Datasheet V2019.1.0 G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Features * Rated to 650V at 20 Amps * Zero reverse recovery current * Zero forward recovery voltage * Temperature independent switching behaviour * High temperature operation * High frequency operation Key Characteristics VRRM 650 V IF, Tc157 10* A QC 36* nC ( * : for per leg **: for both legs) Benefits * Unipolar rectifier * Substantially reduced switching losses * No thermal run-away with parallel devices * Reduced heat sink requirements Applications : TO-247-2L * SMPS, e.g., CCM PFC; * Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. G3S06520B G3S06520B Package Type TO-247AB Marking G3S06520B (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current Symbol Value Unit VRRM 650 VRSM 650 VDC 650 40* 27* 10* 50* A 120* A 167* 71* -55 to 175 W W IF IFRM IFSM Power Dissipation PTOT Operating Junction Tj Storage Temperature Test Condition TC=25 TC=100 TC=157 TC=25, tp=10ms Half Sine WaveD=0.3 TC=25, tp=10ms Half Sine Wave TC=25 TC=110 A -55 to 175 Tstg M3 Screw 6-32 Screw Mounting Torque V 1 8.8 Nm lbf-in Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC G3S06520B Test Condition Value Typ. 0.91* 0.495** Unit /W (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions IF=10A, Tj=25 IF=10A, Tj=175 VR=650V, Tj=25 VR=650V, Tj=175 Numerical Typ. Max. 1.4 1.7 1.7 2.5 10 50 20 100 Unit V A VR=400V, Tj=150 Total Capacitive Charge QC 36 - VR=0V, Tj=25, f=1MHZ 690 730 VR=200V, Tj=25, f=1MHZ VR=400V, Tj=25, f=1MHZ 72 71 75 74 VR Qc = 0 Total Capacitance C C (V )dV nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : G3S06520B 2) Reverse IV characteristics as a function of Tj : (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode 3) Current Derating 4)Capacitance vs. reverse voltage : Package TO-247 G3S06520B (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G3S06520B (c)2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED