$ o SSet Sins 2 as = ing) 35 SOT-23 2803325 CF Si-P =25A1366-F (SMD-Marking) 35 SOT-23 >2SA1366 CF Si-N =25C3650 (SMD-Marking) 39 SOT-89 2803650 CF Si-P =BCX 69-10 (SMD-Marking} 39 SOT-89 BCX 69-10 CF(s) Si-N =BSS 79C (SMD-Marking) 35 $0T-23 >BSS 79C Cr GaAs-FET _=CF 910 (SMD-Marking) 44 SOT-143 CF 910 CF3 GaAs-FET =CF 912 (SMD-Marking) 44 SOT-143 CF 912 cr4 GaAs-FET =CF 922 (SMD-Marking) 44 SOT-143 CF 922 CFS __GaAs-FET_=CF 930 (SMD-Marking) 44 SOT-143 CF 930 CF 100 Aeg GaAs-N-FET-d Dual-Gate, UHF, ...2GHz, 10/6V, 80mA, Gp=21dB(800M) 25g S0T-103 7 a CF 124 Aeg GaAs-N-FET-d =CF 100: integr. Gateschutz-Dioden/Gate Protection 25g S0T-103 - CF 224 Aeg GaAs-N-FET-d Dual-Gate, UHF, ...2GHz, 10/6V, 80mA, Gp=17dB(800M) 250 SOT-103 CF 300 Aeg GaAs-N-FET-d Dual-Gate, UHF, ...2GHz, 10/6V, 80mA, Gp=23dB(800M} 25g SOT-103 - CF400 eg = GaAS-N-FET-c1 Dual-Gate, UHE, ...2GHz, 10/6V, 80mA, Gp=17dB(800M) 250 SOT-103 - CF 739 Sie GaAs-N-FET-d SMD, Dual-Gate, VHF/UHF/SATY, 10/6V, 80mA 4g SOT-143 - - ee Idss=6...60ma, Up<?2,5V, F=1,8/Gp=17dB(1750MHz) CF 750 Sie GaAs-N-FET Dual-Gate, Wideband, 8/5V, 80mA, 0,4...3GHz 44 SOT-143 TT ee _Idss=S0mA, F=1,9/Gp=9dB(1800MHz) CF 910 bag GaAs-N-FET-d =CF 100: SMO 44g SOT-143 - CF 912 eg GaAs-N-FET-d =CF 121: SMD 44g $0T-143 CF 922 Beg GaAs-N-FET- =CF 221: SMD 44g SOT-143 - CF 930 peg GaAs-N-FET-d =CF 300: SMD 44g SOT-143 - CF 930R Aeg GaAs-N-FET-d =CF 300: SMD 44-7 SOT-143 - CF 940 __feg Ga As-N-FET-d_=CF 400: SMD 44g SOT-143 : CF 2386 _Tdy _NFFET Uni, 25V, 0,5W, Idss<9mA, Up<-8V da T0-5 Br 244.245, BFW 10, 2NGB19, 2N4222, ++ CFK 10 Aeg GaAs-N-FET-d Dual-Gate, UNF, ...2GHz, 10/6V, 50mA, Gp=21dB(800M) + 51(G2DSG1) SOT-173 - re CFK 12 Aeg GaAs-N-FET-d =CFK 10: integr. Gateschutz-Dioden/Gate Protection 51(G2DSG1) SOT-173 - CFK 22 Aeg GaAs-N-FET-d =CFK 10: int, Gateschutz/protect., Gp=17dB(800MHz) 51(G2DG18) SOT-173 - cFK 30 Aeg GaAs-N-FET-d Dual-Gate, UHF, ...2GHz, 10/6V, 80mA, Gp=30dB(800M) 1{G208G1) SOT-173 - CFK 40 _Aeg _GaAs-N-FET-d_Dual-Gate, UHF, ...2GH2, 