NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
1
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Feature
CAS Latency Frequency
Speed Sorts
(CL-tRCD-tRP)
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
-37B/-37BI
4-4-4
3C/-3CI
5-5-5
-25D/-25DI
6-6-6
-25C/-25CI(CL)
5-5-5
-BE
7-7-7
-BD
6-6-6
Parameter
max
min
max
min
max
min
max
min
max
Clock
266
125
400
125
400
125
533
125
533
MHz
tRCD
-
15
-
12.5
-
13.125
-
11.25
-
ns
tRP
-
15
-
12.5
-
13.125
-
11.25
-
ns
tRC
-
60
-
57.5
-
58.125
-
56.25
-
ns
tRAS
70K
45
70K
45
70K
45
70K
45
70K
ns
tCK(Avg.) @ CL3
8
5
8
5
8
5
8
5
8
ns
tCK(Avg.) @ CL4
8
3.75
8
3.75
8
3.75
8
3.75
8
ns
tCK(Avg.) @ CL5
-
3
8
2.5
8
2.5
8
2.5
8
ns
tCK(Avg.) @ CL6
-
2.5
8
-
-
2.5
8
1.875
8
ns
tCK(Avg.) @ CL7
-
-
-
-
-
1.875
8
1.875
8
ns
1.8V ± 0.1V Power Supply Voltage
4 internal memory banks
Programmable CAS Latency: 3,4, 5, 6 and 7
Programmable Additive Latency: 0, 1, 2, 3 and 4.
Write Latency = Read Latency -1
4 and 8 programmable Sequential / Interleave Burst
Programmable Burst Length:
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
4 bit prefetch architecture
1KB page size for X4 & x8
2KB page size for x16
4 internal memory banks
Data-Strobes: Bidirectional, Differential
Strong and Weak Strength Data-Output Driver
Auto-Refresh and Self-Refresh
Power Saving Power-Down modes
Industrial grade device support -40~95 Operating
t Temperature (-37BI/-3CI/-25DI/-25CI)
7.8 µs max. Average Periodic Refresh Interval
JEDEC Compliance
Packages:
60-Ball BGA for X4 & x8 components
84-Ball BGA for x16 component
RoHS Compliance-
NT5TU128M4CE/NT5TU64M8CE/NT5TU32M16CG
RoHS5 Compliance-
NT5TU32M16CF
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
2
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Description
The 512Mb Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing
536,870,912 bits. It is internally configured as a qual-bank DRAM.
The 512Mb chip is organized as either 32Mbit x 4 I/O x 4 banks, 16Mbit x 8 I/O x 4 banks or 8Mbit x 16 I/O x 4 banks
device.
The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write
latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment
and (5) an ODT (On-Die Termination) function.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are
latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended
DQS or differential DQS pair in a source synchronous fashion. A 14 bit address bus for x4 and x8 organized components
and a 13 bit address bus for x16 component which use for convey row, column, and bank address devices.
These devices operate with a single 1.8V ± 0.1V power supply and are available in BGA packages. An Auto-Refresh and
Self-Refresh mode is provided along with various power-saving power-down modes.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
3
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Pin Configuration 60 balls BGA Package (x4, x8)
< TOP View>
See the balls through the package
A
B
C
D
E
F
G
VDD
NC
NC
VSSQ
DQ1
VSSQ
VREF
CKE
A10/AP
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
A3
VDDQ
VDD
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
VSSQ
DQS
VDDQ
VSSDL
RAS
CAS
VDD
H
J
K
L
NC
VDDQ
VDDL
A7
A12VDD
BA0
A1
A5
A9
NCNC
A11
A6
A2
DQ2
A13
A8
A4
A0
NC
VDDQ
NC
VSS
NC
VSS
ODT
789321
x 4
A
B
C
D
E
F
G
x
8
1
VDD
DQ4
NU,/RDQS
VSSQ
DQ1
VSSQ
VREF
CKE
A10/ AP
2
VSS
DM/RDQS
VDDQ
DQ3
VSS
WE
BA 1
3 7 8 9
A3
VDDQ
VDD
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
VSSQ
DQS
VDDQ
VSSDL
RAS
CAS
VDD
H
J
K
L
DQ6
VDDQ
VDDL
A7
A12VDD
BA0
A1
A5
A9
NC NC
A11
A6
A2
DQ2
A8
A4
A0
DQ7
VDDQ
DQ5
VSS
NC
VSS
ODT
A13
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
4
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Pin Configuration 84 balls BGA Package (x16)
< TOP View>
See the balls through the package
A
B
C
D
E
F
G
H
J
K
L
x16
1
VDD
DQ14
VDDQ
DQ12
VDD
DQ4
NC
VSSQ
DQ9
VSSQ
NC
VSSQ
DQ1
VSSQ
VREF
CKE
A10/AP
2
VSS
UDM
VDDQ
DQ11
VSS
LDM
VDDQ
DQ3
VSS
WE
BA1
3 7 8 9
A3
VDDQ
DQ15
VDDQ
DQ13
VDDQ
VDD
UDQS
VSSQ
DQ8
VSSQ
LDQS
VSSQ
DQ0
VSSQ
CK
CK
CS
VSSQ
UDQS
VDDQ
DQ10
VSSQ
LDQS
VDDQ
VSSDL
RAS
CAS
VDD
M
N
P
R
DQ6
VDDQ
VDDL
A7
A12VDD
BA0
A1
A5
A9
NC NC
A11
A6
A2
DQ2
NC
A8
A4
A0
DQ7
VDDQ
DQ5
VSS
NC
VSS
ODT
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
5
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Input / Output Functional Description
Symbol
Type
Function
CK, C
Input
Clock: CK and C are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of C. Output
(read) data is referenced to the crossings of CK and C (both directions of crossing).
CKE
Input
Clock Enable: CKE high activates, and CKE low deactivates, internal clock signals
and device input buffers and output drivers. Taking CKE low provides Precharge
Power-Down and Self-Refresh operation (all banks idle), or Active Power-Down (row
Active in any bank). CKE is synchronous for power down entry and exit and for
Self-Refresh entry. CKE is asynchronous for Self-Refresh exit. After VREF has become
stable during the power on and initialization sequence, it must be maintained for proper
operation of the CKE receiver. For proper self-refresh entry and exit, VREF must
maintain to this input. CKE must be maintained high throughout read and write
accesses. Input buffers, excluding CK, C, ODT and CKE are disabled during Power
Down. Input buffers, excluding CKE, are disabled during Self-Refresh.
CS
Input
Chip Select: All commands are masked when CS is registered high. CS provides for
external rank selection on systems with multiple memory ranks. CS is considered part
of the command code.
RASCASE
Input
Command Inputs: RAS, CAS and E (along with CS) define the command being
entered.
DM, LDM, UDM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled high coincident with that input data during a Write access. DM is
sampled on both edges of DQS. Although DM pins are input only, the DM loading
matches the DQ and DQS loading. For x8 device, the function of DM or RDQS / RQDS
is enabled by EMRS command.
BA0 BA1
Input
Bank Address Inputs: BA# defines to which bank an Active, Read, Write or
Pre-charge command is being applied. Bank address also determines if the mode
register or extended mode register is to be accessed during a MRS or EMRS cycle.
A0 A13
Input
Address Inputs: Provides the row address for Activate commands and the column
address and Auto Pre-charge or Read/Write commands to select one location out of
the memory array in the respective bank. A10 is sampled during a Pre-charge
command to determine whether the precharge applies to one bank (A10=low) or all
banks (A10=high). If only one bank is to be precharged, the bank is selected by
BA0-BA1. The address inputs also provide the op-code during Mode Register Set
commands.A13 Row address use on x4 and x8 components only.
DQ
Input/output
Data Inputs/Output: Bi-directional data bus.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
6
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Symbol
Type
Function
DQS, (DQS)
LDQS, (DQS),
UDQS,(DQS)
Input/output
Data Strobe: output with read data, input with write data. Edge aligned with read
data, centered with write data. For the x16, LDQS corresponds to the data on LDQ0
LDQ7; UDQS corresponds to the data on UDQ8-UDQ15. The data strobes DQS,
LDQS, UDQS, and RDQS may be used in single ended mode or paired with the
optional complementary signals DQS, DQS, DQS to provide differential pair
signaling to the system during both reads and writes. An EMRS(1) control bit enables
or disables the complementary data strobe signals.
RDQS, (RDQS)
Input/output
Read Data Strobe: For x8 components a RDQS and RDQS pair can be enabled via
EMRS(1) for real timing. RDQS and RDQS is not support x16 components. RDQS
and RDQS are edge-aligned with real data. If enable RDQS and RDQS then DM
function will be disabled.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal
to the DDR2 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS, RDQS,
RDQS, and DM signal for x8 configuration. For x16 configuration ODT is applied to
each DQ, UDQS, DQS, LDQS, DQS, UDM and LDM signal. The ODT pin will be
ignored if the EMRS (1) is programmed to disable ODT.
NC
No Connect: No internal electrical connection is present.
VDDQ
Supply
DQ Power Supply: 1.8V ± 0.1V
VSSQ
Supply
DQ Ground
VDDL
Supply
DLL Power Supply: 1.8V ± 0.1V
VSSDL
Supply
DLL Ground
VDD
Supply
Power Supply: 1.8V ± 0.1V
VSS
Supply
Ground
VREF
Supply
SSTL_1.8 reference voltage
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
7
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Ordering Information
Standard Grade
Organization
Part Number
Package
Speed
Data Rate
(Mbps)
CL-TRCD-TRP
128M x 4
NT5TU128M4CE-37B
60-Ball BGA
533
4-4-4
NT5TU128M4CE-3C
667
5-5-5
NT5TU128M4CE-25D
800
6-6-6
NT5TU128M4CE-25C
800
5-5-5
NT5TU128M4CE-BE
1066
7-7-7
NT5TU128M4CE-BD
1066
6-6-6
64M x8
NT5TU64M8CE-37B
533
4-4-4
NT5TU64M8CE-3C
667
5-5-5
NT5TU64M8CE-25D
800
6-6-6
NT5TU64M8CE-25C/-25CL*
800
5-5-5
NT5TU64M8CE-BE
1066
7-7-7
NT5TU64M8CE-BD
1066
6-6-6
32M x 16
NT5TU32M16CG-37B
84-Ball BGA
533
4-4-4
NT5TU32M16CF-37B
533
4-4-4
NT5TU32M16CG-3C
667
5-5-5
NT5TU32M16CF-3C
667
5-5-5
NT5TU32M16CG-25D
800
6-6-6
NT5TU32M16CF-25D
800
6-6-6
NT5TU32M16CG-25C
800
5-5-5
NT5TU32M16CF-25C
800
5-5-5
NT5TU32M16CG-BE
1066
7-7-7
NT5TU32M16CG-BD
1066
6-6-6
Note:NT5TU64M8CE-25CL is IDD63 mA.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
8
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Industrial Grade
Organization
Part Number
Package
Speed
Data Rate
(Mbps)
CL-TRCD-TRP
64M x 8
NT5TU64M8CE-37BI
60-Ball BGA
533
4-4-4
NT5TU64M8CE-3CI
667
5-5-5
NT5TU64M8CE-25DI
800
6-6-6
NT5TU64M8CE-25CI
800
5-5-5
32M x 16
NT5TU32M16CG-37BI
84-Ball BGA
533
4-4-4
NT5TU32M16CF-37BI
533
4-4-4
NT5TU32M16CG-3CI
667
5-5-5
NT5TU32M16CF-3CI
667
5-5-5
NT5TU32M16CG-25DI
800
6-6-6
NT5TU32M16CF-25DI
800
6-6-6
NT5TU32M16CG-25CI
800
5-5-5
NT5TU32M16CF-25CI
800
5-5-5
Note:
1.”I” of Part Number (the last one digit) Stand for Industrial temp. (-40oC to 95oC)
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
9
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Block Diagram (128Mb x 4)
Receivers
2
DQS
CK, CK
DLL
RAS
CAS
CK
CS
WE
CK
Control Logic
Column-Address
Cou nter/Latch
Mode
11
Command
Deco de
A0-A13,
BA0, BA1
CKE
14
16
I/O Gating
DM Mask Log ic
Bank0
Memo ry
Array
(1638 4 x 512 x 16)
Sense Amp lifiers
Bank1 Bank2 Bank3
14
9
2
2
2
Refresh C ounter
4
44
Input
Register 1
1
1
11
16
16
4
16
Data
Mask
Data
CK,
COL 0,1
COL0 ,1
COL 0,1
MUX
DQS
Gener ator
1
1
4
16
DM
DQS
Read Latch
W rite
FIFO
&
Drivers
Colum n
Decoder
512
(x16)
Row-Address MUX
Registers
14
8192
Bank0
Row-Address Latch
& Decoder
16384
Address Register
Drivers
Bank C ontrol Logic
CK
4
4
DQS
DQS
1
1
4
4
4
44
4
4
4
AP
16
This Functional Block Diagram is intended to facilitate user understanding of the operation
of the device; it does not represent an actual circuit implementation.
DM is a unidirectional signal (input only), but is internally loaded to match the load of the
bidirectional DQ and DQS signals.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
10
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Block Diagram (64Mb x 8)
RAS
CAS
CK
CS
WE
CK
Control Logic
Column-Address
Cou nter/Latch
Mode
10
Comman d
Decode
A0-A13,
BA0, B A1
CKE
16
I/O Gating
DM Mask Logic
Bank0
Memory
Array
(163 84 x25 6x32)
Sense Amp lifiers
Ba nk1 Bank2 Bank3
14
8
2
2
2
Refresh C ounter
32
COL0,1
DQ0-DQ7,
DM
DQS
Colum n
Decoder
256
(x32)
Row-Address MUX
Registers
14
8192
Bank0
Row-Address Latch
& Decoder
16384
Address Register
Bank Contro l Logic
14
Receivers
1
DQS
CK, CK
DLL
8
88
Input
Register 1
1
1
11
32
4
32
Data
Mask
Data
CK,
COL 0,1
COL0 ,1
MUX
DQS
Generator
1
1
8
32
Read Latch
Write
FIFO
&
Drivers
Drivers
CK
8
8
DQS
1
1
8
8
8
88
8
8
8
DQS
AP
16
This Functional Block Diagram is intended to facilitate user understanding of the operation of
the device; it does not represent an actual circuit implementation.
DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-
rectional DQ and DQS signals.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
11
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Block Diagram (32Mb x 16)
RAS
CAS
CK
CS
WE
CK
Control Logic
Colum n-Address
Counter/Latch
Mode
10
Command
Decode
A0-A12,
BA0, BA1
CKE
15
I/O Gatin g
DM Mask Log ic
Bank0
Mem ory
Array
(8192 x 256 x 64)
Sense Amplifiers
Bank1 Ban k2 B ank 3
13
8
2
2
2
Refresh Counter
64
COL0
LDQ0-LDQ7
LDM
LDQS
Column
Decoder
256
(x64)
Row-Address MUX
Registers
13
16384
Bank0
Row-Address Latch
& Decoder
8192
Address Register
Bank Control Logic
13
Receivers
1
DQS
CK, CK
DLL
16
16 16
Input
Register 2
2
2
22
64
8
64
Data
Mask
Data
CK,
COL0,1
COL0,1
MUX
DQS
Generator
2
2
16
64
Read Latch
W rite
FIFO
&
Drivers
Drivers
CK
16
16
DQ S
2
2
16
16
16
16 16
16
16
16
LDQS
UDQS
UDQS
AP
15
UDQ0-UDQ7
UDM
This Functional Block Diagram is intended to facilitate user understanding of the operation
of the device; it does not represent an actual circuit implementation.
DM is a unidirectional signal (input only), but is internally loaded to match the load of the
bidirectional DQ and DQS signals.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
12
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Functional Description
The 512Mb DDR2 SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. The
512Mb DDR SDRAM is internally configured as a quad-bank DRAM.
