ADVANCE INFORMATION ZXMS6005N8 qDMN2027US 60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE S MOSFET IntelliFET Product Summary Features and Benefits Continuous Drain Source Voltage: 60V On-State Resistance: 200m Nominal Load Current (VIN = 5V): 2.0A Clamping Energy: 120mJ Description TM The ZXMS6005N8 is a self-protected low side IntelliFET MOSFET with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6005N8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Low Input Current Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Input Protection (ESD) High Continuous Current Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. "Green" Device (Note 3) An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMS6005N8Q) Applications Mechanical Data Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability- the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product's ability to self-protect at low VDS. SO-8 Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 80.2mg (Approximate) D S D S D S D IN S IN D Device Symbol Top View Top View Pin Out Ordering Information (Note 4) Part Number ZXMS6005N8-13 Notes: Marking 6005N8 Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 Units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information = Manufacturer's Marking 6005N8 = Product Type Marking Code YYWW = Date Code Marking YY: Year WW: Week: 01~52; 52 represents 52 and 53 week Top View IntelliFET is a trademark of Diodes Incorporated. ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 1 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8 qDMN2027US S ADVANCE INFORMATION Functional Block Diagram Absolute Maximum Ratings (@TA = +25C, unless otherwise stated.) Characteristic Symbol Value Unit VDS 60 V VDS(SC) 24 V Continuous Input Voltage VIN IIN -0.5 to +6 No Limit IIN 2 V Continuous Input Current @-0.2V VIN 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V IDM Pulsed Drain Current @VIN = 5V Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = +25C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model mA 5 A IDM 6 A IS 2.5 A ISM 10 A EAS 120 mJ VHBM 4,000 V VCDM 1,000 V Recommended Operating Conditions The ZXMS6005N8 is optimized to use with C operating from 3.3V and 5V supplies. Characteristic Symbol Min Max Unit VIN 0 5.5 V Ambient Temperature Range TA -40 +125 C High Level Input Voltage for MOSFET to be On VIH 3 5.5 V Low Level Input Voltage for MOSFET to be Off VIL 0 0.7 V Peripheral Supply Voltage (Voltage to which Load is Referred) VP 0 24 V Input Voltage Range ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 2 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8 qDMN2027US S Thermal Resistance (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Power Dissipation @TA= +25C (Note 5) Linear Derating Factor Power Dissipation @TA= +25C (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Symbol Value Unit PD 1.28 10 1.65 12.4 W mW/C W mW/C PD RJA 98 C/W Thermal Resistance, Junction to Ambient (Note 6) RJA 76 C/W Thermal Resistance, Junction to Case (Note 7) RJC 12 C/W TJ -40 to +150 C TSTG -55 to +150 C Operating Temperature Range Storage Temperature Range Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. PD (Note 6) PD (Note 5) Single Pulse TA = 25C ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 3 of 8 www.diodes.com June 2017 (c) Diodes Incorporated Electrical Characteristics ZXMS6005N8 qDMN2027US S (@TA = +25C, unless otherwise stated.) Characteristic Symbol Min Typ Max Unit VDS(AZ) 60 -- 65 -- 70 V Off-State Drain Current IDSS -- -- 2 Input Threshold Voltage VIN(TH) 0.7 -- 1 1.5 Input Current IIN -- Input Current while Overtemperature Active -- Test Condition ADVANCE INFORMATION Static Characteristics Drain-Source Clamp Voltage Static Drain-Source On-State Resistance A V VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA 60 100 200 -- 120 -- -- 170 250 -- 1.4 150 -- 200 -- 1.6 -- -- 1.9 -- -- 2.0 -- -- 2.2 5 -- 3.3 7 -- tD(ON) -- 5 -- tR -- 14 -- tD(OFF) -- 34 -- tF -- 19 -- TJT +150 +175 -- C -- +10 -- C -- RDS(ON) Continuous Drain Current (Note 5) ID Continuous Drain Current (Note 6) Current Limit (Note 8) 1 ID = 10mA ID(LIM) 300 A A m VIN = 3V VIN = 5V VIN = 5V VIN = 3V, ID = 1.0A VIN = 5V, ID = 1.0A VIN = 3V, TA = +25C A VIN = 5V, TA = +25C VIN = 3V, TA = +25C VIN = 5V, TA = +25C A VIN = 3V VIN = 5V Dynamic Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time s VDD = 12V, ID = 0.5A, VGS = 5V Overtemperature Protection Thermal Overload Trip Temperature (Note 9) Thermal Hysteresis (Note 9) Notes: TJT -- 8. The drain current is restricted only when the device is in saturation (see Typical Output Characteristic graph). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as outside normal operating range, so this part is not designed to withstand overtemperature for extended periods. ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 4 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8 qDMN2027US S IS, Source Current (A) ADVANCE INFORMATION Typical Characteristics ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 5 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8 qDMN2027US S ADVANCE INFORMATION Typical Characteristics (Cont.) ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 6 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ZXMS6005N8 qDMN2027US S Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION SO-8 E 1 b E1 h ) ides All s 9 ( R 0 e c 4 3 A .1 Q 45 7 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm A1 E0 L Gauge Plane Seating Plane D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 X 7 of 8 www.diodes.com June 2017 (c) Diodes Incorporated ADVANCE INFORMATION IMPORTANT NOTICE ZXMS6005N8 qDMN2027US S DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2017, Diodes Incorporated www.diodes.com ZXMS6005N8 Document number: DS38473 Rev. 3 - 2 8 of 8 www.diodes.com June 2017 (c) Diodes Incorporated