STY50N105DK5 N-channel 1050 V, 0.110 typ., 46 A MDmeshTM DK5 Power MOSFET in a Max247 package Datasheet - production data Features 3 Order code VDS RDS(on) max. ID PTOT STY50N105DK5 1050 V 0.120 46 A 625 W 2 1 Max247 Figure 1: Internal schematic diagram Fast-recovery body diode Best RDS(on) x area Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Applications Switching applications D(2) Description This very high voltage N-channel Power MOSFET is part of the MDmeshTM DK5 fast recovery diode series. The MDmeshTM DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on) * area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. G(1) S(3) AM01475v1_no Tab_noZen Table 1: Device summary Order code Marking Packages Packaging STY50N105DK5 50N105DK5 Max247 Tube December 2016 DocID024200 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents STY50N105DK5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 Max247 package information ............................................................ 9 Revision history ............................................................................ 11 DocID024200 Rev 2 STY50N105DK5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS ID IDM (1) PTOT Parameter Value Unit Gate-source voltage 30 V Drain current (continuous) at TC = 25 C 46 A Drain current (continuous) at TC = 100 C 30 A Drain current (pulsed) 184 A Total dissipation at TC = 25 C 625 W dv/dt (2) Peak diode recovery voltage slope 50 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns -55 to 150 C Value Unit Tj Operating junction temperature range Tstg Storage temperature range Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area 23 A, di/dt 400 A/s; VDS peak V(BR)DSS, VDD = 525 V DS 840 V Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.2 Rthj-amb Thermal resistance junction-ambient 30 C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAS Single pulse avalanche energy (pulse width limited by TJMAX) 16 A EAS Single pulse avalanche energy (starting TJ = 25C, ID = IAS, VDD = 50 V) 1550 mJ DocID024200 Rev 2 3/12 Electrical characteristics 2 STY50N105DK5 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5: On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 V Min. Typ. Max. 1050 Unit V VDS = 1050 V, VGS = 0 V 1 A VDS = 1050 V, VGS = 0 V, TC = 125 C(1) 50 A Gate-body leakage current VGS = 20 V, VDS = 0 V 10 A VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 23 A 0.110 0.120 Min. Typ. Max. Unit - 6675 - pF - 370 - pF - 10 - pF - 630 - pF - 219 - IDSS Zero gate voltage drain current IGSS 3 Notes: (1)Defined by design, not subject to production test Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent capacitance time related VGS = 0 V, VDS = 0 to 840 V Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain - 3 - Qg Total gate charge - 204 - nC Qgs Gate-source charge - 36 - nC Qgd Gate-drain charge VDD = 840 V, ID = 46 A, VGS = 10 V (see Figure 15: "Test circuit for gate charge behavior") - 133 - nC Notes: (1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. (2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when VDS increases from 0 to 80% VDSS. 4/12 DocID024200 Rev 2 STY50N105DK5 Electrical characteristics Table 7: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit VDD = 525 V, ID = 23 A, RG = 4.7 , VGS = 10 V (see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform") - 40.6 - ns - 64.5 - ns - 262 - ns - 49.5 - ns Min. Typ. Max. Unit Table 8: Source drain diode Symbol Parameter Test conditions ISD Source-drain current - 46 A ISDM Source-drain current (pulsed) - 184 A VSD(1) Forward on voltage ISD = 46 A, VGS = 0 V - 1.5 V trr Reverse recovery time - 273 ns Qrr Reverse recovery charge - 3 C IRRM Reverse recovery current ISD = 46 A, VDD = 60 V, di/dt = 100 A/s (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 23 A ISD = 46 A, VDD = 60 V, di/dt = 100 A/s, Tj = 150 C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 477 ns - 10 C - 42 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulsed: pulse duration = 300 s, duty cycle 1.5% DocID024200 Rev 2 5/12 Electrical characteristics 2.1 STY50N105DK5 Electrical characteristics (curves) Figure 2: Forward bias safe operating area Figure 3: Thermal impedance d d t Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance 6/12 DocID024200 Rev 2 STY50N105DK5 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics Figure 13: Maximum avalanche energy vs starting TJ DocID024200 Rev 2 7/12 Test circuits 3 8/12 STY50N105DK5 Test circuits Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform DocID024200 Rev 2 STY50N105DK5 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK (R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 Max247 package information Figure 20: Max247 package outline DocID024200 Rev 2 9/12 Package information STY50N105DK5 Table 9: Max247 package mechanical data mm Dim. 10/12 Min. Typ. Max. A 4.70 - 5.30 A1 2.20 - 2.60 b 1.00 - 1.40 b1 2.00 - 2.40 b2 3.00 - 3.40 c 0.40 - 0.80 D 19.70 - 20.30 e 5.35 - 5.55 E 15.30 - 15.90 L 14.20 - 15.20 L1 3.70 - 4.30 DocID024200 Rev 2 STY50N105DK5 5 Revision history Revision history Table 10: Document revision history Date Revision 24-Jan-2013 1 First release 2 Datasheet status promoted from preliminary to production data. Updated features, description and internal schematic diagram on cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Minor text changes 19-Dec-2016 Changes DocID024200 Rev 2 11/12 STY50N105DK5 IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2016 STMicroelectronics - All rights reserved 12/12 DocID024200 Rev 2