CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 -- 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 150 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW 1-Tone pulsed [1] [1] f PL Gp D (MHz) (W) (dB) (%) 500 50 12 64 1000 50 13 43 1500 50 13 43 2000 50 14 43 2500 50 11 48 500 50 12 65 1000 50 15 43 1500 50 15 43 2000 50 15 44 2500 50 13 49 Pulsed RF; tp = 100 s; = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 275 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 2-Tone CW [1] [1] 2-Tone CW; f = 1 MHz. f PL(PEP) IMD3 (MHz) (W) (dBc) 500 10 48 1000 10 40 1500 10 43 2000 10 38 2500 10 38 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 1.2 Features and benefits Frequency of operation is from DC to 3.5 GHz 50 W general purpose broadband RF Power GaN HEMT Excellent ruggedness (VSWR 10 : 1) High voltage operation (50 V) Thermally enhanced package 1.3 Applications Commercial wireless infrastructure (cellular, WiMAX) Industrial, scientific, medical Radar Jammers Broadband general purpose amplifier EMC testing Public mobile radios Defense application 2. Pinning information Table 3. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol [1] [1] DDD Connected to flange. 3. Ordering information Table 4. Ordering information Type number Package CLF1G0035S-50 CLF1G0035S-50 Objective data sheet Name Description Version - earless ceramic package; 2 leads SOT467B All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 2 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage IGF forward gate current Tstg storage temperature junction temperature Tj [1] external RG = 5 [1] measured via IR scan Min Max Unit - 150 V 8 +3 V - 18 mA 65 +150 C - 250 C Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. 5. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-c) [1] Conditions thermal resistance from junction to case Tj = 200 C [1] Typ Unit 2.1 K/W Tj is measured via IR scan with case temperature of 85 C and power dissipation of 55 W. 6. Characteristics Table 7. DC Characteristics Tcase = 25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - VGS = 7 V; IDS = 12 mA 150 VGS(th) gate-source threshold voltage VDS = 0.1 V; IDS = 12 mA 2.4 2 1.3 V IDSX drain cut-off current VDS = 10 V; VGS = 3 V - 8.8 - A gfs forward transconductance VDS = 10 V; VGS = 0 V - 2.0 - S V(BR)DSS drain-source breakdown voltage V Table 8. RF Characteristics Test signal: 1-Tone CW; RF performance at VDS = 50 V; IDq = 150 mA; f = 3 GHz; Tcase = 25 C; unless otherwise specified in a class-AB production circuit. CLF1G0035S-50 Objective data sheet Symbol Parameter Conditions Min D drain efficiency PL = 50 W Gp power gain PL = 50 W RLin input return loss PL = 50 W All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 Typ Max Unit 47 54 - % 9.8 11.5 - dB - 5 - dB (c) NXP Semiconductors N.V. 2014. All rights reserved. 3 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 7. Application information 7.1 Demo circuit & & 4 & & & / 5 & / 5 & & & 5 & & 5 & & & & & / 4 & & 4 & - $ ( 3 ( DDD Fig 1. The broadband amplifier (500 MHz to 2500 MHz) demo circuit outline Table 9. List of components See Figure 1 and Figure 2 CLF1G0035S-50 Objective data sheet Component Description Value Remarks A1 GaN bias module v1 - NXP C1 multilayer ceramic chip capacitor 1.5 pF ATC 600F1R5BT C3, C6 multilayer ceramic chip capacitor 1.2 pF ATC 600F1R2BT C4 multilayer ceramic chip