AP5000A-00 SILICON PIN DIODE PACKAGE STYLE 00 DESCRIPTION: The AP5000A-00 is a Passivated Epitaxial Silicon PIN Diode. This Device is Designed to Cover a Wide Range of control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. MAXIMUM RATINGS IC 100 mA VCE 500 V PDISS 250 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +175 C R 18 C/W NONE CHARACTERISTICS SYMBOL TEST CONDITIONS VB IR = 10 A CJ VR = 6.0 V RS TC = 25 C MINIMUM TYPICAL MAXIMUM V 500 f = 1.0 MHz IF = 20 mA 0.10 f = 1.0 GHz 2.0 IF = 100 mA 1.2 TL IF = 10 mA IR = 6.0 mA TS IF = 10 mA VR = 10 V 600 nS 30 M A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. pF nS 1200 I-REGION UNITS REV. A 1/1