MBR1050 thru MBR1060
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125 C
IFSM
Maximum Ratings
10
150
A
A
Unit
o
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=125 C
CJTypical Junction Capacitance (Note 2)
TJOperating Temperature Range
0.1
25
2.5
400
-55 to +150
-55 to +175
mA
pF
o
o
Typical Thermal Resistance (Note 1)ROJC C/W
o
C
o
NOTES: 1. Thermal Resistance Junction To Case.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Dimensions TO-220AC
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
VFMaximum Forward
Voltage IF=20A @TJ=25 C
IF=20A @TJ=125 C
o
o0.95
0.70 V
MBR1050
MBR1060
VRRM
V
50
60
VRMS
V
35
42
VDC
V
50
60
A=Anode, C=Cathode, TAB=Cathode
CA
C(TAB) CA
MBR1050 thru MBR1060
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CY CLES AT 60Hz
PEAK FORWA RD SURGE CURR ENT ,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
2
050
8
175
CASE TEMPERATURE , C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
6
0
4
RESISTIVE OR
INDUCTIVE LOAD
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I NSTANTAN EOU S FO RWARD CURR ENT ,( A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
I NSTANTAN EOU S FO RWARD CURR ENT ,( A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
10
PERCENT OF RATE D PE AK RE VE RSE V OLTAGE, (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
T
J
= 100 C
0.01 T
J
= 25 C
T
J
= 75 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAG E , V OLTS
10
1100
10000
1000
100 0.1 4
T
J
= 25 C, f= 1MHz
