1
SEMICONDUCTORS
SUMMARY
BVCEO = 60V : RSAT = 30m ; IC= 5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers
extremely low on state losses making it ideal for use in DC-DC circuits and various
driving and power management functions.
FEATURES
•Extremely low equivalent on-resistance; RSAT = 30mV at 6A
•5 amps continuous current
•Up to 20 amps peak current
•Very low saturation voltages
•Excellent hFE characteristics up to 10 amps
APPLICATIONS
•Emergency lighting circuits
•Motor driving (including DC fans)
•Solenoid, relay and actuator drivers
•DC-DC modules
•Backlight inverters
•Power switches
•MOSFET gate drivers
DEVICE MARKING
851
ZXTN2010Z
ISSUE 1 - JUNE 2005
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY PER
REEL
ZXTN2010ZTA 7” 12mm
embossed 1,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT89
ZXTN2010Z
SEMICONDUCTORS
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PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R⍜JA 83 °C/W
Junction to ambient (b) R⍜JA 60 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO 150 V
Collector-emitter voltage BVCEO 60 V
Emitter-base voltage BVEBO 7V
Continuous collector current (a) IC5A
Peak pulse current ICM 20 A
Power dissipation at TA=25°C (a)
Linear derating factor PD1.5
12 W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD2.1
16.8 W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO 150 190 V IC=100␮A
Collector-emitter breakdown voltage BVCER 150 190 V IC=1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BVCEO 60 80 V IC=10mA*
Emitter-base breakdown voltage BVEBO 78.1 VI
E=100␮A
Collector cut-off current ICBO 20
0.5 nA
␮AVCB=120V
VCB=120V,Tamb=100⬚C
Collector cut-off current ICER
Rⱕ1k⍀
20
0.5 nA
␮AVCB=120V
VCB=120V,Tamb=100⬚C
Emitter cut-off current IEBO 10 nA VEB=6V
Collector-emitter saturation voltage VCE(SAT) 17
35
40
90
170
30
55
65
125
230
mV
mV
mV
mV
mV
IC=100mA, IB=5mA*
IC=1A, IB=100mA*
IC=1A, IB=50mA*
IC=2A, IB=50mA*
IC=6A, IB=300mA*
Base-emitter saturation voltage VBE(SAT) 970 1100 mV IC=6A, IB=300mA*
Base-emitter turn-on voltage VBE(ON) 910 1050 mV IC=6A, VCE=1V*
Static forward current transfer ratio HFE 100
100
55
20
200
200
105
40
300 IC=10mA, VCE=1V*
IC=2A, VCE=1V*
IC=5A, VCE=1V*
IC=10A, VCE=1V*
Transition frequency fT130 IC=100mA, VCE=10V
f=50MHz
Output capacitance COBO 31 pF VCB=10V, f=1MHz*
Switching times tON
tOFF
42
760 ns IC=1A, VCC=10V,
IB1=IB2=100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ISSUE 1 - JUNE 2005
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Telephone (44) 161 622 4444
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PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILS
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059
b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167
b1 - 0.53 - 0.021 E1 - 2.60 - 0.102
b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118
c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112
D 4.40 4.60 0.173 0.181 - ----
PACKAGE DIMENSIONS