A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
VB IR = 10 µA 500 V
CJ VR = 6.0 V f = 1.0 MHz
0.10 pF
RS IF = 20 mA f = 1.0 GHz
IF = 100 mA 2.0
1.2 Ω
TL IF = 10 mA IR = 6.0 mA 1200 nS
TS IF = 10 mA VR = 10 V 600 nS
I-REGION 30 µM
SILICON PIN DIODE
AP5000A-00
DESCRIPTION:
The AP5000A-00 is a Passivated
Epitaxial Silicon PIN Diode. This
Device is Designed to Cover a Wide
Range of control Applications Such as
RF Switching, Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXIMUM RATINGS
IC 100 mA
VCE 500 V
PDISS 250 mW @ TA = 25 °C
TJ -65 °C to +175 °C
TSTG -65 °C to +175 °C
θR 18 °C/W
PACKAGE STYLE 00
