AOD210 30V N-Channel MOSFET General Description Product Summary The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 30V 70A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3m RDS(ON) (at VGS = 4.5V) < 4m 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25C Power Dissipation B TA=25C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev0 : May 2010 IAS, IAR 68 A EAS, EAR 231 mJ 150 Steady-State Steady-State W 75 2.7 RJA RJC www.aosmd.com W 1.7 TJ, TSTG Symbol t 10s A 18 PDSM TA=70C A 23 PD TC=100C V 390 IDSM TA=70C 20 55 IDM TA=25C Continuous Drain Current Units V 70 ID TC=100C Maximum 30 -55 to 175 Typ 14.2 39 0.8 C Max 17 47 1 Units C/W C/W C/W Page 1 of 6 AOD210 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1 ID(ON) On state drain current VGS=10V, VDS=5V 390 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s A 100 nA 1.7 2.2 V 2.4 3 3.7 4.7 2.95 3.9 m 1 V 70 A A 78 0.65 m S 2800 3520 4300 pF 920 1320 1720 pF 50 90 155 pF 0.5 1 1.5 39 48 58 nC 17 22 27 nC 7 9 11 nC 4 7 10 nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s Units V 1 TJ=55C Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 11 ns 10 ns 38 ns 10 ns 14 21 28 40 58 76 ns nC A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : May 2010 www.aosmd.com Page 2 of 6 AOD210 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 3V VDS=5V 80 60 60 ID(A) ID (A) 100 10V 7V 3.5V 40 40 125C 20 20 25C Vgs=2.5V 0 0 0 1 2 3 4 1 5 8 Normalized On-Resistance RDS(ON) (m) 2 2.5 3 3.5 4 2 6 VGS=4.5V 4 2 VGS=10V 0 1.8 VGS=10V ID=20A 1.6 17 1.4 VGS=4.5V5 ID=15A 2 1.2 10 1 0.8 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 0 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 8 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 IS (A) 6 RDS(ON) (m) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125C 4 125C 1.0E-01 25C 1.0E-02 1.0E-03 2 1.0E-04 25C 1.0E-05 0.0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: May 2010 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD210 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=20V ID=20A 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10s 100s 1ms 10ms DC 1.0 TJ(Max)=175C TC=25C 0.1 0.0 0.01 0.1 1 VDS (Volts) 500 10s Power (W) ID (Amps) RDS(ON) limited 10.0 10 1 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 17 5 2 10 300 200 10 100 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=1C/W PD 0.1 0.01 0.00001 TJ(Max)=175C TC=25C 400 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 30 600 1000.0 100.0 10 Ton Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: May 2010 www.aosmd.com Page 4 of 6 AOD210 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100C 100 TA=150C TA=125C 10 160 120 80 40 0 0 1 10 100 1000 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F) 80 10000 60 1000 Power (W) Current rating ID(A) TA=25C 40 10 20 1 0.00001 0 0 25 50 75 100 125 150 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 0.001 0.1 10 0 18 175 TCASE (C) Figure 14: Current De-rating (Note F) ZJA Normalized Transient Thermal Resistance 17 5 2 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=47C/W 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: May 2010 www.aosmd.com Page 5 of 6 AOD210 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: May 2010 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6