LTC4041
16
Rev A
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OPERATION
At the onset of backup mode, the supercapacitor charger
shuts off and the external NMOS pass transistors (MN1
and MN2 in the Block Diagram) are quickly turned off by
discharging the IGATE pin to ground, thereby disconnect-
ing the system output VSYS from the input and activat-
ing the backup boost converter to promptly deliver load
from the supercapacitor. Although the power-fail com-
parator has a hysteresis of approximately 40mV, it may
not be able to overcome the input voltage spike resulting
from the sudden collapse of the forward current from the
input to VSYS. To prevent repetitive mode switching, the
backup boost stays on for at least the minimum backup
time (tMIN-BACKUP) once activated. The minimum backup
time is programmed by connecting an external capacitor
between the CPF pin and ground. Refer to Programming
the Minimum Backup Time section in the Applications
Information. During this time, the power-fail comparator
output is ignored and an internal switch of approximately
270Ω pulls down the OVSNS pin to help discharge the
input. After the minimum backup time has elapsed, if the
power-fail comparator output indicates that power is still
not available, the backup boost continues to deliver the
load but the pull-down on the OVSNS pin is released.
When the power-fail comparator detects that input power
is available, the OVP charge pump starts to charge up
the IGATE pin but the backup boost converter continues
to deliver system load until IGATE is approximately 8V.
This ensures that the forward conduction path through
the external NMOS pass transistors has been established.
At this point, the backup boost gets deactivated and the
charger turns back on to charge the supercapacitor while
the system load gets delivered directly from the input to
VSYS through the pass transistors.
OPTIONAL INPUT OVERVOLTAGE PROTECTION (OVP)
The LTC4041 can protect itself from the inadvertent appli-
cation of excessive voltage with just two external com-
ponents: an N-channel FET (MN1) and a 6.2k resistor as
shown in the Block Diagram. The maximum safe overvolt-
age magnitude is determined by the choice of external
NMOS and its associated drain breakdown voltage.
The optional overvoltage protection (OVP) module con-
sists of two pins. The first, OVSNS, is used to measure the
applied voltage through an external resistor. The second,
IGATE, is an output used to drive the gate pins of two
external N-channel FETs, MN1 and MN2 (Block Diagram).
The voltage at the OVSNS pin will be lower than the OVP
input voltage by about 250mV due to the OVP circuit’s
quiescent current flowing through the OVSNS resistor.
When OVSNS is below 6V, an internal charge pump drives
IGATE to approximately 1.88 • V
OVSNS
. This enhances the
N-channel FETs providing a low impedance connection to
VSYS and power to the LTC4041. If OVSNS rises above 6V
due to a fault, IGATE is pulled down to ground, disabling
the external FETs to protect downstream circuitry. At the
same time, the backup boost converter activates to sup-
ply the system load from the supercapacitor. When the
voltage drops below 6V again, the external FETs are re-
enabled. If the OVP feature is not desired, remove MN1,
short OVSNS to V
IN
, and apply external power directly
to VIN.
SHUTDOWN MODE OPERATION
The LTC4041 can be shutdown almost entirely by pulling
both CHGEN and BSTEN pin above 1.2V. In this mode,
the internal charge pump is shutdown and IGATE is pulled
to ground disconnecting the forward path from input to
output via the external FETs. Only the internal OVP shunt
regulator remains active to monitor the input supply for
any possible overvoltage condition and consuming about
25μA via the OVSNS pin. Total current draw from the
SCAP pin drops to below 1μA (VSCAP = 2.5V) in shutdown.
Overtemperature (OT) Protection
When the LTC4041 die temperature exceeds 160°C (typi-
cal), the buck charger and backup boost are shut down
to prevent any thermal damage and remain in shutdown
until the die temperature falls to 145°C (typical). In OT,
the forward path from VIN to VSYS is disconnected by
pulling the gate voltage of the external FET(s) to ground.