10/6V, 80mA, Gp=17dB(800M)__51(G2DG18) SOT-173 - CFM 13026 Isc N-FET Uni, 40V, idss<50mA, Up<-7V Qa TO-18 BF 348, BFT10,2N4091...4092, CFO Si-N =28D2150-0 (SMD-Marking) 39 SOT-89 g0250tstsS**~*# CFR Si-N =2D2150-R (SMD-Marking) 39 SOT-89 2802150 CFS SiN =202150-S (SMD-Marking) 39 S0T-89 : sn2is0 CFX 13 Pai GaAs-FET Mikro-W., 5/6V, 100MA, F<3dB/Gp=6,5dB(12GHz) 52 (SGSD) SOT-100 - CFX 14 Pai GaAs-FET =CFX 13: F<3dB/Gp=6dB(18GHz) 52(SGSD) SOT-100 : CFX2t Pa GaAs-FET _Mikro-W., 8/6V, 110mA, Up=-4V, Gp>11dB(11GHz). $2 (SGSD)_ SOT100, _ _ _ _ CFX 30 Phi GaAs-FET _ Mikro-W., 15/12V, 130mA, Up=-2,5V, Gp>7dB(11GHz} 62 (11x3,4mm) : ~ GFK 31 Phi GaAs-FET -Mikro-W., 15/12V, 250mA, Up=-4V, Gp>7dB(11GHz} 62 (11x3,4mm) - CFX 32 Phi GaAs-FET Mikro-W., 15/12V, 500mA, Up=-4V, Gp>7dB(8,5GHz) 62f (11x3,4mm) - CFX 33 Ph GaAs-FET __Mikro-W., 15/12V, 600mA, Up=-4V, Gp>5dB(8,5GHz) 62 (14x3,4mm) - ee cFY 10 Sie GaAs-N-FET-d Mikro-W., 5/5V, 100mA, F<1,8dB/Gp>9,5dB(6GHz) 52 (SDSG) S0T-100 cFY 11 Sie GaAs-FET Mikro-W,,5/5V, 100mA, Up=-2,5V, F<2,2/Gp>9dB(6GHz) 52 (SDSG) SOT-100 CFY 12 Sie GaAs-FET Mikro-W.,5/S5V, 100mA, Up=-2,8V, F<2,7/Gp>7,5dB(6G} 52 (SDSG) SOT-100 - CFY 13 Sie GaAs-FET =CFY 11: 51(SDSG) SOT-173 - crY 14 Sie GaAs-FET = =0FY 12: 51 (SDSG) S0T-173 - CFY 15 Sie GaAs-FET =CFY 10 52 (SDSG) SOT-100 : CFY 16 Sie GaAs-FET =CFY 10 52(SDSG) SOT-100 - CFY 17 Sie GaAs-FET =CFY 10: 1(SDSG) SOT-173 - CFY 18 Sie GaAs-FET =CFY 10: F<1,2dB/Gp>10dB(6GH2) 51 (SDSG) SOT-173 - crY19 Sie_ GaAs-N-FET-d_ Mikro-W., 5/5V, 100mA, F<1,8db/Gp>9,5dB(6GHz) 51 (SDSG) _SOT-173 - ee CFY 20 _ Sie_ GaAs-FET __Dual-Gate, F=1,8dB/Gp=16,5dB(4GHz) 2 SOT-100 - TO CFY25(-17,-20,-25) Sie GaAs-N-FET-d Mikro-W,, 7/5V, 80mA, Idss=15.,.60mA, Up=0,3...3V 51 (SDSG) SOT-173 - -17: Fet ,7/Gp>9dB(12GH2), -20: F<2/Gp>8,5B(12GH2) -25: F<2,3/Gp>8,5dB(12GHz) CFY 30 Sie GaAs-N-FET-d SMD, Mikro-W., 7/5V, 80mA, Idss=20...80mA 44(GSDS) SOT-143 - Up=0,5...4V, F<1,6(4GHz), Gp=8,9d8(6GHz) CFY 35(-20,-23) Sie GaAs-N-FET-d Mikro-W,, 6/5V, 60mA, Idss=10...45mA, Up=0,2...2,5V =44(GSDS} - -20; Fe2/Gp>8dB(12GH7}, -23: F<2,3dB(12GHz} CFY 65(-12,-14) Siz GaAs-N-FET-d Min, Mikro-W.(HEMT), 5,5/4V, 70mA, Idss=10...70mA 51 (SDSG) SOT-173 - Up<2,5V, -12: F<1,2/Gp>100B, -14: Fe1,4dB(126H2} CFY 66 Sis GaAS-N-FET__Min,Mikro-W,,3,5/3V, 60mA, F=0,7/@p=10,5dB(12GHz)__51 (SD8G)_SOT178 CFY 75(-13,-15) Siz GaAs-N-FET-d SMD, UHF Inp ...20GHz, 5/4V, 70mA, Idss=10...70mA _ =44 (GSDS) Up=0,2....2,5V, -13: Fe1,3/Gp>9,5dB(12GHz} -15: Fe1,5/Gp>9dB(12GHz) CFY 76-08 Siz GaAs-N-FET SMD, Mikro-W.(HEMT-FET), 3,/3V, 60mA =44 (GSDS) - F=0,7/Gp=10,5dB(12GHz) CFY 77(-08,-10) Si3 GaAs-N-FET-d SMD, Mikro-W.(HEMT), 3,5/3V, 60mA, Idss=10...60mA =44 - Up=0,2...2V, -08: Fe0,8/Gp>10dB(12GHz) ee -10: F<1/Gp>9,5dB(12GHz _ ee cc Si-P =2SA1163-GR (SMD-Marking) 36 807-28 >28A1163 ca Si-P =2SA1587-GR (SMD-Marking) 35 SOT-23 >2SA1587 CG Si-N =28C3651 (SMD-Marking) 39 SOT-89 2803651 cG Si-P =BCX 69-16 (SMD-Marking) 39 SOT-89 BOX 69-16 CG Si-P =BCX 71RG (SMD-Marking) 35 SOT-28 BCX 71RG CG(s) SiN =BSS B1C (SMD-Marking} 35 SOT-23 >BSS 816 cG1 Gie Si-Di TV Damper-Di, 1400V, 1,54, Ufet,1V(1A), <15ps Sta $0D-57 BY 228 31a BY 228, BY 448 cG2 Gie Si-Di =CG 1: 2A, Uft AV(2A) 3ta SOD-57 BY 228 31a BY 228, BY 448 C63 Gie S-Di =CG 1: 3A, Ufe1 2V(3A) 3la $00-64 BY 228 31a BY 228 _ _ CG 61H 7 Ge-Di =AA 133 31a AA 133 Sta >AA 133 Ca64H ___ Ge-Di =1N34 _ _ AA 133 sta _INs4 ee cec Si-P =BC 869-... (SMD-Marking) 39 SOT-89 ~BC 869 cae Si-N =2803426-GR (SMD-Marking) 35 S0T-23 2803426 C6L Si-N =2803426-BL (SMD-Marking) 35 S0T-23 2803426 CaP Si-N =28C5053-P (SMD-Marking) 39 SOT-89 2805053 cea Si-N =2SC50653-0 (SMD-Marking) 39 SOT-89 >28C5053 CGR Si-N =2805053-R (SMD-Marking) 39 SOT-89 2805053 cay SiN =2803426-Y (SMD-Marking) 35 SOT-23 2803426 _ _ CGY 10...14 Aeg (GaAs)-Di. Gunn Di., UHF $0D-31 - CGY 20...50 Sie _sGaAs-FET UHF, Breitbandverst./Wideband Amplifier : CH SEDI =188351 (SMO-Marking) 35 SOT-23 188351 CH Si-P =2$B1002-CH (SMD-Marking) 39 SOT-89 +2$B1002