February 2017
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This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
www.st.com
SCT1000N170
Silicon carbide Power MOSFET 1700 V, 6 A, 1.4 Ω
(typ., TJ = 150 °C) in an HiP247™ package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
Features
Very tight variation of on-resistance vs.
temperature
Slight variation of switching losses vs.
temperature
Very high operating junction temperature
capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Applications
Auxiliary power supply for server
Switch mode power supply
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material, combined
with the device’s housing in the proprietary
HiP247™ package, allows designers to use an
industry standard outline with significantly
improved thermal capability. These features
render the device perfectly suitable for high-
efficiency and high power density applications.
Table 1: Device summary
Order code
Marking
Package
Packing
SCT1000N170
SCT1000N170
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 3: "Package information".
AM01475v1_noZen_noTab
D(2)
G(1)
S(3)
Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Package information ....................................................................... 9
3.1 HiP247™ package mechanical data ................................................. 9
4 Revision history ............................................................................ 11
SCT1000N170
Electrical ratings
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1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
1700
V
VGS
Gate-source voltage
-10 to 25
V
ID
Drain current (continuous) at TC = 25 °C
6
A
Drain current (continuous) at TC = 100 °C
5
IDM(1)
Drain current (pulsed)
12
A
PTOT
Total dissipation at TC = 25 °C
120
W
Tstg
Storage temperature range
-55 to 200
°C
Tj
Operating junction temperature range
°C
Notes:
(1)Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
1.46
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
Electrical characteristics
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2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
1700
V
IDSS
Zero gate voltage drain
current
VDS = 1700 V, VGS = 0 V
1
µA
VDS = 1700 V, VGS = 0 V,
TJ = 200 °C
10
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 22 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
2.1
3.5
V
RDS(on)
Static drain-source
on-resistance
VGS = 20 V, ID = 3 A
1
1.5
Ω
VGS = 20 V, ID = 3 A,
TJ = 150 °C
1.4
VGS = 20 V, ID = 3 A,
TJ = 200 °C
1.6
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 1000 V, f = 1 MHz,
VGS = 0 V
-
150
-
pF
Coss
Output capacitance
-
12
-
pF
Crss
Reverse transfer
capacitance
-
5
-
pF
Qg
Total gate charge
VDD = 1000 V, ID = 2 A,
VGS = 0 to 20 V
-
14
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
-
8
-
nC
Rg
Gate input resistance
f = 1 MHz, ID = 0 A
-
9.6
-
Ω
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Electrical characteristics
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Table 6: Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Turn-on switching energy
VDD = 1000 V, ID = 2 A,
RG= 6.8 Ω, VGS = -5 to 20 V
-
46
-
µJ
Eoff
Turn-off switching energy
-
11
-
µJ
Eon
Turn-on switching energy
VDD = 1000 V, ID = 2 A,
RG= 6.8 Ω, VGS = -5 to 20 V,
TJ = 150 °C
-
57
-
µJ
Eoff
Turn-off switching energy
-
13
-
µJ
Table 7: Reverse diode characteristics
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
VSD
Diode forward voltage
IF = 3 A, VGS = 0 V
-
4.2
-
V
trr
Reverse recovery time
ISD = 2 A, di/dt = 1000 A/µs,
VDD = 1000 V
-
22
-
ns
Qrr
Reverse recovery charge
-
76
-
nC
IRRM
Reverse recovery current
-
5.8
-
A
Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics (TJ= 25 °C)
Figure 5: Output characteristics (TJ= 200 °C)
Figure 6: Transfer characteristics
Figure 7: Power dissipation
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Electrical characteristics
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Figure 8: Gate charge vs gate-source voltage
Figure 9: Capacitance variations
Figure 10: Switching energy vs. drain current
Figure 11: Switching energy vs. junction
temperature
Figure 12: Normalized V(BR)DSS vs. temperature
Figure 13: Normalized gate threshold voltage vs.
temperature
Electrical characteristics
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Figure 14: Normalized on-resistance vs. temperature
Figure 15: Reverse conduction characteristics
(TJ= 25 °C)
Figure 16: Reverse conduction characteristics (TJ= 200 °C)
SCT1000N170
Package information
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3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
3.1 HiP247™ package mechanical data
Figure 17: HiP247™ package outline
Package information
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Table 8: HiP247™ package mechanical data
Dim.
mm.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
SCT1000N170
Revision history
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4 Revision history
Table 9: Document revision history
Date
Revision
Changes
29-Jul-2015
1
First release
10-Feb-2017
2
Updated title and features on cover page.
Updated Section 1: "Electrical ratings" and Section 2: "Electrical
characteristics".
Minor text changes
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