FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. * 21 A, 30 V RDS(ON) = 35 m @ V GS = 10 V RDS(ON) = 50 m @ V GS = 4.5 V * Low gate charge (5nC typical) * Fast switching Applications * High performance trench technology for extremely low RDS(ON) * DC/DC converter * Motor drives . D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current PD V 20 V 21 A (Note 1a) 100 Power Dissipation (Note 1) 28 (Note 1a) 3.2 (Note 1b) TJ , TSTG Units 30 (Note 3) - Continuous - Pulsed Ratings Operating and Storage Junction Temperature Range W 1.3 -55 to +175 C Thermal Characteristics RJ C Thermal Resistance, Junction-to-Case (Note 1) 4.5 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6630A FDD6630A 13'' 16mm 2500 units 2001 Fairchild Semiconductor Corporation FDD6630A Rev D(W) FDD6630A April 2001 Symbol TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Ratings Test Conditions Min Typ Max Units (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, V DD = 15 V 55 mJ 7.6 A Off Characteristics BV DSS BV DSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient V GS = 0 V, ID = 250 A Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward V DS = 24 V, V GS = 20 V, V GS = 0 V V DS = 0 V 1 100 A nA IGSSR Gate-Body Leakage, Reverse V GS = -20 V, V DS = 0 V -100 nA 1.7 -4 3 V mV/C 28 40 44 35 50 58 m On Characteristics 30 ID = 250 A, Referenced to 25C V 23 mV/C (Note 2) V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS(th) V GS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = 5 V, ID = 7.6 A 13 S V DS = 15 V, f = 1.0 MHz V GS = 0 V, 462 pF 113 pF 40 pF = 10 V, ID = 7.6 A = 4.5 V, ID = 6.3 A = 10 V, ID = 7.6 A, TJ = 125C = 10 V, V DS = 5 V 1 20 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf (Note 2) V DD = 15 V, V GS = 10 V, ID = 1 A, RGEN = 6 5 11 ns 8 17 ns Turn-Off Delay Time 17 28 ns Turn-Off Fall Time 13 24 ns 5 7 nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge V DS = 15 V, V GS = 5 V ID = 7.6 A, 2 nC 1.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 2.7 A Voltage 0.8 (Note 2) 2.7 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD RDS ( ON ) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6630A Rev. D(W) FDD6630A Electrical Characteristics FDD6630A Typical Characteristics 3 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V ID, DRAIN CURRENT (A) 6.0V 5.0V 30 4.5V 4.0V 20 3.5V 10 3.0V V GS = 3.0V 2.5 3.5V 2 4.0V 4.5V 1.5 5.0V 6.0V 10V 1 0.5 0 0 1 2 3 4 0 5 5 10 Figure 1. On-Region Characteristics. 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.18 ID = 3.8 A I D = 7.6A V GS = 10V 1.6 R DS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 ID , DRAIN CURRENT (A) V DS , DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.15 0.12 T A = 125o C 0.09 0.06 T A = 25o C 0.03 0.6 -50 -25 0 25 50 75 100 125 150 0 175 2.5 T J, JUNCTION TEMPERATURE ( oC) Figure 3. On-Resistance Variation with Temperature. 3.5 4 4.5 V GS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 IS , REVERSE DRAIN CURRENT (A) T A = -55oC V DS = 5V 25oC 20 ID, DRAIN CURRENT (A) 3 125o C 15 10 5 V GS = 0V 10 TA = 125o C 1 25oC 0.1 -55o C 0.01 0.001 0 1 2 3 4 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6630A Rev. D(W) FDD6630A Typical Characteristics 10 700 V DS = 5V 10V 8 f = 1MHz V GS = 0 V 600 15V CISS CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6A 6 4 500 400 300 200 COSS 2 100 CRSS 0 0 0 2 4 6 8 10 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) 1000 100s 100 ID, DRAIN CURRENT (A) 10 V DS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 10s 1 DC V GS = 10V SINGLE PULSE R JA = 96o C/W 0.1 TA = 25 oC 0.01 SINGLE PULSE RJA = 96C/W T A = 25C 30 20 10 0 0.1 1 10 100 0.1 1 V DS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) + RJA R JA = 96 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6630A Rev. D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2