54-94-104MT..KB Series
2
Bulletin I27504 08/97
www.irf.com
Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM /IDRMmax.
Type number Code repetitive peak non-repetitive peak peak off-state voltage, @ TJ = 125°C
reverse voltage reverse voltage gate open circuit
VVVmA
80 800 900 800
100 1000 1100 1000
54MT..KB 120 1200 1300 1200 20 *
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
100 1000 1100 1000
94/104MT..KB 120 1200 1300 1200 40 *
140 1400 1500 1400
160 1600 1700 1600
Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions
IOMaximum IRMS output current 50 90 10 0 A For all conduction angle
@ Case temperature 80 80 80 °C
ITSM Maximum peak, one-cycle 3 9 0 9 5 0 1130 A t = 10ms No voltage
forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied
on state surge current 33 0 80 0 9 50 t = 10ms 100% V RRM
345 840 1000 t = 8.3ms reapplied Initial
I2t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.
700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% V RRM
500 2920 4120 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 1.16 0.99 0.99 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.44 1.19 1.15 (I > π x IT(AV)), @ T J max.
voltage
rt1 Low level value on-state 12.54 4.16 3.90 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 11.00 3.56 3.48 (I > π x I T(AV)), @ TJ max.
slope resistance
VTM Maximum on-state voltage drop 2.68 1.55 1.53 V Ipk = 150A, TJ = 25°C
tp = 400µs single junction
di/dt Max. non-repetitive rate 150 A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x IT(AV),
of rise of turned on current Ig = 500mA,tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
mA resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
Forward Conduction
ELECTRICAL SPECIFICATIONS
Voltage Ratings
* For single AC switch