MOTOROLA Order this document by MAC223A6FP/D SEMICONDUCTOR TECHNICAL DATA MAC223AFP Series Triacs Silicon Bidirectional Triode Thyristors ISOLATED TRIACs THYRISTORS 25 AMPERES RMS 400 thru 800 VOLTS . . . designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are needed. * Off-State Voltages to 800 Volts * All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability * Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation * Gate Triggering Guaranteed in Four Modes MT2 MT1 MT1 MT2 CASE 221C-02 STYLE 3 G G MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Symbol Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) VDRM MAC223A6FP MAC223A8FP MAC223A10FP On-State RMS Current (TC = +80C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80C, preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) Peak Gate Power (t p 2 s) Average Gate Power (TC = +80C, t p 2 s) Peak Gate Voltage (t p 2 s) p 8.3 ms) Peak Gate Current (t RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature Storage Temperature Range Mounting Torque p 20%) Value Unit Volts 400 600 800 IT(RMS 25 Amps ITSM 250 Amps I2t 260 A2s PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps VGM "10 V(ISO 1500 Volts TJ -40 to +125 C Tstg -40 to +150 C -- 8 in. lb. Volts 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RJC 1.2 C/W Thermal Resistance, Case to Sink RCS 2.2 C/W Thermal Resistance, Junction to Ambient RJA 60 C/W Motorola Thyristor Device Data Motorola, Inc. 1999 1 ELECTRICAL CHARACTERISTICS (TC = 25C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current(1) (VD = Rated VDRM, Gate Open) Peak On-State Voltage (ITM = 35 A Peak, Pulse Width TJ = 25C TJ = 125C p 2 ms, Duty Cycle p 2%) Symbol Min Typ Max Unit IDRM -- -- -- -- 10 2 A mA VTM -- 1.4 1.85 Volts Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) IGT mA Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) (VD = Rated VDRM, TJ = 125C, RL = 10 k) MT(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) VGT -- -- 20 30 50 75 Volts -- -- 0.2 1.1 1.3 0.4 2 2.5 -- 0.2 0.4 -- Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) IH -- 10 50 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt -- 1.5 -- s dv/dt -- 40 -- V/s dv/dt(c) -- 5 -- V/s Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80C) 2 125 115 105 95 85 75 0 5 10 15 20 25 PD(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. 40 30 20 10 0 0 5 10 15 20 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 25 Motorola Thyristor Device Data VD = 12 V RL = 100 W 1 0.5 0.3 0.2 0.1 -60 NORMALIZED HOLD CURRENT NORMALIZED GATE VOLTAGE 3 2 -40 -20 0 20 40 60 80 100 120 1 0.5 0.3 0.2 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) Figure 3. Gate Trigger Current Figure 4. Gate Trigger Voltage ITM = 200 mA GATE OPEN 1 0.5 0.3 0.2 -40 VD = 12 V RL = 100 W TJ, JUNCTION TEMPERATURE (C) 2 0.1 -60 3 2 0.1 -60 140 -20 0 20 40 60 80 100 120 140 i TM , INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED GATE CURRENT TYPICAL CHARACTERISTICS 120 200 100 50 TJ = 25C 10 5 1 0.5 0.1 0 1 2 3 4 TJ, JUNCTION TEMPERATURE (C) vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Hold Current Figure 6. Typical On-State Characteristics Motorola Thyristor Device Data 140 3 PACKAGE DIMENSIONS -T- -B- F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. SEATING PLANE C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 -Y- K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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