650V/ 20A Silicon Carbide Power Schottky Barrier Diode
Features
• Rated to 650V at 20 Amps
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
• High temperature operation
• High frequency operation
( * : for per leg ；**: for both legs)
Benefits
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications
• SMPS, e.g., CCM PFC;
• Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
G3S06520B ©2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Key Characteristics
V
RRM
650
V
I
F,
T
c≤
157
℃
10*
A
Q
C
36*
nC
Part No.
Package Type
Marking
G3S06520B
TO-247AB
G3S06520B
G3S06520B
Datasheet
V2019.1.0
封装: TO-247-2L
G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
Maximum Ratings
Thermal Characteristics
G3S06520B ©2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter Symbol Test Condition Value Unit
Repetitive Peak Reverse
Voltage
V
RRM
650
V
Surge Peak Reverse
Voltage
V
RSM
650
DC Blocking Voltage
V
DC
650
Continuous Forward
Current IF
T
C
=25℃
TC=100℃
TC=157℃
40*
27*
10*
A
Repetitive Peak Forward
Surge Current IFRM
T
C
=25℃, tp=10ms
，
Half Sine
Wave
，
D=0.3
50*
A
Non-repetitive Peak
Forward Surge Current
IFSM
T
C
=25℃, tp=10ms
，
Half Sine
Wave
120*
A
Power Dissipation PTOT
T
C
=25℃
167*
W
TC=110℃
71*
W
Operating Junction Tj
-55℃ to 175℃
℃
Storage Temperature Tstg
-55℃ to 175℃
℃
Mounting Torque
M3 Screw
6-32 Screw
1
8.8
Nm
lbf-in
Parameter Symbol Test Condition
Value
Unit
Typ.
Thermal resistance from
junction to case
Rth JC 0.91*
0.495**
℃
/W
G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
Electrical Characteristics
Performance Graphs
1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj :
G3S06520B ©2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Parameter Symbol Test Conditions
Numerical
Unit
Typ.
Max.
Forward Voltage
V
F
IF=10A, Tj=25
℃ 1.4
1.7
V
IF=10A, Tj=175
℃
1.7
2.5
Reverse Current
I
R
VR=650V, Tj=25
℃
10
50
µA
VR=650V, Tj=175
℃
20
100
Total Capacitive Charge QC
VR=400V, Tj=150℃
dVVCQc VR )(
0
∫
=
36 - nC
Total Capacitance C
V
R
=0V, T
j
=25
℃
, f=1MHZ
690 730
pF
V
R
=200V, T
j
=25
℃
, f=1MHZ
72
75
VR=400V, Tj=25
℃
, f=1MHZ
71
74
G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
3) Current Derating 4)Capacitance vs. reverse voltage :
Package TO-247
G3S06520B ©2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
G3S06520B 650V/ 20A Silicon Carbide Power Schottky Barrier Diode
G3S06520B ©2019 Global Power Technology Company Ltd - ALL RIGHTS RESERVED
Note: The levels of RoHS restricted materials in this product are below the maximum concentration
values (also referred to as the threshold limits) permitted for such substances, or are used in an
exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and
other certifications can be obtained from GPT sales representatives or GPT
website: http://globalpowertech.cn/English/index.asp
More product datasheets and company information can be found in:
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