The 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data-rate
architecture is essentially a 4n prefetch architecture, with an interface designed to transfer four data words per clock
cycle at the I/O pins. A single read or write access for the 512Mb DDR SDRAM consists of a single 4n-bit wide, one
clock cycle data transfer at the internal DRAM core and four corresponding n-bit wide, one-half clock cycle data
transfers at the I/O pins
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue
for the burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Activate
command, which is followed by a Read or Write command. The address bits registered coincident with the activate
command are used to select the bank and row to be accesses (BA0 & BA1 select the banks, A0-A13 select the row for
x4 and x8 components, A0-A12 select the row for x16 components). The address bits registered coincident with the
Read or Write command are used to select the starting column location for the burst access and to determine if the
Auto-Precharge command is to be issued.
Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command description and device operation.
Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation.
The following sequence is required for POWER UP and Initialization.
1. Apply power and attempt to maintain CKE below 0.2 * VDDQ and ODT* at a low state (all other inputs may be
undefined). The power voltage ramp time must be no greater than 20mS; and during the ramp,
VDD>VDDL>VDDQ and VDD-VDDQ<0.3 volts.
- VDD,VDDL and VDDQ are driven from a signle power converter output, AND
- VTT is limited to 0.95 V max, AND
- VREF tracks VDDQ/2
or
- Apply VDD without any slope reversal before or at the same time as VDDL.
- Apply VDDL without any slope reversal before or at the same time as VDDQ.
- Apply VDDQ without any slope reversal before or at the same time as VTT & VREF.
at least one of these two sets of conditions must be met.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
13
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
2. Start clock (CK, CK) and maintain stable condition.
3. For the minimum of 200uS after stable power and clock, then apply NOP or deselect & take CKE high.
4. Wait minimum of 400ns, then issue a Precharge-all command. NOP or deselect applied during 400ns period.
5. Issue EMRS(2) command. (To issue EMRS(2) command, provide “low” to BA0 and BA2 and “high” to BA1)
6. Issue EMRS(3) command. (To issue EMRS(3) command, provide “low” to BA2 and “high” to BA0 and BA1)
7. Issue EMRS command to enable DLL. (To issue “DLL Enable” command, provide “low” to A0 and
“high” to BA0 and “low” to BA1 ~ BA2 and A13)
8. Issue MRS command (Mode Register Set) for DLL reset. (To issue DLL reset command, provide “high”
to A8 and “low” to BA0 ~ BA2 and A13)
9. Issue Precharge-All command.
10. Issue 2 or more Auto-Refresh commands.
11. Issue a MRS command with low on A8 to initialize device operation. (i.e. to program operating parameters
with out resetting the DLL.)
12. At least 200 clocks after step 8, execute OCD Calibration (Off Chip Driver impedance adjustment). If OCD
calibration is not used, EMRS OCD Default command (A9=A8=A7=1) followed by EMRS OCD Calibration
Mode Exit command (A9=A8=A7=0) must be issued with other parameters of EMRS.
13. The DDR2 SDRAM is now read for normal operation.
* To guarantee ODT off, VREF must be valid and a low level must be applied to the ODT pin 13.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Example
CK, CK
1st Auto
refresh
MRS
PRE
ALL EMRS
CMD
2nd Auto
refresh
tRP tRP tRFC tRFC
Extended Mode
Register Set
with DLL enable
Mode Register Set
with DLL reset
PRE
ALL
tMRD tMRD
min. 200 cycles to
lock the DLL
CKE
Command
400 ns
MRS
NOP
tMRD
EMRS
Follow OCD
flowchart
ODT "low"
Follow OCD
flowchart
EMRS
Register Definition
Programming the Mode Registration and Extended Mode Registers
For application flexibility, burst length, burst type, CAS latency, DLL reset function, write recovery time (tWR) are user
defined variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable
function, additive CAS latency, driver impedance, ODT (On Die Termination), single-ended strobe and OCD (off chip
driver impedance adjustment) are also user defined variables and must be programmed with an Extended Mode
Register Set (EMRS) command. Contents of the Mode Register (MR) and Extended Mode Registers (EMR (#)) can be
altered by re-executing the MRS and EMRS Commands. If the user chooses to modify only a subset of the MRS or
EMRS variables, all variables must be redefined when the MRS or EMRS commands are issued. MRS, EMRS and DLL
Reset do not affect array contents, which mean re-initialization including those can be executed any time after
power-up without affecting array contents.
Mode Registration Set (MRS)
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls CAS latency,
burst length, burst sequence, test mode, DLL reset, tWR and various vendor specific options to make DDR2 SDRAM
useful for various applications. The default value of the mode register is not defined, therefore the mode register must be
written after power-up for proper operation. The mode register is written by asserting low on CS, RAS, CAS, E, BA0 and
BA1, while controlling the state of address pins A0 ~ A13. The DDR2 SDRAM should be in all banks precharged (idle)
mode with CKE already high prior to writing into the mode register. The mode register set command cycle time (tMRD) is
required to complete the write operation to the mode register. The mode register contents can be changed using the
same command and clock cycle requirements during normal operation as long as all banks are in the precharged state.
The mode register is divided into various fields depending on functionality. Burst length is defined by A0 ~ A2 with options
of 4 and 8 bit burst length. Burst address sequence type is defined by A3 and CAS latency is defined by A4 ~ A6. A7 is
used for test mode and must be set to low for normal MRS operation. A8 is used for DLL reset. A9 ~ A11 are used for
write recovery time (WR) definition for Auto-Precharge mode. With address bit A12 two Power-Down modes can be
selected, a “standard mode” and a “low-power” Power-Down mode, where the DLL is disabled. Addess bit A13 and all
“higher” address bits (including BA2) have to be set to “low” for compatibility with other DDR2 memory products with
higher memory densities.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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MRS Mode Register Operation Table (Address Input for Mode Set)
A0A1A2A3A4A5A6A7A8A9A10A11A12A13BA0BA1BA2
Address Field
B
L
A0A1A2
4010
8110
Burst Length
Burst
Type
A3
Sequential0
Interleav
e
1
Burst Type
CAS
Latency
A4A5A6
0000
1100
/ CAS Latency
010
110
001
101
011
111
6
2
MRS mode
BA0BA1
MR
00
EMR(1)
10
MRS mode
01
11 EMR(3)
EMR(2)
Active power down
exit time
A12
Fast exit (use tXARD)0
Slow exit (use tXARDS)
1
Active power down exit time
* *
WR(cycles )A9A10A11
Reserve
d
000
2100
Write recovery for autoprecharge
010
110
001
101
011
111
4
5
6
7
3
DLL
Reset
A8
NO0
YES
1
DLL Reset
ModeA7
Normal0
TEST
1
Mode
* BA2 and A13 are reserved for future use and must be set to
"0" when programming MR.
5
8
3
4
Reserved
DDR2-1066
DDR2-667
DDR2-800
DDR2-533
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Extended Mode Register Set EMRS (1) Programming
A0A1A2A3A4A5A6A7A8A9A10A11A12A13BA0BA1BA2
Address Field
DLL
Enable
A0
Enable
0
Disable1
DLL
Output Driver
Impedance Control
A1
Full strength
0
Reduced strength
1
D.I.C
Rtt (Nominal)A2A6
ODT Disabled00
75 ohm10
Rtt
01
11 50 ohm *2
150 ohm
MRS mode
BA0BA1
MR
00
EMR(1)
10
MRS mode
01
11 EMR(3)
EMR(2)
Qoff
* *
DQSA10
Enable0
Disable
1
DQS
*BA2 and A13 are reserved for future use and must be set to0 when programming the EMR(1).
*2 Mandatory for DDR2-1066
*3 When Adjust mode is issued, AL from previously set value must be applied.
*4 After setting to default, OCD calibration mode needs to be exited by settin gA9-A7 to 000.
*5 Output disabled DQs, DQSs, DQSs, RDQS, RDQS. This feature is used in conjunction with DIMM IDD
measurements when IDDQ is not desired to be included.
*6 If RDQS is enabled, the DM function is disabled. RDQS is active for reads and do not care for writes.
Additive
Latency
A3A4A5
0000
1100
010
110
001
101
011
111
3
4
2
Reserved
Additive Latency
5
Qoff *5A12
Output buffer enabled0
Output buffer disabled
1
RDQS Enable*6A11
Enable
0Disable
1
RDQS
OCD Calibration ProgramA7A8
OCD Calibration mode
exit; maintain setting
00
Drive(1)10
01
00 Adjust mode *3
Drive(0)
A9
0
0
0
1
11 OCD Calibration default*41
OCD Program
Reserved
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Extended Mode Register Set EMRS (1)
The extended mode register EMRS(1) stores the data for enabling or disabling the DLL, output driver strength, additive
latency, ODT, DQS disable, OCD program, RQDS enable. The default value of the extended mode register EMRS(1) is
not defined, therefore the extended mode register must be written after power-up for proper operation. The extended
mode register is written by asserting low on CS, RAS, CAS, E, BA1 and high on BA0, while controlling the state of the
address pins. The DDR2 SDRAM should be in all bank precharge with CKE already high prior to writing into the
extended mode register. The mode register set command cycle time (tMRD) must be satisfied to complete the write
operation to the EMRS (1). Mode register contents can be changed using the same command and clock cycle
requirements during normal operation as long as all banks are in precharge state. A0 is used for DLL enable or disable.
A1 is used for enabling a half strength output driver. A3-A5 determines the additive latency, A7-A9 are used for OCD
control, A10 is used for DQS disable and A11 is used for RDQS enable. A2 and A6 are used for ODT setting.
Single-ended and Differential Data Strobe Signals
The following table lists all possible combinations for DQS, DQS, RDQS, RDQS which can be programmed by A10 &
A11 address bits in EMRS(1). RDQS and RDQS are available in x8 components only. If RDQS is enabled in x8
components, the DM function is disabled. RDQS is active for reads and don‟t care for writes.
EMRS(1)
Strobe Function Matrix
A11
(RDQS Enable)
A10
(DQS Enable)
RDQS/DM
RDQS
DQS
DQS
Signaling
0 (Disable)
0 (Enable)
DM
Hi-Z
DQS
DQS
differential DQS signals
0 (Disable)
1 (Disable)
DM
Hi-Z
DQS
Hi-Z
single-ended DQS signals
1 (Enable)
0 (Enable)
RDQS
RDQS
DQS
DQS
differential DQS signals
1 (Enable)
1 (Disable)
RDQS
Hi-Z
DQS
Hi-Z
single-ended DQS signals
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering
Self-Refresh operation and is automatically re-enabled and reset upon exit of Self-Refresh operation. Any time
the DLL is reset, 200 clock cycles must occur before a Read command can be issued to allow time for the
internal clock to be synchronized with the external clock. Less clock cycles may result in a violation of the
tAC or tDQSCK parameters.
Output Disable (Qoff)
Under normal operation, the DRAM outputs are enabled during Read operation for driving data (Qoff bit in the EMRS (1)
is set to 0). When the Qoff bit is set to 1, the DRAM outputs will be disabled. Disabling the DRAM outputs allows users to
measure IDD currents during Read operations, without including the output buffer current and external load currents.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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EMRS(2) Extended Mode Register Set Programming
Address Field
Extended Mode
Register
1PASR***
BA1BA0A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0*
A2 A1 A0 Partial Array Self Refresh
0 0 0 Full array
0 0 1 Half Array (BA[2:0]=000,001,010, &011)
0 1 0 Quarter Array (BA[2:0]=000&001)
0 1 1 1/8th array (BA[2:0] = 000)
1 0 0 3 / 4 array (BA[2:0]=010,011,100,101,110, &111)
1 0 1 Half array (BA[2:0]=100,101,110, & 111)
1 1 0 Quarter array (BA[2:0]=110&111)
1 1 1 1/8th array (BA[2:0]=111)
0SRF
A7
0 Disable
1 Enable** (85C Tcase 95C)
High Temperature Self-Refresh Rate Enable
A12
0*
BA2
0*
BA0MRS mode
0 MRS
1EMRS(1)
BA1
0
0
1
11
0EMRS(2)
EMRS(3):
Reserved
* The rest bits in EMRS(2) is reserved for future use and all bits in EMRS(2) except A0-A2,A7,BA0, and
BA1 must be programmed to 0 when setting EMRS(2) during initialization.
** DDR2 SDRAM Module user can look at module SPD field Byte 49 bit [0].
*** Optional. If PASR(Partial Array Self Refresh) is enabled, data located in areas of the array beyond the
spec. location will be lost if self refresh is entered.
Extended Mode Register Set EMRS (2)
The Extended Mode Registers (2) controls refresh related features. The default value of the extended mode register(2)
is not defined, therefore the extended mode register(2) is written by asserting low on CS, RAS, CAS, WE, BA0, high on
BA1, while controlling the states of address pin A0-A13. The DDR2 SDRAM should be in all bank pre-charge with CKE
already high prior to writing into the extended mode register (2). The mode register set command cycle time (tMRD)
must be satisfied to complete the write operation to the extended mode register (2). Mode register contents can be
changed using the same command and clock cycle requirements during normal operation as long as all banks are in
the precharge state.
EMRS(3) Extended Mode Register Set Programming
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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All bits in EMRS(3) expect BA0 and BA1 are reserved for future use and must be programmed to 0 when setting the
mode register during initialization.
Off-Chip Driver (OCD) Impedance Adjustment
DDR2 SDRAM supports driver calibration feature and the flow chart below is an example of the sequence. Every
calibration mode command should be followed by “OCD calibration mode exit” before any other command being issued.
MRS should be set before entering OCD impedance adjustment and ODT (On Die Termination) should be carefully
controlled depending on system environment.
Start
EMRS: Drive(1)
DQ & DQS High; DQSLow
Test
EMRS :
Enter Adjus t Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: Drive(0)
DQ & DQS Low; DQSHigh
Test
EMRS :
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
End
ALL OK ALL OK
Need Calibration
EMRS: OCD calibration mode exit
MRS should be set before entering OCD impedance adjustment and ODT should
be carefully controlled depending on system environment
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
Need Calibration
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Extended Mode Register Set for OCD impedance adjustment
OCD impedance adjustment can be done using the following EMRS (1) mode. In drive mode all outputs are driven out by
DDR2 SDRAM and drive of RDQS is dependent on EMRS (1) bit enabling RDQS operation. In Drive (1) mode, all DQ,
DQS (and RDQS) signals are driven high and all DQS (and RDQS) signals are driven low. In Drive (0) mode, all DQ, DQS
(and RDQS) signals are driven low and all DQS (and RDQS) signals are driven high. In adjust mode, BL = 4 of operation
code data must be used. In case of OCD calibration default, output driver characteristics have a nominal impedance
value of 18 Ohms during nominal temperature and voltage conditions. Output driver characteristics for OCD calibration
default are specified in the following table. OCD applies only to normal full strength output drive setting defined by EMRS
(1) and if half strength is set, OCD default driver characteristics are not applicable. When OCD calibration adjust mode is
used, OCD default output driver characteristics are not applicable. After OCD calibration is completed or driver strength is
set to default, subsequent EMRS(1) commands not intended to adjust OCD characteristics must specify A7~A9 as ‟000‟
in order to maintain the default or calibrated value.
Off- Chip-Driver program
A9
A8
A7
Operation
0
0
0
OCD calibration mode exit
0
0
1
Drive(1) DQ, DQS, (RDQS) high and DQS low
0
1
0
Drive(0) DQ, DQS, (RDQS) low and DQS high
1
0
0
Adjust mode
1
1
1
OCD calibration default
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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OCD impedance adjust
To adjust output driver impedance, controllers must issue the ADJUST EMRS (1) command along with a 4 bit burst code
to DDR2 SDRAM as in the following table. For this operation, Burst Length has to be set to BL = 4 via MRS command
before activating OCD and controllers must drive the burst code to all DQs at the same time. DT0 is the table means all
DQ bits at bit time 0, DT1 at bit time 1, and so forth. The driver output impedance is adjusted for all DDR2 SDRAM DQs
simultaneously and after OCD calibration, all DQs of a given DDR2 SDRAM will be adjusted to the same driver strength
setting. The maximum step count for adjustment can be up to 16 and when the limit is reached, further increment or
decrement code has no effect. The default setting may be any step within the maximum step count range. When Adjust
mode command is issued, AL from previously set value must be applied.
