Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. * Specified 12.5 Volt, 30 MHz Characteristics -- Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55% 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON MATCHING PROCEDURE In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by Motorola consists of measuring h FE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units. MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 18 Vdc Collector-Emitter Voltage VCES 36 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 15 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 175 1.0 Watts W/C Storage Temperature Range Tstg - 65 to +150 C CASE 211-07, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.0 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) V(BR)CEO 18 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 36 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc hFE 10 -- 150 -- Cob -- -- 250 pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF455 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz) Gpe 13 -- -- dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz) 55 -- -- % Series Equivalent Input Impedance (VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz) Zin -- 1.66-j.844 -- Ohms Series Equivalent Output Impedance (VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz) Zout -- 1.73-j.188 -- Ohms Parallel Equivalent Input Impedance (VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz) Zin -- 2.09/1030 -- /pF Parallel Equivalent Output Impedance (VCC = 12.5 Vdc, Pout = 60 W, f = 30 MHz) Zout -- 1.75/330 -- /pF FUNCTIONAL TESTS (Figure 1) L5 + C5 C6 C7 C8 12.5 Vdc L3 - RF OUTPUT C1 DUT L1 C4 RF INPUT L4 C3 C2 L2 R1 L1 -- 3 Turns, #18 AWG, 5/16 I.D., 5/16 Long L2 -- VK200-20/4B, FERROXCUBE L3 -- 12 Turns, #18 AWG Enameled Wire, 1/4 I.D., Close Wound L4 -- 3 Turns 1/8 O.D. Copper Tubing, 3/8 I.D., 3/4 Long L5 -- 7 FERRITE Beads, FERROXCUBE #56-590-65/3B C1, C2, C4 -- ARCO 469 C3 -- ARCO 466 C5 -- 1000 pF, UNELCO C6, C7 -- 0.1 F Disc Ceramic C8 -- 1000 F/15 V Electrolytic R1 -- 10 Ohm/1.0 Watt, Carbon Figure 1. 30 MHz Test Circuit Schematic 90 VCC = 13.6 V f = 30 MHz 70 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 80 12.5 V 60 50 40 30 20 f = 30 MHz 1.75 W 70 1W 60 50 40 30 20 10 0 Pin = 3.5 V 80 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power MRF455 2 5 10 8 9 10 11 12 13 14 15 16 17 18 VCC, SUPPLY VOLTAGE (VOLTS) Figure 3. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA