High Speed InGaAs p-i-n Photodiode
13PD100-TO
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region
packaged in a TO-46 header, is the largest standard device enabling a 1 GHz frequency cutoff.
Planar semiconductor design and dielectric passivation provide low noise performance.
Reliability is assured by hermetic sealing and 100% purge burn-in ( 200oC, 15 hours, Vr = 20V
). Chips can also be attached and wire bonded to customer-supplied or other specified
packages. Headers are available with either a lensed or flat window cap.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters Test Conditions Min Typ Max Units
Operating Voltage - - - -20 Volts
Dark Current -5V - 0.5 2 nA
Capacitance -5V - 1.15 - pF
Responsivity 1300nm 0.8 0.90 - A/W
Rise/Fall - - - 0.5 ns
Frequency Response (-3dB) - 1.0 - GHz
Absolute Maximum Ratings
Reverse Voltage 30 Volts
Forward Current 10 mA
Reverse Current 500 µA
Operating Temperature -40oC to + 85oC
Storage Temperature -40oC to + 85oC
Soldering Temperature 250oC
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
