1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 1
March 2008
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
• General Purpose Diodes
• Fast switching Device( TRR < 4.0 ns )
• Very Small and Thin SMD package
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on F R-4 PCB minimum land pad.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VRSM Non-Repetitive Peak Reverse Voltage 100 V
VRRM Repetitive Peak Reverse Voltage 75 V
I FRM Repetitive Peak Forward Current 300 mA
IOContinuous Forward Current 150 mA
TJOperating Junction Temperature Range +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Unit
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
PDPower Dissipation(TC=25°C) 200 mW
Symbol Parameter Test Conditions Min Typ Max Units
BVRBreakdown Voltage IR = 100 μA
IR = 5 μA100
75 V
IRReverse Current VR = 20 V
VR = 75 V 25
5nA
μA
VFForward Voltage 1N4448WS/ 914BWS
1N4148WS
1N4448WS/ 914BWS
IF = 5 mA
IF = 10 mA
IF = 100 mA
0.62 0.72
1
1V
CODiode Capacitance VR = 0, f = 1 MHz 4pF
TRR Reverse Recovery Time I F = 10 mA, IR = 60mA
I RR = 1 mA, RL = 100 Ω4nS
SOD-323F
*Band Denotes Cathode
Device Marking Code
Device Type Device Marking
1N4148WS S1
1N4448WS S2
1N914BWS S3
1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 2
Typical Performance Characteristics
Total Capacitance
Reverse Voltage (V)
02468101214
0.44
0.46
0.48
0.50
0.52
0.54
0.56
0.58 TA=25°C
Capacitance [pF]
Forward Volta
g
e vs Ambient Tem
p
erature
Forward Current, IF
[
mA
]
0.01 0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Ta=-40°C
Ta=25°C
Ta=150°C
Typical
VF- Forward Voltage [V]
1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 3
Typical Performance Characteristics
Power Derating Curve
Tem
p
erature
[
°C
]
0 25 50 75 100 125 150 175
0
50
100
150
200
250
PD - Power Dissipation [mW]
Reverse Current vs Reve rse Vo ltage
Reverse Voltage, VR[V]
10 20 30 40 50 60 70 80 90 100
10-1
100
101
102
103
104
105
Ta=150°C
Ta=25°C
Ta=-40°C
Reverse Curr en t [nA]
1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 4
Typical Performance Characteristics
VR - Reverse Voltage
Reverse Voltage vs Reverse Current
Reverse Current, IR[µA]
110100
140
150
160
170 Ta=25°C
1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 5
Package Dimensions SOD-323F
1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes1N4148WS / 1N4448WS / 1N914BWS
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0 6
Rev. I31
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