4 bit burst code inputs to all DQs
Operation
DT0
DT1
DT2
DT3
Pull-up driver strength
Pull-down driver strength
0
0
0
0
NOP (no operation)
NOP (no operation)
0
0
0
1
Increase by 1 step
NOP
0
0
1
0
Decrease by 1 step
NOP
0
1
0
0
NOP
Increase by 1 step
1
0
0
0
NOP
Decrease by 1 step
0
1
0
1
Increase by 1 step
Increase by 1 step
0
1
1
0
Decrease by 1 step
Increase by 1 step
1
0
0
1
Increase by 1 step
Decrease by 1 step
1
0
1
0
Decrease by 1 step
Decrease by 1 step
Other Combinations
Reserved
For proper operation of adjust mode, WL = RL 1 = AL + CL -1 clocks and tDS / tDH should be met as the following timing
diagram. Input data pattern for adjustment, DT0 ~ DT3 is fixed and not affected by MRS addressing mode (i.e. sequential
or interleave).
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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OCD Adjust Mode
OCD adjust mode OCD calibration
mode exit
EMRS
CK
CK
CMD NOP NOP NOP NOP NOP
WL
DQS
DQ
tDS tDH
DT0DT1DT2DT3
DM
EMRS NOP
WR
DQS
Drive Mode
Drive mode, both Drive (1) and Drive (0), is used for controllers to measure DDR2 SDRAM Driver impedance before
OCD impedance adjustment. In this mode, all outputs are driven out tOIT after “enter drive mode” command and all output
drivers are turned-off tOIT after “OCD calibration mode exit” command as the following timing diagram.
NOP NOP NOP
NOP
EMRS(1)
CMD
DQ_in
NOP
DQS_in
CK, CK
EMRS(1) NOP
Enter Drive Mode OCD calibration
mode exit
NOP
DQS high & DQS low for Drive(1), DQS low & DQS high for Drive 0
DQS high for Drive(0)
DQS high for Drive(1)
tOIT tOIT
On-Die Termination (ODT)
ODT (On-Die Termination) is a feature that allows a DRAM to turn on/off termination resistance for each DQ, DQ, DQS,
DQS, RDQS, RDQS, and DM signal for x8 configurations via the ODT control pin. For x16 configuration ODT is applied to
each DQ, UDQS, DQS, LDQS, DQS, UDM and LDM signal via the ODT control pin. The ODT feature is designed to
improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination
resistance for any or all DRAM devices.
The ODT function can be used for all active and standby modes. ODT is turned off and not supported in Self-Refresh
mode.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Functional Representation of ODT
DRAM
Input
Buffer Input
Pin
Rval1
Rval1
Rval2
Rval2
sw1
sw1
sw2
sw2
VDDQ VDDQ
VSSQ VSSQ
Rval3
Rval3
sw3
sw3
VDDQ
VSSQ
Switch sw1, sw2, or sw3 is enabled by the ODT pin. Selection between sw1, sw2, or sw3 is determined by “Rtt (nominal)”
in EMRS.
Termination included on all DQs, DM, DQS, DQS, RDQS, and RDQS pins.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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ODT related timings
MRS command to ODT update delay
During normal operation the value of the effective termination resistance can be changed with an EMRS command. The
update of the Rtt setting is done between tMOD, min and tMOD, max, and CKE must remain HIGH for the entire duration
of tMOD window for proper operation. The timings are shown in the following timing diagram.
CKE
Rtt
CK,CK
tIS
CMD
tAOFD
EMRS NOP NOP NOP NOP NOP
tMOD, min
tMOD, max
Old setting Updating New setting
EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt(Nominal)
Setting in this diagram is the Register and I/O setting, not what is measured from outside.
However, to prevent any impedance glitch on the channel, the following conditions must be met.
- tAOFD must be met before issuing the EMRS command.
- ODT must remain LOW for the entire duration of tMOD window, until tMOD, max is met.
Now the ODT is ready for normal operation with the new setting, and the ODT may be raised again to turn on the ODT.
Following timing diagram shows the proper Rtt update procedure.
Entire duration of tMOD window for proper operation. The timings are shown in the following timing diagram
CKE
Rtt
CK,CK
tIS
CMD
tAOFD
EMRS NOP NOP NOP NOP
tMOD, max
Old setting New setting
EMRS command directed to EMR(1), which updates the information in EMR(1)[A6,A2], i.e. Rtt(Nominal)
Setting in this diagram is the Register and I/O setting, not what is measured from outside.
tAOND
NOP
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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ODT On/Off timings
ODT timing for active/standby mode
Rtt
tIS
tIS
tIS
tAOND tAOFD(2.5tck)
T-3 T-5
T-4T-0 T-2
T-1 T-6
CKE
Internal
Term Res.
ODT
CK, CK
tAON, min tAON, max tAOF, min tAOF, max
ODT Timing for Power-down mode
t
IS
t
IS
tAOFPD,max
Rtt
tAONPD,min
tAOFPD,min
tAONPD,max
T5 T6
T4T3T2
T0 T1
CKE
DQ
ODT
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Bank Activate Command
The Bank Activate command is issued by holding CAS and E high plus CS and RAS low at the rising edge of the clock.
The bank addresses BA0 ~ BA1 are used to select the desired bank. The row addresses A0 through A13 are used to
determine which row to activate in the selected bank for and x8 organized components. For x16 components row
addresses A0 through A12 have to be applied. The Bank Activate command must be applied before any Read or Write
operation can be executed. Immediately after the bank active command, the DDR2 SDRAM can accept a read or write
command (with or without Auto-Precharge) on the following clock cycle. If an R/W command is issued to a bank that has
not satisfied the tRCDmin specification, then additive latency must be programmed into the device to delay the R/W
command which is internally issued to the device. The additive latency value must be chosen to assure tRCDmin is satisfied.
Additive latencies of 0, 1, 2, 3, 4, 5, and 6 are supported. Once a bank has been activated it must be precharged before
another Bank Activate command can be applied to the same bank. The bank active and precharge times are defined as
tRAS and tRP, respectively. The minimum time interval between successive Bank Activate commands to the same bank is
determined (tRC). The minimum time interval between Bank Active commands, to other bank, is the Bank A to Bank B
delay time (tRRD).
In order to ensure that 8 bank devices do not exceed the instantaneous current supplying capability of 4 bank devices,
certain restrictions on operation of the 8 bank devices must be observed. There are two rules. One for restricting the
number of sequential ACTcommands that can be issued and another for allowing more time for RAS precharge for a
Precharge All command. The rules are list as follow:
* 8 bank device sequential Bank Activation Restriction: No more than 4 banks may be activated in a rolling tFAW window.
Conveting to clocks is done by dividing tFAW by tCK and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
*8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+tCK,
where tRP is the value for a single bank pre-charge.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Bank Activate Command Cycle: tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2
Address NOP
Command
T0 T2T1 T3 T4
Col. Addr.
Bank A Row Addr.
Bank B Col. Addr.
Bank B
Internal RAS-CAS delay tRCDmin.
Bank A to Bank B delay tRRD.
Activate
Bank B
Read A
Posted CAS
Activate
Bank A Read B
Posted CAS
Read A
Begins
Row Addr.
Bank A Addr.
Bank A
Precharge
Bank A NOP
Addr.
Bank B
Precharge
Bank B
Row Addr.
Bank A
Activate
Bank A
tRP Row Precharge Time (Bank A)
tRC Row Cycle Time (Bank A)
Tn Tn+1 Tn+2 Tn+3
ACT
RAS-RAS delay tRRD.
tRAS Row Active Time (Bank A)
additive latency AL=2
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
28
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Read and Write Commands and Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting RAS high, CS
and CAS low at the clock‟s rising edge. E must also be defined at this time to determine whether the access cycle is a
read operation (E high) or a write operation (E low). The DDR2 SDRAM provides a fast column access operation. A
single Read or Write Command will initiate a serial read or write operation on successive clock cycles. The boundary of
the burst cycle is restricted to specific segments of the page length.
A new burst access must not interrupt the previous 4 bit burst operation in case of BL = 4 setting. However, in case of
BL=8 setting, two cases of interrupt by a new burst access are allowed, one reads interrupted by a read, the other
writes interrupted by a write with 4 bit burst boundary respectively, and the minimum CAS to CAS delay (tCCD) is
minimum 2 clocks for read or write cycles.
Posted CAS
Posted CAS operation is supported to make command and data bus efficient for sustainable bandwidths in DDR2
SDRAM. In this operation, the DDR2 SDRAM allows a Read or Write command to be issued immediately after the RAS
bank activate command (or any time during the RAS to CAS delay time, tRCD, period). The command is held for the time
of the Additive Latency (AL) before it is issued inside the device. The Read Latency (RL) is the sum of AL and the CAS
latency (CL). Therefore if a user chooses to issue a Read/Write command before the tRCDmin, then AL greater than 0
must be written into the EMRS (1). The Write Latency (WL) is always defined as RL 1 (Read Latency -1) where Read
Latency is defined as the sum of Additive Latency plus CAS latency (RL=AL+CL). If a user chooses to issue a Read
command after the tRCDmin period, the Read Latency is also defined as RL = AL + CL.
Example of posted CAS operation:
Read followed by a write to the same bank:
AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL -1) = 4, BL = 4
Dout0Dout1Dout2
Dout3
CMD
DQ
023 4 5 6 7 8 9 10 11 12-1 1
>=tRCD
AL = 2
RL = AL + CL = 5
CL = 3WL = RL -1 = 4
Din0 Din1 Din2 Din3
PostCAS1
DQS,
DQS
Activate Read Write
Bank A Bank A Bank A
CK, CK
Read followed by a write to the same bank:
AL = 0, CL = 3, RL = (AL + CL) = 3, WL = (RL -1) = 2, BL = 4
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Activate
Bank A
023 4 5 6 7 8 9 10 11 12-1 1
CMD
DQ
>=tRCD
RL = AL + CL = 3
WL = RL 1 = 2
PostCAS5
DQS,
DQS
Read
Bank A
Din0 Din1 Din2 Din3
Dout0 Dout1 Dout2 Dout3
Write
Bank A
CK, CK
AL=0
CL=3
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
30
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Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from
memory locations (read cycle). The parameters that define how the burst mode will operate are burst
sequence and burst length. The DDR2 SDRAM supports 4 bit and 8 bit burst modes only. For 8 bit burst
mode, full interleave address ordering is supported, however, sequential address ordering is nibble based for
ease of implementation. The burst type, either sequential or interleaved, is programmable and defined by the
address bit 3 (A3) of the MRS. Seamless burst read or write operations are supported. Interruption of a burst
read or write operation is prohibited, when burst length = 4 is programmed. For burst interruption of a read or
write burst when burst length = 8 is used, see the “Burst Interruption “section of this datasheet. A Burst Stop
command is not supported on DDR2 SDRAM devices.
Bust Length and Sequence
Burst Length
Starting Address
(A2 A1 A0)
Sequential Addressing
(decimal)
Interleave Addressing
(decimal)
4
x 0 0
0, 1, 2, 3
0, 1, 2, 3
x 0 1
1, 2, 3, 0
1, 0, 3, 2
x 1 0
2, 3, 0, 1
2, 3, 0, 1
x 1 1
3, 0, 1, 2
3, 2, 1, 0
8
0 0 0
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
0 0 1
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
0 1 0
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
0 1 1
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
1 0 0
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
1 0 1
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
1 1 0
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
1 1 1
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
Note: 1) Page length is a function of I/O organization
256Mb X 4 organization (CA0-CA9, CA11); Page Size = 1kByte; Page Length = 2048
32Mb X 16 organization (CA0-CA9); Page Size = 2K Byte; Page Length = 1024
64Mb X 8 organization (CA0-CA9 ); Page Size = 1K Byte; Page Length = 1024
2) Order of burst access for sequential addressing is nibble-based and therefore different from SDR or
DDR components
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
31
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Burst Read Command
The Burst Read command is initiated by having CS and CAS low while holding RAS and E high at the rising edge of the
clock. The address inputs determine the starting column address for the burst. The delay from the start of the command
until the data from the first cell appears on the outputs is equal to the value of the read latency (RL). The data strobe
output (DQS) is driven low one clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst is
synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on the DQ pin in phase
with the DQS signal in a source synchronous manner. The RL is equal to an additive latency (AL) plus CAS latency (CL).
The CL is defined by the Mode Register Set (MRS). The AL is defined by the Extended Mode Register Set (EMRS (1))
Basic Burst Read Timing
DQS,
DQS
DQ
DQS
DQS
tRPRE
tDQSQmax
tRPST
tDQSCK tAC
Dout Dout Dout Dout
CLK, CLK
CLK
CLK
tCH tCL tCK
DO-Read
tQH DQSQmax
tQH
t
tLZ tHZ
Examples:
Burst Read Operation: RL = 5 (AL = 2, CL = 3, BL = 4)
NOP NOP NOP NOP NOP NOP
NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
AL = 2 CL = 3
NOP
<= tDQSCK
CMD
DQ
BRead523
DQS,
DQS
Post CAS
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
32
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Burst Read Operation: RL = 3 (AL = 0, CL = 3, BL = 8)
CMD
NOP NOP NOP NOP NOP NOP
DQ's
NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 3
CL = 3
NOP
<= tDQSCK
BRead303
DQS,
DQS
Dout A4 Dout A5 Dout A6 Dout A7
CK, CK
Burst Read followed by Burst Write : RL = 5, WL = (RL-1) = 4, BL = 4
NOP Posted CAS
WRITE A NOP NOP NOP NOP
NOP
READ A
Posted CAS
T0 T1
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
NOP
CMD
DQ
BRBW514
Tn-1 Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5
Din A0 Din A1 Din A2 Din A3
DQS,
DQS
WL = RL - 1 = 4
tRTW(Read to Write turn around time)
CK, CK
The minimum time from the burst read command to the burst write command is defined by a read-to-write-turn-around
time(tRTW), which is 4 clocks in case of BL=4 operation, 6 clocks in case of BL=8 operation.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Seamless Burst Read Operation: RL = 5, AL = 2, CL = 3, BL = 4
NOP NOP NOP NOP NOP NOP
NOP
READ A
Post CAS READ B
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3 Dout B0 Dout B1 Dout B2 Dout B3
RL = 5
AL = 2 CL = 3
SBR523
CMD
DQ
DQS,
DQS
CK, CK
The seamless burst read operation‟s supported by enabling a read command at every clock for BL=4 operation, and
every 4 clock for BL=8 operation. This operation allows regardless of same or different banks as long as the banks acti-
vated.
Burst Write Command
The Burst Write command is initiated by having CS, CAS and WE low while holding RAS high at the rising edge of the
clock. The address inputs determine the starting column address. Write latency (WL) is defined by a read latency (RL)
minus one and is equal to (AL + CL -1). A data strobe signal (DQS) has to be driven low (preamble) a time tWPRE prior
to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge of the DQS following
the preamble. The tDQSS specification must be satisfied for write cycles. The subsequent burst bit data are issued on
successive edges of the DQS until the burst length is completed, which is 4 or 8 bit burst. When the burst has finished,
any additional data supplied to the DQ pins will be ignored. The DQ signal is ignored after the burst write operation is
complete. The time from the completion of the burst write to bank precharge is named “write recovery time” (WR) .
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the
EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by
which the DDR2 SDRAM pin timing measured is mode dependent.
Basic Burst Write Timing
DQS,
DQS DQS
DQS
tDQSH tDQSL
tWPRE WPST
t
Din Din Din Din
tDS tDH
Example:
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Burst Write Operation: RL = 5 (AL = 2, CL = 3), WL = 4, BL = 4
NOP NOP NOP NOP NOP Precharge
NOP
WRITE A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = RL-1 = 4
BW543
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
<= tDQSS
tWR
Completion of
the Burst Write
DQS,
DQS
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
35
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Burst Write Operation: RL = 3 (AL = 0, CL = 3), WL = 2, BL = 4
NOP NOP NOP NOP
NOP
WRITE A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = RL-1 = 2
BW322
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
tWR
Completion of
the Burst Write
<= tDQSS
Precharge Bank A
Activate
tRP
DQS,
DQS
CK, CK
Burst Write followed by Burst Read: RL = 5 (AL = 2, CL = 3), WL = 4, tWTR = 2, BL = 4
NOP NOP NOP NOP
NOP READ A
Post CAS
BWBR
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
AL=2 CL=3
NOP NOP
tWTR
T0 T2T1 T3 T4 T5 T6 T7 T8 T9
Write to Read = (CL - 1)+ BL/2 +tWTR(2) = 6
DQS,
DQS
WL = RL - 1 = 4
RL=5
CK, CK
The minimum number of clocks from the burst write command to the burst read command is (CL 1) +BL/2 + tWTR
where tWTR is the write-to-read turn-around time tWTR expressed in clock cycles. The tWTR is not a write recovery time
(tWR) but the time required to transfer 4 bit write data from the input buffer into sense amplifiers in the array.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Seamless Burst Write Operation: RL = 5, WL = 4, BL = 4
NOP NOP NOP NOP NOP NOP
NOP
DIN A0 DIN A1 DIN A2 DIN A3
WRITE A
Post CAS
WL = RL - 1 = 4
WRITE B
Post CAS
DIN B0 DIN B1 DIN B2 DIN B3
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
SBR
DQS,
DQS
CK, CK
The seamless burst write operation is supported by enabling a write command every BL / 2 number of clocks. This
operation is allowed regardless of same or different banks as long as the banks are activated.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Write Data Mask
One write data mask input (DM) pin for each 8 data bits (DQ) will be supported on DDR2 SDRAMs, consistent with the
implementation on DDR SDRAMs. It has identical timings on write operations as the data bits, and though used in a
uni-directional manner, is internally loaded identically to data bits to insure matched system timing. DM of x4 and x16 bit
organization is not used during read cycles. However, DM of x8 bit organization can be used as RDQS during read cycles
by EMRS (1) setting.
Write Data Mask Timing
DQS,
DQS DQS
DQS
tDQSH tDQSL
tWPRE WPST
t
DQ Din Din Din Din
tDS DH
t
DM
don't care
Burst Write Operation with Data Mask: RL = 3 (AL = 0, CL = 3), WL = 2, tWR = 3, BL = 4
NOP NOP NOP NOP
NOP
WRITE A
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = RL-1 = 2
DM
CMD
DQ
NOP
tWR
<= tDQSS
Precharge Bank A
Activate
tRP
DQS,
DQS
DM
DIN A0 DIN A1 DIN A3DIN A2
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
38
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Burst Interruption
Interruption of a read or write burst is prohibited for burst length of 4 and only allowed for burst length
of 8 under the following conditions:
1. A Read Burst of 8 can only be interrupted by another Read command. Read burst interruption by a Write or
Precharge Command is prohibited.
2. A Write Burst of 8 can only be interrupted by another Write command. Write burst interruption by a Read or
Precharge Command is prohibited.
3. Read burst interrupt occur exactly two clocks after the previous Read command. Any other Read burst
interrupt timings are prohibited.
4. Write burst interrupt occur exactly two clocks after the previous Write command. Any other Read burst
interrupt timings are prohibited.
5. Read or Write burst interruption is allowed to any bank inside the DDR2 SDRAM.
6. Read or Write burst with Auto-Precharge enabled is not allowed to be interrupted.
7. Read burst interruption is allowed by a Read with Auto-Precharge command.
8. Write burst interruption is allowed by a Write with Auto-Precharge command.
9. All command timings are referenced to burst length set in the mode register. They are not referenced to the
actual burst. For example, Minimum Read to Precharge timing is AL + BL/2 where BL is the burst length set
in the mode register and not the actual burst (which is shorter because of interrupt). Minimum Write to
Precharge timing is WL + BL/ 2 + tWR, where tWR starts with the rising clock after the un-interrupted burst end
and not form the end of the actual burst end.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
39
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
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Examples:
Read Burst Interrupt Timing Example: (CL = 3, AL = 0, RL = 3, BL = 8)
NOP NOP NOP NOP NOP
NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
RBI
DQS,
DQS
READ B NOP
Dout A0 Dout A1 Dout A2 Dout A3 Dout B0 Dout B1 Dout B2 Dout B3 Dout B4 Dout B5 Dout B6 Dout B7
NOP
CK, CK
Write Burst Interrupt Timing Example: (CL = 3, AL = 0, WL = 2, BL = 8)
NOP NOP NOP NOP
NOP
WRITE A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
WBI
DQS,
DQS
NOP
Din A0 Din A1 Din A2 Din A3 Din B0 Din B1 Din B2 Din B3 Dout B4 Din B5 Din B6 Din B7
NOP
WRITE B
CK, CK
NOP
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
40
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge
Command is triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The
Pre-charge Command can be used to precharge each bank independently or all banks simultaneously.
Three address bits A10, BA0 and BA1 are used to define which bank to precharge when the command is
issued.
Bank Selection for Pre-charge by Address Bit
A10
BA2
BA1
BA0
Precharge
Bank(s)
LOW
Dont Care
LOW
LOW
Bank 0 only
LOW
Dont Care
LOW
HIGH
Bank 1 only
LOW
Dont Care
HIGH
LOW
Bank 2 only
LOW
Dont Care
HIGH
HIGH
Bank 3 only
LOW
Dont Care
LOW
LOW
Bank 4 only
LOW
Dont Care
LOW
HIGH
Bank 5 only
LOW
Dont Care
HIGH
LOW
Bank 6 only
LOW
Dont Care
HIGH
HIGH
Bank 7 only
HIGH
Dont Care
Dont Care
Dont Care
all banks
Burst Read Operation Followed by a Pre-charge
Minimum Read to Pre-charge command spacing to the same bank = AL + BL/2 + max (RTP, 2 ) 2 clocks.
For the earliest possible pre-charge, the Pre-charge command may be issued on the rising edge which is “Additive
Latency (AL) + BL/2 clocks” after a Read Command, as long as the minimum tRAS timing is satisfied.
The minimum Read to Pre-charge spacing has also to satisfy a minimum analog time from the rising clock edge that
initiates the last 4-bit pre-fetch of a Read to Pre-charge command. This time is call tRTP (Read to Pre-charge). For BL=4
this is the time from the actual read (AL after the Read command) to Pre-charge command. For BL=8 this is the time from
AL + 2 clocks after the Read to the Pre-charge command.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
41
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Examples:
Burst Read Operation Followed by Precharge: RL = 4 (AL = 1, CL = 3), BL = 4, tRTP 2 clocks
NOP Precharge NOP Bank A
Activate NOP
NOP
READ A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P413
NOP
AL + BL/2 clks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 1CL = 3
RL = 4
>=tRAS CL = 3
>=tRP
DQS,
DQS
NOP
>=tRC
>=tRTP
CK, CK
Burst Read Operation Followed by Precharge: RL = 4 (AL = 1, CL = 3), BL = 8, tRTP 2 clocks
NOP NOP NOP
Post CAS
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P413(8)
NOP
AL + BL/2 clks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 1CL = 3
RL = 4
>=tRAS CL = 3
DQS,
DQS
NOP
>=tRC >=tRTP
Dout A4 Dout A5 Dout A6 Dout A7
Precharge NOP NOP
first 4-bit prefetch second 4-bit prefetch
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
42
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Burst Read Operation Followed by Precharge: RL = 5 (AL = 2, CL = 3), BL = 4, tRTP 2 clocks
NOP NOP NOP Bank A
Activate NOP
NOP
Post CAS
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P523
NOP
AL + BL/2 clks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 2CL = 3
RL = 5
>=tRAS CL = 3
>=tRP
Precharge
DQS,
DQS
>=tRC
>=tRTP
CK, CK
Burst Read Operation Followed by Precharge: RL = 6, (AL = 2, CL = 4), BL = 4, tRTP 2 clocks
NOP NOP
NOP
READ A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P624
NOP
AL + BL/2 clocks
Dout A0 Dout A1 Dout A2 Dout A3
AL = 2
CL = 4
RL = 6
>=tRAS CL = 4
Precharge
A
Bank A
Activate
DQS,
DQS
NOP NOP
>=tRC
>=tRTP
CK, CK
>=tRP
Burst Read Operation Followed by Precharge: RL = 4, (AL = 0, CL = 4), BL = 8, tRTP > 2 clocks
NOP NOP NOP
READ A
T0 T2T1 T3 T4 T5 T6 T7 T8
CMD
DQ
BR-P404(8)
NOP
AL + BL/2 clks + 1
Dout A0 Dout A1 Dout A2 Dout A3
CL = 4
RL = 4
>=tRAS
>=tRP
DQS,
DQS
NOP
>=tRTP
Dout A4 Dout A5 Dout A6 Dout A7
Precharge NOP Bank A
Activate
first 4-bit prefetch second 4-bit prefetch
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
43
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Burst Write followed by Precharge
Minimum Write to Precharge command spacing to the same bank = WL + BL/2 + tWR. For write cycles, a
delay must be satisfied from the completion of the last burst write cycle until the Precharge command can be
issued. This delay is known as a write recovery time (tWR) referenced from the completion of the burst write to
the Precharge command. No Precharge command should be issued prior to the tWR delay, as DDR2 SDRAM
does not support any burst interrupt by a Precharge command. TWR is an analog timing parameter (see the
AC table in this datasheet) and is not the programmed value for tWR in the MRS.
Examples:
Burst Write followed by Precharge : WL = (RL 1) = 3, BL = 4, tWR = 3
NOP NOP NOP NOP
NOP
WRITE A
Post CAS
T
0T
2
T
1T
3T
4T
5T
6T
7T
8
WL = 3
BW-P3
CMD
DQ
NOP
DIN
A0 DIN
A1 DIN
A2 DIN
A3
>=tWR
Completion of
the Burst Write
Precharge
A
NOP
DQS,
DQS
CK, CK
Burst Write followed by Precharge : WL = (RL 1) = 4, BL = 4, tWR = 3
NOP NOP NOP NOP
NOP
WRITE A
Post CAS
T0 T2T1 T3 T4 T5 T6 T7 T9
WL = 4
BW-P4
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
tWR
Completion of
the Burst Write
Precharge
A
NOP
DQS,
DQS
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
44
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
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Auto-Precharge Operation
Before a new row in an active bank can be opened, the active bank must be pre-charged using either the Pre-charge
Command or the Auto-Precharge function. When a Read or a Write Command is given to the DDR2 SDRAM, the CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin pre-charge at the
earliest possible moment during the burst read or write cycle. If A10 is low when the Read or Write Command is issued,
then normal Read or Write burst operation is executed and the bank remains active at the completion of the burst
sequence. If A10 is high when the Read or Write Command is issued, then the Auto-Precharge function is enabled.
During Auto-Precharge, a Read Command will execute as normal with the exception that the active bank will begin to
precharge internally on the rising edge which is CAS Latency (CL) clock cycles before the end of the read burst.
Auto-Precharge is also implemented for Write Commands. The pre-charge operation engaged by the Auto-Precharge
command will not begin until the last data of the write burst sequence is properly stored in the memory array. This feature
allows the pre-charge operation to be partially or completely hidden during burst read cycles (dependent upon CAS
Latency) thus improving system performance for random data access. The RAS lockout circuit internally delays the
pre-charge operation until the array restore operation has been completed so that the Auto-Precharge command may be
issued with any read or write command.
Burst Read with Auto-Precharge
If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The DDR2 SDRAM
starts an Auto-Precharge operation on the rising edge which is (AL + BL/2) cycles later from the Read with AP command
if tRAS(min) and tRTP are satisfied. If tRAS(min) is not satisfied at the edge, the start point of Auto-Precharge operation will
be delayed until tRAS(min) is satisfied. If tRTP(min) is not satisfied at the edge, the start point of Auto-Precharge operation
will be delayed until tRTP(min) is satisfied.
In case the internal pre-charge is pushed out by tRTP, tRP starts at the point where the internal pre-charge happens (not at
the next rising clock edge after this event). So for BL = 4 the minimum time from Read with Auto-Precharge to the next
Activate command becomes AL + tRTP + tRP. For BL = 8 the time from Read with Auto-Precharge to the next Activate
command is AL + 2 + tRTP + tRP. Note that both parameters tRTP and tRP have to be rounded up to the next integer value. In
any event internal pre-charge does not start earlier than two clocks after the last 4-bit pre-fetch.
A new bank active (command) may be issued to the same bank if the following two conditions are satisfied
simultaneously:
(1) The RAS pre-charge time (tRP) has been satisfied from the clock at which the Auto-Precharge begins.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
45
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Examples:
Burst Read with Auto-Precharge followed by an activation to the Same Bank (tRC Limit)
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
AL = 2 CL = 3
NOP
CMD
DQ
BR-AP5231
A10 ="high"
tRP
Auto-Precharge Begins
DQS,
DQS
tRAS
tRCmin.
NOP
AL + BL/2
CK, CK
Burst Read with Auto-Precharge followed by an Activation to the Same Bank (tRAS Limit):
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 5
AL = 2 CL = 3
NOP
CMD
DQ
BR-AP5232
A10 ="high"
tRP
Auto-Precharge Begins
DQS,
DQS
tRC
tRAS(min)
NOP
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
46
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Burst Read with Auto-Precharge followed by an Activation to the Same Bank:
RL = 4 ( AL = 1, CL = 3), BL = 8, tRTP 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 4
AL = 1 CL = 3
NOP
CMD
DQ
BR-AP413(8)2
A10 ="high" tRP
Auto-Precharge Begins
DQS,
DQS
NOP
Dout A4 Dout A5 Dout A6 Dout A7
first 4-bit prefetch second 4-bit prefetch
>= tRTP
AL + BL/2
CK, CK
Burst Read with Auto-Precharge followed by an Activation to the Same Bank:
RL = 4 ( AL = 1, CL = 3), BL = 4, tRTP > 2 clocks
NOP NOP NOP NOP Bank
Activate
NOP
READ w/AP
Posted CAS
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 4
AL = 1 CL = 3
NOP
CMD
DQ
BR-AP4133
A10 ="high"
Auto-Precharge Begins
DQS,
DQS
NOP
first 4-bit prefetch
tRTP
AL + tRTP + tRP
tRP
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
47
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
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Burst Write with Auto-Precharge
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The DDR2 SDRAM
automatically begins pre-charge operation after the completion of the write burst plus the write recovery time delay
(WR), programmed in the MRS register, as long as tRAS is satisfied. The bank undergoing Auto-Precharge from the
completion of the write burst may be reactivated if the following two conditions are satisfied.
1. The last data-in to bank activate delay time (tDAL = WR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Examples:
Burst Write with Auto-Precharge (tRC Limit): WL = 2, tDAL = 6 (WR = 3, tRP = 3), BL = 4
NOP NOP NOP NOP NOP Bank A
Activate
NOP
WRITE
w/AP
T0 T2T1 T3 T4 T5 T6 T7
NOP
CMD
DQ
BW-AP223
A10 ="high"
tRP
Auto-Precharge Begins
DIN A0 DIN A1 DIN A2 DIN A3
WL = RL-1 = 2 WR
tRCmin.
DQS,
DQS
Completion of the Burst Write
tDAL
>=tRASmin.
