1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full–wave silicon–
gate–controlled devices are needed.
•Off–State Voltages to 800 Volts
•All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
•Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
•Gate Triggering Guaranteed in Four Modes
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine W ave 50 to 60 Hz, Gate Open) MAC223A6FP
MAC223A8FP
MAC223A10FP
VDRM
400
600
800
Volts
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) IT(RMS 25 Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C,
preceded and followed by rated current) ITSM 250 Amps
Circuit Fusing (t = 8.3 ms) I2t 260 A2s
Peak Gate Power (t
p
2 µs) PGM 20 Watts
Average Gate Power (TC = +80°C, t
p
8.3 ms) PG(AV) 0.5 Watt
Peak Gate Current (t
p
2 µs) IGM 2Amps
Peak Gate Voltage (t
p
2 µs) VGM
"
10 Volts
RMS Isolation Voltage (T A = 25°C, Relative Humidity
p
20%) V(ISO 1500 Volts
Operating Junction Temperature TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
Mounting Torque — 8 in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W
Thermal Resistance, Case to Sink RθCS 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Order this document
by MAC223A6FP/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
MT1
G
MT2
MAC223AFP
Series
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
400 thru 800 VOLTS
MT1
MT2
G
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current(1) TJ = 25°C
(VD = Rated VDRM, Gate Open) TJ = 125°CIDRM —
——
—10
2µA
mA
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width
p
2 ms, Duty Cycle
p
2%) VTM —1.4 1.85 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
IGT
—
—20
30 50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+)
VGT
—
—
0.2
0.2
1.1
1.3
0.4
0.4
2
2.5
—
—
Volts
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open) IH— 10 50 mA
Gate Controlled T urn–On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt —1.5 — µs
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential W aveform, TC = 125°C) dv/dt — 40 — V/µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c) — 5 — V/µs
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation
IT(RMS), RMS ON–STATE CURRENT (AMPS)
15
105
85
75
1005
95
115
125
T
2520
IT(RMS), RMS ON–STATE CURRENT (AMPS)
150
40
20
10
0510
30
P
20 25
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
°
C
, AVERAGE POWER DISSIPATION (WATTS)
D(AV)
3
Motorola Thyristor Device Data
TYPICAL CHARACTERISTICS
Figure 3. Gate Trigger Current Figure 4. Gate Trigger Voltage
Figure 5. Hold Current Figure 6. Typical On–State Characteristics
vTM, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
0
100
10
1
0.1 1234
T
J
, JUNCTION TEMPERATURE (
°
C)
60–60
1
0.3
0.2
0.1 40–40 –20 0 20
0.5
2
3
NORMALIZED GATE CURRENT
i
50
5
0.5
200
TJ = 25
°
C
12010080 140
VD = 12 V
RL = 100
W
TJ, JUNCTION TEMPERATURE (
°
C)
60–60
1
0.3
0.2
0.1 40–40 –20 0 20
0.5
2
3
NORMALIZED GATE VOL TAGE
12010080 140
VD = 12 V
RL = 100
W
TJ, JUNCTION TEMPERATURE (
°
C)
60–60
1
0.3
0.2
0.1 40–40 –20 0 20
0.5
2
NORMALIZED HOLD CURRENT
12010080 140
ITM = 200 mA
GATE OPEN
, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TM
4 Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C-02
ISSUE B
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
–Y–
–B– –T–
Q
P
A
K
H
Z
GL
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
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MAC223A6FP/D
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