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Preliminary Data Sheet
NESG210719
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
FEATURES
• The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr.
• 3-pin ultra super minimold (19, 1608 PKG)
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
NESG210719 NESG210719-A 50 pcs
(Non reel)
NESG210719-T1 NESG210719-T1-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.5 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot Note 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0051EJ0400
Rev.4.00
Sep 24, 2012
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R09DS0051EJ0400 Rev.4.00 Page 1 of 8
Sep 24, 2012
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 − − 100 nA
DC Current Gain hFE Note 1 VCE = 1 V, IC = 5 mA 140 180 220 −
RF Characteristics
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 7 10 − GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 20 mA, f = 2 GHz − 12 − GHz
Insertion Power Gain (1) ⏐S21e⏐2 VCE = 1 V, IC = 5 mA, f = 2 GHz 6.5 8 − dB
Insertion Power Gain (2) ⏐S21e⏐2 VCE = 1 V, IC = 20 mA, f = 2 GHz − 9 − dB
Noise Figure NF VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt − 0.9 1.5 dB
Associated Gain Ga VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt 6 9 − dB
Reverse Transfer Capacitance Cre Note 2 VCB = 1 V, IE = 0, f = 1 MHz − 0.5 0.7 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank FB/YFB
Marking D7
hFE Value 140 to 220
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NESG210719
R09DS0051EJ0400 Rev.4.00 Page 2 of 8
Sep 24, 2012
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
300
250
150
100
50
025 50 75 100 125 150
0.7
0.3
0.1
024681012
0.6
0.4
0.2
f = 1 MHz
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
VCE = 1 V
200 200 mW 0.5
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
VCE = 2 V
100
80
60
40
20
0213564
240 A
160 A
400 A
320 A
560 A
480 A
720 A
800 A
IB =
80 A
μ
μ
μ
μ
μ
μ
μ
640 A
μ
μ
μ
Total Power Dissipation Ptot (mW)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on glass epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
Ambient Temperature TA (˚C)
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
NESG210719
R09DS0051EJ0400 Rev.4.00 Page 3 of 8
Sep 24, 2012
V
CE
= 1 V
1 000
100
10
0.1 1 10 100
V
CE
= 2 V
1 000
100
10
0.1 1 10 100
V
CE
= 3 V
1 000
100
10
0.1 1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
20
18
16
14
12
10
8
6
4
2
01 10 100
V
CE
= 1 V
f = 2 GHz
20
18
16
14
12
10
8
6
4
2
01 10 100
V
CE
= 2 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
NESG210719
R09DS0051EJ0400 Rev.4.00 Page 4 of 8
Sep 24, 2012
35
25
20
15
10
5
0
30
V
CE
= 1 V
I
C
= 5 mA
0.1 1 10 100
|S
21e
|
2
35
25
20
15
10
5
0
30
V
CE
= 1 V
I
C
= 20 mA
0.1 1 10 100
|S
21e
|
2
35
25
20
15
10
5
0
30
V
CE
= 2 V
I
C
= 5 mA
0.1 1 10 100
35
25
20
15
10
5
0
30
V
CE
= 2 V
I
C
= 20 mA
0.1 1 10 100
|S
21e
|
2
|S
21e
|
2
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
MAG
MAG
MSG
MSG
MAG
MSG
MSG
MAG
MAG
MSG
MAG
MSG MAG
MSG
MSG
MAG
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Remark The graphs indicate nominal characteristics.
NESG210719
R09DS0051EJ0400 Rev.4.00 Page 5 of 8
Sep 24, 2012
25
20
15
10
5
01 10 100
V
CE
= 1 V
f = 1 GHz
|S
21e
|
2
15
10
5
0
−51 10 100
V
CE
= 1 V
f = 2 GHz
|S
21e
|
2
10
5
0
−51 10 100
V
CE
= 1 V
f = 4 GHz
|S
21e
|
2
20
15
10
5
01 10 100
V
CE
= 2 V
f = 1 GHz
|S
21e
|
2
20
15
10
5
01 10 100
V
CE
= 2 V
f = 2 GHz
|S
21e
|
2
10
5
0
−51 10 100
V
CE
= 2 V
f = 4 GHz
|S
21e
|
2
MAG
MSG
MAG
MSG
MAG
MAG
MSG
MAG
MSG
MAG
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Remark The graphs indicate nominal characteristics.
NESG210719
R09DS0051EJ0400 Rev.4.00 Page 6 of 8
Sep 24, 2012
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
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NESG210719
R09DS0051EJ0400 Rev.4.00 Page 7 of 8
Sep 24, 2012
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
0.75±0.05
0.6
0 to 0.1
0.15
+0.1
–0.05
1.6±0.1
1.0
0.50.5
0.3
+0.1
–0
1.6±0.1
0.8±0.1
0.2
+0.1
–0
1
2
3
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
D7
NESG210719
R09DS0051EJ0400 Rev.4.00 Page 8 of 8
Sep 24, 2012
Revision History NESG210719 Data Sheet
Description
Rev. Date Page Summary
0.01 Oct 15, 2003 – Preliminary edition issued
1.00 Oct 13, 2004 – First edition issued
2.00 Aug 23, 2005 – Second edition issued
3.00 Jan 21, 2008 – Third edition issued
4.00 Sep 24, 2012 Throughout The company name is changed to Renesas Electronics Corporation.
p.1 Modification of FEATURES
p.1 Modification of ORDERING INFORMATION
p.1 Modification of ABSOLUTE MAXIMUM RATINGS
p.2 Modification of ELECTRICAL CHARACTERIST ICS
p.2 Modification of hFE CLASSIFICATION
p.7 Modification of method for obtaining S-parameters
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