CK, CK
Burst Write with Auto-Precharge (tWR + tRP Limit) : WL = 4, tDAL = 6 (tWR = 3, tRP = 3), BL = 4
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
48
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
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NOP NOP NOP NOP NOP Bank A
Activate
NOP
Posted CAS
WRITE w/AP
T
0T
3T
4T
5T
6T
7T12
NOP
CMD
DQ
BW-AP423
A10 ="high"
tRP
Auto-Precharge Begins
DIN
A0 DIN
A1 DIN
A2 DIN
A3
WL = RL-1 = 4tWR
>=tRC
T
9
T
8
Completion of the Burst Write
DQS,
DQS
tDAL
>=tRAS
CK, CK
Precharge & auto precharge clarification
From
Command
To Command
Minimum Delay between From
command to to command
Units
Note
Read
Precharge (to same Bank as Read)
AL + BL/2 + max(RTP,2) 2
tCK
1,2
Precharge All
AL + BL/2 + max(RTP,2) 2
tCK
1,2
Read w/AP
Precharge ( to same Bank as Read wAP)
AL + BL/2 + max(RTP,2) 2
tCK
1,2
Precharge Al
AL + BL/2 + max(RTP,2) 2
tCK
1,2
Write
Precharge (to same Bank as Write)
WL + BL/2 + tWR
tCK
2
Precharge Al
WL + BL/2 + tWR
tCK
2
Write w/AP
Precharge (to same bank as Write w/AP)
WL + BL/2 + WR
tCK
2
Precharge Al
WL + BL/2 + WR
tCK
2
Precharge
Precharge (to same bank as Precharge)
1
tCK
2
Precharge Al
1
tCK
2
Precharge All
Precharge
1
tCK
2
Precharge Al
1
tCK
2
Note:
1) RTP [cycles] = RU {tRTP(ns)/tCK(ns)}, where RI stands for round up.
2) For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or precharge
all, issued to that bank. The precharge period is satisfied after tRP or tRPa depending on the latest precharge command issued to that
bank.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
49
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Refresh
SDRAMs require a refresh of all rows in any rolling 64 ms interval. Each refresh is generated in one of two ways : by an
explicit Auto-Refresh command, or by an internally timed event in Self-Refresh mode. Dividing the number of device rows
into the rolling 64 ms interval defined the average refresh interval tREFI, which is a guideline to controlles for distributed
refresh timing. For example, a 512Mbit DDR2 SDRAM has 8192 rows resulting in a tREFI of 7.8 µs.
Auto-Refresh Command
Auto-Refresh is used during normal operation of the DDR2 SDRAMs. This command is nonpersistent, so it must be
issued each time a refresh is required. The refresh addressing is generated by the internal refresh controller. This makes
the address bits”Don‟t Care” during an Auto-Refresh command. The DDR2 SDRAM requires Auto-Refresh cycles at an
average periodic interval of tREFI (maximum).
When CS, RAS and CAS are held low and E high at the rising edge of the clock, the chip enters the Auto-Refresh mode.
All banks of the SDRAM must be pre-charged and idle for a minimum of the precharge time (tRP) before the Auto-Refresh
Command can be applied. An internal address counter supplies the addresses during the refresh cycle. No control of the
external address bus is required once this cycle has started.
When the refresh cycle has completed, all banks of the SDRAM will be in the pre-charged (idle) state. A delay between
the Auto-Refresh Command and the next Activate Command or subsequent Auto-Refresh Command must be greater
than or equal to the Auto-Refresh cycle time (tRFC).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM, meaning
that the maximum absolute interval between any Auto-Refresh command and the next Auto-Refresh command is 9 *
tREFI.
T0 T2T1 T3
AR
CK, CK
CMD
Precharge
> = t
RP
NOP AUTO
REFRESH ANYNOP
> = t
RFC
> = t
RFC
AUTO
REFRESH
NOP NOP NOP
CKE "high"
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
50
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Self-Refresh Command
The Self-Refresh command can be used to retain data, even if the rest of the system is powered down. When in the
Self-Refresh mode, the DDR2 SDRAM retains data without external clocking.
The DDR2 SDRAM device has a built-in timer to accommodate Self-Refresh operation. The Self-Refresh Command is
defined by having CS, RAS, CAS and CE held low with E high at the rising edge of the clock. ODT must be turned off
before issuing Self Refresh command, by either driving ODT pin low or using EMRS (1) command. Once the command is
registered, CKE must be held low to keep the device in Self-Refresh mode. When the DDR2 SDRAM has entered
Self-Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during
Self-Refresh Operation to save power. The user may change the external clock frequency or halt the external clock one
clock after Self-Refresh entry is registered, however, the clock must be restarted and stable before the device can exit
Self-Refresh operation. Once Self-Refresh Exit command is registered, a delay equal or longer than the tXSNR or tXSRD
must be satisfied before a valid command can be issued to the device. CKE must remain high for the entire Self-Refresh
exit period (tXSNR or tXSRD) for proper operation. NOP or DESELECT commands must be registered on each positive clock
edge during the Self-Refresh exit interval. Since the ODT function is not supported during Self-Refresh operation, ODT
has to be turned off tAOFD before entering Self-Refresh Mode and can be turned on again when the tXSRD timing is
satisfied.
CK/CK
T1 T3T2
CK/CK may
be halted CK/CK must
be stable
CKE >=tXSRD
>= tXSNR
Tn TrTmT5
T4
tRP* tis
tAOFD
CMD Self Refresh
Entry NOP Non-Read
Command Read
Command
T0
tis
tis
ODT
* Device must be in theing "All banks idle" state to enter Self Refresh mode.
* ODT must be turned off prior to entering Self Refresh mode.
* tXSRD (>=200 tCK) has to be satisfied for a Read or as Read with Auto-Precharge commend.
* tXSNR has to be satisfied for any command execept Read or a Read with Auto-Precharge command, where tXSNR is defined as tRFC + 10ns.
* The minium CKE low time is defined by the tCKEmin. timming paramester.
* Since CKE is an SSTL input, VREF must maintained during Self-Refresh.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
51
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Power-Down
Power-down is synchronously entered when CKE is registered low, along with NOP or Deselect command. CKE is not
allowed to go low while mode register or extended mode register command time, or read or write operation is in progress.
CKE is allowed to go low while any other operation such as row activation, Precharge, Auto-Precharge or Auto-Refresh is
in progress, but power-down IDD specification will not be applied until finishing those operations.
The DLL should be in a locked state when power-down is entered. Otherwise DLL should be reset after exiting
power-down mode for proper read operation.
If power-down occurs when all banks are precharged, this mode is referred to as Precharge Power-down; if power-down
occurs when there is a row active in any bank, this mode is referred to as Active Power-down. For Active Power-down
two different power saving modes can be selected within the MRS register, address bit A12. When A12 is set to “low” this
mode is referred as standard active power-down mode” and a fast power-down exit timing defined by the tXARD timing
parameter can be used. When A12 is set to “high” this mode is referred as a power saving “low power active power-down
mode”. This mode takes longer to exit from the power-down mode and the tXARDS timing parameter has to be satisfied.
Entering power-down deactivates the input and output buffers, excluding CK, CK, ODT and CKE. Also the DLL is
disabled upon entering Precharge Power-down or slow exit active power-down, but the DLL is kept enabled during fast
exit active power-down. In power-down mode, CKE low and a stable clock signal must be maintained at the inputs of
the DDR2 SDRAM, and all other input signals are “Don‟t Care”. Power-down duration is limited by 9 times tREFI of the
device.
The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect command). A
valid, executable command can be applied with power-down exit latency, tXP, tXARD or tXARDS, after CKE goes high.
Power-down exit latencies are defined in the AC spec table of this data sheet.
Power-Down Entry
Active Power-down mode can be entered after an activate command. Precharge Power-down mode can be entered after
a precharge, Precharge-All or internal precharge command. It is also allowed to enter power-mode after an Auto-Refresh
command or MRS / EMRS(1) command when tMRD is satisfied.
Active Power-down mode entry is prohibited as long as a Read Burst is in progress, meaning CKE should be kept high
until the burst operation is finished. Therefore Active Power-Down mode entry after a Read or Read with Auto-Precharge
command is allowed after RL + BL/2 is satisfied.
Active Power-down mode entry is prohibited as long as a Write Burst and the internal write recovery is in progress. In
case of a write command, active power-down mode entry is allowed then WL + BL/2 + tWTR is satisfied.
In case of a write command with Auto-Precharge, Power-down mode entry is allowed after the internal precharge
command has been executed, which WL + BL/2 + WR is starting from the write with Auto-Precharge command. In case
the DDR2 SDRAM enters the Precharge Power-down mode.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
52
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Examples:
Active Power-Down Mode Entry and Exit after an Activate Command
NOP NOP
Activate
T0 T2T1
CMD NOP
Tn Tn+1
CKE
Active
Power-Down
Entry
NOP NOP
Act.PD 0
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
Note: Active Power-Down mode exit timing tXARD (fast exit) or tXARDS (slow exit) depends on programmed state in
the MRS, address bit A12.
Active Power-Down Mode Entry and Exit after a Read Burst: RL = 4 (AL = 1, CL =3), BL = 4
NOP NOP
READ
T0 T2T1 T3 T4 T5 T6 T7 T8
Dout A0 Dout A1 Dout A2 Dout A3
RL = 4
CL = 3
CMD
DQ
DQS,
DQS
NOP NOP NOP NOP NOP NOP
Tn Tn+1
CKE
AL = 1
Active
Power-Down
Entry
RL + BL/2
NOP NOP
Act.PD 1
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
READ w/AP
Note: Active Power-Down mode exit timing tXARD (fast exit) or tXARDS (slow exit) depends on
programmed state in the MRS, address bit A12.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
53
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
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Active Power-Down Mode Entry and Exit after a Write Burst: WL = 2, tWTR = 2, BL = 4
NOP NOP
WRITE
T0 T2T1 T3 T4 T5 T6 T7
CMD
DQ
DQS,
DQS
NOP NOP NOP NOP NOP NOP
Tn Tn+1
CKE
WL = RL - 1 = 2
Active
Power-Down
Entry
WL + BL/2 + tWTR
NOP NOP
Act.PD 2
tWTR
tIS
Tn+2
tIS
Valid
Command
Active
Power-Down
Exit
tXARD or
tXARDS *)
CK, CK
DIN
A0 DIN
A1 DIN
A2 DIN
A3
Note: Active Power-Down mode exit timing tXARD (fast exit) or tXARDS (slow exit) depends on
programmed state in the MRS, address bit A12.
Precharge Power Down Mode Entry and Exit
tXP
NOP NOP
Precharge
*)
T0 T2T1
CMD
NOP NOP
Tn Tn+1
CKE
Precharge
Power-Down
Entry
NOP NOP
PrePD
tIS
Tn+2
tIS
Precharge
Power-Down
Exit
Valid
Command
tRP
NOP
T3
*) "Precharge" may be an external command or an internal
precharge following Write with AP.
CK, CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
54
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No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state. The purpose of the No
Operation Command is to prevent the SDRAM from registering any unwanted commands between operations. A No
Operation Command is registered when CS is low with RAS, CAS, and E held high at the rising edge of the clock. A No
Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle.
Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS
is brought high, the RAS, CAS, and E signals become don‟t care.
Input Clock Frequency Change
During operation the DRAM input clock frequency can be changed under the following conditions:
a) During Self-Refresh operation
b) DRAM is in Precharge Power-down mode and ODT is completely turned off.
The DDR2-SDRAM has to be in Precharged Power-down mode and idle. ODT must be ddress turned off and CKE
must be at a logic “lowstate. After a minimum of two clock cycles after tRP and tAOFD have been satisfied the input
clock frequency can be changed. A stable new clock frequency has to be provided, before CKE can be changed to a
“high” logic level again. After tXP has been satisfied a DLL RESET command via EMRS(1) has to be issued. During the
following DLL re-lock period of 200 clock cycles, ODT must remain off. After the DLL-re-lock period the DRAM is ready to
operate with the new clock frequency.
Example:
Input frequency change during Precharge Power-Down mode
NOP NOP
T0 T2T1 T3 T4 Tx Tx+1 Ty
CMD
NOP NOP NOP NOP NOP DLL
RESET
Ty+2 Ty+3
CKE
Frequency Change
occurs here
NOP NOP
Frequ.Ch.
Tz
tXP
Stable new clock
before power-down exit
CK, CK
tRP
tAOFD Minimum 2 clocks
required before
changing the frequency
Ty+1
NOP Valid
Command
200 clocks
ODT is off during
DLL RESET
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
55
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
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Asynchronous CKE Low Event
DRAM requires CKE to be maintained “high” for all valid operations as defined in this data sheet. If CKE asynchronously
drops “low” during any valid operation DRAM is not guaranteed to preserve the contents of the memory array. If this
event occurs, the memory controller must satisfy a time delay ( tdelay ) before turning off the clocks. Stable clocks must
exist at the input of DRAM before CKE is raised “high” again. The DRAM must be fully re-initialized as described the the
initialization sequence (section 2.2.1, step 4 thru 13). DRAM is ready for normal operation after the initialization sequence.
See AC timing parametric table for tdelay specification.
Asynchronous CKE Low Event
CKE
CKE drops low due to an
asynchronous reset event Clocks can be turned off after
this point
tdelay
CK, CK
stable clocks
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Truth Table
Command Truth Table
Function
CKE
CS
RAS
CAS
WE
BA0-BA2
A13-A11
A10
A9 A0
Notes
Previous
Cycle
Current
Cycle
(Extended) Mode
Register Set
H
H
L
L
L
L
BA
OP Code
1, 2
Auto-Refresh
H
H
L
L
L
H
X
X
X
X
1
Self-Refresh Entry
H
L
L
L
L
H
X
X
X
X
1,8
Self-Refresh Exit
L
H
H
X
X
X
X
X
X
X
1,7,8
Single Bank Precharge
H
H
L
L
H
L
BA
X
L
X
1,2
Precharge all Banks
H
H
L
L
H
L
X
X
H
X
1
Bank Activate
H
H
L
L
H
H
BA
Row Address
1,2
Write
H
H
L
H
L
L
BA
Column
L
Column
1,2,3
Write with
Auto-Precharge
H
H
L
H
L
L
BA
Column
H
Column
1,2,3
Read
H
H
L
H
L
H
BA
Column
L
Column
1,2,3
Read with
Auto-Precharge
H
H
L
H
L
H
BA
Column
H
Column
1,2,3
No Operation
H
X
L
H
H
H
X
X
X
X
1
Device Deselect
H
X
H
X
X
X
X
X
X
X
1
Power Down Entry
H
L
H
X
X
X
X
X
X
X
1,4
L
H
H
H
Power Down Exit
L
H
H
X
X
X
X
X
X
X
1,4
L
H
H
H
1. All DDR2 SDRAM commands are defined by states of CS, E, RAS, CAS, and CKE at the rising edge of the clock.
2. Bank addresses (Bax) determine which bank is to be operated upon. For (E) MRS Bax selects an (Extended) Mode Register.
3. Burst reads or writes at BL = 4 cannot be terminated. See sections Reads interrupted by a Read and Writes interrupted by a Write inspection
for details.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements
outlined.
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6. X means H or L (but a defined logic level).
7. Self refresh exit is asynchronous.
8. Vref must be maintained during Self Refresh operation.
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Clock Enable (CKE) Truth Table for Synchronous Transitions
Current State 2
CKE
Command (N) 3
RAS, CAS, E, CS
Action (N) 3
Notes
Previous
Cycle 1
(N-1)
Current
Cycle 1
(N)
Power-Down
L
L
X
Maintain Power-Down
11, 13, 15
L
H
DESELECT or NOP
Power-Down Exit
4, 8, 11, 13
Self Refresh
L
L
X
Maintain Self Refresh
11, 15, 16
L
H
DESELECT or NOP
Self Refresh Exit
4, 5, 9, 16
Bank(s) Active
H
L
DESELECT or NOP
Active Power-Down Entry
4,8,10,11,13
All Banks Idle
H
L
DESELECT or NOP
Precharge Power-Down Entry
4,8,10,11,13
H
L
AUTOREFRESH
Self Refresh Entry
6, 9, 11,13
Any State other
than listed above
H
H
Refer to the Command Truth Table
7
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N-1) was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3. Command (N) is the command registered at clock edge N, and Action (N) is a result of Command (N).
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read
commands may be issued only after tXSRD (200 clocks) is satisfied.
6. Self Refresh mode can only be entered from the All Banks Idle state.
7. Must be a legal command as defined in the Command Truth Table.
8. Valid commands for Power-Down Entry and Exit are NOP and DESELECT only.
9. Valid commands for Self Refresh Exit are NOP and DESELCT only.
10. Power-Down and Self Refresh cannot be entered while Read or Write operations, (Extended) mode Register operations, Precharge or
refresh operations are in progress. See section 2.8 Power Down and section 2.7.2 Self Refresh Command for a detailed list of
restrictions.
11. Minimum CKE high time is 3 clocks, minimum CKE low time is 3 clocks.
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
13. The Power-Down Mode does not perform any refresh operations. The duration of Power-Down Mode is therefore limited by the refresh
requirements.
14. CKE must be maintained high while the device is in OCD calibration mode.
15. X means dont care (including floating around VREF) in Self Refresh and Power Down. However DT must be driven high or low in
Power Down if the ODT function is enabled (Bit A2 or A6 set to 1 in MRS(1)).
16. Vref must be maintained during Self Refresh operation
Operating Conditions
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Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to VSS
-1.0 to + 2.3
V
1,3
VDDQ
Voltage on VDDQ pin relative to VSS
-0.5 to + 2.3
V
1,3
VDDL
Voltage on VDDL pin relative to VSS
-0.5 to + 2.3
V
1,3
VIN, VOUT
Voltage on any pin relative to VSS
-0.5 to + 2.3
V
1
TSTG
Storage Temperature
-55 to + 100
1, 2
1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. When VDD, VDDQ, and VDDL are less than 500mV, Vref may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 85 (Standard Grade)
1, 2
-40 to 95 (Industry Grade)
1, 3
Note:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The operation temperature range is the temperature where all DRAM specification will be supported. Outside of this
temperature range, even if it is still within the limit of stress condition, some deviation on portion of operation specification may be
required. During operation, the DRAM case temperature must be maintained between 0-85 under all other specification
parameter. However, in some applications, it is desirable to operate the DRAM up to 95 case temperature. Therefore, two spec.
may exist.
Supporting 0-85 with full JEDEC AC & DC spec. This is the minimum requirements for all operating temperature options.
This is an optional feature and not required. Supporting 0-85 and being able to extend to 95 with doubling auto-refresh
command in frequency to a 32ms period (tRFI=3.9μs)
Currently the period Self-Refresh interval is hard coded within the DRAM to a vendor specific value. There is a migration plan to
support higher temperature Self-Refresh entry via the control of EMRS (2) bit A7.
3. The operation temperature range are the temperature where all DRAM specification will be supported. Outside of this
temperature range, even if it is still within the limit of stress condition, some deviation on portion of operation specification may be
required. During operation, the DRAM case temperature must be maintained between -40-85 under all other specification
parameter. However, in some applications, it is desirable to operate the DRAM up to 95 case temperature. Therefore, two spec.
may exist. Support -40-85 and being able to extend to 95oC. Without doubling auto-refresh command in frequency to a 32ms
period (tRFI=3.9μs)
AC & DC Operating Conditions
DC Operating Conditions
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Recommended DC Operating Conditions (SSTL_18)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
5
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
1,5
VREF
Input Reference Voltage
0.49 * VDDQ
0.5 * VDDQ
0.51 * VDDQ
V
2, 3
VTT
Termination Voltage
VREF 0.04
VREF
VREF + 0.04
V
4
1. VDDQ tracks with VDD, VDDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to
be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak ac noise on VREF may not exceed ± 2% VREF (dc).
4. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set equal to VREF and
must track variations in die dc level of VREF.
5. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ, and VDDL tied together.
ODT DC Electrical Characteristic
Parameter / Condition
Symbol
min.
nom.
Max.
Units
Notes
Rtt eff. Impedance value for EMRS(1)(A6,A2)=0,1; 75 ohm
Rtt1(eff)
60
75
90
ohms
1
Rtt eff. Impedance value for EMRS(1)(A6,A2)=0,1; 150
ohm
Rtt2(eff)
120
150
180
ohms
1
Rtt eff. Impedance value for EMRS(1)(A6,A2)=1,1; 50 ohm
Rtt3(eff)
40
50
60
ohms
1
Deviation of VM with respect to VDDQ / 2
delta VM
-6.0
+6.0
%
2
1) Measurement Definition for Rtt(eff):
Apply VIHac and VILac to test pin separately, then measure current I(VIHac) and I(VILac) respectively.
Rtt(eff) = (VIHac VILac) /( I(VIHac) I(VILac))
2) Measurement Definition for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
delta VM =(( 2* VM / VDDQ) 1 ) x 100%
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DC & AC Logic Input Levels
DDR2 SDRAM pin timing are specified for either single ended or differential mode depending on the setting of the
EMRS(1) “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by
which the DDR2 SDRAM pin timing are measured is mode dependent. In single ended mode, timing relationships are
measured relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these timing
relationships are measured relative to the cross point of DQS and its complement, DQS. This distinction in timing
methods is guaranteed by design and characterization. In single ended mode, the DQS (and RDQS) signals are
internally disabled and don‟t care.
Single-ended DC & AC Logic Input Levels
Symbol
Parameter
DDR2-533
DDR2-667/800/1066
Units
Min.
Max.
Min.
Max.
VIH (dc)
DC input logic high
VREF + 0.125
VDDQ + 0.3
VREF + 0.125
VDDQ + 0.3
V
VIL (dc)
DC input low
-0.3
VREF 0.125
-0.3
VREF 0.125
V
VIH (ac)
AC input logic high
VREF + 0.250
-
VREF + 0.200
-
V
VIL (ac)
AC input low
-
VREF 0.250
-
VREF 0.200
V
Single-ended AC Input Test Conditions
Symbol
Condition
Value
Units
Notes
VREF
Input reference voltage
0.5 * VDDQ
V
1, 2
VSWING(max)
Input signal maximum peak to peak swing
1
V
1, 2
SLEW
Input signal minimum slew rate
1
V / ns
3, 4
1. This timing and slew rate definition is valid for all single-ended signals except tis, tih, tds, tdh.
2. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.
3. The input signal minimum slew rate is to be maintained over the range from VIL(dc)max to VIH(ac)min for rising edges and the
range from VIH(dc)min to VIL(ac)max for falling edges as shown in the below figure.
4. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to VIL(ac)
on the negative transitions.
Differential DC and AC Input and Output Logic Levels
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Symbol
Parameter
min.
max.
Units
Notes
VID(ac)
AC differential input voltage
0.5
VDDQ + 0.6
V
1
VIX(ac)
AC differential cross point input voltage
0.5 * VDDQ 0.175
0.5 * VDDQ + 0.175
V
2
VOX(ac)
AC differential cross point output voltage
0.5 * VDDQ 0.125
0.5 * VDDQ + 0.125
V
3
Notes:
1) VID(ac) specifices the allowable DC execution of each input of differential pair such as CK, C, DQS, DQS, LDQS, DQS, UDQS, and
DQS.
2) VIX(ac) specifices the input differential voltage lVTR-VCPl required for switching, where VTR is the true input (such as CK, DQS, LDQS, or
UDQS) level and VCP is the complementary input (such C, DQS, DQS, or DQS ) level. The minimum value is equal to VIH(DC) VIL(DC).
3) The typical value of VOX(AC) is expected to be about 0.5VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ.
VOX(AC) indicates the voltage at which differential signals must cross.
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Output Buffer Levels
Output AC Test Conditions
Symbol
Parameter
SSTL-18 Class II
Units
Notes
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V
1
1. The VDDQ of the device under test is referenced.
Output DC Current Drive
Symbol
Parameter
SSTL-18
Units
Notes
IOH(dc)
Output Minimum Source DC Current, nominal
-13.4
mA
1, 3, 4
IOL(dc)
Output Minimum Sink DC Current, nominal
13.4
mA
2, 3, 4
1. VDDQ = 1.7 V; VOUT = 1.42 V. (VOUT-VDDQ) / IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT / IOL must be less than 21 ohm for values of VOUT between 0V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in note 1 and 2. They are used to test drive current capability to
ensure VIHmin. Plus a noise margin and VILmax. Minus a noise margin are delivered to an SSTL_18 receiver. The actual current values
are derived by shifting the desired driver operating points along 21 ohm load line to define a convenient current for measurement.
OCD Default Setting Table
Symbol
Description
Min.
Nomina
l
Max.
Unit
Notes
-
Pull-up / Pull down mismatch
0
-
4
Ohms
6
-
Output Impedance step size for OCD calibration
0
-
1.5
Ohms
1,2,3
SOUT
Output Slew Rate
1.5
-
5
V / ns
1,4,5,7,
8
1) Absolute Specification: TOPEN; VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V.
2) Impedance measurement condition for output source dc current: VDDQ = 1.7V, VOUT = 1420 mV;
(VOUT-VDDQ)/IOH must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condition
for output sink dc current: VDDQ = 1.7 V; VOUT = -280mV; VOUT / IOL must be less than 23.4 ohms for values of VOUT between 0V and 280
mV.
3) Mismatch is absolute value between pull-up and pull-down; both are measured at same
temperature and voltage.
4) Slew rates measured from VIL(AC) to VIH(AC) with the load specified in Section 8.2.
5) The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC.
This is guaranteed by design and characterization.
6) This represents the step size when the OCD is near 18 ohms at nominal conditions across all process parameters and represents
only the DRAM uncertainty. A 0 Ohm value (no calibration) can only be achieved if the OCD impedance is 18 ± 0.75 ohms under
nominal conditions.
7) DRAM output slew rate specification applies to 533MT/s, 667MT/s, and 800MT/s speed pin.
8) Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS
specification.
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Default Output V-I Characteristics
DDR2 SDRAM output driver characteristics are defined for full strength default operation as selected by the EMRS (1)
bits A7~A9 = ‟111‟. The driver characteristics evaluation conditions area) Nominal Default 25 (Tcase), VDDQ=1.8V,
typical process. B) Minimum TOPER(max), VDDQ=1.7V, slow-slow process. C) Maximum 0 (Tcase), VDDQ=1.9V,
fast-fast process
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Full Strength Default Pullup Driver Characteristics
Voltage (V)
Minimum
(23.4 Ohms)
Nomal Default low
(18 Ohms)
Nomal Default high
(18 Ohms)
Maximum
(12.6 Ohms)
0.0
0.00
0.00
0.00
0.00
0.1
-4.30
-5.65
-5.90
-7.95
0.2
-8.60
-11.30
-11.80
-15.90
0.3
-12.90
-16.50
-16.80
-23.85
0.4
-16.90
-21.20
-22.10
-31.80
0.5
-20.05
-25.00
-27.60
-39.75
0.6
-22.10
-28.30
-32.40
-47.70
0.7
-23.27
-30.90
-36.90
-55.55
0.8
-24.10
-33.00
-40.90
-62.95
0.9
-24.73
-34.50
-44.60
-69.55
1.0
-25.23
-35.50
-47.70
-75.35
1.1
-25.65
-36.10
-50.40
-80.35
1.2
-26.02
-36.60
-52.60
-84.55
1.3
-26.35
-36.90
-54.20
-87.95
1.4
-26.65
-37.10
-55.90
-90.70
1.5
-26.93
-37.40
-57.10
-93.00
1.6
-27.20
-37.60
-58.40
-95.05
1.7
-27.46
-37.70
-59.60
-97.05
1.8
-
-37.90
-60.90
-99.05
1.9
-
-
-
-101.05
The driver characteristics ddress on conditions are:
Nominal Default 25 (Tcase) , VDDQ = 1.8 V, typical process
Minimum Toper(max.), VDDQ = 1.7V, slow-slow process
Maximum 0 (Tcase). VDDQ = 1.9 V, fast-fast process
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Full Strength Default Pulldown Driver Characteristics
Voltage (V)
Minimum
(23.4 Ohms)
Nomal Default low
(18 Ohms)
Nomal Default high
(18 Ohms)
Maximum
(12.6 Ohms)
0.0
0.00
0.00
0.00
0.00
0.1
4.30
5.65
5.90
7.95
0.2
8.60
11.30
11.80
15.90
0.3
12.90
16.50
16.80
23.85
0.4
16.90
21.20
22.10
31.80
0.5
20.05
25.00
27.60
39.75
0.6
22.10
28.30
32.40
47.70
0.7
23.27
30.90
36.90
55.55
0.8
24.10
33.00
40.90
62.95
0.9
24.73
34.50
44.60
69.55
1.0
25.23
35.50
47.70
75.35
1.1
25.65
36.10
50.40
80.35
1.2
26.02
36.60
52.60
84.55
1.3
26.35
36.90
54.20
87.95
1.4
26.65
37.10
55.90
90.70
1.5
26.93
37.40
57.10
93.00
1.6
27.20
37.60
58.40
95.05
1.7
27.46
37.70
59.60
97.05
1.8
-
37.90
60.90
99.05
1.9
-
-
-
101.05
The driver characteristics ddress on conditions are:
Nominal Default 25 (Tcase) , VDDQ = 1.8 V, typical process
Minimum Toper(max.), VDDQ = 1.7V, slow-slow process
Maximum 0 (Tcase). VDDQ = 1.9 V, fast-fast process
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Calibrated Output Driver V-I Characteristics
DDR2 SDRAM output driver characteristics are defined for full strength calibrated operation as selected by the procedure
outlined in the Off-Chip Driver (OCD) Impedance Adjustment. The following tables show the data in tabular format
suitable for input into simulation tools. The nominal points represent a device at exactly 18 ohms. The nominal low and
nominal high values represent the range that can be achieved with a maximum 1.5 ohms step size with no calibration
error at the exact nominal conditions only (i.e. perfect calibration procedure, 1.5 ohm maximum step size guaranteed by
specification). Real system calibration error needs to be added to these values. It must be understood that these V-I
curves are represented here or in supplier IBIS models need to be adjusted to a wider range as a result of any system
calibration error. Since this a system specific phenomena, it cannot be quantified here. The values in the calibrated tables
represent just the DRAM portion of uncertainty while looking at one DQ only. If the calibration procedure is used, it is
possible to cause the device to operate outside the bounds of the default device characteristics tables and figure. In such
a situation, the timing parameters in the specification cannot be guaranteed. It is solely up to the system application to
ensure that the device is calibrated between the minimum and maximum default values at all times. If this can‟t be
guaranteed by the system calibration procedure, re-calibration policy and uncertainty with DQ to DQ variation, it is
recommend that only the default values to be used. The nominal maximum and minimum values represent the change in
impedance from nominal low and high as a result of voltage and temperature change from the nominal condition to the
maximum and minimum conditions. If calibrated at an extreme condition, the amount of variation could be as much as
from the nominal minimum to the nominal maximum or vice versa.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
67
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Full Strength Calibrated Pulldown Driver Characteristics
Voltage (V)
Nominal Minimum
(21 Ohms)
Nomal Low
(18.75 Ohms)
Nominal
(18 ohms)
Nomal High
(17.25 Ohms)
Nominal Maximum
(15 Ohms)
0.2
9.5
10.7
11.5
11.8
13.3
0.3
14.3
16.0
16.6
17.4
20.0
0.4
18.7
21.0
21.6
23.0
27.0
The driver characteristics ddress on conditions are:
Nominal 25 (Tcase) , VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25 (Tcase), VDDQ = 1.8V, any process
Nominal Minimum Toper(max), VDDQ = 1.7 V, any process
Nominal Maximum 0(Tcase), VDDQ = 1.9 V, any process
Full Strength Calibrated Pullup Driver Characteristics
Voltage (V)
Nominal Minimum
(21 Ohms)
Nomal Low
(18.75 Ohms)
Nominal
(18 ohms)
Nomal High
(17.25 Ohms)
Nominal Maximum
(15 Ohms)
0.2
-9.5
-10.7
-11.4
-11.8
-13.3
0.3
-14.3
-16.0
-16.6
-17.4
-20.0
0.4
-18.7
-21.0
-21.6
-23.0
-27.0
The driver characteristics ddress on conditions are:
Nominal 25 (Tcase) , VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25(Tcase), VDDQ = 1.8V, any process
Nominal Minimum Toper(max), VDDQ = 1.7 V, any process
Nominal Maximum 0 (Tcase), VDDQ = 1.9 V, any process
Input/Output Capacitance
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
min.
max.
min.
max.
min.
max.
min.
max.
CCK
Input capacitance, CK and C
1.0
2.0
1.0
2.0
1.0
2.0
1.0
2.0
pF
CDCK
Input capacitance delta, CK and C
-
0.25
-
0.25
-
0.25
-
0.25
pF
CI
Input capacitance, all other
input-only pins
1.0
2.0
1.0
2.0
1.0
1.75
1.0
1.75
pF
CDI
Input capacitance delta, all other
input-only pins
-
0.25
-
0.25
-
0.25
-
0.25
pF
CIO
Input/output capacitance,
DQ, DM, DQS, DQS, RDQS, RDQS
2.5
4.0
2.5
3.5
2.5
3.5
2.5
3.5
pF
CDIO
Input/output capacitance delta,
DQ, DM, DQS, DQS, RDQS, RDQS
-
0.5
-
0.5
-
0.5
-
0.5
pF
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
68
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address (A0~A13, BA0, BA1), RAS, CAS, CS, WE, CKE, and
ODT pins. The V-I characteristics for pins with clamps is shown in the following table
Voltage across
clamp (V)
Minimum Power
Clamp Current (mA)
Minimum Ground
Clamp Current (mA)
0.0
0.0
0.0
0.1
0.0
0.0
0.2
0.0
0.0
0.3
0.0
0.0
0.4
0.0
0.0
0.5
0.0
0.0
0.6
0.0
0.0
0.7
0.0
0.0
0.8
0.1
0.1
0.9
1.0
1.0
1.0
2.5
2.5
1.1
4.7
4.7
1.2
6.8
6.8
1.3
9.1
9.1
1.4
11.0
11.0
1.5
13.5
13.5
1.6
16.0
16.0
1.7
18.2
18.2
1.8
21.0
21.0
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
69
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
IDD Specifications and Measurement Conditions
IDD Specifications
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter/Condition
I/O
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Notes
Maximum
37B
37BI
3C
3CI
25D
25DI
25C
25CI
25CL
BE
IDD0
Operating Current
x4/x8
x16
73
74
77
82
84
85
88
93
96
96
98
103
96
96
98
103
92
96
115
120
1,2
IDD1
Operating Current
x4/x8
x16
69
88
72
93
78
100
82
103
88
114
93
118
88
114
88
114
85
88
120
140
1,2
IDD2P
Pre-charge Power-Down
Current
All
6
8
6
8
7
8
7
8
7
7
1,2
IDD2N
Pre-charge Standby Current
All
46
46
52
52
59
57
59
57
59
70
1,2
IDD2Q
Pre-charge Quiet Standby
Current
All
39
41
43
46
47
52
47
53
47
60
1,2
IDD3P
Active
Power-Down
Standby Current
MRS(12)=
0
All
21
21
22
21
24
26
24
24
26
50
1,2
MRS(12)=
1
All
9
10
9
10
9
10
9
9
10
10
1,2
IDD3N
Active Standby Current
x4/x8
x16
44
48
49
53
55
58
55
58
55
70
95
1,2
IDD4R
Operating Current Burst
Read
x4/x8
x16
92
112
105
121
108
129
121
147
122
148
131
163
122
148
131
163
122
132
150
200
1,2
IDD4W
Operating Current Burst
Write
x4/x8
x16
76
78
84
84
87
94
95
100
104
133
126
147
104
133
126
147
104
114
125
170
1,2
IDD5
Auto-Refresh Current
(tRFC=tREFI)
All
115
118
135
139
156
160
155
160
155
180
1,2
IDD6
Self-Refresh Current for
standard products
All
7
8
7
8
7
8
7
8
3
7
1,2
IDD7
Operating Current
x4/x8
x16
128
170
137
189
133
187
137
199
153
220
163
242
156
219
163
242
156
166
190
280
1,2
Note:
1. IDD specifications are tested after the device is properly initialized. IDD parameters are specified with ODT disabled.
2. Input slew rate = 1 V/ns.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
70
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
IDD Measurement Conditions
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter/Condition
IDD0
Operating Current One bank Active Precharge
tCK =tCKmin.; tRC = tRCmin; tRAS = tRASmin; CKE is HIGH, CS is HIGH between valid commands.
Address and control inputs are SWITCHING; Data bus inputs are SWITCHING;
IDD1
Operating Current One bank Active Read Precharge
IOUT = 0 mA; BL = 4, tCK = tCKmin, tRC = tRCmin; tRAS = tRASmin; tRCD = tRCDmin, CL = Clmin.;AL = 0;
CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING, Data bus inputs are
SWITCHING;
IDD2P
Precharge Power-Down Current: All banks idle; CKE is LOW; tCK = tCKmin.; Other control and address inputs are
STABLE, DataBus inputs are FLOATING.
IDD2N
Precharge Standby Current: All banks idle; CS is HIGH; CKE is HIGH; tCK = tCKmin.; Other control and address bus
inputs are SWICHTING; Data bus inputs are SWITCHING.
IDD2Q
Precharge Quiet Standby Current: All banks idle; CS is HIGH; CKE is HIGH; tCK = tCKmin.; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING.
IDD3P (0)
Active Power-Down Current: All banks open; tCK = tCKmin.;CKE is LOW; Other control and address inputs are
STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to “0”(Fast Power-down Exit);
IDD3P (1)
Active Power-Down Current: All banks open; tCK = tCKmin.;CKE is LOW; Other control and address inputs are
STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to “1”(Slow Power-down Exit);
IDD3N
Active Standby Current: All banks open; tCK = tCKmin.; tRAS = tRASmax.; tRP = tRPmin., CKE is HIGH; CS is HIGH
between valid commands; Other control and address inputs are SWITCHING; Data Bus inputs are SWITCHING.
IDD4R
Operating Current Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = Clmin.; tCK = tCKmin.;
tRAS = tRASmax., tRP = tRPmin., CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING;
Data bus inputs are SWITCHING; IOUT = 0mA.
IDD4W
Operating Current Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = Clmin.; tCK = tCKmin.;
tRAS = tRASmax., tRP = tRPmin.;CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING;
Data Bus inputs are SWITCHING.
IDD5
Burst Auto-Refresh Current: tCK = tCKmin.; Refresh command every tRFC = tRFCmin interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address inputs are SWITCHING; Data bus inputs are SWITCHING.
IDD6
Self-Refresh Current: CKE <= 0.2V; external clock off, CK and C at 0V; Other control and address inputs are
FLOATING; Data Bus inputs are FLOATING.
IDD7
Operating Bank Interleave Read Current:
1. All bank interleaving reads; IOUT = 0 mA, BL =4, CL = Clmin., AL = tRCDmin. 1*tCK; tCK = tCKmin., tRC = TRCmin.;tRRD = tRRDmin;
tRCD = 1*tCK, CKE = HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTS.
2. Timing pattern: see item 5 timing show below.
3. Legend: A = Activate, RA = Read with Auto-Precharge, D=DESELECT
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
71
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
1. IDD specifications are tested after the device is properly initialized.
2. IDD parameter are specified with ODT disabled.
3. Data Bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS and UDQS.
4. Definitions for IDD:
LOW is defined as VIN <= VILAC (max.); HIGH is defined as VIN >= VIHAC (min.);
STABLE is defined as inputs are stable at a HIGH or LOW level
FLOATING is defined as inputs are VREF = VDDQ / 2
SWITCHING is defined as:
Inputs are changing between HIGH and LOW every other clock (once per two clocks) for ddress and control signals, and
inputs changing between HIGH and LOW every other clock (once per two clocks) for DQ signals not including mask or strobes
5. Timing parameter minimum and maximum values for IDD current measurements are defined in the following table.
- DDR2 -533 4-4-4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
- DDR2 -667 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
- DDR2 -800 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
- DDR2 -800 5-5-5: A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
- DDR2 -1066 6-6-6: A0 RA0 D D D D A1 RA1 D D D DA 2 RA2 D D DD A3RA3 D D D D D D D D D D
- DDR2 -1066 7-7-7: A0 RA0 D D D D A1 RA1 D D D DA 2 RA2 D D DD A3RA3 D D D D D D D D D D D
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
72
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
IDD Measurement Conditions (cont’d)
For testing the IDD parameters, the following timing parameters are used:
Parameter
Symble
DDR2-533
-37B/-37BI
DDR2-667
-3C/-3CI
DDR2-800
-25D/-25DI
DDR2-800
-25C/-25CI/-25CL
DDR2-1066
-BE
DDR2-1066
-BD
Units
CL
4
5
6
5
7
6
tCK(avg)
Clock Cycle Time
tCK
3.75
3
2.5
2.5
1.875
1.875
ns
Active to Read or Write
delay
tRCD
15
15
15
12.5
13.125
11.25
ns
Active to Active /
Auto-Refresh command
period
tRC
60
60
60
57.5
58.125
56.25
ns
Active bank A to
Active bank B
command delay
x8
tRRD
7.5
7.5
7.5
7.5
7.5
7.5
ns
x16
tRRD
10
10
10
10
10
10
ns
Active to Precharge
Command
tRASmin
45
45
45
45
45
45
ns
tRASmax
70000
7000
7000
7000
7000
7000
ns
Precharge Command
Period
tRP
15
15
15
12.5
13.125
16.25
ns
Refresh parameters
Parameter
Symbol
512Mb
Unit
Auto-Refresh to Active / Auto-Refresh command period
tRFC
105
ns
Average periodic Refresh interval
Standard Grade
0℃≦Tcase85
tREFI
7.8
μs
85℃≦Tcase95
3.9
μs
Industry Grade
-40℃≦Tcase95
7.8
μs
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
73
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Electrical Characteristics & AC Timing Absolute Specification
Timing Parameter by Speed Grade together
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V)
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Min.
Min.
Max.
tCK(avg)
Clock cycle time, CL=x, (Average)
3750
8000
3000
2500
1875
7500
ps
tCH(avg)
CK, C high-level width
0.45
0.55
0.48
0.48
0.48
0.52
tCK(avg)
tCL(avg)
CK, C low-level width
0.45
0.55
0.48
0.48
0.48
0.52
tCK(avg)
WL
Write command to DQS associated clock edge
RL-1
nCK
tDQSS
DQS latching rising transitions to associated
clock edges
-0.25
0.25
-0.25
0.25
-0.25
0.25
-0.25
0.25
tCK(avg)
tDSS
DQS falling edge to CK setup time
0.2
-
0.2
-
0.2
-
0.2
-
tCK(avg)
tDSH
DQS falling edge hold time from CK
0.2
-
0.2
-
0.2
-
0.2
-
tCK(avg)
tDQSL,H
DQS input low (high) pulse width (write cycle)
0.35
-
0.35
-
0.35
-
0.35
-
tCK(avg)
tWPRE
Write preamble
0.35
-
0.35
-
0.35
-
0.35
-
tCK(avg)
tWPST
Write postamble
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK(avg)
tIS
Address and control input setup time
250
-
200
-
175
-
125
-
ps
tIH
Address and control input hold time
375
-
275
-
250
-
200
-
ps
tIPW
Address and control input pulse width (each
input)
0.6
-
0.6
-
0.6
-
0.6
-
tCK(avg)
tDS
DQ and DM input setup time
Differential
Strobe
100-
100
-
50
-
0
-
ps
tDH
DQ and DM input hold time
Differential
Strobe
225
175
-
125
-
75
-
ps
tDIPW
DQ and DM input pulse width
(each input)
0.35
-
0.35
-
0.35
-
0.35
-
tCK(avg)
tAC
DQ output access time from CK / C
-500
500
-450
450
-400
400
-350
350
ps
tDQSCK
DQS output access time from CK / C
-450
450
-400
400
-350
350
-325
325
ps
tHZ
Data-out high-impedance time from CK / C
-
tAC
,max
-
tAC,
max
-
tAC,
max
-
tAC,
max
ps
tLZ(DQS)
DQS(DQS) low-impedance time from CK / C
tAC,
min
tAC,
max
tAC,
min
tAC,
max
tAC,
min
tAC
,max
tAC,
min
tAC,
max
ps
tLZ(DQ)
DQ low-impedance time from CK / C
2 x
tAC,
min
tAC,
max
2 x
tAC,
min
tAC,max
2 x
tAC,
min
tAC,
max
2 x tAC,
min
tAC,
max
ps
tDQSQ
DQS-DQ skew
(for DQS & associated DQ signals)
-
300
-
240
-
200
-
175
ps
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
74
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tHP
Clock half period
Min
(tCH,
tCL )
-
Min
(tCH
(abs),
tCL
(abs) )
-
Min
(tCH
(abs),
tCL
(abs) )
-
Min
(tCH
(abs),
tCL
(abs) )
-
ps
tQHS
Data hold skew factor
-
400
-
340
-
300
-
250
ps
tQH
Data output hold time from DQS
tHP
tQHS
-
tHP
tQHS
-
tHP
tQHS
-
tHP
tQHS
-
ps
tRPRE
Read preamble
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK(avg)
tRPST
Read postamble
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK(avg)
tRRD
Active bank A to Active bank B
command period
X4/x8
(1k page size)
7.5
-
7.5
-
7.5
-
7.5
-
ns
X16
(2K page
size)
10
-
10
-
10
-
10
-
ns
tFAW
Four Activate Window
X4/x8
(1k page size)
37.5
-
37.5
-
35
-
35
-
ns
X16
(2K page
size)
50
-
50
-
45
-
45
-
ns
tCCD
CAS A to CAS B command period
2
-
2
-
2
-
2
-
nCK
tWR
Write recovery time
15
-
15
-
15
-
15
-
ns
tDAL
Auto-Precharge write recovery
+ precharge time
WR +
tnRP
-
WR +
tnRP
-
WR +
tnRP
-
WR +
tnRP
-
nCK
tWTR
Internal Write to Read command delay
7.5
-
7.5
-
7.5
-
7.5
-
ns
tRTP
Internal Read to Precharge command delay
7.5
-
7.5
-
7.5
-
7.5
-
ns
tCKE
CKE minimum high and low pulse width
3
(tCK)
-
3
-
3
-
3
-
nCK
tXSNR
Exit Self-Refresh to non-Read command
tRFC
+ 10
-
tRFC +
10
-
tRFC
+ 10
-
tRFC +
10
-
ns
tXSRD
Exit Self-Refresh to Read command
200
(tCK)
-
200
-
200
-
200
-
nCK
tXP
Exit precharge power-down to any valid
command (other than NOP or Deselect)
2
(tCK)
-
2
-
2
-
3
-
nCK
tXARD
Exit power down to any valid command
(other than NOP or Deselect)
2
(tCK)
-
2
-
2
-
3
-
nCK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
75
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Symbol
Parameter
DDR2-533
DDR2-667
DDR2-800
DDR2-1066
Units
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
tXARDS
Exit active power-down mode to Read
command (slow exit, lower power)
6-AL
-
7-AL
-
8-AL
-
10-AL
-
nCK
tAOND
ODT turn-on delay
2
2
2
2
2
2-
2
2
nCK
tAON
ODT turn-on
tAC,min
tAC,max
+ 0.7
tAC,min
tAC,max +
0.7
tAC,min
tAC,max
+ 0.7
tAC,min
tAC,max
+ 0.7
ns
tAONPD
ODT turn-on (Power-Down mode)
tAC,min
+ 2
3 x
tCK(avg)
+
tAC,max
+ 1
tAC,min +
2
3 x
tCK(avg) +
tAC,max +
1
tAC,min
+ 2
3 x
tCK(avg
) +
tAC,max
+ 1
tAC,min +
2
3 x
tCK(avg)
+
tAC,max
+ 1
ns
tAOFD
ODT turn-off delay
2.5
(tCK)
2.5
2.5
2.5
2.5
2.5
2.5
2.5
nCK
tAOF
ODT turn-off
tAC,
min
tAC,
max +
0.6
tAC,
min
tAC,
max +
0.6
tAC,
min
tAC,
max +
0.6
tAC,
min
tAC,
max +
0.6
ns
tAOFPD
ODT turn-off (Power-Down mode)
tAC,min
+ 2
2.5 x
tCK(avg)
+
tAC,max
+ 1
tAC,min
+ 2
2.5 x
tCK(avg)
+
tAC,max
+ 1
tAC,min
+ 2
2.5 x
tCK(av
g) +
tAC,m
ax + 1
tAC,min
+ 2
2.5 x
tCK(avg)
+
tAC,max
+ 1
ns
tANPD
ODT to power down entry latency
3
(tCK)
-
3
-
3
-
4
-
nCK
tAXPD
ODT power down exit latency
8
(tCK)
-
8
-
8
-
11
-
nCK
tMRD
Mode register set command cycle time
2
(tCK)
0
2
0
2
0
2
0
nCK
tMOD
MRS command to ODT update delay
0
12
0
12
0
12
0
12
ns
tOIT
OCD drive mode output delay
0
12
0
12
0
12
0
12
ns
tDELAY
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tIS + tCK
+ tIH
-
tIS +
tCK(avg)
+ tIH
-
tIS +
tCK(avg)
+ tIH
tIS +
tCK(avg)
+ tIH
-
ns
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Reference Loads, Setup & Hold Timing Definition and Slew Rate Derating
Reference Load for Timing Measurements
The figure represents the timing reference load used in defining the relevant timing parameters of the device. It is not
intended to either a precise representation of the typical system environment nor a depiction of the actual load presented
by a production tester. System designers should use IBIS or other simulation tools to correlate the timing reference load
to a system environment. Manufacturers correlate to their production test conditions, generally a coaxial transmission line
terminated at the tester electronics. This reference load is also used for output slew rate characterization.
25 Ohm Vtt = VDDQ / 2
CK, C DUT
Timing Reference Points
VDDQ
DQ
DQS
DQS
RDQS
RDQS
The output timing reference voltage level for single ended signals is the cross point with VTT.
The output timing reference voltage level for differential signals is the cross point of the true (e.g. DQS) and the
complement (e.g. DQS) signal.
Slew rate Measurements
Output Slew rate
With the reference load for timing measurements output slew rate for falling and rising edges is measured between VTT
250 mV and VTT + 250 mV for single ended signals. For differential signals (e.g. DQS / DQS) output slew rate is
measured between DQS - DQS = - 500 mV and DQS - DQS = + 500 mV. Output slew rate is guaranteed by design, but is
not necessarily tested on each device.
Input Slew rate Differential signals
Input slew rate for differential signals (CK / C, DQS / DQS, RDQS / RDQS) for rising edges are measured from CK - C=
-250 mV to CK - C= + 500 mV and from CK CK = +250 mV to CK CK = - 500mV for falling edges.
Input Slew rate Single ended signals
Input slew rate for single ended signals (other than tis, tih, tds and tdh) are measured from dc-level to ac-level: VREF
-125 mV to VREF + 250 mV for rising edges and from VREF + 125 mV to VREF 250 mV for falling edges. For slew rate
definition of the input and data setup and hold parameters see section 8.3 of this datasheet.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Input and Data Setup and Hold Time
Timing Definition for Input Setup (tIS) and Hold Time (tIH)
Address and control input setup time (tIS) is referenced from the input signal crossing at the VIH(ac) level for a rising
signal and VIL(ac) for a falling signal applied to the device under test. Address and control input hold time (tIH) is
referenced from the input signal crossing at the VIL(dc) level for a rising signal and VIH(dc) for a falling signal applied to
the device under test
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF
V
IL(dc)
max
V
IL(ac)
max
V
SS
tIS tIH
tIS tIH
CK
CK
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
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Timing Definition for Data Setup (tDS) and Hold Time (tDH)
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF
V
IL(dc)
max
V
IL(ac)
max
V
SS
tDS tDH
tDS
V
REF
tDH
DQS
DQS
DQS Differential Input
Waveform
Single-ended Input
Waveform
1. Data input setup time with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at
the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the
VIL(ac) level to differential data strobe crosspoint for a falling signal applied to the device under test. Input waveform
timing with single-ended data strobe enabled MR[bit10]=1, is referenced from the input signal crossing at the VIH(ac)
level to the data strobe crossing Vref for a rising signal, and from the input signal crossing at the VIL(ac) level to the
single-ended data strobe crossing Vref for a falling signal applied to the device under test.
2. Data input hold time with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at
the VIL(dc) level to the differential data strobe crosspoint for a rising signal and VIH(dc) to the differential data strobe
crosspoint for a falling signal applied to the device under test. Input waveform timing with single-ended data strobe
enabled MR[bit10]=1, is referenced from the input signal crossing at the VIL(dc) level to the single-ended data strobe
crossing Vref for a rising signal and VIH(dc) to the single-ended data strobe crossing Vref for a falling signal applied to
the device under test
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Slew Rate Definition for Input and Data Setup and Hold Times
Setup (tIS & tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIH(dc)min
and the first crossing of VIH(ac)min. Setup (tIS & tDS) nominal slew rate for a falling signal is defined as the slew rate
between the last crossing of VIL(dc)max and the first crossing of VIL(ac)max, (fig. A) If the actual signal is always earlier
than the nominal slew rate line between shaded „dc to ac region‟, use nominal slew rate for derating value. If the actual
signal is later than the nominal slew rate line anywhere between shaded „dc to ac region‟, the slew rate of a tangent line
to the actual signal from the ac level to dc level is used for derating value.(fig.B)
Hold (tIH & tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(dc)max
and the first crossing of Vref. Hold (tIH & tDH) nominal slew rate for a falling signal is defined as the slew rate between
the last crossing of VIH(dc)min and the first crossing of Vref.(fig. A). If the actual signal is always later than the nominal
slew rate line between shaded dc to Vref region‟, use nominal slew rate for derating value. If the actual signal is earlier
than the nominal slew rate line anywhere between shaded „dc to Vref region‟, the slew rate of a tangent line to the actual
signal from the dc level to Vref level is used for derating value.(fig.B)
V
SS
V
IL(ac)
max
V
IL(dc)
max
V
REF
V
IH(dc)
min
V
DDQ
V
IH(ac)
min
Delta TFS Delta TRH Delta TFH
Delta TRS
tStH
tStH
dc to ac
region
dc to ac
region
dc to Vref
region
dc to Vref
region
V
SS
V
IL(ac)
max
V
IL(dc)
max
V
REF
V
IH(dc)
min
V
DDQ
V
IH(ac)
min
Delta TFS Delta TRH Delta TFH
Delta TRS
tStH
tStH
dc to ac
region
dc to ac
region
dc to Vref
region
dc to Vref
region
Setup Slew Rate = VIL(dc)max - VIL(ac)max
Delta TFS falling signal
Setup Slew Rate = VIH(dc)min - VIL(ac)min
Delta TRS rising signal
Hold Slew Rate = VREF - VIL(dc)max
Delta TRH rising signal
Hold Slew Rate = VIH(dc)min - VREF
Delta TFH falling signal
Setup Slew Rate =
tangent line [VIL(dc)max - VIL(ac)max]
Delta TFS
Setup Slew Rate =
tangent line [VIH(dc)min - VIL(ac)min]
Delta TRS
Hold Slew Rate =
tangent line [REF - VIL(dc)max]
Delta TRH
Hold Slew Rate =
tangent line [VIH(dc)min - VREF]
Delta TFH
falling
signal
falling
signal
rising
signal
rising
signal
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Input Setup (tIS) and Hold (tIH) Time DeratingTable
Command/Address Slew rate (V/ns)
CK, C Differential Slew Rate (DDR2-667/800/1066)
Units
2.0 V/ns
1.5 V/ns
1.0 V/ns
D tIS
D tIH
D tIS
D tIH
D tIS
D tIH
4.00
150
94
180
124
210
154
ps
3.50
143
89
173
119
203
149
ps
3.00
133
83
163
113
193
143
ps
2.50
120
75
150
105
180
135
ps
2.00
100
45
130
75
160
105
ps
1.50
67
21
97
51
127
81
ps
1.00
0
0
30
30
60
60
ps
0.90
-5
-14
25
16
55
46
ps
0.80
-13
-31
17
-1
47
29
ps
0.70
-22
-54
8
-24
38
6
ps
0.60
-34
-83
-4
-53
26
-23
ps
0.50
-60
-125
-30
-95
0
-65
ps
0.40
-100
-188
-70
-158
-40
-128
ps
0.30
-168
-292
-138
-262
-108
-232
ps
0.25
-200
-375
-170
-345
-140
-315
ps
0.20
-325
-500
-295
-470
-265
-440
ps
0.15
-517
-708
-487
-678
-457
-648
ps
0.10
-1000
-1125
-970
-1095
-940
-1065
ps
For all input signals the total tIS (input setup time) and tIH (input hold time) required is calculated by adding the individual datasheet
value to the derating value listed in the previous table.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
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Command/Address Slew rate (V/ns)
CK, C Differential Slew Rate (DDR2-533)
Units
2.0 V/ns
1.5 V/ns
1.0 V/ns
D tIS
D tIH
D tIS
D tIH
D tIS
D tIH
4.00
187
94
127
124
247
154
ps
3.50
179
89
209
119
239
149
ps
3.00
167
83
197
113
227
143
ps
2.50
150
75
180
105
210
135
ps
2.00
125
45
155
75
185
105
ps
1.50
83
21
113
51
143
81
ps
1.00
0
0
30
30
60
60
ps
0.90
-11
-14
19
16
49
46
ps
0.80
-25
-31
5
-1
35
29
ps
0.70
-43
-54
-13
-24
17
6
ps
0.60
-67
-83
-37
-53
-7
-23
ps
0.50
-110
-125
-80
-95
-50
-65
ps
0.40
-175
-188
-145
-158
-115
-128
ps
0.30
-285
-292
-255
-262
-225
-232
ps
0.25
-350
-375
-320
-345
-290
-315
ps
0.20
-525
-500
-495
-470
-465
-440
ps
0.15
-800
-708
-770
-678
-740
-648
ps
0.10
-1450
-1125
-1420
-1095
-1390
-1065
ps
For all input signals the total tIS (input setup time) and tIH (input hold time) required is calculated by adding the individual datasheet
value to the derating value listed in the previous table.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Data Setup (tDS) and Hold Time (tDH) Derating Table
DQ Slewrate (V/ns)
DQS, DQS Differential Slew Rate (DDR2-667/800/1066)
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
2.0
100
45
100
45
100
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
67
21
67
21
67
21
79
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-5
-14
-5
-14
7
-2
19
10
31
22
-
-
-
-
-
-
0.8
-
-
-
-
-13
-31
-1
-19
11
-7
23
5
35
17
-
-
-
-
0.7
-
-
-
-
-
-
-10
-42
2
-30
14
-18
26
-6
38
6
-
-
0.6
-
-
-
-
-
-
-
-
-10
-59
2
-47
14
-35
26
-23
38
-11
0.5
-
-
-
-
-
-
-
-
-
-
-24
-89
-12
-77
0
-65
12
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-52
-140
-40
-128
-28
-116
1. All units in ps.
2. For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the individual datasheet value to the
derating value listed in the previous table
DQ Slewrate (V/ns)
DQS, DQS Differential Slew Rate (DDR2-533)
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
2.0
125
45
125
45
125
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
83
21
83
21
83
21
95
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-11
-14
-11
-14
1
-2
13
10
25
22
-
-
-
-
-
-
0.8
-
-
-
-
-25
-31
-13
-19
-1
-7
11
5
23
17
-
-
-
-
0.7
-
-
-
-
-
-
-31
-42
19
-30
7
-18
5
-6
17
6
-
-
0.6
-
-
-
-
-
-
-
-
-43
-59
-31
-47
-19
-35
-7
-23
5
-11
0.5
-
-
-
-
-
-
-
-
-
-
-74
-89
-62
-77
-50
-65
-38
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-127
-140
-115
-128
-103
-116
1. All units in ps.
2. For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the individual datasheet value to the
derating value listed in the previous table
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Overshoot and Undershoot Specification
AC Overshoot / Undershoot Specification for Address and Control Pins
Parameter
DDR2-533
DDR2-667
DDR2-800/1066
Units
Maximum peak amplitude allowed for overshoot area
0.5
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
0.5
V
Maximum overshoot area above VDD
1.0
0.8
0.66
V.ns
Maximum undershoot area below VSS
1.0
0.8
0.66
V.ns
VDD
VSS
Overshoot Area
Undershoot Area
Maximum Amplitude
Maximum Amplitude
Time (ns)
Volts (V)
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2-533
DDR2-667/800/1066
Units
Maximum peak amplitude allowed for overshoot area
0.5
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
0.5
V
Maximum overshoot area above VDD
0.28
0.23
V.ns
Maximum undershoot area below VSS
0.28
0.23
V.ns
VDDQ
VSSQ
Overshoot Area
Undershoot Area
Maximum Amplitude
Maximum Amplitude
Time (ns)
Volts (V)
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Package Dimensions
(X8; 60 balls; BGA Package)
0.2 max.
0.1 min.
0.1 min.
10.00 +/- 0.10
10.50 +/- 0.10
PIN 1 INDEX
1.2 max.
0.25 min.
0.40 max.
PIN 1 INDEX
0.8
6.40
0.8
8.00
Unit: mm
Note: It presents the basic solder ball grid pitch
Da. 0.40 Min. & 0.50 Max.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Package Dimensions
(X16; 84 balls; BGA Package)
0.2 max.
0.1 min.
0.1 min.
10.00 +/- 0.10
12.50 +/- 0.10
PIN 1 INDEX
1.2 max.
0.25 min.
0.40 max.
PIN 1 INDEX
0.8
6.40
0.8
11.20
Unit: mm
Dia 0.40 Min. & 0.50 Max.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
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Revision Log
Rev
Date
Modification
0.1
07/2007
Preliminary Release
1.0
10/2007
Official Release
1.1
12/2007
Support NT5TU128M4CE-37B, NT5TU64M8CE-37B, NT5TU32M16CG-37B
1.2
12/2007
Ordering Information modified
1.3
05/2008
Added Industrial Grade items
1.4
09/2008
Combine DDR2-1066 datasheet
1.5
10/2008
Add the definition of Solder Ball Diameter
1.6
02/2009
Add non-lead free products of NT5TU32M16CF into the datasheet
1.7
03/2009
1. The document format changed to Word.
2. To modify the A11RDQS definition of EMRS[1]
3. Add a new part number of NT5TU64M8CE-25L
4. Modified IDD6 3 mA for NT5TU64M8CE-25L
1.8
09/2009
Modify DDR2-1066 WR, Max. tCK(avg), tXARDS tANPD, tAXPD.
1.9
11/2009
Added DDR2 SDRAM standard speed bins and tCK/tCK(avg), tRCD, tRP, tRAS and tRC for
corresponding bin on page 1.
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG / NT5TU32M16CF
512Mb DDR2 SDRAM
87
REV 1.9 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved.
Nov / 2009 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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