A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 60 mA 65 V
BVCES IC = 60 mA 65 V
BVEBO IE = 10 mA 3.5 V
ICBO VCE = 36 V 25 mA
hFE VCE = 5.0 V IC = 5.0 A 20 ---
PG
η
ηη
ηC VCC = 50 V POUT = 350 W f = 1090 MHz 8.5
40 9.0
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF10350
DESCRIPTION:
The ASI MRF10350 is Designed for
TCAS/TACAN Applications
up to 1090 MHz.
FEATURES:
• Internal I nput Matching Net work
• PG = 8.5 dB at 350 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 31 A
VCBO 65 V
VCES 65 V
PDISS 1590 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 0.11 °C/W
PACKAGE STYLE .400 2NL FLG
C
B
B
E
MINIMUM
inc he s / mm
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
.396 / 10.06
.407 / 10.34
.130 / 3.30
inc h e s / mm
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C E
N
ØD
M
G
4x .062 x 45°
P
L K
I
J
2X B .025 x 45°
A
N
M.118 / 3.00 .131 / 3.33
.020 / 0.51 .030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03 .415 / 10.54
.072 / 1.83.052 / 1.32
P .230 / 5.84
