Semiconductor Components Industries, LLC, 2002
August, 2002 – Rev. 1 1Publication Order Number:
MUR180E/D
MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODE
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
•10 mjoules Avalanche Energy Guaranteed
•Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
•Ultrafast 75 Nanosecond Recovery Time
•175°C Operating Junction Temperature
•Low Forward Voltage
•Low Leakage Current
•High Temperature Glass Passivated Junction
•Reverse Voltage to 1000 Volts
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 0.4 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
•Shipped in plastic bags, 1000 per bag
•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to
the part number
•Polarity: Cathode Indicated by Polarity Band
•Marking: MUR180E, MUR1100E
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR180E
MUR1100E
VRRM
VRWM
VR800
1000
V
Average Rectified Forward Current
(Note 1.) (Square Wave Mounting
Method #3 Per Note 3.)
IF(AV) 1.0 @
TA = 95°CA
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
IFSM 35 A
Operating Junction Temperature and
Storage Temperature Range TJ, Tstg –65 to
+175 °C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.
Device Package Shipping
ORDERING INFORMATION
MUR180ERL Axial Lead 5000/Tape & Reel
MUR180E Axial Lead 1000 Units/Bag
ULTRAFAST
RECTIFIERS
1.0 AMPERES
800–1000 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
AXIAL LEAD
CASE 059–10
PLASTIC
MARKING DIAGRAM
MUR1x0E
MUR1x0E = Device Code
x = 8 or 10
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MUR1100E Axial Lead 1000 Units/Bag
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THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction to Ambient RJA See Note 3. °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)
vF1.50
1.75
Volts
Maximum Instantaneous Reverse Current (Note 2.)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 25°C)
iR600
10
A
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/s)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
trr 100
75
ns
Maximum Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V) tfr 75 ns
Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 10 mJ
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.
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ELECTRICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.90.5 1.3
3.0
0.01
0.03
0.02
0.2
0.1
20
2.0
0.7
0.3
0.05
0.5
5.0
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
2.3
VR, REVERSE VOLTAGE (VOLTS)
0 300200 500 600
1000
0.1
0.01
10
100
TJ = 175°C
IR
100 400 1000
Figure 2. Typical Reverse Current*
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0
1.0
2.0
3.0
4.0
5.0
PF(AV)
0
0.5 1.0 1.5 2.0 2.5
TA, AMBIENT TEMPERATURE (°C)
050
0
2.0
1.0
3.0
5.0
4.0
I
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
Figure 4. Power Dissipation
0
3.0
10
20
2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
0.7
0.07
1.0
7.0
1.7 2.1
100°C
TJ = 175°C25°C
800 900700
1.0
, REVERSE CURRENT ( A)
100°C
25°C
150100 200
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
C, CAPACITANCE (pF)
, AVERAGE POWER DISSIPATION (WATTS)
TJ = 25°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
30 40 50
7.0
5.0
TJ = 175°C
RATED VR
RJA = 50°C/W
dc
SQUARE WAVE
(CAPACITIVELOAD)
IPK
IAV 20
SQUARE WAVE
dc
5.010
1.1 1.5 1.9
10
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MERCURY
SWITCH
VD
ID
DUT
40 mH COIL
+VDD
IL
S1
BVDUT
ILID
VDD
t0t1t2t
Figure 6. Test Circuit Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S 1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly , due to di/dt ef fects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal t o the ener gy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed b y the supply during breakdown is small and the
total ener gy can be assumed to be nearly equal to the ener gy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
WAVAL 1
2LI2
LPKBVDUT
BVDUT–VDD
WAVAL 1
2LI2
LPK
Figure 8. Current–Voltage Waveforms
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
TIME BASE:
20 s/DIV.
EQUATION (1):
EQUATION (2):
CH1 CH2 REF REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1 217:33 HRS
STACK
A20s 953 V VERT500V
50mV
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5
Lead Length, L
Mounting
Method 1/8 1/4 1/2 Units
1
2
3
52
67
RJA
65 72
80 87
50
°C/W
°C/W
°C/W
TYPICAL VALUES FOR RJA IN STILL AIR
Data shown for thermal resistance junction to
ambient (RJA) for the mountings shown is to be
used as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
NOTE 3. — AMBIENT MOUNTING DATA
MOUNTING METHOD 1
MOUNTING METHOD 2
MOUNTING METHOD 3
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
L L
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
L L
Vector Pin Mounting
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
L = 3/8
Board Ground Plane
P.C. Board with
1–1/2 X 1–1/2 Copper Surface″″
″
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PACKAGE DIMENSIONS
MINI MOSORB
CASE 59–10
ISSUE S
B
D
K
K
F
F
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A4.10 5.200.161 0.205
B2.00 2.700.079 0.106
D0.71 0.860.028 0.034
F--- 1.27--- 0.050
K25.40 ---1.000 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
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Notes
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MUR180E/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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