RHF43B Rad-hard precision bipolar single operational amplifier Features Rail-to-rail output 8 MHz gain bandwidth at 16 V Ceramic Flat-8 High radiation immunity: 300 kRad TID at high/low dose rate (ELDRS-free), tested immunity of SEL /SEU at 125 C under 120 MeV/mg/cm LET ions, 14 V supply 1 8 NC IN - NC +VCC VCC IN + OUT NC -VCC VDD Low input offset voltage: 100 V typ 4 Supply current: 2.2 mA typ Operating from 3 to 16 V Input bias current: 30 nA typ ESD internal protection 2 kV Latch-up immunity: 200 mA QML-V RHA, ELDRS-free qualified under smd 5962-06237 5 The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package. Applications Space probes and satellites Defense systems Scientific instrumentation Nuclear systems Description The RHF43B is a precision bipolar operational amplifier available in a ceramic 8-pin flat package and in die form. ln addition to its low offset voltage, rail-to-rail feature and wide supply voltage, the RHF43B is designed for increased tolerance to radiation. Its intrinsic ELDRS-free rad-hard design allows this product to be used in space applications and in applications operating in harsh environments. July 2011 Doc ID 13477 Rev 8 1/16 www.st.com 16 Absolute maximum ratings and operating conditions 1 RHF43B Absolute maximum ratings and operating conditions Table 1. Absolute maximum ratings (AMR) Symbol Parameter VCC Supply voltage(1) Vid Differential input voltage (2) (3) Vin Input voltage range IIN Input current Tstg Unit 18 9 V 1.2 V VDD-0.3 to 16 V 45 mA -65 to +150 C Thermal resistance junction to ambient(4)(5) 125 C/W Rthjc Thermal resistance junction to case(4)(5) 40 C/W Tj Maximum junction temperature 150 C 2 kV Latch-up immunity 200 mA Lead temperature (soldering, 10 sec) 260 C Low dose rate of 0.01 rad.sec-1 (up to Vcc = 16 V) 300 kRad High dose rate of 50-300 rad.sec-1 (up to Vcc = 16 V) 300 kRad Heavy ion latch-up (SEL) immune with heavy ions (up to Vcc = 14 V) 120 MeV.cm2/mg Rthja ESD Storage temperature Value HBM: human body model(6) Radiation related parameters Dose HI 1. All values, except differential voltage are with respect to network terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of input and output terminal must never exceed VCC + 0.3 V. 4. Short-circuits can cause excessive heating and destructive dissipation. 5. Rth are typical values. 6. Human body model: 100 pF discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin combinations with other pins floating. Table 2. Operating conditions Symbol 2/16 Parameter Value Unit 3 to 16 V VCC Supply voltage Vicm Common mode input voltage range VDD to VCC V Toper Operating free air temperature range -55 to +125 C Doc ID 13477 Rev 8 RHF43B Electrical characteristics 2 Electrical characteristics Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2 (unless otherwise specified) Symbol Parameter Test conditions Ambient temp. Min. Typ. Max. Unit DC performance +125C ICC Supply current No load 2.9 +25C 2.5 -55C Vio DVio Iib DIib Iio Offset voltage Vicm = VCC/2 Input offset voltage drift Input bias current Input offset current temperature drift Input offset current Vicm = VCC/2 Vicm = VCC/2 Differential input resistance between in+ and inRin Cin CMR SVR A VD mA 2.9 +125C -500 +25C -300 -55C -500 - Vicm = VCC/2 2.9 500 100 300 500 V/C 1 +125C -100 +25C -60 -55C -100 - 100 30 60 -35 +25C -15 -55C -35 +25C nA 100 100 +125C V pA/C 35 1 15 nA 35 0.16 M Input resistance between in+ (or in-) and GND +25C 2000 Differential input capacitance between in+ and in- +25C 8 Input capacitance between in+ (or in-) and GND +25C 2 pF Common mode rejection ratio Supply rejection ratio Large signal voltage gain 0 < Vicm < 16 V 3 V < VCC <16 V Vicm = VCC/2 Vout= 0.5 V to 15.5 V RL = 1 k 0 < Vicm < 16 V Doc ID 13477 Rev 8 +125C 72 +25C 72 -55C 72 +125C 80 +25C 90 -55C 80 +125C 60 +25C 74 -55C 60 110 dB 120 dB 85 dB 3/16 Electrical characteristics Table 3. RHF43B 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2 (unless otherwise specified) (continued) Symbol Parameter Test conditions RL = 1 k VOH Ambient temp. Min. +125C 15.6 +25C 15.7 -55C 15.6 +125C 15.8 +25C 15.9 -55C 15.8 Typ. V 15.96 +125C RL = 1 k 0.3 +25C 0.1 0.2 -55C 0.3 +125C 0.1 V Low level output voltage RL = 10 k +25C 0.04 -55C Output sink current Unit 15.8 High level output voltage RL = 10 k VOL Max. Vout = VCC Iout 0.06 0.1 +125C 15 +25C 20 -55C 15 +125C 10 +25C 15 -55C 10 +125C 3.5 +25C 6 -55C 3.5 30 mA Output source current Vout = VCC 25 AC performance GBP Gain bandwidth product F = 100 kHz RL= 1 k, CL= 100 pF 8 MHz Fu Unity gain frequency RL= 1 k, CL= 100 pF +25C 5 MHz m Phase margin Gain = +5 RL= 1 k, CL= 100 pF +25C 50 Degrees 3 V/s SR RL= 1 k, CL= 100 pF 1.7 +25C 2 -55C 1.7 en Equivalent input noise voltage F = 1 kHz +25C 7.5 nV -----------Hz in Equivalent input noise current F = 1 kHz +25C 1 -----------Hz +25C 0.01 % THD+en 4/16 Slew rate +125C Total harmonic distortion Vout = (VCC-1 V)/5 Gain = -5.1 Vicm = VCC/2 Doc ID 13477 Rev 8 pA RHF43B Table 4. Electrical characteristics 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2 (unless otherwise specified) Symbol Parameter Test conditions Ambient temp. Min. Typ. Max. Unit DC performance +125C ICC Supply current No load 2.6 +25C 2.2 -55C Vio DVio Iib DIib Iio Offset voltage Input offset voltage drift Input bias current Input offset current temperature drift VCC = +4 V Vicm = VCC/2 Input offset current VCC = +4 V Vicm = VCC/2 Differential input resistance between in+ and inRin Cin CMR A VD mA 2.6 +125C -500 +25C -300 -55C -500 VCC = +4 V Vicm = VCC/2 2.6 500 100 300 500 V/C 1 +125C -100 +25C -60 -55C -100 - 100 30 60 -35 +25C -15 -55C -35 +25C nA 100 100 +125C V pA/C 35 1 15 nA 35 0.16 M Input resistance between in+ (or in-) and GND +25C 2000 Differential input capacitance between in+ and in- +25C 8 Input capacitance between in+ (or in-) and GND +25C 2 pF Common mode rejection ratio Large signal voltage gain 0 < Vicm < 3 V Vout= 0.5 V to 2.5 V RL = 1 k 0 < Vicm < 3 V Doc ID 13477 Rev 8 +125C 72 +25C 72 -55C 72 +125C 60 +25C 74 -55C 60 90 dB 85 dB 5/16 Electrical characteristics Table 4. RHF43B 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2 (unless otherwise specified) (continued) Symbol Parameter Test conditions RL = 1 k VOH Ambient temp. Min. +125C 2.8 +25C 2.9 -55C 2.8 +125C 2.9 +25C 2.94 -55C 2.9 Typ. V 2.98 +125C RL = 1 k 0.2 +25C 0.05 0.1 -55C 0.2 +125C 0.1 V Low level output voltage RL = 10 k +25C 0.02 -55C Output sink current Unit 2.95 High level output voltage RL = 10 k VOL Max. Vout = VCC Iout 0.06 0.1 +125C 15 +25C 20 -55C 15 +125C 10 +25C 15 -55C 10 +125C 3.5 +25C 6 -55C 3.5 30 mA Output source current Vout = VCC 25 AC performance GBP Gain bandwidth product F = 100 kHz RL= 1 k, CL= 100 pF 7.5 MHz Fu Unity gain frequency RL= 1 k, CL= 100 pF +25C 5 MHz m Phase margin Gain = +5 RL= 1 k, CL= 100 pF +25C 50 Degrees 2.7 V/s SR RL= 1 k, CL= 100 pF 1.7 +25C 2 -55C 1.7 en Equivalent input noise voltage F = 1 kHz +25C 7 nV -----------Hz in Equivalent input noise current F = 1 kHz +25C 0.8 -----------Hz +25C 0.01 % THD+en 6/16 Slew rate +125C Total harmonic distortion Vout = (VCC-1 V)/5 Gain = -5.1 Vicm = VCC/2 Doc ID 13477 Rev 8 pA RHF43B Electrical characteristics Figure 1. Input offset voltage distribution Figure 2. Input bias current vs. supply voltage Figure 3. Input bias current vs. Vicm at VCC = 3 V Figure 4. Input bias current vs. Vicm at VCC = 4 V 1.0 Input bias current ( A) 0.5 0.0 -0.5 -1.0 T= +125C T= +25C -1.5 T= -55C Vcc = 4V -2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Input Common Mode Voltage (V) Figure 5. Input bias current vs. Vicm at VCC = 16 V Figure 6. Supply current vs. Vicm in follower configuration at VCC = 3 V 1.0 Input bias current ( A) 0.5 T= +125C 0.0 -0.5 T= +25C -1.0 -1.5 T= -55C Vcc = 16V -2.0 0 2 4 6 8 10 12 14 16 Input Common Mode Voltage (V) Doc ID 13477 Rev 8 7/16 Electrical characteristics RHF43B Figure 7. Supply current vs. Vicm in follower Figure 8. configuration at VCC = 16 V Figure 9. Output current vs. supply voltage at Figure 10. Output current vs. output voltage at Vicm = VCC/2 VCC = 3 V Supply current vs. supply voltage at Vicm = VCC/2 Figure 11. Output current vs. output voltage at Figure 12. Differential input voltage vs. output VCC = 16 V voltage at VCC = 3 V 8/16 Doc ID 13477 Rev 8 RHF43B Electrical characteristics Input equivalent noise density (nV/VHz) Figure 13. Differential input voltage vs. output Figure 14. Noise vs. frequency at VCC= 3 V and voltage at VCC = 16 V VCC = 16 V Figure 15. Voltage gain and phase vs. frequency at Vicm = 1.5 V Vcc=3V, Vicm=2.5V, Tamb=25C Vcc=16V, Vicm=2.5V, Tamb=25C Figure 16. Voltage gain and phase vs. frequency at Vicm = 2.5 V 50 180 50 180 40 150 40 150 120 120 30 90 90 0 0 -30 -10 -60 -20 -40 -50 4 10 5 10 6 10 30 0 0 -60 -20 -30 -120 7 -30 -10 -90 Vcc=3V, Vicm=1.5V, G= -100 Rl=1kOhms, Cl=100pF, Vrl=Vcc/2 Tamb=25C 60 10 -150 -40 -180 -50 4 10 10 Figure 17. Voltage gain and phase vs. frequency at Vicm = 0.5 V -90 Vcc=3V, Vicm=2.5V, G= -100 Rl=1kOhms, Cl=100pF, Vrl=Vcc/2 Tamb=25C 5 10 6 10 -120 -150 7 Figure 18. Voltage gain and phase vs. frequency at Vicm = 8 V 180 50 180 40 150 40 150 120 120 30 90 20 30 0 0 -30 -10 -60 -20 -40 -50 4 10 10 6 10 -120 7 10 60 10 30 0 0 -30 -10 -60 -20 -90 Vcc=3V, Vicm=0.5V, G= -100 Rl=1kOhms, Cl=100pF, Vrl=Vcc/2 Tamb=25C 5 Gain (dB) 10 -30 90 20 60 Phase () Gain (dB) -180 10 50 30 Phase () 30 Gain (dB) 10 -30 20 60 Phase () Gain (dB) 20 -30 -150 -40 -180 -50 4 10 Doc ID 13477 Rev 8 Phase () 30 -90 Vcc=16V, Vicm=0.5V, G= -100 Rl=1kOhms, Cl=100pF, Vrl=Vcc/2 Tamb=25C 5 10 6 10 -120 -150 7 -180 10 9/16 Electrical characteristics RHF43B Figure 19. Voltage gain and phase vs. frequency at Vicm = 15.5 V Figure 20. Voltage gain and phase vs. frequency at Vicm = 0.5 V 50 180 50 180 40 150 40 150 120 120 30 90 90 20 10 30 0 0 -30 -10 -60 -20 -40 -50 4 10 5 -120 6 10 30 0 0 -30 -10 -60 -20 7 10 -30 -40 -180 -50 4 10 10 -90 Vcc=16V, Vicm=0.5V, G= -100 Rl=1kOhms, Cl=100pF, Vrl=Vcc/2 Tamb=25C -150 Figure 21. Inverting large signal pulse response at VCC = 3 V, +25C 5 -120 -150 6 10 7 10 -180 10 Figure 22. Inverting Large signal pulse response at VCC = 16 V, +25C 2.0 8 1.5 6 1.0 4 Output Voltage (V)) Output Voltage (V)) 60 10 -90 Vcc=16V, Vicm=15.5V, G= -100 Rl=1kOhms, Cl=100pF, Vrl=Vcc/2 Tamb=25C -30 Gain (dB) 60 Phase () Gain (dB) 20 0.5 Vcc=3V, Vin=1Vpp G=-100 0.0 -0.5 -1.0 2 Vcc=16V, Vin=1Vpp, G= -100 0 -2 -4 -6 -1.5 -8 -2.0 -0.5 0.0 10/16 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -1.0 0.0 Doc ID 13477 Rev 8 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Phase () 30 RHF43B Achieving good stability at low gains 3 Achieving good stability at low gains At low frequencies, the RHF43B can be used in a low gain configuration as shown in Figure 23. At lower frequencies, the stability is not affected by the value of the gain, which can be set close to 1 V/V (0 dB), and is reduced to its simplest expression G1=1+Rfb/Rg. Therefore, an R-C cell is added in the gain network so that the gain is increased (up to 5) at higher frequencies (where the stability of the amplifier could be affected). At higher frequencies, the gain becomes G2=1+Rfb/(Rg//R). Figure 23. Low gain configuration Figure 24. Closed-loop gain A VD Gain (dB) Frequencies where the op-amp can be used VCC + Vin 1 2RC G2=1+Rfb/(Rg//R) Vout - -20 dB/dec +20 dB/dec RL 1 k CL = 100 pF VDD Gain bandwidth product Rfb = 2 k C R G1=1+Rfb//Rg 0 dB Rg Log frequency Bandwidth of the op-amp at G2 G1 2 (G1R+Rfb)C AM06122 AM06123 Rg becomes a complex impedance. The closed-loop gain features a variation in frequency and can be expressed as: G1R + Rfb 1 + jC x ----------------------------- G1 Gain = G1 ------------------------------------------------------------1 + jCR where a pole appears at 1/2RC and a zero at G1/2(G1R+Rfb)C. The frequency can be plotted as shown in Figure 24. Table 5. External components versus low-frequency gain G1 (V/V) R () C (nF) Rg () Rfb () 1.1 510 1 20k 2k 2 510 1 2k 2k 3 510 1 1k 2k 4 510 1 750 2.4k 5 Not connected Not connected 820 3.3k Doc ID 13477 Rev 8 11/16 Package information 4 RHF43B Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 12/16 Doc ID 13477 Rev 8 RHF43B 4.1 Package information Ceramic Flat-8 package information Figure 25. Ceramic Flat-8 package mechanical drawing Note: The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package. Connecting unused pins or metal lid to ground or to the power supply will not affect the electrical characteristics. Table 6. Ceramic Flat-8 package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 2.24 2.44 2.64 0.088 0.096 0.104 b 0.38 0.43 0.48 0.015 0.017 0.019 c 0.10 0.13 0.16 0.004 0.005 0.006 D 6.35 6.48 6.61 0.250 0.255 0.260 E 6.35 6.48 6.61 0.250 0.255 0.260 E2 4.32 4.45 4.58 0.170 0.175 0.180 E3 0.88 1.01 1.14 0.035 0.040 0.045 e 1.27 L 6.51 Q 0.66 S1 0.92 N 0.050 7.38 0.256 0.79 0.92 0.026 0.031 0.092 1.12 1.32 0.036 0.044 0.052 08 Doc ID 13477 Rev 8 0.291 08 13/16 Ordering information RHF43B 5 Ordering information Table 7. Order codes SMD pin Quality level Package Lead finish Packing Marking EPPL - Engineering model Flat-8 Gold Strip pack RHF43BK1 - RHF43BK-01V 5962F062370 1VXC QMLV-Flight Flat-8 Gold Strip pack 5962F06237 01VXC Y RHF43BDIE2V 5962F062370 1V9A QMLV-Flight Die - Strip pack - - Order code RHF43BK1 Note: 14/16 Contact your ST sales office for information regarding the specific conditions for products in die form and QML-Q versions. Doc ID 13477 Rev 8 RHF43B 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 21-May-2007 1 First public release. 10-Dec-2007 2 Changed name of pins on pinout diagram on cover page. Modified supply current values over temperature range in electrical characteristics. Power dissipation removed from AMR table. 29-Jan-2008 3 Added ELRS-free rad-hard design in description on cover page. Modified description of heavy ion latch-up (SEL) immunity parameter in Table 1 on page 2. 11-May-2009 4 Updated radiation immunity in Features on page 1 and in Table 1 on page 2. Updated smb reference in Features on page 1. 15-Oct-2009 5 Updated test conditions for Avd vs. Vicm in Table 3 on page 3 and Table 4 on page 5. Updated input current and voltage noise in Table 3. Updated order codes in Table 7 on page 14. 30-Mar-2010 6 Added Figure 4 and Figure 5. Added information for ambient temperature in Table 3 and Table 4. Added Chapter 3. 20-Aug-2010 7 Corrected "L" dimension in Table 6. 27-Jul-2011 8 Added Note: on page 13 and in the "Pin connections" diagram on the coverpage. Doc ID 13477 Rev 8 15/16 RHF43B Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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