TLP250
2004-06-25
1
TOSHIBA Photocoupler GaAlAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditionor
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8
−
lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: I
F
=5mA(max.)
• Supply current (I
CC
): 11mA(max.)
• Supply voltage (V
CC
): 10
−
35V
• Output current (I
O
): ±1.5A (max.)
• Switching time (t
pLH
/t
pHL
): 1.5µs(max.)
• Isolation voltage: 2500V
rms
(min.)
• UL recognized: UL1577, file No.E67349
• Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630V
PK
Highest permissible over voltage: 4000V
PK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)"
• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Schmatic Pin Configuration
(top view)
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V
O
(Output)
7 : V
O
8 : V
CC
1
2
3
4
2+
V
F
I
F
3-
I
CC
(T
r
1)
V
O
GND
(T
r
2)
I
O
V
O
V
CC
8
7
6
5
A
0.1µF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
Truth Table
Tr1 Tr2
On On Off
Input
LED Off Off On
Unit in mm
TOSHIBA 11−10C4
Weight: 0.54 g
TLP250
2004-06-25
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
20 mA
Forward current derating (Ta ≥ 70°C) ∆I
F
/ ∆Ta −0.36 mA / °C
Peak transient forward curent (Note 1) I
FPT
1 A
Reverse voltage V
R
5 V
LED
Junction temperature Tj 125 °C
“H”peak output current (P
W
≤ 2.5µs,f ≤ 15kHz) (Note 2) I
OPH
−1.5 A
“L”peak output current (P
W
≤ 2.5µs,f ≤ 15kHz) (Note 2) I
OPL
+1.5 A
(Ta ≤ 70°C) 35
Output voltage
(Ta = 85°C)
V
O
24
V
(Ta ≤ 70°C) 35
Supply voltage
(Ta = 85°C)
V
CC
24
V
Output voltage derating (Ta ≥ 70°C) ∆V
O
/ ∆Ta −0.73 V / °C
Supply voltage derating (Ta ≥ 70°C) ∆V
CC
/ ∆Ta −0.73 V / °C
Detector
Junction temperature Tj 125 °C
Operating frequency (Note 3) f 25 kHz
Operating temperature range T
opr
−20~85 °C
Storage temperature range T
stg
−55~125 °C
Lead soldering temperature (10 s) (Note 4) T
sol
260 °C
Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 5) BV
S
2500 Vrms
Note 1: Pulse width P
W
≤ 1µs, 300pps
Note 2: Exporenential wavefom
Note 3: Exporenential wavefom, I
OPH
≤ −1.0A( ≤ 2.5µs), I
OPL
≤ +1.0A( ≤ 2.5µs)
Note 4: It is 2 mm or more from a lead root.
Note 5: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Note 6: A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead
length between capacitor and coupler should not exceed 1cm.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Input current, on (Note 7) I
F(ON)
7 8 10 mA
Input voltage, off V
F(OFF)
0
―
0.8 V
Supply voltage V
CC
15
―
30 20 V
Peak output current I
OPH
/I
OPL
―
―
±0.5 A
Operating temperature T
opr
−20 25 70 85 °C
Note 7: Input signal rise time (fall time) < 0.5 µs.