capacitor 5.6 pF ATC 600F5R6CT C5 multilayer ceramic chip capacitor 2.2 pF ATC 600F2R2BT C7 multilayer ceramic chip capacitor 0.5 pF ATC 600F0R5BT C8 multilayer ceramic chip capacitor 20 pF ATC 600F200JT C9 capacitor 1 pF to 4 pF Tronser 66-0304-00004-000 C10 multilayer ceramic chip capacitor 10 nF generic C11 multilayer ceramic chip capacitor 22 pF generic C12 multilayer ceramic chip capacitor 1 nF generic All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 4 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT Table 9. List of components ...continued See Figure 1 and Figure 2 CLF1G0035S-50 Objective data sheet Component Description Value Remarks C13 multilayer ceramic chip capacitor 100 nF generic C20 multilayer ceramic chip capacitor 1 nF ATC 100B102KW C21 multilayer ceramic chip capacitor 100 pF ATC 100B101JW C22, C26 multilayer ceramic chip capacitor 10 nF generic C23 multilayer ceramic chip capacitor 10 F TDK C5750X7S2A106M C25 multilayer ceramic chip capacitor 1 F generic Panasonic EEE-TK1J471AM C27 electrolytic capacitor 470 F E1, E2 drain voltage connection - J1 RF in connector - J2 RF out connector - J3, P1 1 row, 3-way vertical DC connector header L1 inductor 12.5 nH L2 inductor 4 nH L3 ferrite bead - Fair-Rite 2743019447 Q1 transistor - NXP CLF1G0035-50 Q2 transistor - NXP BC857B Q3 transistor - NXP PSMN8R2-80YS Coil craft A04T R1 resistor, 10 generic R2 resistor 10.0 k generic R3, R4 resistor 100 generic Z1, Z2, Z3, Z4, Z5, Z6 microstrip lines - All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 5 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT $ ,1 3 - ' * 6 9* *$1%,$6 )% 02'8/( & *1' % 4 *1' %&% ( 9',1 ( & )9 4 36015<6 *1' ( *1' & Q) & Q) & Q) / 5 N 1) & / Q+ = S) [PP [PP [PP & Q) & Q) & ) S) 4 &/)* & S) & S) & 5 & S) = = & ) 5 / Q+ - & Q) = = = & - [PP [PP [PP S) 1) & S) & S) & S) & S) DDD See Table 9 for a list of components. Fig 2. The broadband amplifier (500 MHz to 2500 MHz) demo circuit schematic 7.2 Application test results Table 10. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 150 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW 1-Tone pulsed [1] CLF1G0035S-50 Objective data sheet [1] f PL Gp D (MHz) (W) (dB) (%) 500 50 12 64 1000 50 13 43 1500 50 13 43 2000 50 14 43 2500 50 11 48 500 50 12 65 1000 50 15 43 1500 50 15 43 2000 50 15 44 2500 50 13 49 Pulsed RF; tp = 100 s; = 10 %. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 6 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT Table 11. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 275 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 2-Tone CW [1] [1] f PL(PEP) IMD3 (MHz) (W) (dBc) 500 10 48 1000 10 40 1500 10 43 2000 10 38 2500 10 38 2-Tone CW; f = 1 MHz. 7.3 Graphical data The following figures are measured in a broadband amplifier demo board from 500 MHz to 2500 MHz. 7.3.1 1-Tone CW RF performance DDD *S G% ' *S DDD *S G% ' ' I 0+] VDS = 50 V; IDq = 150 mA; PL = 50 W. 3/ G%P VDS = 50 V; IDq = 150 mA. (1) Gp at f = 500 MHz (2) Gp at f = 1500 MHz (3) Gp at f = 2500 MHz (4) D at f = 500 MHz (5) D at f = 1500 MHz (6) D at f = 2500 MHz Fig 3. Power gain and drain efficiency as function of frequency; typical values CLF1G0035S-50 Objective data sheet Fig 4. Power gain and drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 7 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT DDD *S*/ G% ,* P$ */ *S ,* 3/ G%P VDS = 50 V; IDq = 150 mA. Fig 5. Power gain, linear gain and gate current as function of output power; typical values 7.3.2 1-Tone pulsed RF performance DDD *S G% *S DDD ' *S G% ' ' I 0+] 3/ G%P f = 100 kHz, VDS = 50 V; IDq = 150 mA. VDS = 50 V; IDq = 150 mA; PL = 50 W. (1) Gp at f = 500 MHz (2) Gp at f = 1500 MHz (3) Gp at f = 2500 MHz (4) D at f = 500 MHz (5) D at f = 1500 MHz (6) D at f = 2500 MHz Fig 6. Power gain and drain efficiency as function of frequency; typical values CLF1G0035S-50 Objective data sheet Fig 7. Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 8 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT DDD *S G% DDD 5/LQ G% I 0+] Pi = 10 dBm, VDS = 50 V; IDq = 150 mA. Fig 8. I 0+] Pi = 10 dBm, VDS = 50 V; IDq = 150 mA. Power gain as a function of frequency; typical values Fig 9. Input return loss as a function of frequency; typical values 7.3.3 2-Tone CW performance DDD ,0' G%F DDD ,0' G%F 3/ 3(3 : 3/ 3(3 : f = 1 MHz; VDS = 50 V; IDq = 150 mA. f = 1 MHz; VDS = 50 V; IDq = 275 mA. (1) f = 500 MHz (1) f = 500 MHz (2) f = 1500 MHz (2) f = 1500 MHz (3) f = 2500 MHz (3) f = 2500 MHz Fig 10. Third-order intermodulation distortion as a function of peak envelope power load power; typical values CLF1G0035S-50 Objective data sheet Fig 11. Third-order intermodulation distortion as a function of peak envelope power load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 9 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT DDD ,0' G%F I 0+] VDS = 50 V; IDq = 275 mA; PL(PEP) = 10 W. (1) f = 10 kHz (2) f = 30 kHz (3) f = 100 kHz (4) f = 300 kHz (5) f = 1 MHz (6) f = 3 MHz Fig 12. Third-order intermodulation distortion as a function of frequency; typical values 7.4 Bias module The bias module information for the GaN HEMT amplifier is described in application note AN11130. 8. Test information 8.1 Ruggedness in class-AB operation The CLF1G0035S-50 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; PL = 50 W (CW), f = 2500 MHz. 8.2 Load pull impedance information The measured load pull impedances are shown below. Impedance reference plane defined at device leads. Measurements performed with NXP test fixtures. Test temperature set at 25 C with a CW signal. CLF1G0035S-50 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 10 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT Table 12. Typical impedance Typical values unless otherwise specified. ZL (maximum D) f ZS ZL (maximum PL(M)) (MHz) () () () 500 6.4 + 4j 9.7 + 7j 10 + 5.0j 1000 1.9 + 2.2j 9.1 + 12.4j 10 + 6.0j 2000 1.9 2.9j 5 + 4.1j 6.6 + 1.4j 2500 2.1 6.3j 3.6 + 0.75j 4.5 0.4 j 3000 2.5 9j 3.9 1.2j 5.8 1.8j 3500 2.9 14j 6.6 2j 5.8 3j GUDLQ JDWH VRXUFH =6 =/ DDD Fig 13. Definition of transistor impedance ZS is the measured source pull impedance presented to the device. ZL is the measured load pull impedance presented to the device. CLF1G0035S-50 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 11 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 8.3 Packaged S-parameter data Table 13. S-parameter Small signal; VDS = 50 V; IDq = 150 mA; ZS = ZL = 50 f (MHz) S11 S21 S12 S22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 500 0.82686 168.9 9.6028 67.238 0.01482 9.5809 0.48482 133.17 600 0.82717 171.62 7.7589 61.123 0.013844 12.463 0.52053 136.01 700 0.82892 173.81 6.4386 55.547 0.01282 14.415 0.55589 138.65 800 0.83183 175.69 5.4524 50.412 