2SK2147-01R N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET FAP-II SERIES @ Features B Outline Drawings @ High speed switching Low on-resistance ig5t03_, P32e02 56403 @No secondary breakdown 35% @ Low driving power v a @ High voltage os = 4 \ @V.;= 30V Guarantee x) A OD @ ae Avalanche-proof 2403 I Uy. fo 1: Gate oa TUM || g 2+ Oren . : Wy) ack 8 3: Source @ Applications @ Switching regulators sasto2 | 5.45802 06F | | 3st02 @UPS @DC-DC converters JEDEC . General purpose power amplifier EIAJ Mi Max. Ratings and Characteristics @Absolute Maximum Ratings(Te= 25C} i Equivalent Circuit Schematic (unless otherwise specified) Items Symbols Ratings Units Drain (D) Drain-source voltage Vos 900 Vv Drain-gate vcltage(R,;=20KQ) Vor 500 Vv Continuous drain current lb 6 A Pulsed drain current Loyoursy 18 A Gate (G) Gate-source voltage Vas +30 V Source (S) Max. power dissipation P, 80 W Operating and storage Ton 150 Cc temperature range Tog 55~ +150 Cc @Electrical Characteristics(Tc=25'C) (unless otherwise specified) Items Symbols Test Conditions Min. | Typ. | Max. | Units Drain-source breakdown voltage V caaypss Ip=lmA Ves=OV 900 Vv Gate threshold voltage Vosam Ip=ImA Vos Ves 2.5 3.5 5.0 Vv Zero gate voltage drain current Ines Voos=900V Ten = 25C 16 900 HA Veg OV Ten = 125C 0.2 1.0 mA Gate-source leakage current less as=30V Vos =0V 10 100 nA Drain-source on-state resistance Rosco p23 Ves=10V 2.1 2.8 Qa Forward transconductance Bis Ip=3A Vngs=25V 2.0 4.5 S Input capacitance Cyes Vos = 25V 1200 1800 Output capacitance Coss Vos =0V 140 210 pF Reverse transfer capacitance Cres f =1MHz a0 75 Turn-on time ton talon Veo=600V Ip=3A 35 55 (ton = texom + te) ty vo =10V 110 170 ns Turn-off time tor tors R= 250 150 230 (tore = tacos + te) te os 100 150 Avalanche capability Tay L=1000H T.=25C 6 A Continuous reverse drain current Tor 6 A Pulsed reverse drain current Toum 18 A Diode forward on-voltage Ven Iy=2%Ipp Ves=OV Ty =25C 1.0 1.5 V Reverse recovery time ter T:=Inp Ves =0V 800 ns Reverse recovery charge Qn -dp/d=100A/us Ty, =25C 5 uc @Thermal Characteristics Items Symbols Test Conditions Min. | Typ. | Max. | Units | Runen<ay channel to air 30.0 | C/W Thermal resistance Ronen o channel to case 1.56 | C/W A2-413 FUJI POWER MOS-FET @ characteristics lo= (Vos) : 8048 pulse test, Ten= 25C Vos=2Q0V 10V OV TOV TOV av (A) Vos (V) Typical Output Characteristics lo=f (Vos): 80us pulse test, Vos=25V 15 Ton= 25C 0 lo (A) 5 0 2 4 6 & Ves(V) Typical Transfer Characteristics ofs= f{ 1b): 80.48 pulse test, Vos=25V Tone 25C gfs 0 5 10 6 InfAJ Typical Forward Transconductance vs. ip 2SK2147-01R Ros(on= f( Toh): lo= 3A, Vos= OV Roscon) (a) Terl?C) Drain-Source on-State Resistance vs. Tch Ros(on}= 10): Bus pulse test, Ton= 25C Vos=5.0V 5.5V 60V Rosiony (aJ 0 5 10 5 lofA] Typical Drain-Source on-State Resistance vs. lo 6 TT bd bare Vos(ind= f (Ton): Vos=Ves. jo= 1 mA | ~Fee fy _ ma x, 4 Vesan) (Vv) a 50 106 160 Teh (C) Gate Threshold Voltage vs. Teh A2-414 28SK2147-01pg FUJI! POWER MOS-FET 1! C= f(Vos): Ves= OV, f= 1MHz Ves=f(Qg): fo=6A Vos Vos Cc Vos (nF) (Vv) 10? 0 10 20 30 40 Vos(V] Qgint) Typical Capacitance vs. Vos Typical Input Charge 10? 100 lr= (Vso): 804s pulse test. Tere 25C 80 9! Po= f(Te) 60 Ir Po 40 Ce (Ww) 20 107! 9 0 50 100 60 VsolV) Tel'C) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. T- lo=#(Vos); D=001. To=25C 1? 10! 10 Ziich-c lo 108 (KW) (A) to t 107" T D to? 10-2 io" 10-8 102 10"! 108 19! 10 t{S) Vos(V3 Transient Thermal Impedance Safe Operating Area A2-415 = ( a 4 at 1 LHARUSOAR (ROD. BA Pa. PO. ESC) ROU RB Oe, RAM BC bY BHO Pee < BBANSCEMHOET COAT OPLAMAN TSN SA EHS, ZONRORMROLMBE ARLT. FR SEHR L TC EAL, 2 AAFTOTILRML THA SMA S, BLO RAL ARR SHER PSEOTHN, Baer ko CLM HE, TOME OBIS IT BREE SK SSH MEORTARS TTI ROTI AN SHA, 3. BLA eaA TNO RH CAMROM NIBH TORT. LOL. PRR Ons SE CARRY SO BETE AA DET, SLBA MOA REL CARA. AAMC E SMM S SIA Oe Ie RZ AM EDICT, MMB Caeat. RADNER Lat ae ER MEIRO MOP EME TKR, 4. AAR OPM L TANG, EMOMME MIR S 1S PAO S35 RAT OC ASL LE REIL CoH ThET, -oyYeKa-# -OARB MS a GOK) + aE + TERR (ee Fe HE a PS - FRET A RL 1h LAS HMA OKs b LE 5, AAS UTILAMORMM A, TROLS SCE METH ODA GCE PEO DSL, MAC Bt eA MBO, THERCC RED, LOA FOTOS HSOOMMICITD SI, SCCM AU ENERO LA RCL TB, AIR RI Sv oT FY AF AME, RENO HOOMOGEREHCS LEMS, RS e GHAR, AA E) + PRR PH 1 BR ia : GWE BE AUR OST WR/PLEE Be HERO 720 OS A 6. MO CRIMES DOR AMS PMO KD AMMBIIL, KAS SIACMONMAMA LACS Ra, + AR ae ~ AUC BBE TS FAR > CP ill a IE a ah * RAS ae 7 AASUSO-MEAAPMOMMMNI COC, MRCS SSHORMYER ST, & CAMAFUFOARICCPWOGRHORELES, RAMEE SATIRE AL. ZOMG ARI OS Rat, AH & OF IT fib TILE hoe SAU 6 SE ZOU EC SE 25 BOT D EAA, ue 7 @tSehaNStl PFRBER ND EMRE RSME wm (03) 5388-7657 RAPE HM SAL m (06) 455-6467 = PRES 530832 @ (03) 5388-7681 ALES ER @ (0764) 41-1231 me heures q RAAB a (03) 5388-7680 oe ee = (0878) 51-0185 @ (93) 5388-7651 RSH mf (0263) 36-6740 HERMES RE GB (052) 204-0295 79) BEE EB @ (03) 5388-7685 AMMAR om (092) 7391-7132