2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 2SD2114K 2.90.2 1.1+0.2 -0.1 1.90.2 0.80.1 0.95 0.95 (2) 00.1 2.80.2 1.6+0.2 -0.1 (1) +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 zStructure Epitaxial planar type NPN silicon transistor 0.30.6 (3) (1) Emitter (2) Base (3) Collector Abbreviated symbol: BB 2SD2144S 20.2 (15Min.) 3Min. 30.2 40.2 0.15 0.45+ -0.05 0.4 2.5 + -0.1 0.5 0.15 0.45 + -0.05 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 Denotes h (1) Emitter (2) Collector (3) Base FE zAbsolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V 0.5 A(DC) 1 A(Pulse) Collector current IC Collector power 2SD2114K dissipation 2SD2144S PC Junction temperature Tj 150 C Storage temperature Tstg -55+150 C Single pulse Pw=100ms 0.2 0.3 W 2SD2114K / 2SD2144S Transistors zElectrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 25 - - V IC=10A Collector-emitter breakdown voltage BVCEO 20 - - V IC=1mA Emitter-base breakdown voltage BVEBO 12 - - V IE=10A Collector cutoff current ICBO - - 0.5 A VCB=20V Emitter cutoff current IEBO - - 0.5 A VEB=10V IC/IB=500mA/20mA Parameter Collector-emitter saturation voltage VCE(sat) 2SD2114K DC current transfer ratio 2SD2144S hFE fT - 0.18 0.4 V 820 - 2700 - 560 - 2700 - Conditions VCE=3V, IC=10mA VCE=10V, IE=-50mA, f=100MHz - 350 - MHz Output capacitance Cob - 8.0 - pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron - 0.8 - pF IB=1mA, Vi=100mV(rms), f=1kHz Transition frequency Measured using pulse current zPackaging specifications and hFE Taping Package Type hFE 2SD2114K VW 2SD2144S UVW Code T146 TP Basic ordering unit (pieces) 3000 5000 - - hFE values are classified as follows : Item U V W hFE 5601200 8201800 12002700 zElectrical characteristic curves 1.6A 1.6 2.0A 1.4A 1.8A 1.2A 1.2 1.0A 0.8A 0.8 0.6A 0.4A 0.4 0.2A 0 0 IB=0 0.1 0.2 0.3 0.4 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics() 800 1000 1.8mA 2.0mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 600 0.6mA 400 0.4mA 0.2mA 200 0 0 2 Ta=25C Measured using IB=0mA pulse current. 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.2 Grounded emitter output characteristics() COLLECTOR CURRENT : IC(mA) 1000 Ta=25C COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) 2.0 VCE=3V Measured using pulse current. 500 200 100 Ta=100C 25C -25C 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE(V) Fig.3 Grounded emitter propagation characteristics 2SD2114K / 2SD2144S 1000 500 3V 1V 200 100 50 2000 1000 Ta=100C 25C -25C 500 200 100 50 20 10 VCE=3V Measured using pulse current. 5000 20 1 2 5 10 20 10 50 100 200 500 1000 1 COLLECTOR CURRENT : IC(mA) 500 200 100 Ta=100C 25C -25C 50 20 10 5 2 1 2 5 10 20 50 100 200 5001000 Ta=25C VCE=10V Measured using pulse current. 5000 2000 1000 500 200 100 50 20 10 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 EMITTER CURRENT : IE(mA) Fig.10 Gain bandwidth product vs. emitter current 500 1000 Ta=25C Measured using pulse current. 1000 500 200 100 50 IC/IB=100 50 25 20 10 10 5 2 1 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 50 100 200 5001000 lC/lB=10 Measured using pulse current. 5000 Ta=-25C 25C 100C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.8 Base-emitter saturation voltage vs. collector current() Ta=25C f=1MHz IE=0A 500 10 20 10000 COLLECTOR CURRENT : IC(mA) 1000 5 Fig.6 Collector-emitter saturation voltage vs. collector current() IC/IB=10 25 50 100 2000 2 COLLECTOR CURRENT : IC(mA) Ta=25C Pulsed 5000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) TRANSITION FREQUENCY : fT (MHz) 10000 50 100 200 10000 COLLECTOR CURRENT : IC(mA) Fig.7 Collector-emitter saturation voltage vs. collector current() 10 20 Fig.5 DC current gain vs. collector current() BASE SATURATION VOLTAGE : VBE(sat)(mV) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) IC/IB=25 Measured using pulse current. 1000 5 2000 COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current() 2000 2 BASE SATURATION VOLTAGE : VBE(sat) (mV) DC CURRENT GAIN : hFE 2000 10000 200 100 50 20 10 5 2 Fig.9 Base-emitter saturation voltage vs. collector current() 100 Ta=25C f=1kHz Vi=100mV(rms) RL=1k 50 ON RESISTANCE : Ron() Ta=25C Measured using pulse current. VCE=5V 5000 DC CURRENT GAIN : hFE 10000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Transistors 20 10 5 2 1 0.5 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.11 Collector output capacitance vs. collector-base voltage 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 BASE CURRENT : IB(mA) Fig.12 Output-on resistance vs. base current 10 2SD2114K / 2SD2144S Transistors zRon measurement circuit RL=1k Input vi 1kHz 100mV(rms) IB V Output v0 Ron= v0 vi-v0 xRL