1SS302A,LF(T - TOSHIBA - Datasheet.Live

1SS302A

Switching Diodes Silicon Epitaxial Planar

1SS302A

Start of commercial production

2014-12

1. Applications

Applications

• Ultra-High-Speed Switching

2. Features

Features

(1) Fast reverse recovery time : trr = 1.6 ns (typ.)

(2) AEC-Q101 qualified

3. Packaging and Internal Circuit

Packaging and Internal Circuit

USM

1: Anode 1

2: Cathode 2

3: Cathode1 / Anode 2

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Peak reverse voltage

Reverse voltage

Peak forward current

Average rectified current

Power dissipation

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

Symbol

VRM

IFM

IFSM

Tstg

Note

(Note 1)

(Note 2)

(Note 1), (Note 3)

Rating

300

100

150

-55 to 150

Unit



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Unit rating. Total rating = Unit rating × 70%

Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.

Note 3: Measured with a 10 ms pulse.

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS302A

5. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

Symbol

VF(1)

VF(2)

VF(3)

IR(1)

IR(2)

trr

Test Condition

IF = 1 mA

IF = 10 mA

IF = 100 mA

VR = 30 V

VR = 80 V

VR = 0 V, f = 1 MHz

IF = 10 mA

See Fig. 5.1.

Min



Typ.

0.60

0.72

0.90



0.9

1.6

Max



1.20

0.1

0.5

3.0

4.0

Unit

µA

Fig.

Fig. 5.1

5.1

5.1 Reverse recovery time (t

Reverse recovery time (t

Reverse recovery time (trr

rr) Test circuit

) Test circuit

6. Marking

Marking

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS302A

7. Land Pattern Dimensions (for reference only)

Land Pattern Dimensions (for reference only)

Fig.

Fig. 7.1

7.1

7.1 USM (Unit: mm)

USM (Unit: mm)

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS302A

8. Characteristics Curves (Note)

Characteristics Curves (Note)

Fig.

Fig. 8.1

8.1

8.1 I

F - V

- V

- VF

FFig.

Fig.

Fig. 8.2

8.2

8.2 I

R - V

- V

- VR

Fig.

Fig. 8.3

8.3

8.3 C

t - V

- V

- VR

RFig.

Fig.

Fig. 8.4

8.4

8.4 P

D - T

- T

- Ta

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS302A

Package Dimensions

Unit: mm

Weight: 6.0 mg (typ.)

Package Name(s)

TOSHIBA: 2-2E1S

Nickname: USM

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS302A

https://toshiba.semicon-storage.com/

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2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation