July 2011 Doc ID 13477 Rev 8 1/16
16
RHF43B
Rad-hard precision bipolar single operational amplifier
Features
■High radiation immunity: 300 kRad TID at
high/low dose rate (ELDRS-free), tested
immunity of SEL /SEU at 125° C under
120 MeV/mg/cm² LET ions, 14 V supply
■Rail-to-rail output
■8 MHz gain bandwidth at 16 V
■Low input offset voltage: 100 µV typ
■Supply current: 2.2 mA typ
■Operating from 3 to 16 V
■Input bias current: 30 nA typ
■ESD internal protection ≥ 2kV
■Latch-up immunity: 200 mA
■QML-V RHA, ELDRS-free qualified under smd
5962-06237
Applications
■Space probes and satellites
■Defense systems
■Scientific instrumentation
■Nuclear systems
Description
The RHF43B is a precision bipolar operational
amplifier available in a ceramic 8-pin flat package
and in die form. ln addition to its low offset
voltage, rail-to-rail feature and wide supply
voltage, the RHF43B is designed for increased
tolerance to radiation. Its intrinsic ELDRS-free
rad-hard design allows this product to be used in
space applications and in applications operating
in harsh environments.
NC
+VCC
NC
OUT
-VCC
NC
IN -
IN +
Ceramic Flat-8
1
4
8
5
VDD
VCC
NC
+VCC
NC
OUT
-VCC
NC
IN -
IN +
Ceramic Flat-8
1
4
8
5
VDD
VCC
The upper metallic lid is not electrically connected to any
pins, nor to the IC die inside the package.
www.st.com
Absolute maximum ratings and operating conditions RHF43B
2/16 Doc ID 13477 Rev 8
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings (AMR)
Symbol Parameter Value Unit
VCC Supply voltage(1)
1. All values, except differential voltage are with respect to network terminal.
18
±9 V
Vid Differential input voltage (2)
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
±1.2 V
Vin Input voltage range(3)
3. The magnitude of input and output terminal must never exceed VCC + 0.3 V.
VDD-0.3 to 16 V
IIN Input current 45 mA
Tstg Storage temperature -65 to +150 °C
Rthja Thermal resistance junction to ambient(4)(5)
4. Short-circuits can cause excessive heating and destructive dissipation.
5. Rth are typical values.
125 °C/W
Rthjc Thermal resistance junction to case(4)(5) 40 °C/W
TjMaximum junction temperature 150 °C
ESD HBM: human body model(6)
6. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
2kV
Latch-up immunity 200 mA
Lead temperature (soldering, 10 sec) 260 °C
Radiation related parameters
Dose
Low dose rate of 0.01 rad.sec-1
(up to Vcc = 16 V) 300 kRad
High dose rate of 50-300 rad.sec-1
(up to Vcc = 16 V) 300 kRad
HI Heavy ion latch-up (SEL) immune with heavy ions
(up to Vcc = 14 V) 120 MeV.cm2/mg
Table 2. Operating conditions
Symbol Parameter Value Unit
VCC Supply voltage 3 to 16 V
Vicm Common mode input voltage range VDD to VCC V
Toper Operating free air temperature range -55 to +125 °C
RHF43B Electrical characteristics
Doc ID 13477 Rev 8 3/16
2 Electrical characteristics
Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions Ambient
temp. Min. Typ. Max. Unit
DC performance
ICC Supply current No load
+125°C 2.9
mA+25°C 2.5 2.9
-55°C 2.9
Vio Offset voltage Vicm = VCC/2
+125°C -500 500
µV+25°C -300 100 300
-55°C -500 500
DVio Input offset voltage drift - 1 μV/°C
Iib Input bias current Vicm = VCC/2
+125°C -100 100
nA+25°C -60 30 60
-55°C -100 100
DIib Input offset current tempera-
ture drift Vicm = VCC/2 - 100 pA/°C
Iio Input offset current Vicm = VCC/2
+125°C -35 35
nA+25°C -15 1 15
-55°C -35 35
Rin
Differential input resistance
between in+ and in- +25°C 0.16
MΩ
Input resistance between in+
(or in-) and GND +25°C 2000
Cin
Differential input capacitance
between in+ and in- +25°C 8
pF
Input capacitance between
in+ (or in-) and GND +25°C 2
CMR Common mode rejection ratio 0 < Vicm < 16 V
+125°C 72
dB+25°C 72 110
-55°C 72
SVR Supply rejection ratio 3V < V
CC <16 V
Vicm = VCC/2
+125°C 80
dB+25°C 90 120
-55°C 80
AVD Large signal voltage gain
Vout= 0.5 V to 15.5 V
RL=1kΩ
0 < Vicm < 16 V
+125°C 60
dB+25°C 74 85
-55°C 60
Electrical characteristics RHF43B
4/16 Doc ID 13477 Rev 8
VOH High level output voltage
RL=1kΩ
+125°C 15.6
V
+25°C 15.7 15.8
-55°C 15.6
RL=10kΩ
+125°C 15.8
+25°C 15.9 15.96
-55°C 15.8
VOL Low level output voltage
RL=1kΩ
+125°C 0.3
V
+25°C 0.1 0.2
-55°C 0.3
RL=10kΩ
+125°C 0.1
+25°C 0.04 0.06
-55°C 0.1
Iout
Output sink current Vout = VCC
+125°C 15
mA
+25°C 20 30
-55°C 15
Output source current Vout = VCC
+125°C 10
+25°C 15 25
-55°C 10
AC performance
GBP Gain bandwidth product F = 100 kHz
RL=1kΩ, CL= 100 pF
+125°C 3.5
MHz+25°C 6 8
-55°C 3.5
FuUnity gain frequency RL=1kΩ, CL= 100 pF +25°C 5 MHz
φm Phase margin Gain = +5
RL=1kΩ, CL= 100 pF +25°C 50 Degrees
SR Slew rate RL=1kΩ, CL= 100 pF
+125°C 1.7
V/μs+25°C 2 3
-55°C 1.7
enEquivalent input noise voltage F = 1 kHz +25°C 7.5
inEquivalent input noise current F = 1 kHz +25°C 1
THD+enTotal harmonic distortion
Vout = (VCC-1 V)/5
Gain = -5.1
Vicm =V
CC/2
+25°C 0.01 %
Table 3. 16 V supply: VCC = +16 V, VDD = 0 V, load to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions Ambient
temp. Min. Typ. Max. Unit
nV
Hz
------------
p
A
Hz
------------
RHF43B Electrical characteristics
Doc ID 13477 Rev 8 5/16
Table 4. 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions Ambient
temp. Min. Typ. Max. Unit
DC performance
ICC Supply current No load
+125°C 2.6
mA+25°C 2.2 2.6
-55°C 2.6
Vio Offset voltage
+125°C -500 500
µV+25°C -300 100 300
-55°C -500 500
DVio Input offset voltage drift - 1 μV/°C
Iib Input bias current VCC = +4 V
Vicm = VCC/2
+125°C -100 100
nA+25°C -60 30 60
-55°C -100 100
DIib Input offset current tempera-
ture drift
VCC = +4 V
Vicm = VCC/2 -100pA/°C
Iio Input offset current VCC = +4 V
Vicm = VCC/2
+125°C -35 35
nA+25°C -15 1 15
-55°C -35 35
Rin
Differential input resistance
between in+ and in- +25°C 0.16
MΩ
Input resistance between in+
(or in-) and GND +25°C 2000
Cin
Differential input capacitance
between in+ and in- +25°C 8
pF
Input capacitance between
in+ (or in-) and GND +25°C 2
CMR Common mode rejection ratio 0 < Vicm < 3 V
+125°C 72
dB+25°C 72 90
-55°C 72
AVD Large signal voltage gain
Vout= 0.5 V to 2.5 V
RL=1kΩ
0 < Vicm < 3 V
+125°C 60
dB+25°C 74 85
-55°C 60
Electrical characteristics RHF43B
6/16 Doc ID 13477 Rev 8
VOH High level output voltage
RL=1kΩ
+125°C 2.8
V
+25°C 2.9 2.95
-55°C 2.8
RL=10kΩ
+125°C 2.9
+25°C 2.94 2.98
-55°C 2.9
VOL Low level output voltage
RL=1kΩ
+125°C 0.2
V
+25°C 0.05 0.1
-55°C 0.2
RL=10kΩ
+125°C 0.1
+25°C 0.02 0.06
-55°C 0.1
Iout
Output sink current Vout = VCC
+125°C 15
mA
+25°C 20 30
-55°C 15
Output source current Vout = VCC
+125°C 10
+25°C 15 25
-55°C 10
AC performance
GBP Gain bandwidth product F = 100 kHz
RL=1kΩ, CL= 100 pF
+125°C 3.5
MHz+25°C 6 7.5
-55°C 3.5
FuUnity gain frequency RL=1kΩ, CL= 100 pF +25°C 5 MHz
φm Phase margin Gain = +5
RL=1kΩ, CL= 100 pF +25°C 50 Degrees
SR Slew rate RL=1kΩ, CL= 100 pF
+125°C 1.7
V/μs+25°C 2 2.7
-55°C 1.7
enEquivalent input noise voltage F = 1 kHz +25°C 7
inEquivalent input noise current F = 1 kHz +25°C 0.8
THD+enTotal harmonic distortion
Vout = (VCC-1 V)/5
Gain = -5.1
Vicm =V
CC/2
+25°C 0.01 %
Table 4. 3 V supply: VCC = + 3 V, VDD = 0, load to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions Ambient
temp. Min. Typ. Max. Unit
nV
Hz
------------
p
A
Hz
------------
RHF43B Electrical characteristics
Doc ID 13477 Rev 8 7/16
Figure 1. Input offset voltage distribution Figure 2. Input bias current vs. supply voltage
Figure 3. Input bias current vs. Vicm at
VCC =3V
Figure 4. Input bias current vs. Vicm at
VCC =4V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
−2.0
−1.5
−1.0
−0.5
0.0
0.5
1.0
Vcc = 4V
T= +125°C
T= +25°C
T= −55°C
Input bias current ( A)
Input Common Mode Voltage (V)
Figure 5. Input bias current vs. Vicm at
VCC =16V
Figure 6. Supply current vs. Vicm in follower
configuration at VCC =3V
0246810121416
−2.0
−1.5
−1.0
−0.5
0.0
0.5
1.0
Vcc = 16V
T= +125°C
T= +25°C
T= −55°C
Input bias current ( A)
Input Common Mode Voltage (V)
Electrical characteristics RHF43B
8/16 Doc ID 13477 Rev 8
Figure 7. Supply current vs. Vicm in follower
configuration at VCC =16V
Figure 8. Supply current vs. supply voltage
at Vicm =V
CC/2
Figure 9. Output current vs. supply voltage at
Vicm = VCC/2
Figure 10. Output current vs. output voltage at
VCC = 3 V
Figure 11. Output current vs. output voltage at
VCC = 16 V
Figure 12. Differential input voltage vs. output
voltage at VCC =3V
RHF43B Electrical characteristics
Doc ID 13477 Rev 8 9/16
Figure 13. Differential input voltage vs. output
voltage at VCC = 16 V
Figure 14. Noise vs. frequency at VCC= 3 V and
VCC = 16 V
Vcc=16V, Vicm=2.5V, Tamb=25°C
Vcc=3V, Vicm=2.5V, Tamb=25°C
Input equivalent noise density (nV/VHz)
Figure 15. Voltage gain and phase vs.
frequency at Vicm =1.5V
Figure 16. Voltage gain and phase vs.
frequency at Vicm =2.5V
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−180
−150−150
−120−120
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=3V, Vicm=1.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−1 8 0
−1 5 0−1 5 0
−1 2 0−1 2 0
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=3V, Vicm=2.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
Figure 17. Voltage gain and phase vs.
frequency at Vicm =0.5V
Figure 18. Voltage gain and phase vs.
frequency at Vicm =8V
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−180
−150−150
−120−120
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=3V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−1 8 0
−1 5 0−1 5 0
−1 2 0−1 2 0
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
Electrical characteristics RHF43B
10/16 Doc ID 13477 Rev 8
Figure 19. Voltage gain and phase vs.
frequency at Vicm =15.5V
Figure 20. Voltage gain and phase vs.
frequency at Vicm =0.5V
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−180
−150−150
−120−120
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=16V, Vicm=15.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−1 8 0
−1 5 0−1 5 0
−1 2 0−1 2 0
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
Figure 21. Inverting large signal pulse
response at VCC =3V, +25°C
Figure 22. Inverting Large signal pulse
response at VCC =16V, +25°C
-0.5 0.00.00.51.01.52.02.0 2.5 3.0 3.5 4.04.0 4.5
-2.0-2.0
-1.5-1.5
-1.0-1.0
-0.5-0.5
0.00.0
0.50.5
1.01.0
1.51.5
2.02.0
Vcc=3V, Vin=1Vpp
G=-100
Output Voltage (V))
-1.0-1.0 0.0 1.01.0 2.0 3.03.0 4.0 5.05.0 6.0 7.07.0 8.0 9.09.0
-8-8
-6-6
-4-4
-2-2
00
22
44
66
88
Vcc=16V, Vin=1Vpp,
G= -100
Output Voltage (V))
RHF43B Achieving good stability at low gains
Doc ID 13477 Rev 8 11/16
3 Achieving good stability at low gains
At low frequencies, the RHF43B can be used in a low gain configuration as shown in
Figure 23. At lower frequencies, the stability is not affected by the value of the gain, which
can be set close to 1 V/V (0 dB), and is reduced to its simplest expression G1=1+Rfb/Rg.
Therefore, an R-C cell is added in the gain network so that the gain is increased (up to 5) at
higher frequencies (where the stability of the amplifier could be affected). At higher
frequencies, the gain becomes G2=1+Rfb/(Rg//R).
Rg becomes a complex impedance. The closed-loop gain features a variation in frequency
and can be expressed as:
where a pole appears at 1/2πRC and a zero at G1/2π(G1R+Rfb)C. The frequency can be
plotted as shown in Figure 24.
Figure 23. Low gain configuration Figure 24. Closed-loop gain
Rg
V
CC
Rfb = 2 kΩ
RL
1 kΩ
VDD
C
L
= 100 pF
Vin Vout
C
R
+
-
AM06122
Log frequency
Gain
(dB)
+20 dB/dec
-
20 dB/dec
G2=1+Rfb/(Rg//R)
G1=1+Rfb//Rg
0 dB
Bandwidth
of the
op-amp at G2
Gain bandwidth
product
G1
2π(G1R+Rfb)C
1
2πRC
A
VD
Frequencies
where the
op-amp can
be used
AM06123
Table 5. External components versus low-frequency gain
G1 (V/V) R (Ω)C (nF)Rg (Ω)Rfb (Ω)
1.1 510 1 20k 2k
251012k2k
351011k2k
4 510 1 750 2.4k
5 Not connected Not connected 820 3.3k
Gain G1
1jCωG1R Rfb+
G1
-----------------------------
⎝⎠
⎛⎞
×+
1 jCRω+
-------------------------------------------------------------
=
Package information RHF43B
12/16 Doc ID 13477 Rev 8
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
RHF43B Package information
Doc ID 13477 Rev 8 13/16
4.1 Ceramic Flat-8 package information
Figure 25. Ceramic Flat-8 package mechanical drawing
Note: The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the
package. Connecting unused pins or metal lid to ground or to the power supply will not affect
the electrical characteristics.
Table 6. Ceramic Flat-8 package mechanical data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.24 2.44 2.64 0.088 0.096 0.104
b 0.38 0.43 0.48 0.015 0.017 0.019
c 0.10 0.13 0.16 0.004 0.005 0.006
D 6.35 6.48 6.61 0.250 0.255 0.260
E 6.35 6.48 6.61 0.250 0.255 0.260
E2 4.32 4.45 4.58 0.170 0.175 0.180
E3 0.88 1.01 1.14 0.035 0.040 0.045
e 1.27 0.050
L 6.51 7.38 0.256 0.291
Q 0.66 0.79 0.92 0.026 0.031 0.092
S1 0.92 1.12 1.32 0.036 0.044 0.052
N08 08
Ordering information RHF43B
14/16 Doc ID 13477 Rev 8
5 Ordering information
Note: Contact your ST sales office for information regarding the specific conditions for products in
die form and QML-Q versions.
Table 7. Order codes
Order code SMD pin Quality level Package Lead
finish Packing Marking EPPL
RHF43BK1 - Engineering
model Flat-8 Gold Strip pack RHF43BK1 -
RHF43BK-01V 5962F062370
1VXC QMLV-Flight Flat-8 Gold Strip pack 5962F06237
01VXC Y
RHF43BDIE2V 5962F062370
1V9A QMLV-Flight Die - Strip pack - -
RHF43B Revision history
Doc ID 13477 Rev 8 15/16
6 Revision history
Table 8. Document revision history
Date Revision Changes
21-May-2007 1 First public release.
10-Dec-2007 2
Changed name of pins on pinout diagram on cover page.
Modified supply current values over temperature range in electrical
characteristics.
Power dissipation removed from AMR table.
29-Jan-2008 3
Added ELRS-free rad-hard design in description on cover page.
Modified description of heavy ion latch-up (SEL) immunity parameter
in Table 1 on page 2.
11-May-2009 4
Updated radiation immunity in Features on page 1 and in Ta ble 1 o n
page 2.
Updated smb reference in Features on page 1.
15-Oct-2009 5
Updated test conditions for Avd vs. Vicm in Table 3 on page 3 and
Table 4 on page 5.
Updated input current and voltage noise in Ta b l e 3 .
Updated order codes in Table 7 on page 14.
30-Mar-2010 6
Added Figure 4 and Figure 5.
Added information for ambient temperature in Tab l e 3 and Ta b l e 4 .
Added Chapter 3.
20-Aug-2010 7 Corrected "L" dimension in Ta b l e 6 .
27-Jul-2011 8 Added Note: on page 13 and in the "Pin connections" diagram on the
coverpage.
RHF43B
16/16 Doc ID 13477 Rev 8
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
