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DATA SH EET

Product data sheet

Supersedes data of 2001 Nov 28 2002 Jun 21

DISCRETE SEMICONDUCTORS

BZB984 series

Voltage regulator double diodes

M3D79

2002 Jun 21 2

NXP Semiconductors Product data sheet

Voltage regulator double diodes BZB984 series

FEATURES

•Total power dissipation: max. 425 mW

•Approx. 5% VZ tolerance

•Ultra small flat plastic SMD package

•Working voltage range nom. 2.4 to 15 V (E24 range).

APPLICATIONS

•General regulation functions

•ESD and surge protection.

DESCRIPTION

Low-power vo ltage regulator diodes in a SOT663 ultra

small plastic SMD packa ge.

MARKING

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

BZB984-C2V4 91 BZB984-C3V9 96 BZB984-C6V2 9B BZB984-C10 9G

BZB984-C2V7 92 BZB984-C4V3 97 BZB984-C6V8 9C BZB984-C11 9H

BZB984-C3V0 93 BZB984-C4V7 98 BZB984-C7V5 9D BZB984-C12 9J

BZB984-C3V3 94 BZB984-C5V1 99 BZB984-C8V2 9E BZB984-C13 9K

BZB984-C3V6 95 BZB984-C5V6 9A BZB984-C9V1 9F BZB984-C15 9L

PINNING

PIN DESCRIPTION

1cathode 1

2cathode 2

3common anode

handbook, halfpage

MHC314

Top view

Fig.1 Simplified outline (SOT663) and sym bol.

LIMITING VALUES

In accordance wi th the Absolute Max imum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repe titiv e pe ak reverse

current tp = 100 μs; square wave; Tamb = 25 °C;

prior to surge see Table 1

Ptot total power dissipation Tamb = 25 °C; 2 diodes loaded; note 1 −425 mW

Tamb = 25 °C; 1 diode loaded; note 1 −265 mW

PZSM non-repe titiv e pe ak reverse

dissipation tp = 100 μs; square wave; Tamb = 25 °C;

prior to surge −40 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2002 Jun 21 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB984 series

ELECTRICAL CHARACTERISTIC S

Total BZB984-C series

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.2 0.9 V

IRreverse current

BZB984-C2V4 VR = 1 V 50 μA

BZB984-C2V7 VR = 1 V 20 μA

BZB984-C3V0 VR = 1 V 10 μA

BZB984-C3V3 VR = 1 V 5 μA

BZB984-C3V6 VR = 1 V 5 μA

BZB984-C3V9 VR = 1 V 3 μA

BZB984-C4V3 VR = 1 V 3 μA

BZB984-C4V7 VR = 2 V 3 μA

BZB984-C5V1 VR = 2 V 2 μA

BZB984-C5V6 VR = 2 V 1 μA

BZB984-C6V2 VR = 4 V 3 μA

BZB984-C6V8 VR = 4 V 2 μA

BZB984-C7V5 VR = 5 V 1 μA

BZB984-C8V2 VR = 5 V 700 nA

BZB984-C9V1 VR = 6 V 500 nA

BZB984-C10 VR = 7 V 200 nA

BZB984-C11 VR = 8 V 100 nA

BZB984-C12 VR = 8 V 100 nA

BZB984-C13 VR = 8 V 100 nA

BZB984-C15 VR = 10.5 V 50 nA

2002 Jun 21 4

NXP Semiconductors Product data sheet

Voltage regulator double diodes BZB984 series

Table 1 Per type BZB984-C2V4 to C15

Tj = 25 °C unless otherwise specified.

BZB984-

Cxxx

WORKING VOLTAGE

VZ (V)

at IZ = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 5 mA

(see Figs 3 and 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

Tol. ≈5% at IZ = 1 mA at IZ = 5 mA

MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2V4 2.2 2.6 275 600 70 100 −1.3 450 6.0

2V7 2.5 2.9 300 600 75 100 −1.4 450 6.0

3V0 2.8 3.2 325 600 80 95 −1.6 450 6.0

3V3 3.1 3.5 350 600 85 95 −1.8 450 6.0

3V6 3.4 3.8 375 600 85 90 −1.9 450 6.0

3V9 3.7 4.1 400 600 85 90 −1.9 450 6.0

4V3 4.0 4.6 410 600 80 90 −1.7 450 6.0

4V7 4.4 5.0 425 500 50 80 −1.2 300 6.0

5V1 4.8 5.4 400 480 40 60 −0.5 300 6.0

5V6 5.2 6.0 80 400 15 40 1.0 300 6.0

6V2 5.8 6.6 40 150 610 2.2 200 6.0

6V8 6.4 7.2 30 80 615 3.0 200 6.0

7V5 7.0 7.9 30 80 615 3.6 150 4.0

8V2 7.7 8.7 40 80 615 4.3 150 4.0

9V1 8.5 9.6 40 100 615 5.2 150 3.0

10 9.4 10.6 50 150 820 6.0 90 3.0

11 10.4 11.6 50 150 10 20 6.9 90 2.5

12 11.4 12.7 50 150 10 25 7.9 85 2.5

13 12.4 14.1 50 170 10 30 8.8 80 2.5

15 13.8 15.6 50 200 10 30 10.7 75 2.0

2002 Jun 21 5

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB984 series

THERMAL CHARACTE RISTICS

Notes

1. Solder po ints on cathode tabs.

2. Device mounted on an FR4 printed-circuit board.

Soldering

The only recommended soldering method is reflow soldering .

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point 2 diodes loaded; note 1 125 K/W

1 diode loaded; note 1 230 K/W

Rth j-a thermal resistance from junction to ambient 2 diodes loaded; note 2 294 K/W

1 diode loaded; note 2 472 K/W

GRAPHICAL DATA

handbook, halfpage

0.6 0.7 0.8 1

VF (V)

(mA)

300

100

200

0.9

MLD362

Fig.2 Forward current as a function of forward

voltage; typical values.

Tj = 25 °C.

handbook, halfpage

0.5

−2

−1

MLD363

1IZ (mA)

(mV/K)

−1.5

−1

−0.5

2V4

4V7

4V3

3V9

3V6

3V3

3V0

2V7

Fig.3 Temperature coefficient as a functi on of

working current; typical values.

BZB984-C2V4 to C4V7.

Tj = 25 to 150 °C.

2002 Jun 21 6

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB984 series

handbook, halfpage

−4

MLD364

10−1110

IZ (mA)

(mV/K)

102

9V1

5V6

5V1

8V2

7V5

6V8

6V2

Fig.4 Temperature coefficient as a functi on of

working current; typical values.

BZB984-C5V1 to C15.

Tj = 25 to 150 °C.

2002 Jun 21 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB984 series

PACKAGE OUTLINE

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

01-12-04

02-05-21

IEC JEDEC JEITA

mm 0.33

0.23 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT663

detail X

0 1 2 mm

scale

0.6

0.5

Plastic surface mounted package; 3 leads SOT66

wMB

2002 Jun 21 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB984 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/02/pp9 Date of release: 2002 Jun 21 Document orde r number: 9397 750 09768