MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66099 RADIATION TOLERANT TO-5 OPTOCOUPLER
09/09/03
Features:
• Meets or exceeds MIL-PRF-19500 radiation
requirements
• Current Transfer Ratio-150% typical
• 1kVdc electrical input to output isolation
• Base lead provided for conventional transistor
biasing
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
DESCRIPTION
The 66099 Optocoupler consists of a 660 nm GaAIAs LED optically coupled to a photodiode detector driving a radiation
tolerant transistor. This configuration has proven to be highly tolerant to both proton and total dose radiation. Available as
standard and high voltage and commercial or screened levels.
ABSOLUTE MAXIMUM RATINGS
Input Diode Forward DC Current........................................................................................................................................40 mA
Input Power Dissipation (Note 1) .....................................................................................................................................80 mW
Input-Output Isolation Voltage ………………………………………………………………………………………………….1000 V
Reverse Input Voltage ............................................................................................................................................................3 V
Collector-Base Voltage -00X, -10X.......................................................................................................................................40 V
Collector-Base Voltage -40X..............................................................................................................................................150 V
Collector-Emitter Voltage -00X, -10X ...................................................................................................................................40 V
Collector-Emitter Voltage -40X...........................................................................................................................................150 V
Emitter-Base Voltage -00X, -10X.............................................................................................................................................4 V
Emitter-Base Voltage -40X......................................................................................................................................................6 V
Continuous Collector Current .............................................................................................................................................50 mA
Continuous Transistor Power Dissipation (Note 2) ........................................................................................................300 mW
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Free-Air Temperature Range.............................................................................................................-55°C to +100°C
Lead Solder Temperature (10 seconds, 1/16” from case) ................................................................................................240°C
Notes:
1. Derate linearly 1.0 mW/°C above 25°C.
2. Derate linearly 4.0 mW/°C above 25°C.
Package Dimensions Schematic Diagram
0.365 [9.27]
0.355 [9.02]
0.328 [8.33]
0.318 [8.08]
0.172 [4.37]
0.162 [4.11]
0.500 [12.70]
MIN
0.040 [1.02]
MAX
0.039 [0.99]
0.029 [0.74]
0.036 [0.91]
0.026 [0.66]
45°
Ø0.200
[5.08]
6 LEADS
Ø0.019 [0.48]
Ø0.016 [0.41]
7
3
5
6
12
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
K 7
A 5
2 B
1 E
3 C
MICROPAC
OPTOELECTRONIC PRODUCTS
DIVISION
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66099 RADIATION TOLERANT TO-5 OPTOCOUPLER
09/09/03
INPUT DIODE CHARACTERISTICS TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Input Diode Static Reverse Current IR 100 µA VR = 2V
Input Diode Static Forward Voltage VF 0.8 2 V IF = 10mA
OUTPUT TRANSISTOR CHARACTERISTICS TA = 25°C unless otherwise noted
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Collector-Base Breakdown Voltage -00X
-10X
-40X V(BR)CBO 40
40
150
V IC = 100µA, IE = 0, IF = 0
Collector-Emitter Breakdown Voltage -00X
-10X
-40X V(BR)CEO
40
40
150
V IC = 1mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage -00X
-10X
-40X V(BR)EBO
4
4
6
V IC = 0mA, IE = 100µA, IF = 0
Collector-Emitter Cutoff Current ICEO 100 nA VCE = 20V
COUPLED CHARACTERISTICS TA = 25°C unless otherwise noted
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Current Transfer Ratio CTR 100 % VCE = 1V, IF = 10mA
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IF = 20 mA, IC = 10mA
Input-Output Isolation Voltage V I-O 1000 V II-O = 100 nA
Rise Time tr 20 µs VCC = 10V, IF = 10mA,
RL = 100Ω
Fall Time tf 20 µs VCC = 10V, IF = 10mA,
RL = 100Ω
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level IFL 0 10 µA
Input Current, High Level IFH 1 20 mA
Operating Temperature TA -55 100 °C
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
66099-003 Commercial
66099-101 Screened
66099-103 TX screening plus Group A
66099-105 TXV screening plus Group A
66099-401 High Voltage, Commercial
66099-415 High voltage, Screened