0.011783 15.413 0.58964 141.17 900 0.83572 177.39 4.6934 45.655 0.010764 15.358 0.62126 143.61 1000 0.84047 178.98 4.096 41.233 0.0097946 14.091 0.65063 145.96 1100 0.84604 179.5 3.618 37.11 0.008907 11.409 0.67787 148.22 1200 0.85244 178 3.2306 33.257 0.0081421 7.0907 0.70319 150.39 1300 0.8597 176.51 2.9136 29.648 0.0075495 0.99281 0.72687 152.47 1400 0.86785 175.01 2.6525 26.259 0.0071873 6.7932 0.74919 154.47 1500 0.87697 173.47 2.4362 23.07 0.0071125 15.766 0.77044 156.39 1600 0.88715 171.88 2.2569 20.062 0.0073641 25.034 0.79086 158.24 1700 0.89848 170.23 2.1083 17.22 0.007952 33.645 0.81069 160.04 1800 0.90446 168.57 1.972 14.461 0.0088014 40.908 0.8252 161.7 1900 0.90172 166.97 1.839 11.713 0.0098257 46.58 0.83233 163.2 2000 0.89927 165.33 1.7253 9.0465 0.011062 50.849 0.83898 164.63 2100 0.89713 163.64 1.6281 6.4503 0.012486 53.942 0.84528 166 2200 0.89532 161.88 1.5454 3.9129 0.014088 56.092 0.85135 167.32 2300 0.89386 160.04 1.4755 1.4231 0.015869 57.498 0.85727 168.6 2400 0.89277 158.1 1.4171 1.0309 0.01784 58.314 0.86313 169.84 2500 0.89205 156.03 1.3692 3.4611 0.020023 58.659 0.86899 171.05 2600 0.89096 153.83 1.3297 5.8933 0.022423 58.605 0.87436 172.23 2700 0.88445 151.58 1.2888 8.4222 0.024891 58.132 0.87579 173.35 2800 0.87762 149.17 1.2551 10.982 0.027588 57.364 0.87715 174.44 2900 0.87039 146.59 1.2281 13.588 0.030547 56.329 0.87847 175.5 3000 0.86268 143.8 1.2076 16.259 0.033808 55.045 0.8798 176.54 3100 0.85434 140.75 1.1934 19.013 0.037423 53.519 0.88118 177.56 3200 0.84525 137.4 1.1855 21.877 0.041451 51.748 0.88265 178.56 3300 0.83522 133.68 1.1839 24.877 0.045967 49.721 0.88425 179.53 3400 0.82403 129.52 1.1889 28.05 0.051058 47.418 0.88607 179.52 3500 0.80856 125.24 1.1872 31.326 0.056194 44.92 0.88556 178.56 3600 0.79077 120.6 1.1867 34.765 0.061705 42.174 0.88468 177.6 3700 0.77106 115.45 1.1896 38.412 0.067742 39.146 0.88406 176.66 3800 0.74926 109.7 1.1956 42.297 0.074348 35.812 0.88382 175.74 3900 0.72527 103.23 1.2044 46.449 0.081559 32.146 0.88412 174.82 4000 0.69912 95.917 1.2152 50.902 0.089394 28.121 0.88516 173.9 4100 0.67108 87.595 1.2274 55.686 0.097849 23.71 0.88717 172.98 CLF1G0035S-50 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 12 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT Table 13. S-parameter ...continued Small signal; VDS = 50 V; IDq = 150 mA; ZS = ZL = 50 f (MHz) S11 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 4200 0.64183 78.092 1.24 60.826 0.10688 18.891 0.89042 172.03 4300 0.6126 67.228 1.2515 66.34 0.11639 13.65 0.89516 171.03 4400 0.58534 54.856 1.2604 72.231 0.12622 7.9864 0.90159 169.95 4500 0.5628 40.93 1.2649 78.48 0.13615 1.9193 0.90984 168.75 4600 0.54816 25.608 1.2633 85.047 0.14588 4.5074 0.91983 167.38 4700 0.54433 9.3292 1.2542 91.862 0.15511 11.224 0.9313 165.79 4800 0.55279 7.214 1.2369 98.835 0.16356 18.138 0.94381 163.95 4900 0.57293 23.266 1.2115 105.86 0.17103 25.144 0.95677 161.82 5000 0.60219 38.234 1.1791 112.84 0.17745 32.138 0.96962 159.39 5100 0.63534 51.341 1.1406 119.47 0.18272 38.825 0.9807 156.67 5200 0.66527 61.779 1.0972 125.31 0.18683 44.756 0.98704 153.74 5300 0.69493 71.079 1.0544 130.96 0.1906 50.53 0.99214 150.52 5400 0.72195 78.947 1.0134 136.23 0.19423 55.963 0.99508 147.04 5500 0.74577 85.567 0.97537 141.15 0.19795 61.088 0.99579 143.28 5600 0.76759 91.49 0.94075 146 0.20193 66.161 0.99532 139.15 5700 0.78744 96.798 0.90986 150.8 0.20632 71.236 0.99371 134.58 5800 0.80548 101.57 0.88283 155.64 0.21125 76.374 0.99093 129.47 5900 0.82197 105.86 0.85961 160.58 0.21682 81.647 0.98694 123.72 6000 0.83722 109.72 0.84 165.71 0.22309 87.14 0.98164 117.18 CLF1G0035S-50 Objective data sheet S21 S12 All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 S22 (c) NXP Semiconductors N.V. 2014. All rights reserved. 