TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices Qualified Level
2N3867
2N3867S 2N3868
2N3868S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3867
2N3867S
2N3868
2N3868S
Unit
Collector-Emitter Voltage VCEO 40 60 Vdc
Collector-Base Voltage VCBO 40 60 Vdc
Emitter-Base Voltage VEBO 4.0 Vdc
Collector Current -- Continuous IC 3.0 Adc
Total Power Dissipation @ TA = 250C(1)
@ TC = 250C(2) PT 1.0
10 W
W
Operating & Storage Temperature Range
TOP, TSTG
-55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 17.5 0C/W
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc 2N3867, S
2N3868, S V(BR)CBO
40
60
Vdc
Collector-Emitter Breakdown Voltage
IC = 20 mAdc 2N3867, S
2N3868, S V(BR)CEO
40
60
Vdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc V(BR)EBO
4.0 Vdc
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 40 Vdc 2N3867, S
VEB = 2.0 Vdc, VCE = 60 Vdc 2N3868, S ICEX
1.0
1.0
µAdc
Collector-Base Cutoff Current
VCB = 40 Vdc 2N3867, S
VCB = 60 Vdc 2N3868, S ICBO
100 µAdc
Emitter-Base Cutoff Current
VEB = 4 Vdc IEBO 100 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-5*
2N3867, 2N3868
TO-39*
(TO-205AD)
2N3867S, 2N3868S
2N3867, S; 2N3868, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 1.0 Vdc 2N3867, S
2N3868, S
IC = 1.5 Adc, VCE = 2.0 Vdc 2N3867, S
2N3868, S
IC = 2.5 Adc, VCE = 3.0 Vdc 2N3867, S
2N3868, S
IC = 3.0 Adc, VCE = 5.0 Vdc All Types
hFE
50
35
40
30
25
20
20
200
150
Collector-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VCE(sat)
0.5
0.75
1.5
Vdc
Base-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
VBE(sat)
0.9
1.0
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz hfe
3.0
12
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo
120 pF
Input Capacitance
VEB = 3.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo
800 pF
SWITCHING CHARACTERISTICS
Delay Time VCC = -30 Vdc, VEB = 0,
td 35 ηs
Rise Time IC = 1.5 Adc, IB1 = 150 mAdc tr 65 ηs
Storage Time VCC = -30 Vdc, VEB = 0,
ts 500 ηs
Fall Time IC = 1.5Adc, IB1 = IB2 = 150 mAdc tf 100 ηs
Turn-On Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc ton 100 ηs
Turn-Off Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc toff 600 ηs
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 3.33 Vdc, IC = 3.0 Adc
Test 2
VCE = 40 Vdc, IC = 160 mAdc 2N3867, S
VCE = 60 Vdc, IC = 80 mAdc 2N3868, S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
