 0.2 2 Po 1. Duty Factor, Date t he 2. Per Unit Base=Ryuc 1.0 Deg. C/W. 3. TxeTo=Pou Zac It). ZtnicttWAinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL tMPEDANCE (PER UNIT) 1 2 5 2 5 14 2 11. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration 5 . 5 10 y= 55C 2 o Grs, TRANSCOUNDUCTANCE (SIEMENS) a lor, REVERSE DRAIN CURRENT (AMPERES) 80yus Pulse Test =4 = =1 20 Ip, DRAIN CURRENT (AMPERES) Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typicat SourceDrain Diode Forward Voltage a 2 Rosion), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) BVoss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0. _ 0 40 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature 140 www.DataSheet.in IRFR9024/20 P-CHANNEL IRFU9024/20 POWER MOSFETS Ves=OV. f= 1MHz Css=Cgs+Cgd, Cds Shored Ciss=Cad | | Cgs Cdg Cgs+Cgd 5CastCgd Cuss= Cds + , CAPACITANCE (pF) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) aura 1 Q 6 12 18 24 30 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) , Qy, TOTAL GATE CHARGE {nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-to-Source Voltage 80us Pulse Test Ee OEE lo, DRAIN CURRENT (AMPERES) Ros ion, DRAIN-TO-SOURCE ON RESISTANCE (OHMS) ! Ip, ORAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) : Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature 48 N Fr 36 a = z ~M\-- +4 9 Ee . = S24 - @ a Cc po ee --- +--- AQ Ww = 6 a s ! ~ a 0 20. 4640.~CGO:<C:<ii SCPC Te, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve www.DataSheet.in