SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. HN 1DO2F Unit in mm +0.2 - HNIDO2F is composed of 2 unit of cathode common 28-03 - Low Forward Voltage Vr=0.90V(Typ.) 16137 - Fast Reverse Recovery Time trr=1.6ns(Typ.) 7 CF | Small Total Capacitance CT=0. 9pF (Typ. ) al al 2]! | 6 By os} of 72 t . oD & a in | T+ 33 oi] Al a 2 5 Qa f > MAXIMUM RATINGS (Ta=25C) CH | Wd CHARACTERISTIC SYMBOL RATING UNIT 4 = IS Maximum(Peak) Reverse Voltage VRM 85 Vv 3s | 0 I , Reverse Voltage VR 80 v = | S| Maximum(Peak) Forward Current IFM 300* mA 1. ANODE a Average Forward Current Io 100* nA 2. ANODE g 3. CATHODE = 6 Surge Current (10ms) Irfsn ax A 4. ANODE ald CP 20 75 Power Dissipaticn P 300 mi 5. ANODE 6. CATHODE 3cj7Hed Junction Temperature Tj 125 C JEDEC _ Storage Temperature Tstg -55~125 C Flal * : This is Maximum Ratings of single diode (Q1 or Q2 or TOSHIBA 1-3K1B Q3 or Q4). In the case of using Unit 1 and Unit 2 14 14 independently or simultaneously,the Maximum Ratings Weight 0.0148 per diode is 75% of the single diode one. ELECTRICAL CHARALTERISTICS (Q1, Q2, Q3, Q4 COMMON, Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.] MAX. |] UNIT VF(1) | Ur=lmA - 0.60 - Forward Voltage VF(2)] Ip=10mA - 0.72 ~- Vv VF(3) | Tr=100mA - [0.90 ]1.20 IR(1 VR=30V - - O.1 Reverse Current eo R uA ER(2) | VR=80V - - 0.5 Total Capacitance cr Vp=0, f=1MHz - 0. 3.0 pF Reverse Recovery Time trr If=10mA (Fig.1) - l. 4.0 ns PIN ASSIGNMENT (Trop VIEW) Marking mae TS SS . i { Unit 2 ' 6 5 4 t ' oft A | fag (Q4y Q3y | | 1 , Li.-=> q i A 3 { 4Q1 Q2; 1 A { T ' | oo a oY pou u ' Unitl ' ' Looe eee Et ed 1265 HN1D02F Fig. 1 REVERSE RECOVERY TIME (tyr) TEST CIRCUIT INPUT WAVEFORM OUTPUT WAVEFORM 0.01aF DUT 0 -- IN OUT Ip=10mA 7) G 0 { x OSCILLOSCOPE S Ss cr 500) I ~6V i=! 3 E ie IN R 0.1 Ip 50ns PULSE GENERATOR ter CRour = 500) Ip Vp IR - V 10 10 R a = > Ta=100" @ 10? z 1 a=100T VY a fa e eo m 1 ~ 10 10 g 5 a & z -2 51 = 10 & = f2 - -3 uh 2 10! 2 10 3 a a3 te oe = = Ze 107 10-4 0.2 04 0.6 0.8 1.0 12 0 20 40 60 80 FORWARD VOLTAGE Vp () REVERSF VOLTAGE Vp () Cy Va 2.0 f= IMHz 16 Ta=25C 1.2 te a & .o) a . 2 2 a 3 m Q 08 oa o <I s (Od g a = ~ Z 5 = =e 0 0.1 0.3 1 3 10 30. 100 3000 REVERSE VOLTAGE Vp (V) 1266