13 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 9. Package outline (DUOHVVFHUDPLFSDFNDJHOHDGV 627% ' $ ) ' ' 8 F ( 8 + ( Z E $ PP VFDOH 'LPHQVLRQV 8QLW $ E PD[ QRP PLQ PP 4 F ' ' ( ( ) + 4 8 8 Z PD[ LQFKHV QRP PLQ 1RWH PLOOLPHWHUGLPHQVLRQVDUHGHULYHGIURPWKHRULJLQDOLQFKGLPHQVLRQV 2XWOLQH YHUVLRQ 5HIHUHQFHV ,(& -('(& -(,7$ VRWEBSR (XURSHDQ SURMHFWLRQ ,VVXHGDWH 627% Fig 14. Package outline SOT467B CLF1G0035S-50 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 14 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 10. Handling information 10.1 ESD Sensitivity Table 14. ESD sensitivity ESD model Class Human Body Model (HBM); According JEDEC standard JESD22-A114F 1B [1] [1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after exposure to an ESD pulse of 1000 V. 11. Abbreviations Table 15. Abbreviations Acronym Description CW Continuous Wave EMC ElectroMagnetic Compatibility ESD ElectroStatic Discharge GaN Gallium Nitride HEMT High Electron Mobility Transistor MTF Median Time to Failure VSWR Voltage Standing-Wave Ratio WiMAX Worldwide Interoperability for Microwave Access 12. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes CLF1G0035S-50 v.4 20141106 - Modifications: * Objective data sheet CLF1G0035-50_1G0035S-50 v.3 The document now describes only the earless version of this product: CLF1G0035S-50. CLF1G0035-50_1G0035S-50 v.3 20140926 Objective data sheet - CLF1G0035-50_1G0035S-50 v.2 CLF1G0035-50_1G0035S-50 v.2 20130129 Objective data sheet - CLF1G0035-50_1G0035S-50 v.1 CLF1G0035-50_1G0035S-50 v.1 20120615 Objective data sheet - - CLF1G0035S-50 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 15 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. CLF1G0035S-50 Objective data sheet Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 16 of 18 CLF1G0035S-50 NXP Semiconductors Broadband RF power GaN HEMT Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com CLF1G0035S-50 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 6 November 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved. 17 of 18 NXP Semiconductors CLF1G0035S-50 Broadband RF power GaN HEMT 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.3.1 7.3.2 7.3.3 7.4 8 8.1 8.2 8.3 9 10 10.1 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application test results . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Tone CW RF performance. . . . . . . . . . . . . . . 7 1-Tone pulsed RF performance . . . . . . . . . . . . 8 2-Tone CW performance . . . . . . . . . . . . . . . . . 9 Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Ruggedness in class-AB operation . . . . . . . . 10 Load pull impedance information . . . . . . . . . . 10 Packaged S-parameter data. . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Handling information. . . . . . . . . . . . . . . . . . . . 15 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 November 2014 Document identifier: CLF1G0035S-50 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: CLF1G0035S-50,112