TLP250
2004-06-25
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Electrical Characteristics
(Ta = −20~70°C, unless otherwise specified)
Characteristic Symbol
Test
Cir−
cuit
Test Condition Min. Typ.* Max. Unit
Input forward voltage V
F
― I
F
= 10 mA , Ta = 25°C 1.6 1.8 V
Temperature coefficient of
forward voltage ∆V
F
/ ∆Ta ― I
F
= 10 mA ― −2.0 ― mV / °C
Input reverse current I
R
― V
R
= 5V, Ta = 25°C ― 10 µA
Input capacitance C
T
― V = 0 , f = 1MHz , Ta = 25°C ― 45 250 pF
“H” level I
OPH
3 I
F
= 10 mA
V
8−6
= 4V −0.5 −1.5 ―
Output current
“L” level I
OPL
2
V
CC
= 30V
(*1) I
F
= 0
V
6−5
= 2.5V 0.5 2 ―
A
“H” level V
OH
4
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, I
F
= 5mA 11 12.8 ―
Output voltage
“L” level V
OL
5
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, V
F
= 0.8V ― −14.2 −12.5
V
V
CC
= 30V, I
F
= 10mA
Ta = 25°C ― 7 ―
“H” level I
CCH
―
V
CC
= 30V, I
F
= 10mA ― ― 11
V
CC
= 30V, I
F
= 0mA
Ta = 25°C 7.5
Supply current
“L” level I
CCL
―
V
CC
= 30V, I
F
= 0mA ― ― 11
mA
Threshold input
current
“Output
L→H” I
FLH
― V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, V
O
> 0V
― 1.2 5 mA
Threshold input
voltage
“Output
H→L” I
FHL
― V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω, V
O
< 0V 0.8 ― ― V
Supply voltage V
CC
― 10 ― 35 V
Capacitance
(input−output) C
S
― V
S
= 0 , f = 1MHz
Ta = 25℃
― 1.0 2.0 pF
Resistance(input−output) R
S
― V
S
= 500V , Ta = 25°C
R.H.≤ 60% 1×10
12
10
14
― Ω
* All typical values are at Ta = 25°C (*1): Duration of I
O
time ≤ 50µs
TLP250
2004-06-25
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Switching Characteristics
(Ta = −20~70°C , unless otherwise specified)
Characteristic Symbol
Test
Cir−
cuit
Test Condition Min. Typ.* Max. Unit
L→H t
pLH
― 0.15 0.5
Propagation
delay time H→L t
pHL
― 0.15 0.5
Output rise time t
r
― ― ―
Output fall time t
f
6
I
F
= 8mA (Note 7)
V
CC1
= +15V, V
EE1
= −15V
R
L
= 200Ω
― ― ―
µs
Common mode transient
immunity at high level
output
C
MH
7
V
CM
= 600V, I
F
= 8mA
V
CC
= 30V, Ta = 25°C −5000 ― ― V / µs
Common mode transient
immunity at low level
output
C
ML
7
V
CM
= 600V, I
F
= 0mA
V
CC
= 30V, Ta = 25°C 5000 ― ― V / µs
* All typical values are at Ta = 25°C
Note 7: Input signal rise time (fall time) < 0.5 µs.
TLP250
2004-06-25
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Test Circuit 1 : Test Circuit 2 : IOPL
Test Circuit 3 : IOPH Test Circuit 4 : VOH
Test Circuit 5 : V
OL
8
1
4
V
CC
0.1µF
I
OPL
A
V
6-5
8
1
4
V
CC1
0.1µF
V
OL
V
F
R
L
V
EE1
V
5
1
4
8
8
1
4
V
CC
0.1µF
I
OPH
V
8-6
I
F
8
1
4
V
CC1
0.1µF
V
OH
V
I
F
R
L
V
EE1
A
TLP250
2004-06-25
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Test Circuit 6: t
pLH
, t
pHL
, t
r
t
f
Test Circuit 7: C
MH
, C
ML
C
ML
(C
MH
) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
voltage in the low (high) state.
V
EE1
V
CC1
V
O
R
L
0.1µF
8
I
F
100Ω
V
O
I
F
V
O
V
OH
GND
V
OL
80%
80%
t
p
LH t
p
HL
t
r
t
f
V
CM
90%
V
O
600V
C
MH
C
HL
10% t
r
t
f
26V
3V
SW :A(I
F
=8mA)
SW :B(I
F
=0)
0.1µF
8
V
CC
V
O
1
4
V
CM
+ -
A B
SW I
F
C
ML =
C
MH =
480 (V)
t
r
(
µ
s
)
t
f
(
µ
s
)
480 (V)
TLP250
2004-06-25
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I
F
– V
F
Forward voltage V
F
(V)
Forward current I
F
(mA)
100
1.0
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.2 1.4 1.6 1.8 2.0
Ta = 25 °C
I
F
– Ta
Ambient temperature Ta (°C)
Allowable forward current
I
F
(mA)
40
0
0 100
20 40 60 80
10
20
30
V
CC
– Ta
Ambient temperature Ta (°C)
Allowable supply voltage V
CC
(V)
40
0
0 100
20 40 60 80
10
20
30
I
OPH,
I
OPL
– Ta
Ambient Temperature Ta (°C)
Allowable peak output current
I
OPH,
I
OPL
(A)
0
0 100
20 40 60 80
1
2
PW ≦ 2.5 µs, f ≦ 15 KHz
ΔV
F
/ ΔTa
– I
F
Forward current I
F
(mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
-1.4
0.1 0.3 0.5 1 3 5 10 30
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
TLP250
2004-06-25
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• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed
by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility
of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire
system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life,
bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the
“Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products
are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a
malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include
atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products
listed in this document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under
any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or
dissolve chemically.
RESTRICTIONS ON PRODUCT USE
