CNY17F No Base Connection Phototransistor Optocoupler * FEATURES * High Current Transfer Ratio CNY17F-1, 40-80% CNY17F-2, 63-125% CNY17F-3, 100-200% CNY17F-4, 160-320% * Breakdown Voltage, 5300 VRMS * High Collector-Emitter Voltage * VCEO=70 V * No Base Terminal Connection for Improved Common Mode Interface Immunity * Field-Effect Stable by TRIOS--TRansparent IOn Shield * Long Term Stability * Industry Standard Dual-in-Line Package * Underwriters Lab File #E52744 V * VDE #0884, Available with Option 1 D E Maximum Ratings TA=25C Emitter Reverse Voltage ............................................... 6.0 V DC Forward Current ...................................... 60 mA Surge Forward Current (t 10 s)..................... 2.5 A Total Power Dissipation ............................... 100 mW Detector Collector-Emitter Breakdown Voltage................ 70 V Collector Current ............................................ 50 mA Collector Current (t1.0 ms) ......................... 100 mA Total Power Dissipation ............................... 150 mW Package Isolation Test Voltage (between emitter and detector referred to standard climate 23/50 DIN 50014) .................... 5300 VRMS Creepage .................................................. 7.0 mm Clearance .................................................. 7.0 mm Isolation Thickness between Emitter and Detector .......................................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ....................... 175 Isolation Resistance (VIO=500 V) ............... 1011 Storage Temperature Range ............. -55 to +150C Ambient Temperature Range ............ -55 to +100C Junction Temperature..................................... 100C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) ........... 260C Dimensions in inches (mm) 3 2 pin one ID 1 .248 (6.30) .256 (6.50) 6 Base Anode 1 5 Collector Cathode 2 4 5 6 .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. 4 Emitter NC 3 .335 (8.50) .343 (8.70) .130 (3.30) .150 (3.81) 18 4 typ. .031 (0.80) min. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .114 (2.90) .130 (3.0) .100 (2.54) typ. DESCRIPTION The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY17 Series, the base terminal of the F type is not connected, resulting in a substantially improved common-mode interference immunity. Characteristics TA=25C Parameter Symbol Value Unit Condition Forward Voltage VF 1.25 (1.65) V IF=60 mA Breakdown Voltage VBR 6.0 IR=10 A Reverse Current IR 0.01 (10) A VR=6.0 V Capacitance CO 25 pF VR=0 V, f=1.0 MHz Thermal Resistance RthJA 750 K/W -- CCE 5.2 pF CBC 6.5 VCE=5.0 V, f=1.0 MHz CEB 7.5 RthJA 500 K/W -- Saturation Voltage, Collector-Emitter VCEsat 0.25 (0.4) V IF=10 mA IC=2.5 mA Coupling Capacitance CC 0.6 pF -- Emitter Detector Capacitance Thermal Resistance Package 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-72 March 17, 2000-13 Current Transfer Ratio IC/IF at VCE=5.0 V, 25C and Collector-Emitter Leakage Current by dash number -1 -2 -3 -4 Figure 3. Current transfer ratio versus diode current (TA=-25C, VCE=5.0 V) IC/IF=f (IF) Unit IC/IF at VCE=5.0 V (IF=10 mA) 40-80 63-125 100-200 160-320 IC/IF at VCE=5.0 V (IF=1.0 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) 2.0 ( 50) 2.0 ( 50) % 5.0 ( 100) nA 1 2 3 4 Figure 1. Linear operation (without saturation) RL=75 IF VCC=5 V IC 45 Figure 4. Current transfer ratio versus diode current (TA=0C, VCE=5.0 V) IC/IF=f (IF) IF=10 mA, VCC=5.0 V, TA=25C Load Resistance RL 75 W Turn-On Time tON 3.0 s Rise Time tr 2.0 Turn-Off Time tOFF 2.3 Fall Time tf 2.0 Cut-Off Frequency fCO 250 kHz 1 2 3 4 Figure 2. Switching operation (with saturation) IF 1K VCC=5 V 47 Figure 5. Current transfer ratio versus diode current (TA=25C, VCE=5.0 V) IC/IF=f (IF) -1 (IF=20 mA) -2 and -3 (IF=10 mA) -4 (IF=5.0 mA) Turn-On Time tON 3.0 4.2 6.0 Rise Time tr 2.0 3.0 4.6 Turn-Off Time tOFF 18 23 25 Fall Time tf 11 14 15 s 1 2 3 4 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) CNY17F 2-73 March 17, 2000-13 Figure 6. Current transfer ratio versus diode current (TA=50C) VCE=5.0 V Figure 9. Output characteristics CNY17F-2, -3 (TA=25C) IC=f(VCE) Figure 12. Saturation voltage current and modulation CNY17F-1 VCEsat=f (IC) (TA=25C) Figure 10. Forward voltage VF=f(IF) Figure 13. Saturation voltage versus collector current and modulation depth CNY17F-2 VCEsat=f (IC) (TA=25C) Figure 11. Collector emitter off-state current ICEO=f(V,T) (TA=75C, IF=0) Figure 14. Saturation voltage versus collector current and modulation depth CNY17F-3 VCEsat=f (IC) (TA=25C) 1 2 3 4 Figure 7. Current transfer ratio versus diode current (TA=75C) VCE=5.0 V 1 2 3 4 Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5.0 V) IC/IF=f (T) 4 3 2 1 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) CNY17F 2-74 March 17, 2000-13 Figure 15. Saturation voltage versus collector current and modulation depth CNY17F-4 VCEsat=f (IC) (TA=25C) Figure 17. Permissible power dissipation transistor and diode Ptot=f(TA) Figure 16. Permissible pulse load D=parameter, TA=25C, IF=f(tp) Figure 18. Permissible forward current diode IF=f(TA) 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) Figure 19. Transistor capacitance C=f(VO)(TA=25C, f=1.0 MHz) CNY17F 2-75 March 17, 2000-13