DS30037 Rev. 6 - 2 1 of 3 MMBTA05 / MMBTA06
www.diodes.com ã Diodes Incorporated
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Types Available
(MMBTA55 / MMBTA56)
·Ideal for Medium Power Amplification and Switching
·Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic Symbol MMBTA05 MMBTA06 Unit
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 4.0 V
Collector Current - Continuous (Note 1) IC500 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 K/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·MMBTA05 Marking (See Page 2): K1G, K1H
·MMBTA06 Marking (See Page 2): K1G
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage MMBTA05
MMBTA06 V(BR)CBO 60
80 ¾VIC= 100mA, IE = 0
Collector-Emitter Breakdown Voltage MMBTA05
MMBTA06 V(BR)CEO 60
80 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 4.0 ¾VIE = 100mA, IC = 0
Collector Cutoff Current MMBTA05
MMBTA06 ICBO ¾100 nA VCB = 60V, IE= 0
VCB = 80V, IE= 0
Collector Cutoff Current MMBTA05
MMBTA06 ICES ¾100 nA VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 100 ¾¾
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.25 V IC= 100mA, IB = 10mA
Base-Emitter Saturation Voltage VBE(SAT) ¾1.2 V IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT100 ¾MHz VCE = 2.0V, IC = 10mA,
f = 100MHz
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Features
SPICE MODEL: MMBTA05 MMBTA06
DS30037 Rev. 6 - 2 2 of 3 MMBTA05 / MMBTA06
www.diodes.com
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
I , COLLECTOR-BASE CURRENT (nA)
CBO
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 2 Typical Collector-Cutoff Current
vs. Ambient Tem
p
erature
10
0.01
0.1
1
25 50 75 100 125
V = 80V
CB
0.001 0.01
I BASE CURRENT (mA)
B,
Fi
g
.3T
y
pical Collector Saturation Re
g
ion
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
.
0
0.1 110 100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
K1x = Product Type Marking Code, e.g. K1G
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1x
YM
Marking Information
Ordering Information
Device Packaging Shipping
MMBTA05-7
MMBTA06-7 SOT-23 3000/Tape & Reel
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
(Note 4)
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBTA06-7-F.
DS30037 Rev. 6 - 2 3 of 3 MMBTA05 / MMBTA06
www.diodes.com
1
10
1000
10000
100
110 1000
100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 5, DC Current Gain vs
Collector Current
T = -50°C
AT=25°C
A
T = 150°C
A
V=5V
CE
0.1
0.2
0.1 1 10 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
.
0
V= 5V
CE
I , COLLECTOR CURRENT (mA)
C
Fig. 6, Base Emitter Voltage vs Collector Current
T = -50°C
A
T = 25°C
A
T = 150°C
A
1
10
1000
100
110
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 7, Gain Bandwidth Product vs
Collector Current
V=5V
CE
110 100 1000
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Collector Emitter Saturation Voltage
vs. Collector Current
T=25°C
A
T = -50°C
A
T = 150°C
A
0.050
0
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
IC
IB
=10
