2SK3497
2009-01-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
z High breakdown voltage: VDSS = 180 V
z Complementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS 180 V
Gate−source voltage VGSS ±12 V
DC (Note 1) ID 10 A
Drain current
Pulse (Note 1) IDP 30 A
Drain power dissipation (Tc = 25°C) PD 130 W
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch−c) 0.96 °C / W
Thermal resistance, channel to
ambient Rth (ch−a) 50 °C / W
Unit: mm
20.0 ± 0.3 20.5 ± 0.5
4.8 MAX.
3.3 MAX.
9.0
2.0 1.0
4.5
2.0
2.8
Ф3.2 ± 0.2
15.9 MAX.
5.45 ± 0.2 5.45 ± 0.2
2.0
±
0.3
1.0
1 2 3
＋0.3
－0.25
0.6 ＋0.3
－0.1
1.8 MAX.
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC ⎯
JEITA SC-65
TOSHIBA 2-16C1B
Weight: 4.6 g (typ.)
1
3
2
2SK3497
2009-01-27
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain cut−off current IDSS VDS = 180V, VGS = 0 V ⎯ ⎯ 100 μA
Gate leakage current IGSS VGS = ±12 V, VDS = 0 V ⎯ ⎯ 10 μA
Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 180 ⎯ ⎯ V
Drain−source saturation voltage VDS (ON) V
GS = 7 V, ID = 5 A ⎯ ⎯ 0.75 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.1 V
Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 A 6.0 12.0 ⎯ S
Input capacitance Ciss ⎯ 2400 ⎯
Output capacitance Coss ⎯ 220 ⎯
Reverse transfer capacitance Crss
VDS = 30 V, VGS = 0 V, f = 1 MHz
⎯ 30 ⎯
pF
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
K3497
TOSHIBA
Lot No.
A
line indicates
Lead (Pb)-Free
Part No. (or abbreviation code)
2SK3497
2009-01-27
3
160
0
60
120
150
40 80
30
0 120
90
−80 0
2
3
1
0
40 80 120 160
Ciss
Coss
Crss
1000
100
10
10000
0.1 1 10 100
0
0 1 3 4
VGS = 2.5 V
10
25
4
2
8
2
6
0
0 2 4 6 8 10
4
8
12
16
20
3
Case temperature Tc (°C)
Capacitance C (pF)
Drain−source saturation voltage
VDS (ON) (V)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Forward transfer admittance ⎪Yfs⎪ (S)
Case temperature Tc (°C)
VDS (ON) – Tc
Drain-source voltage VDS (V)
Capacitance – VDS
PD – Tc
Drain power dissipation PD (W)
Drain current ID (A)
⎪Yfs⎪ – ID
Common source
VGS = 0 V
f=1 MHZ
Tc = 25°C
Common source
VDS = 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
VGS = 10 V
Pulse test
ID = 10 A
Tc = 100°C
Tc = 100°C
−55
−55
25
3.5
4
2.5
5
100
1
10
0.1
0.1 101−40
2SK3497
2009-01-27
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Safe operating area
Drain current ID (A)
Drain-source voltage VDS (V)
10
1 100
t = 1 ms*
VDSS
MAX.
10
1
100
0.1
1000
DC OPERATION
Tc=25℃
ID MAX. (pulsed) *
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
ID MAX. (continuous)
2SK3497
2009-01-27
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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
